Spectroscopic investigation of a low current arc in pure fluorine

A pure fluorine 10-A DC arc has been operated in an Al₂O₃ tube of 18 mm diameter at atmospheric pressure. This arc was used to perform radially resolved spectroscopic end-on measurements in the visible and UV-spectral regions. An excitation temperature of 7800 K on the arc axis was determined from the intensity of atomic fluorine lines, and an ion density of 1.7×10 ²¹ m^-3 was determined from the half-width of the contamination line H_β. A Boltzmann plot of the affinity continuum in the UV-spectral region yields two groups of electrons. A group of hot electrons is characterized by a temperature that agrees with the excitation temperature, and a group of cold electrons has a temperature in accordance to the gas temperature of 4000 K. The absolute intensity of the affinity continuum gives and electron density of 1.3×10²⁰ m^-3 on the arc axis, which is lower than the density of both positive and negative ions in the discharge. From the difference between the electron and gas temperature, an elastic collision cross section between the electrons and F-atoms of 2×10^-20 m² is determined     

利用光泵磁共振曲线测量氢原子密度

本文给出利用光泵磁共振曲线测量氢原子密度的实验.在我们的实验中,当射频源放电功率一定时,在25~61℃的泡温范围内测量到9.2×10¹¹~1.6×10¹¹(原子/厘米³)的氢原子密度.实验结果表明,当放电功率一定时,氢原子密度随泡温升高而下降.     

Hydrogen action in the surface space charge region of highly doped silicon

The action of atomic hydrogen on clean cleaved (1 1 1) surfaces of highly doped silicon samples, both phosphorus ([n] = 2 × 10¹⁹ cm^-3) and boron ([p] = 4 × 10¹⁹ cm^-3) doped has been compared to the case of lightly doped samples ([n] = 1 × 10¹⁴ cm^-3). Once cleaved under ultra high vacuum, the samples were exposed to increasing doses of atomic hydrogen up to saturation. Before and after each hydrogen exposure, the Si(1 1 1) 2 × 1 surface was studied by low energy electron diffraction (LEED) and photoemission yield spectroscopy (PYS). The compared PYS measurements show that H atoms adsorbed on the Si(1 1 1) surface at room temperature do totally compensate the shallow-acceptor impurities (boron) and only partially the shallow-donor impurities (phosphorus) in the space charge region. They also remove the surface dangling bond states. These effects are reversible upon heating under vacuum. Both surface stresses and space charge electric field play a role in this compensation effect.     

磁阱中超冷玻色气体临界行为的观测

超冷玻色气体为研究量子临界现象提供了一个非常干净的实验系统. 弱相互作用下的三维玻色气体的临界行为与⁴He发生超流相变时的临界行为类似, 都属于三维XY型普适类. 从正常流体到超流的量子相变过程中, 系统会经历一个从无序相到长程有序相的转变; 而在相变点附近, 系统参量会表现出一些奇点的特征. 本文从实验上观测到了静磁阱中超冷⁸⁷Rb玻色气体在凝聚体相变温度T_c附近的临界行为. 原子气体从静磁阱中释放, 经过30 ms的自由飞行后, 通过吸收成像得到原子气体的动量分布; 然后从中扣除热原子气体的动量分布, 提取出空间上处于临界区域内的原子气体动量分布, 并对不同温度下的动量分布半高宽进行统计. 统计结果显示: 在非常接近相变温度T_c时, 动量分布的半高宽突然减小, 表现出十分明显的奇点行为.     

Experimental study of CF4 conical theta pinch plasmaexpanding into vacuum

Langmuir probe, photodiode, and optical multichannel analyzer (OMA) measurements have been made on a pulsed CF₄ conical theta-pinch plasma. A cloud of CF₄ was puffed into a conical theta-pinch coil, converted to plasma, and propelled into the vacuum region ahead of the expanding gas cloud. At a position 67 cm away from the conical theta-pinch coil, the plasma arrived in separate packets that were about 20 μs in duration. The average drift velocity of these packets corresponded to an energy of about 3 eV. The OMA measurements showed that the second packet contained neutral atomic fluorine as well as charged particles. The electron temperature and ion density in the second packet were 2.0 eV and 1.5×10¹³ cm^-3, respectively. The electron temperature and ion density in the wake plasma were 8.3 eV and 4×10¹¹ cm^-3 , respectively. This device can be used for plasma processing or as a laboratory test of numerical and analytical models of the expansion of plasma into vacuum     

锶玻色子的“魔术”波长光晶格装载实验研究

光晶格中性原子光钟的不确定度已达到10^-18量级. 本文介绍了碱土金属锶原子玻色子⁸⁸Sr在“魔术”波长处的一维光晶格装载, 实现冷锶原子的囚禁并使锶原子的钟跃迁能级(5s²) ¹S₀-(5s5p) ³P₀在此波长处的交流斯塔克光频移一致. 实验中半导体激光器产生“魔术”光波长(813 nm), 通过实验搭建光学驻波场并获得晶格激光聚焦光束, 束腰半径为38 μm. 经过一级冷却和二级冷却后温度约为2 μK的冷锶原子被此“魔术”波长光晶格囚禁. 通过实验测量得到锶原子玻色子⁸⁸Sr光晶格寿命为270 ms, 数目约为1.2×10⁵, 温度在3.5 μK左右, 此外研究了晶格光功率对晶格囚禁原子数目及温度的影响作用. 原子的光晶格装载为后续的钟跃迁提供了长的探测时间, 为进一步的光钟闭环提供了实验基础.     

Microscopic, many-body approach to inelastic pion-nucleus scattering

We develop a microscopic, Fermi liquid approach to (π, π′;) scattering to low-lying final states. Application to excitation of a neutron particle-hole state in infinite nuclear matter shows that the ratio of π⁻ to π⁺ cross sections is sensitive to Fermi liquid parameters.     

一种可用于极化~3He实验的新型磁场系统

原子核自旋极化的~3He气体已被深入研究并广泛用于各种科学实验.在过去的极化~3He实验中,为了减小磁场梯度对纵向弛豫时间的影响,通常会建造大尺寸的亥姆霍兹线圈来提供所需均匀度的主磁场环境.本文通过计算得到了新的六正方形线圈系统,可以为极化~3He实验提供小型高均匀性的磁场装置.其中线圈系√统内部超过30%的区域磁场梯度满足(|▽B_x|~2+|▽B_y|~2)/B_0 10~(-4)cm~(-1),这一均匀区域比例超过了现在所有用于极化~3He实验的线圈装置.对于其他需要大均匀区域磁场环境的研究实验,新的六线圈系统也具有很好的应用价值.     

Incorporation of hydrogen in CdTe and HgTe epitaxial layers grown by MOCVD

The incorporation of hydrogen into MOCVD-grown layers of CdTe, HgTe and CdHgTe using H₂ as the vector gas has been studied. Concentrations of incorporated H going from 6.5 × 10¹⁷ cm^-3 to 5 × 10¹⁸ cm^-3 have been found by SIMS in CdTe layers. This concentration decreases with increasing growth temperature and decreasing bond strength of the host material.     

Active species in microwave postdischarge for steel-surfacenitriding

Production of nitrogen atoms has been studied in a 2.45-GHz flowing postdischarge in N₂ and N₂-H₂ gas mixtures with Ar as a buffer gas in the high-pressure regime (5×10³ to 6.5×10⁴ Pa). N atom densities have been measured by NO titration in the 10¹⁴-10 ¹⁵ cm³ range and monitored by the first positive emission resulting from the N atom recombination. The rate coefficient of the N+N+N₂ recombination has been found to be _k=6×10^-33 cm⁶ atom^-2 s ^-1 at T₀=300 K, which agrees with previously published data. The N atom production (or degree of N/N₂ dissociation) in front of an Fe-0.1%C substrate correlates well with the thickness of a γ' Fe₄N layer produced by the postdischarge treatment. The H₂ gas was first introduced in the initial phase of treatment to remove surface oxidizing and then was cut off to keep high densities of N atoms. It is deduced that N atoms are more active nitriding species than NH-type radicals     

弱磁场中弱相互作用费米气体的有限粒子数效应(英文)

由弱磁场中弱相互作用费米气体的配分函数,导出有限粒子数条件下系统的配分函数G(β,N ).在此基础上,运用统计平均方法求解有限粒子数弱相互作用费米气体热力学量的解析表达式,给出各种温度条件下的热力学性质.研究结果表明,有限粒子数效应使各个热力学量都产生了一个修正项,除温度趋于0外,粒子数对化学势的修正项有直接影响,对内能和热容量的修正项并不产生直接影响.并且有限粒子数效应总是降低化学势,从而使化学势的0点向低温漂移,粒子数增大,会削弱这种效应,粒子间的相互排斥会加强这种效应.     

Anomalous behavior of conductivity of the confined Q1D electron system over liquid helium

Conductivity of electrons in a quasi-one-dimensional (Q1D) system over liquid helium in narrow channels with the parabolic profile of the potential well has been investigated at temperature T, from 0.4 to 1.8 K, for different driving electric fields and radius of channel curvature. The interval of linear electron densities varied from 2.18×10³ up to 1.7×10⁶ cm⁻¹.

The inverse mobility (1/μ_eff) in the electron-ripplon scattering region at the high linear densities of charges in the channel increases with temperature decreasing. This anomalous behavior of the electron transport in the low-temperature region has been explained by either the electron ordering or the polaronic effects in confined conducting channels. The nonlinear behavior of the electron velocity as a function of a driving electric field is supposed to be due to Breg–Cherenkov radiation of the ripplons. The radiation occurred if the velocity of electrons in the channel approaches to the critical value.     

A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

Surface properties of Si from photoelectric emission at room temperature and 80 °K

The position of the Fermi level with respect to the energy bands at a semiconductor surface as well as changes in the work function can be determined from the energy distributions of photoelectrically emitted electrons. Prior studies involved the photoelectric yield spectrum and required assumptions concerning the photoelectric threshold; the present method is free of such assumptions. Measurements at room temperature indicate that the Fermi level lies 0.23 eV and 0.41 eV above the top of the valence band for degenerate p and n-type materials, respectively. These results confirm those of Allen and Gobeli¹). Cooling to 80 °K increases the work function of p-type material by 0.025 eV while that of n-type Si remains unchanged; the results show that the electron and hole gases in the surface states are degenerate. The density of surface states lies between 7 × 10¹³ and 10¹⁵ eV⁻¹ cm⁻². On the cesiated surface, the Fermi level lies 0.16 eV below the conduction band at room temperature and coincides with its bottom at 80 °K.     

Radiation effects of electrons and protons on the ceramic oxide superconductor YBaCuO

The irradiation of the high T_c superconducting material YBaCuO has been carried out by using 200 keV proton, and 400 keV and 8 MeV electron beams. The temperature of zero resistance increases from 86.7 to 89.8 K with proton implantation while 8 MeV electron irradiation reduces the zero resistance temperature by 3 K with an irradiation dose of 2.25×10¹⁴e^-/cm². However, wich an irradiation dose of 1.35×10¹⁵e^-/cm² the 8 MeV electron beam can make the superconductor become insulating. The in situ examination of a high resolution transmission electron microscope has proved that the amorphous region in the system has ordered arrangement whereas the crystalline region turns disordered under 400 keV electron irradiation with very high doses up to 10²⁶ e^-/cm². The experiments demostrate that proton and electron irradiations exhibit quite different effects both in its structure and property.     

Chemical effects of Ne bombardment on the MoS2(0001) surface studied by high-resolution photoelectron spectroscopy

The effect of 1 keV Ne⁺ bombardment on the clean MoS₂(0001)-1 × 1 surface with fluences between 4 × 10¹⁴ and 4 × 10¹⁶ Ne⁺/cm² was studied using high-resolution photoelectron spectroscopy excited with synchrotron radiation. Spectra of the Mo 3d and S 2p core levels were measured with photon energies that ensured that the kinetic energy of the photoelectrons was the same, resulting in the same depth being probed for both core levels. For lower fluences (i.e., 2 × 10¹⁵ Ne⁺/cm²), S vacancy defect formation occurs in the MoS₂ lattice, with the concurrent formation of a small amount (< 10%) of dispersed elemental molybdenum [Mo(0)]. For fluences greater than l × 10¹⁶ Ne⁺/cm², the Mo(0) is the predominant species in the surface region, while the remaining species consist of amorphous MoS_2−x and polysulfide species. Valence band spectra taken with photon energies of 152 and 225 eV were consistent with the core level results. The movement of the valence band maximum toward the Fermi level indicated the formation of a metallic surface region. Annealing the sample to temperatures up to 1000 K resulted in the formation of metallic Mo coexisting, in approximately equal amounts, with reformed MoS₂ in a surface with no long-range order as determined by LEED. Finally, a qualitative depth distribution of the chemical species present after Ne⁺ bombardment was determined by varying the photon energies used for the core level spectra. The results indicate that the preferential sputtering of sulfur over molybdenum occurs predominantly through a mechanism involving chemical bonding effects, specifically, through the preferential emission of polysulfide ions over other species in the bombarded region.     

Carrier and mobility profile measurements in n-type ion-implanted GaAs by the differential sheet resistivity and Hall effect technique

Multiple energy ion implantation facilities have been used to prepare essentially box-shaped dopant profiles in GaAs with plateau concentrations between 2 x 10¹⁶ and 8 x 10¹⁷ cm^-3. The implanted species was ²⁸Si⁺. The ion energies ranged between 40 and 400 keV. The depletion depth correction applied to the carrier and mobility profiles in the plateaux did not affect the data values but only their depth scale. Thus, in these regions the measured data (without any feed-back correction) were used to study the electrical properties of the implanted layers. Doping efficiencies between 65% and 81% and carrier mobilities in the range 3000 to 6000 cm² V^-1s^-1 were measured. Activation thresholds in the range 10¹⁵ to 10¹⁶ cm^-3 were estimated.     

Investigation of 3D Dirac semimetal supported terahertz dielectric-loaded plasmonic waveguides

The tunable propagation properties of 3D Dirac semimetal (DSM)-supported dielectric-loaded surface plasmons structures have been investigated in the THz regime, including the influences of the Fermi level of 3D DSM layer, the fiber shape and operation frequencies. The results indicate that the shape of dielectric fiber affects the hybrid mode significantly, on the condition that if a_x (the semi-minor axis length of the dielectric semi-ellipse) is relatively small, the fiber shows good mode confinement and low loss simultaneously, and the figure of merit reaches more than 200. The propagation property can be manipulated in a wide range by changing the Fermi level of 3D DSM, e.g. if the Fermi level varies in the range of 0.05 eV–0.15 eV, the propagation length changes in the range of 9.073×10³–2.715×10⁴ μm, and the corresponding modulation depth is 66.5%. These results are very helpful to understand the tunable mechanisms of the 3D DSM plasmonic devices, such as switchers, modulators, and sensors.     

The atmospheric-pressure plasma jet: a review and comparison toother plasma sources

Atmospheric-pressure plasmas are used in a variety of materials processes. Traditional sources include transferred arcs, plasma torches, corona discharges, and dielectric barrier discharges. In arcs and torches, the electron and neutral temperatures exceed 3000°C and the densities of charge species range from 10¹⁶-10¹⁹ cm^-3. Due to the high gas temperature, these plasmas are used primarily in metallurgy. Corona and dielectric barrier discharges produce nonequilibrium plasmas with gas temperatures between 50-400°C and densities of charged species typical of weakly ionized gases. However, since these discharges are nonuniform, their use in materials processing is limited. Recently, an atmospheric-pressure plasma jet has been developed, which exhibits many characteristics of a conventional, low-pressure glow discharge. In the jet, the gas temperature ranges from 25-200°C, charged-particle densities are 10 ¹¹-10¹² cm^-3, and reactive species are present in high concentrations, i.e., 10-100 ppm. Since this source may be scaled to treat large areas, it could be used in applications which have been restricted to vacuum. In this paper, the physics and chemistry of the plasma jet and other atmospheric-pressure sources are reviewed     

Tm3+,Yb3+共掺钨酸钙多晶材料的上转换发光及荧光温度特性

采用高温固相法制备了Tm³⁺,Yb³共掺CaWO₄多晶材料. 980 nm二极管激光器激发下,在可见区获得了¹G₄→³H₆,¹G₄→³H₄,³H₂,³H₃→³H₆ 跃迁产生的上转换荧光. 讨论了Yb³⁺ 离子浓度的变化对Tm³⁺ 的上转换发光强度的影响,同时根据荧光强度比的方法研究了689 和705 nm 红色上转换荧光在313–773 K 范围内的温度特性. 结果表明：基于Tm³⁺,Yb³⁺ 共掺CaWO₄ 多晶材料的红色上转换荧光可以实现温度监测,其测温的最大灵敏度值为5.7×10^-4 K^-1,相应的测量温度为458 K. 关键词： 上转换发光 3+')" href="#">Tm³⁺ 钨酸钙 荧光温度传感