Stable electron field emission from carbon nanotubes emitter transferred on graphene films

Carbon nanotubes (CNTs) arrays grown by microwave plasma enhanced chemical vapor deposition (MPCVD) method was transferred onto the substrate covered with graphene layer obtained by thermal chemical vapor deposition (CVD) technology. The graphene buffer layer provides good electrical and thermal contact to the CNTs. The field emission characteristics of this hybrid structure were investigated in this study. Compared with the CNTs arrays directly grown on the silicon substrate, the hybrid emitter shows better field emission performance, such as high emission current and long-term emission stability. The presence of this graphene layer was shown to improve the field emission behavior of CNTs. This work provides an effective way to realize stable field emission from CNTs emitter and similar hybrid structures.     

Field emission properties of electrophoretic deposition carbon nanotubes film

The field emission properties of electrophoretic deposition(EPD) carbon nanotubes (CNTs) film have been improved by depositing CNTs onto the titanium (Ti)-coated Si substrate, followed by vacuum annealing at 900 °C for 2 h, and the enhanced emission mechanism has been studied using X-ray diffraction (XRD), scanning electron microscope (SEM) and Raman spectroscopy. Field emission measurements showed that the threshold electric field was decreased and the emission current stability was improved compared to that of EPD CNTs film on bare Si substrate. XRD and Raman spectroscopy investigations revealed that vacuum annealing treatment not only decreased the structural defects of CNTs but made a titanium carbide interfacial layer formed between CNTs and substrate. The field emission enhancement could be attributed to the improved graphitization of CNTs and the improved contact properties between CNTs and substrate including electrical conductivity and adhesive strength due to the formed conductive titanium carbide.     

Hot filament CVD of Fe-Cr catalyst for thermal CVD carbon nanotube growth from liquid petroleum gas

A hot filament chemical vapor deposition (HFCVD) method was used to prepare Fe-Cr thin film on Si substrate. The produced layers were used as catalysts for growing carbon nanotubes (CNTs) from liquid petroleum gas (LPG) at 825 °C by thermal CVD (TCVD) method. To characterize the obtained catalysts or CNTs, X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Raman spectroscopy were used. CNTs were grown on HFCVD derived Fe-Cr catalyst with the LPG as carbon source successfully. It was found that an annealing process on catalysts enhances the surface concentration of Cr atoms and reduces the sizes of catalyst particles. The grown CNTs on annealed sample were morphologically denser with smaller diameters compared to the as deposited one. In addition, the effect of filament temperature on CNTs was investigated. By increasing the filament temperature from 850 to 1050 °C the surface density and diameters of CNTs were improved.     

Surface enhanced Raman scattering and photoluminescence properties of catalytic grown ZnO nanostructures

Sword-like (diameter ranging from 40 nm to 300 nm) and needle-like zinc oxide (ZnO) nanostructures (average tip diameter ∼40 nm) were synthesized on annealed silver template over silicon substrate and directly on silicon wafer, respectively via thermal evaporation of metallic zinc followed by a thermal annealing in air. The surface morphology, microstructure, chemical analysis and optical properties of the grown samples were investigated by field emission scanning electron microscopy, X-ray diffraction, energy dispersive X-ray analysis, room temperature photoluminescence and Raman spectroscopy. The sword-like ZnO nanostructures grown on annealed silver template are of high optical quality compared to needle-like ZnO nanorods for UV emission and show enhanced Raman scattering.     

Electric field aligned growth of single-walled carbon nanotubes

Electric field aligned, single-walled carbon nanotubes are grown between electrodes using thermal chemical vapour deposition (CVD) of methane. The growth occurs on a thin film layered catalyst of aluminium, iron and molybdenum patterned on top of electrodes. The nanotubes bridge 10 μm sized electrode gaps and have a typical diameter of less than 2 nm as measured by Raman spectroscopy and atomic force microscopy. We present electrical transport measurements on a directly grown nanotube which shows p-type semiconducting behaviour.     

Monitoring structural defects and crystallinity of carbon nanotubes in thin films

We report the influence of catalyst formulation and reaction temperature on the formation of carbon nanotube (CNT) thin films by the chemical vapour deposition (CVD) method. Thin films of CNTs were grown on Fe-Mo/Al₂O₃-coated silicon wafer by thermal decomposition of methane at different temperatures ranging from 800 to 1000°C. The electron microscopic investigations, SEM as well as HRTEM, of the as-grown CNT thin films revealed the growth of uniform multi-walled CNTs in abundance. The intensity ratio of D-band to G-band and FWHM of G-band through Raman measurements clearly indicated the dependency of structural defects and crystallinity of CNTs in thin films on the catalyst formulation and CVD growth temperature. The results suggest that thin films of multi-walled CNTs with negligible amount of defects in the nanotube structure and very high crystallinity can be obtained by thermal CVD process at 925°C.     

Large scale intercalated growth of short aligned carbon nanotubes among vermiculite layers in a fluidized bed reactor

Short aligned carbon nanotubes (CNTs) were intercalated grown among vermiculite layers from ethylene using a simple fluidized bed chemical vapor deposition (CVD) process. The length of CNTs ranged from 0.5 to 1.5 μm after a synthesizing duration of 1-5 min at 650 °C. The as-grown CNTs vertically aligned to the vermiculite layers were with the mean outer and inner diameter of 6.7 and 3.7 nm, respectively. A CNT yield of 0.22 g/g_cat was obtained for a 5-min growth. Those indicated that the fluidized bed CVD was an effective way for mass production of short CNTs.     

Surface morphology, growth rate and quality of diamond films synthesized in hot filament CVD system under various methane concentrations

Hot filament chemical vapor deposition (CVD) technique has been used to deposit diamond films on silicon substrate. In the present study, diamond films were grown at various vol.% CH₄ in H₂ from 0.5% to 3.5%, at substrate temperature and pressure of 850 °C and 80 torr, respectively. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were employed to analyze the properties of deposited films. The formation of methyl radicals as a function of vol.% CH₄ not only changes film morphology but also increase film growth rate. At low, intermediate and high vol.% CH₄, cluster, faceted cubes and pyramidal features growth, were dominant. By increasing vol.% CH₄ from 0.5% to 3.5%, as the growth rate improved from ∼0.25 μm/h to ∼2.0 μm/h. Raman studies features revealed high purity diamond films at intermediate range of vol.% CH₄ and grain density increased by increasing CH₄ concentration. The present study represents experimentally surface morphology, growth rate and quality of diamond films grown in hot filament CVD system at various CH₄ concentrations.     

Fast solid-phase crystallization of amorphous silicon films on glass using low-temperature multi-step rapid thermal annealing

Effects of multi-step rapid thermal annealing of plasma-deposited amorphous silicon films on Corning 7059 glass are investigated. A three-step rapid thermal annealing for 10 s/step at 730° C after film deposition reduces the activation energy of electrical conductivity for silicon films from 0.64 to 0.51 eV and causes (111) grain growth with a size of 1500 Å, which is determined using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry.     

Carbon nanotube synthesis on oxidized porous silicon

Carbon nanotubes were grown on thermally oxidized porous silicon by catalytic chemical vapor deposition from the mixture of ferrocene and xylene precursor. The growth rate of carbon nanotubes showed dependence on the oxidation extent of porous silicon. On pristine porous silicon surfaces, only poor nanotube growth was observed, whilst samples oxidized in air at 200, 400, 600 and 800 °C prior to the deposition process proved to be suitable substrates for carbon nanotube synthesis. Networks of carbon tubes with diameter of ∼40 and ∼10 nm observed on the surfaces of samples were investigated by electron microscopy and by energy dispersive X-ray analysis.     

Effect of Ni, Pd and Ni-Pd nano-islands on morphology and structure of multi-wall carbon nanotubes

In this research, the effect of Ni, Pd and Ni-Pd catalysts have studied on morphology and structure of synthesized multi-wall carbon nanotubes (MWCNTs). Initially, thin films of Ni (with two thicknesses of 10 and 20 nm), Pd/Ni (5/10 nm) and Pd (10 nm) were deposited as catalysts on SiO₂ (60 nm)/Si(1 0 0) substrates, using dc magnetron sputtering technique. The deposited films were annealed at 900 °C in ammonia environment for 45 min, in order to obtain nano-structured catalyst on the surface. Using scanning electron microscopy (SEM), the average size of Ni nano-islands (synthesized by the 10 and 20 nm Ni films), Pd and Ni-Pd nano-islands were measured about 55, 110, 45 and 50 nm, respectively. According to X-ray photoelectron spectroscopy analysis (XPS), the ratio of Ni/Pd on the surface was about 3 for the bilayer sample. The CNTs were synthesized on the nano-island catalysts at 940 °C in CH₄ ambient using a thermal chemical vapor deposition method. The results revealed that average diameter of the CNTs were about 70, 110, 120 nm for Ni, Ni-Pd and Pd catalysts, respectively. Raman spectra of the MWCNTs showed that intensity ratio of two main peaks located in the range of 1550-1600 and 1250-1450 cm⁻¹ (as a quality factor for the CNTs) for Ni, Pd and Ni-Pd catalysts were 1.42, 0.91 and 0.85, respectively. Therefore, based on our data analysis, although addition of Pd to Ni catalyst caused a considerable reduction in the quality of the grown MWCNTs as compared to the pure Ni catalyst, but it resulted in an enhancement in the methane decomposition rate. For the pure Pd catalyst samples, both a slow methane decomposition rate as compared with Ni-Pd catalyst samples and a poor quality of CNTs were observed as compared with the Ni catalyst, under similar experimental conditions.     

Formation of silicon nanodots from dysprosium-doped amorphous SiCxOy films grown by hot-filament assisted chemical vapor deposition of CH3SiH3 and Dy(DPM)3 gas jets

We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH₃SiH₃ and Dy(DPM)₃ gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC_xO_y) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO₂.     

Structural and optical properties of poly-vinylpyrrolidone modified ZnO nanorods synthesized through simple hydrothermal process

The synthesis of nanocrystalline zinc oxide (ZnO) in the presence of poly-vinylpyrrolidone (PVP) as capping agent through hydrothermal process, and their structural and optical properties were reported. PVP modified ZnO nanorods grown hydrothermally involve a heterogeneous chemical reaction in the presence of water as a solvent medium and reaction temperature of 100 °C for 7 h in a hot air oven and calcined in air at 500 °C for 3 h. Crystal structure, phase purity and average crystallite size of ZnO were studied by powder X-ray diffraction (PXRD). The strain associated with the as-prepared samples due to lattice deformation was estimated by Williamson–Hall (W–H) analysis. Structural morphology was investigated using scanning electron microscopy (SEM), which showed the formation of nanorods with PVP capping. The growth mechanism of ZnO nanorods and its capping by poly-vinylpyrrolidone are briefly discussed through FT-IR adsorption spectra. The optical behavior of the samples was analyzed through photoluminescence (PL) spectroscopy with an emission spectra in visible region ∼418 nm indicate the applicability of using it as a transport material in solar cells.     

A study of the effect of different catalysts for the efficient CVD growth of carbon nanotubes on silicon substrates

We report on the identification of efficient combinations of catalyst, carbon feedstock, and temperature for the ethanol chemical vapour deposition (CVD) growth of single-wall carbon nanotubes (SWCNTs) onto silicon substrates.Different catalyst preparations, based on organometallic salts (Co, Fe, Mo, Ni acetate, and bimetallic mixtures), have been spin coated onto thermally grown silicon dioxide on silicon chips to perform tests in a temperature range between 500 and 900 °C.The samples have been then characterized by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. Assuming the growth of high-quality isolated nanotubes as target, the ratio in Raman spectra between the intensity of the G peak and of the D peak has been used as the main parameter to evaluate the performance of the catalytic process. A comparison made for both single metals and bimetallic mixtures points out best conditions to achieve efficient CVD growth of SWCNTs.     

Short time synthesis of high quality carbon nanotubes with high rates by CVD of methane on continuously emerged iron nanoparticles

We report the variation of yield and quality of carbon nanotubes (CNTs) grown by chemical vapor deposition (CVD) of methane on iron oxide-MgO at 900-1000 °C for 1-60 min. The catalyst was prepared by impregnation of MgO powder with iron nitrate, dried, and calcined at 300 °C. As calcined and unreduced catalyst in quartz reactor was brought to the synthesis temperature in helium flow in a few minutes, and then the flow was switched to methane. The iron oxide was reduced to iron nanoparticles in methane, while the CNTs were growing.TEM micrographs, in accordance with Raman RBM peaks, indicate the formation of mostly single wall carbon nanotubes of about 1.0 nm size. High quality CNTs with I_G/I_D Raman peak ratio of 14.5 are formed in the first minute of CNTs synthesis with the highest rate. Both the rate and quality of CNTs degrades with increasing CNTs synthesis time. Also CNTs quality sharply declines with temperature in the range of 900-1000 °C, while the CNTs yield passes through a maximum at 950 °C. About the same CNTs lengths are formed for the whole range of the synthesis times. A model of continuous emergence of iron nanoparticle seeds for CNTs synthesis may explain the data. The data can also provide information for continuous production of CNTs in a fluidized bed reactor.     

Electrons diffusion study on the nitrogen-doped nanocrystalline diamond film grown by MPECVD method

Nitrogen-doped nanocrystalline diamond (NNCD) films were deposited onto p-type silicon substrates with three different layer structures: (i) directly onto the silicon substrate (NNCD/Si), (ii) silicon with undoped nanocrystalline diamond layer which was deposited in the same way as the above mentioned NNCD by the recipe Ar/CH₄/H₂ with a ratio of 98%/1%/1% (NNCD/NCD/Si), and (iii) silicon wafer with 100 nm thickness SiO₂ layer (NNCD/SiO₂/Si). Atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy were employed to characterize the morphology and microstructure of the as-grown nitrogen-doped diamond films. Silver colloid/silver contacts were made at to measure the current-voltage (I-V) characteristics for the three different structures. Electrons from a CVD reactor hydrogen plasma diffuse toward the p-type silicon substrate during a deposition process under the high temperature (∼800 °C). The study concluded that the SiO₂ layer could effectively prevents the diffusion of electrons.     

Forming mechanism of nitrogen doped graphene prepared by thermal solid-state reaction of graphite oxide and urea

Nitrogen doped graphene was synthesized from graphite oxide and urea by thermal solid-state reaction. The samples were characterized by transmission electron microscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectra, element analysis, and electrical conductivity measurement. The results reveal that there is a gradual thermal transformation of nitrogen bonding configurations from amide form nitrogen to pyrrolic, then to pyridinic, and finally to “graphitic” nitrogen in graphene sheets with increasing annealing temperature from 200 to 700 °C. The products prepared at 600 °C and 700 °C show that the quantity of nitrogen incorporated into graphene lattice is ∼10 at.% with simultaneous reduction of graphite oxide. Oxygen-containing functional groups in graphite oxide are responsible for the doping reaction to produce nitrogen doped graphene.     

A novel continuous process for synthesis of carbon nanotubes using iron floating catalyst and MgO particles for CVD of methane in a fluidized bed reactor

A novel continuous process is used for production of carbon nanotubes (CNTs) by catalytic chemical vapor deposition (CVD) of methane on iron floating catalyst in situ deposited on MgO in a fluidized bed reactor. In the hot zone of the reactor, sublimed ferrocene vapors were contacted with MgO powder fluidized by methane feed to produce Fe/MgO catalyst in situ. An annular tube was used to enhance the ferrocene and MgO contacting efficiency. Multi-wall as well as single-wall CNTs was grown on the Fe/MgO catalyst while falling down the reactor. The CNTs were continuously collected at the bottom of the reactor, only when MgO powder was used. The annular tube enhanced the contacting efficiency and improved both the quality and quantity of CNTs.The SEM and TEM micrographs of the products reveal that the CNTs are mostly entangled bundles with diameters of about 10-20 nm. Raman spectra show that the CNTs have low amount of amorphous/defected carbon with I_G/I_D ratios as high as 10.2 for synthesis at 900 °C. The RBM Raman peaks indicate formation of single-walled carbon nanotubes (SWNTs) of 1.0-1.2 nm diameter.     

Synthesis and optical characterization of vertically grown ZnO nanowires in high crystallinity through vapor-liquid-solid growth mechanism

The gas-phase growth and optical characteristics of 1-dimensional ZnO nanostructure have been investigated. The ZnO nanowires (NWs) were grown vertically on Au coated silicon substrates by vapor-liquid-solid (VLS) growth mechanism using chemical vapor deposition (CVD). The ZnO NWs were grown in the crystal direction of [0 0 0 1]. The ZnO NWs exhibit the uniform size of less than 100 nm in diameter and up to 5 μm in length. Photoluminescence (PL) spectrum of ZnO NWs shows the strong band-edge emission at ∼380 nm (∼3.27 eV) without significant deep-level defect emission. The exciton lifetime of ZnO NWs was measured to be approximately 150 ± 10 ps.     

Preparation of highly conductive CNTs/polyaniline composites through plasma pretreating and in-situ polymerization

In this study, carbon nanotubes (CNTs) were pretreated by plasma, and further in-situ polymerized with aniline to achieve uniform CNTs/polyaniline (PANI) composites with high conductivity. The highest conductivity (2.946 S/cm) of CNTs/PANI composites under optimum plasma treating parameters is much higher than those without CNTs pretreatment or premodified by acid oxidation method. The scanning electronic microscope (SEM) pictures indicate that smooth surfaces of pristine CNTs (diameter: 20-40 nm) changes into rough structures and the size increases to around 90 nm, which is further proved by the X-ray diffraction (XRD), the Fourier transform infrared spectroscopy (FTIR), and the Raman measurements. Thermogravimetric analysis (TGA) results reveal that the thermal stability of CNTs/PANI composite is better than that of pure PANI.