Defects at the TiO2(1 0 0) surface probed by resonant photoelectron diffraction

We report photoelectron diffraction (PED) experiments of weakly sub-stoichiometric TiO₂(1 0 0) rutile surfaces. Apart from standard core-level PED from the Ti-2p3/2 line, we have studied valence band PED from the defect induced Ti-3d states in the insulating band gap. For maximum yield, the latter were resonantly excited at the Ti-2p absorption edge. The PED patterns have been analyzed within the forward scattering approximation as well as by comparison with simulated PED patterns obtained in multiple scattering calculations. The analysis shows that the defect induced Ti-3d charge is mainly located on the second layer Ti atoms.     

Electronic exchanges between adsorbed Ni atoms and TiO2(1 1 0) surface evidenced by resonant photoemission

Nickel was deposited on stoichiometric TiO₂(1 1 0) surface in the 0.02–2.1 equivalent monolayer (eqML) range and analyzed by means of photoemission and resonant photoemission. In the case of very low coverage (lower than 0.1 eqML), deposited nickel reacts with the surface through an electronic transfer from nickel atoms towards titanium ions. This exchange caused the filling of unoccupied Ti3d states leading to the increase of a peak in the TiO₂ band gap. These states can be better characterized through resonant photoemission experiments at the Ti 3p → 3d absorption edge: for very low coverage, these states in the TiO₂ band gap have resonant behavior of Ti3d electrons rather than Ni3d ones, confirming the filling of Ti3d states and thus electron transfer between nickel and titanium. For coverage higher than 0.14 eqML, nickel peaks (both Ni3p core level and valence band) should be related to the presence of metallic nickel in small clusters.     

A resonant photoemission study of the Ce and Ce-oxide/Pd(1 1 1) interfaces

We have investigated the Ce 4f electronic states in the Ce/Pd(1 1 1) and Ce-oxide/Pd(1 1 1) systems, using resonant photoemission (Ce 4d → 4f transitions), and XPS to understand Pd-Ce interactions in ultra thin layers of cerium and ceria deposited on Pd(1 1 1). Cerium deposited on Pd(1 1 1) at room temperature forms surface Ce-Pd alloys with Ce rich character, while a Pd rich Ce-Pd alloy is formed by heating to 700 °C. A modification of the chemical state of Ce can also be seen after oxygen exposure. RPES provides evidence that Ce-oxide layers deposited on Pd(1 1 1) have a CeO₂ (Ce⁴⁺) character, however a net contribution of the Ce³⁺ states is also revealed. The Ce³⁺ states have surface character and are accompanied by oxygen vacancies. Heating to 600 °C causes Ce-oxide reduction. A significant shift of Pd 4d-derived states, induced by Pd 4d and Ce 4f hybridization, was observed. The resonant features in the valence band corresponding to Ce⁴⁺, Ce³⁺ and Ce⁰ states have been investigated for various Pd−Ce(CeO_x) coverages.     

The interaction of ultrathin Cr layers with SrTiO3(1 0 0)

The growth of ultrathin Cr overlayers on SrTiO₃(1 0 0) was studied by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and transmission electron microscopy. It is found that the metal-oxide interaction strongly depends on the deposition temperature. At T < 600 °C, the interfaces are atomically sharp. Local charge transfer happens between the interfacial Cr adatoms and the topmost substrate atoms. The binding energy shift of Cr 2p is dominated by the final state effects. In case of T > 600 °C, bulk diffusion of oxygen in the oxide substrate may occur, which results in a redox reaction and the formation of new reaction phases at the interfaces. In this temperature regime, the binding energy shift of Cr 2p is mainly controlled by the initial state effects.     

Sn interaction with the CeO2(1 1 1) system: Bimetallic bonding and ceria reduction

A tin layer 0.8 nm thick was deposited onto the CeO₂(1 1 1) surface by molecular beam deposition at a temperature of 520 K. The interaction of tin with cerium oxide (ceria) was investigated by X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS) and resonant photoelectron spectroscopy (RPES). The strong tin-ceria interaction led to the formation of a homogeneous bulk Ce-Sn-O mixed oxide system. The bulk compound formation is accompanied by partial Ce⁴⁺ → Ce³⁺ reduction, observed as a giant 4f resonance enhancement of the Ce³⁺ species. CeO₂ and SnO₂ oxides were formed after oxygen treatment at 520 K. The study proved the existence of strong Ce-Sn interaction and charge transfer from Sn to the Ce-O complex that lead to a weakening of the cerium-oxygen bond, and consequently, to the formation of oxygen deficient active sites on the ceria surface. This behavior can be a key for understanding the higher catalytic activity of the SnO_x/CeO_x mixed oxide catalysts as compared with the individual pure oxides.     

Comparative study of the magnetism of SrTcO3 and Ca(Sr)MnO3

By the first-principles calculations, we studied the electronic structures and the magnetic properties of SrTcO₃ and Ca(Sr)MnO₃. We found the strikingly high Néel temperature of SrTcO₃ is mostly due to the strong Tc(4d)–O(2p) hybridizations, since the Tc-4d states are more extended than the Mn-3d states. Such Tc(4d)–O(2p) hybridizations increase the super-exchange constants, hence increased the Néel temperatures.     

Thermoelectric transport coefficients of n-doped CaTiO3, SrTiO3 and BaTiO3: A theoretical study

Boltzmann transport equations and density functional theory calculations were employed to calculate the thermoelectric transport coefficients of CaTiO₃, SrTiO₃ and BaTiO₃. It was found that BaTiO₃ has the largest Seebeck coefficient and power factor. Then the transport coefficients were analyzed using the ‘Tight Binding Model’. The band narrowing, caused by the increasing lattice constants from CaTiO₃ to BaTiO₃, was the main reason for the increasing Seebeck coefficients and the decreasing electrical conductivity. The calculated electrical conductivity and electronic thermal conductivity were in line with the Wiedemann-Franz law and the Lorenz factor was determined to be 2.45 for these oxides as degenerate semiconductors. Our theoretical results are helpful for seeking high performance thermoelectric oxides.     

Relativistic calculations of 3s2 1S0-3s3p 1P1 and 3s2 1S0-3s3p 3P1,2 transition probabilities in the Mg isoelectronic sequence

Using the multi-configuration Dirac-Fock self-consistent field method and the relativistic configuration-interaction method,calculations of transition energies,oscillator strengths and rates are performed for the 3s 2 1 S 0-3s3p 1 P 1 spinallowed transition,3s 2 1 S 0-3s3p 3 P 1,2 intercombination and magnetic quadrupole transition in the Mg isoelectronic sequence(Mg I,Al II,Si III,P IV and S V).Electron correlations are treated adequately,including intravalence electron correlations.The influence of the Breit interaction on oscillator strengths and transition energies are investigated.Quantum electrodynamics corrections are added as corrections.The calculation results are found to be in good agreement with the experimental data and other theoretical calculations.     

A study on anisotropy of L2 to L3 Coster-Kronig transition (f23) for Th and U elements

The Coster-Kronig transition, f₂₃, was determined using differential fluorescence cross sections of L_l X-ray for Th and U. The targets were irradiated an Am-241 radioisotope at the different incident angle. The L_l X-rays were counted with a Si (Li) detector at the different scattering angle varying from 60° to 90° at 10° intervals. For each angle, the Coster-Kronig transition probability, f₂₃, was found. An obtained Coster-Kronig transition probability value was fitted versus emission angle. According to present results we can say that the Coster-Kronig transition probability, f₂₃, shows isotropic distribution.     

Interplay between orbital and magnetic long range order by resonant X-ray scattering in (V1−xCrx)2O3

Resonant X-ray scattering experiments have been performed in 2.8% Cr-doped V₂O₃ single crystal at the Vanadium K-photoabsorption edge. Using linear polarization analysis and comparing the angular dependence of scattered photons with structure factor calculations we can discriminate the nature of the different resonant X-ray processes involved in forbidden lattice reflections enhanced by resonances. We present an experimental method to extract information on local properties of edge-atom such as the anisotropy of the local atomic environment, the atomic magnetic moment orientation and orbital ordering.     

A theoretical study of CH4 dissociation on Pt(1 0 0) surface

Density functional theory calculations have been performed on the adsorption of H and CH₃, and the dissociation of CH₄ on Pt(1 0 0) surface. It was found that H was adsorbed on the top and bridge sites, while CH₃ was adsorbed only on the top site. The coadsorption of methyl and hydrogen which has also been investigated shows that the interaction between the two adsorbates is stabilising. In addition, two distinct pathways were explored, differing by the initial adsorbed state of CH₄. They converge readily to the same transition state corresponding to an activation energy value of 0.53 eV. These results compare favourably with existing data in the literature for Pt(1 1 1) and Pt(1 1 0).     

A computational study of H2 dissociation and CO adsorption on the PtML/WC(0 0 0 1) surface

We studied computationally the relative stability of Pt_ML/WC(0 0 0 1) [pseudomorphic monolayer of Pt(1 1 1) on WC(0 0 0 1)] interfacial structures using a density functional slab model approach. The work of adhesion was calculated for six different interfacial structures, taking into account both W- and C-terminations of the carbide. The results show that the optimal interfacial structure of Pt_ML/WC(0 0 0 1) is the W-terminated WC(0 0 0 1) with Pt atoms adhesion on the hcp site (W-hcp). The nature of metal/carbide bonding for the W-hcp interfacial geometry was determined on the basis of the partial density of states (PDOS). Adsorption of atomic hydrogen and dissociation of the hydrogen molecule on the W-hcp Pt_ML/WC(0 0 0 1) was investigated and compared to that on Pt(1 1 1). It is found that the most favorable H₂ dissociation channels need similar activation energies of 5.28 and 4.93 kJ/mol on Pt_ML/WC(0 0 0 1) and Pt(1 1 1), respectively, with the release of considerable reaction energies. Furthermore, adsorption of CO on the W-hcp Pt_ML/WC(0 0 0 1) and Pt(1 1 1) was also investigated. The results indicate that Pt_ML/WC(0 0 0 1) is much less susceptible to CO poisoning than Pt(1 1 1), especially at the low coverage of CO.     

Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(1 0 0) surfaces: A comparative study by density functional theory

The surface reactions in atomic layer deposition (ALD) of HfO₂, ZrO₂ and Al₂O₃ on hydroxylated and sulfur-passivated GaAs surfaces are compared by using density functional theory. The HfCl₄ and ZrCl₄ half-reactions show large similarities in energetics and geometrical structure. However, both of them show large discrepancies with the Al(CH₃)₃ (TMA) half-reaction. Calculations find that it is more energetically favorable for the Al₂O₃ deposition than the HfO₂ and ZrO₂ deposition at the initial ALD stage. In addition, calculations find that although the GaAs passivation with sulfur helps to improve the interfacial properties, it is both kinetically and thermodynamically less favorable.     

Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes

The steady-state and time-dependent current–voltage (I–V) characteristics are experimentally investigated in Ge quantum dot (QD)/SiO₂ resonant tunneling diodes (RTDs). Ge QDs embedded in a SiO₂ matrix are naturally formed by thermal oxidation of Si_0.9Ge_0.1 nanowires (30 nm×50 nm) on silicon-on-insulator substrates. The average dot size and spacing between dots are 9±1 and 25 nm, respectively, from TEM observations, which indicate that one or two QDs are embedded between SiO₂ tunneling barriers within the nanowires. Room-temperature resonant oscillation, negative differential conductance, bistability, and fine structures are observed in the steady-state tunneling current of Ge-QD/SiO₂ RTDs under light illumination. Time-dependent tunneling current characteristics display periodic seesaw features as the Ge-QDs RTD is biased within the voltage regime of the first resonance peak while they exhibit harmonic swing behaviors as the RTD is biased at the current valleys or higher-order current peaks. This possibly originates from the interplay of the random telegraph signals from traps at the QD/SiO₂ interface as well as the electron wave interference within a small QD due to substantial quantum mechanics effects.     

A photoemission study of the interaction of Ga with CeO2(1 1 1) thin films

The interaction of gallium with CeO₂(1 1 1) layers was studied using standard and resonant photoelectron spectroscopy, by means of both a laboratory X-ray source and tunable synchrotron light. Firstly a 1.5-nm thick CeO₂ film was grown on a Cu(1 1 1) substrate. Secondly Ga was deposited in six steps up to a thickness of 0.35 nm, at room temperature. The interaction of gallium with the oxide layer induced partial CeO₂ reduction, and gallium oxidation. The photoemission data suggest that a mixed Ga-Ce-O oxide was established similarly to the Sn-Ce-O case for Sn deposited on cerium oxide layers. As a consequence, gallium-induced weakening of Ce-O bonds provides a higher number of active sites on the surface that play a major role in its catalytic behaviour.     

Effect of SiO2/Si3N4 dielectric distributed Bragg reflectors (DDBRs) for Alq3/NPB thin-film resonant cavity organic light emitting diodes

In this article, we report on the effect of SiO₂/Si₃N₄ dielectric distributed Bragg reflectors (DDBRs) for Alq₃/NPB thin-film resonant cavity organic light emitting diode (RCOLED) in increasing the light output intensity and reducing the linewidth of spontaneous emission spectrum. The optimum DDBR number is found as 3 pairs. The device performance will be bad by further increasing or decreasing the number of DDBR. As compared to the conventional Alq₃/NPB thin-film organic light emitting diode (OLED), the Alq₃/NPB thin-film RCOLED with 3-pair DDBRs has the superior electrical and optical characteristics including a forward voltage of 6 V, a current efficiency of 3.4 cd/A, a luminance of 2715 cd/m² under the injection current density of 1000 A/m², and a full width at half maximum (FWHM) of 12 nm for emission spectrum over the 5-9 V bias range. These results represent that the Alq₃/NPB thin-film OLED with DDBRs shows a potential as the light source for plastic optical fiber (POF) communication system.     

First-principles study of the interaction of oxygen with the SnO2(1 1 0) surface

First-principles calculations based on density functional theory in the generalised gradient approximation, together with pseudopotentials and plane-wave basis sets, have been used to investigate the energetics of oxygen adsorption on stoichiometric and weakly and strongly reduced SnO₂(1 1 0) surfaces. It is shown that, if the surface species formed by oxygen adsorption are restricted to be charge neutral, then oxygen cannot be exothermically adsorbed from the gas phase on the stoichiometric surface. A variety of molecular and dissociative modes of adsorption are examined on the reduced surface produced by removing all bridging oxygens and on the weakly reduced surface that results from removal of only a fraction of these oxygens, with the adsorbed species being in both the singlet and the triplet states, and we identify a number of modes not discussed before in the literature. We use the calculated adsorption energies to propose a tentative assignment of these adsorption modes to the peaks observed in temperature programmed desorption experiments on the SnO₂ and TiO₂(1 1 0) surfaces.     

Methanol adsorption on a CeO2(1 1 1)/Cu(1 1 1) thin film model catalyst

Adsorption and desorption of methanol on a CeO₂(1 1 1)/Cu(1 1 1) thin film surface was investigated by XPS and soft X-ray synchrotron radiation PES. Resonance PES was used to determine the occupancy of the Ce 4f states with high sensitivity. Methanol adsorbed at 110 K formed adsorbate multilayers, which were partially desorbed at 140 K. Low temperature desorption was accompanied by formation of chemisorbed methoxy groups. Methanol strongly reduced cerium oxide by forming hydroxyl groups at first, which with increasing temperature was followed by creation of oxygen vacancies in the topmost cerium oxide layer due to water desorption. Dissociative methanol adsorption and creation of oxygen vacancies was observed as a Ce⁴⁺ → Ce³⁺ transition and an increase of the Ce 4f electronic state occupancy.     

Adsorption of CO on the O2 pre-adsorbed LaFeO3 (0 1 0) surface: A density functional theory study

The adsorption of CO molecule on the O₂ pre-adsorbed LaFeO₃ (0 1 0) surface has been investigated using a density functional theory calculation. The calculated results show that the most appropriate reaction occurs between the CO and the pre-adsorbed O₂. After CO adsorption, the bonding mechanism between Fe site and the pre-adsorbed O₂ is not modified, and the HOMO–LUMO energy gap of the M1 mode is narrowed, which is caused by the redistribution of electron density in the surface.