Field emission of carbon nanotube array with normal-gate cold cathode

A hexagon pitch carbon nanotube (CNT) array vertical to the normal gate of cold cathode field emission displayer (FED) is simulated by solving the Laplace equation. The calculated results show that the normal gate causes the electric field around the CNT tops to be concentrated and emission electron beam become a column. The field enhancement factor and the emission current intensity step up greatly compared with those of diode structure. Emission current density increases rapidly with the decrease of normal-gate aperture. The gate voltage exerts a critical influence on the emission current.     

一种平行栅碳纳米管阵列阴极的场发射特性研究

建立一种平行栅碳纳米管阵列阴极,利用悬浮球模型和镜像电荷法进行计算,给出碳纳米管顶端表面电场与电场增强因子的解析式. 在此基础上,进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响. 分析表明,碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳,靠边缘部位的碳纳米管发射电子能力比其中心部位的大;除碳纳米管的长径比之外,栅极宽度和栅极间距也对电场增强因子有一定作用;接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流,而接触电阻高于800 kΩ时,器件对阳极驱动电压的要求更高. 关键词： 平行栅碳纳米管阵列 悬浮球 场增强因子 接触电阻     

Field emission characteristics study for ZnO/Ag and ZnO/CNTs composites produced by DC electrophoresis

A simple controllable method is reported for the coating of ZnO nanowires with Ag nanoparticles and ZnO/carbon nanotubes (CNTs) composite. It has been achieved through DC electrophoresis AgNO₃ electrolyte and CNTs in the presence of isopropanol dispersion of ZnO nanowires. In the present work, the influence of Ag nanoparticles and CNTs on the field emission properties of the composite materials is studied. The results of this research demonstrate a remarkable enhancement of field emission current of ZnO nanowires in case of CNTs mixture and Ag nanoparticles coating.     

Field emission monotron for THz emission

Small-signal negative conductance of a field emission monotron was calculated, which was considerably higher than that of a thermionic monotron due to strong bunching of emitted electrons in a field emission. The amplification constant of 28dB/mm is achieved at THz wave region by applying the monotron to a distributed amplifier and is sufficient to overcome power loss in a transmission line. In addition, a wide band frequency tunable electromagnetic wave source may be developed at THz wave region by providing a low loss microstrip line resonator with field emission array due to the gate voltage dependent phase constant of the line.     

钛基底的纳米金刚石掺混纳米碳管的场发射特性

在纳米金刚石场发射的基础上, 研究了纳米金刚石掺混纳米碳管的场发射特性。采用电泳沉积法形成了纳米金刚石与纳米碳管的复合涂层, 经热处理后制备出阴极样品, 然后进行微观表征, 再进行场发射特性测试与发光测试。结果表明, 与未掺混的纳米金刚石阴极样品相比, 复合涂层阴极样品的场发射开启电场明显减小, 场发射电流提高, 在较低的电场下阳极表面荧光粉就可以发光, 但发光不均匀, 出现了"边沿发光"的现象。分析了纳米金刚石掺混纳米碳管场发射性能提高的机理, 是由于纳米碳管掺入之后, 涂层的电子输运能力得到增强, 涂层中有效发射体的数目增加。最后, 解释了"边沿发光"现象的成因。     

Field emission of cold electrons

A mathematical model of tunnel current from the metal surface is proposed for the case when atomic particles colliding with the surface cause electronic excitation of the solid.     

碳纳米管的变温场发射

考察了温度变化对沉积在钨丝针尖上的碳纳米管场发射的影响，发现碳纳米管场发射电流随温度升高而增大，场发射电流的稳定性基本没有变化. 多根碳纳米管的场发射特性随温度变化出现偏离Fowler-Nordheim理论的现象，这种现象可能来自碳纳米管的不均匀性.     

场发射栅孔阵列的制备

采用硅的局部氧化技术以及湿法刻蚀技术,利用2.6 μm的光刻掩模板在n型硅片上形成了栅极孔径为1 μm的场发射阴极的栅极空腔阵列,实现了用大阵点尺寸的栅极掩模板制备较小尺寸栅孔阵列。硅的湿法刻蚀溶液采用各向同性的硝酸和氢氟酸混合溶液,刻蚀后空腔的深度和宽度均随刻蚀时间线性增加。同时,由于刻蚀溶液具有较高的Si/SiO2 刻蚀选择比,栅极孔径随刻蚀时间增大的速度远低于深度和宽度增大的速度,栅极孔径主要取决于掩模的尺寸和氧化层的厚度。通过选择掩模板的尺寸以及氧化层的厚度,采用局部氧化技术和湿法刻蚀技术能够制备出微米或亚微米的场发射阴极的栅极空腔阵列。     

场发射栅孔阵列的制备

 采用硅的局部氧化技术以及湿法刻蚀技术,利用2.6 μm的光刻掩模板在n型硅片上形成了栅极孔径为1 μm的场发射阴极的栅极空腔阵列,实现了用大阵点尺寸的栅极掩模板制备较小尺寸栅孔阵列。硅的湿法刻蚀溶液采用各向同性的硝酸和氢氟酸混合溶液,刻蚀后空腔的深度和宽度均随刻蚀时间线性增加。同时,由于刻蚀溶液具有较高的Si/SiO₂ 刻蚀选择比,栅极孔径随刻蚀时间增大的速度远低于深度和宽度增大的速度,栅极孔径主要取决于掩模的尺寸和氧化层的厚度。通过选择掩模板的尺寸以及氧化层的厚度,采用局部氧化技术和湿法刻蚀技术能够制备出微米或亚微米的场发射阴极的栅极空腔阵列。     

Fabrication of carbon nanotube bundles and measurement of field electron emission properties

Carbon nanotube (CNT) bundles are synthesized on rough polycrystalline ceramic wafers by pyrolyzing ferrocene/melamine mixtures through a three-step process in a single stage furnace in an Ar atmosphere. The CNTs are multi-walled and have outer diameters from 10 to 90 nm and lengths from 20 to 100 microns. These CNTs display a bamboo-like structure with open graphite layers and defects at the outer surfaces. Field electron emission (FEE) measurements show that the turn-on electrical field is 2.9 V/m and the field enhancement factor is 2700. PACS 61.46.+w; 82.30.Lp; 79.70.+q     

Field emission from submicron-grained tungsten

Tungsten specimens subjected to intense plastic strains up to the true logarithmic deformation of e=7 were studied. Transmission electron microscopy revealed a decrease in the mean size of crystal grains down to 100 nm. The field ion-and field electron-emission studies revealed considerable distinctions between the energy distributions for electrons in submicron-grained tungsten and in a coarse-grained metal.     

High power semiconductor laser array with single-mode emission

The semiconductor laser array with single-mode emission is presented in this paper. The 6-μ m-wide ridge waveguides (RWGs) are fabricated to select the lateral mode. Thus the fundamental mode of laser array can be obtained by the RWGs. And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A, after that, a kink will appear. The slow axis (SA) far-field divergence angle of the unit is 13.65°. The beam quality factor M² of the units determined by the second-order moment (SOM) method, is 1.2. This single-mode emission laser array can be used for laser processing.     

氧化锌纳米棒场发射性能研究

采用简单物理气相沉积法制备出取向和非取向的氧化锌纳米棒，他们的场致电子发射性能测量结果表明，ZnO纳米棒具有较好的场发射性能，但是高度取向的ZnO纳米棒阵列并不利于获得高的场致电子发射电流密度.这可能是由于高密度ZnO纳米棒之间具有较高的屏蔽效应，降低了ZnO纳米棒阵列的场放大因子，从而影响了其场发射性能.相反，非取向ZnO纳米棒由于相互之间的屏蔽效应比较弱，而且表面存在容易成为发射中心的微小突起，表现出较好的场发射效果.这些结果不仅有助于加深我们对准一维纳米材料场致电子发射性能的理解，也为未来场发射电子器件的实际应用提供了可靠的依据. 关键词： 氧化锌 场发射 非取向     

Field emission of monoenergetic spin-polarized electrons

Field emission from a tungsten tip, covered by a layer of crystallized ferromagnetic europium sulfide, leads to an electron beam with a current of 10⁻⁸ A, an energy width of less than 100 meV, and a spin polarization of about 0.85 at a tip temperature of 9 K. Proper annealing of the EuS layer is crucial.     

Superradiant emission from an array of long Josephson junctions

We report measurements on lumped arrays of eight long Josephson junctions, series dc biased and coupled to a microwave transmission line. Fluxon oscillations in different junctions can be mutually locked and, concurrently, the power of the emitted radiation increases according to the conjecture of superradiance.     

Electron emission studies of CNTs grown on Ti and Ni containing amorphous carbon nanocomposite films

Carbon nanotubes (CNTs) were grown successfully on the as-deposited dual metal (Ti and Ni) embedded films using a radio frequency plasma-enhanced chemical vapor deposition system. The microstructure of CNTs grown on the dual metal films proved to be heavily dependent on the percentages of metals included, varying both in size and in density. Electron emission tests carried out on the films with CNTs grown showed that the threshold field was dependent on the surface morphology of the CNTs, with the lowest threshold field at 3.5 V/μm from 2.5% Ti/Ni film with CNTs. The field enhancement factor, β, of the emitting tips was also calculated from the Fowler–Nordheim plots, where CNTs from the 2.5% Ti/Ni film gave the highest field enhancement factor. However, it was observed that films with a single metal of either Ti or Ni did not manage to grow CNTs, possibly due to a lack of catalyst centres at the surface of the films. It was believed that the Ni nanoclusters acted as catalysts centres giving a rather uniform but randomly orientated type of CNTs. Results obtained pointed that the fabricated nanocomposite material could be a possible choice for cold cathode emitters and the Ti/Ni mixture could be an effective composite for controlling the CNT density.     

单颗粒CVD金刚石的场发射

利用改造的扫描电子显微镜(SEM)设备，在SEM腔体中利用钨(W)探针测试了单颗粒金刚石的I-V与场发射特性，结果表明结晶良好的金刚石的I-V特性服从欧姆定律，而孤立的菜花状金刚石颗粒(cauliflower-like diamond)的I-V特性基本符合Pool-Frenkel输运特性.场发射特性表明，结晶良好的金刚石薄膜基本没有场发射，而孤立的菜花状的金刚石颗粒具有一定的场发射.CVD金刚石的场发射过程中，缺陷对电子的输运起主导作用.     

Field emission from nonaligned SiC nanowires

β-SiC nanowires with an average diameter of 8-20 nm were synthesized using a simple thermal evaporation of SiO powders onto activated carbon fibers. Field emission was investigated based on the SiC nanowires deposited on a platinum film. A low turn-on field of 3.1-3.5 V μm⁻¹ was measured at an anode-sample separation of 100-140 μm. This type of SiC nanowires can be applied as field emitters in displays as well as vacuum electronic devices.     

氧化锌纳米线的场发射

热蒸发法在硅基底上制备了任意取向的氧化锌纳米线阵列。经过热蒸发过程，硅基底表面覆盖了大量均匀分布的氧化锌岛，在这些岛上生长出了直径为几十纳米的非定向纳米线。出于实用考虑，基底周围的温度在制备过程中保持在500°C以下。从这些氧化锌纳米线获得了场发射。测得10μA/cm2所对应的开启场强为3.0V/μm。并且用透明阳极技术研究了发射中心分布。观察到场发射来自于整个样品表面。从这些结果可以看出氧化锌纳米线在平板显示器中有着巨大的应用潜力.     

相控阵天线电磁发射特性的统计分析

相控阵天线波束指向高度动态变化,其电磁发射特性呈现出显著的统计规律,分析和测试所需的资源巨大。采用多项式混沌展开（PCE）探究二维平面相控阵天线发射特性的统计特性,根据方向图乘积定理等确定代表相控阵天线电磁发射特性的目标函数,利用PCE建立目标函数的等效代理模型。从理想点源构成的相控阵天线着手,分别考虑了主波束指向服从均匀分布和正态分布两种典型情况,通过计算机仿真模拟得到等效代理模型的概率密度函数和累积分布函数,并使用传统的蒙特卡罗方法结果作为参照来评估PCE方法的有效性和可靠性,最后对小型偶极子相控阵天线的波束指向服从两种典型分布的情况进行讨论。仿真对比结果表明,PCE方法在保证结果准确度的同时可以大大减少采样样本点数目,大幅提升相控阵天线电磁发射特性分析和测试的效率。