Photoionization of a charged exciton in a GaAs/GaAlAs corrugated quantum well

Binding energies of a charged exciton as a function of well width of a GaAs/GaAlAs corrugated quantum well are investigated. The calculations have been performed by the variational method based on a two parametric trial wave function within a single band effective mass approximation. We have also included the effect of nonparabolicity of the conduction band of GaAs. We study the spectral dependence of the charged exciton in a GaAs/GaAlAs corrugated quantum well as a function of well width. The photoionization cross section for the charged exciton placed at the center of the quantum well is computed as a function of normalized photon energy. The cross-section behavior as a function of incident energy is entirely different in the two cases of radiation being x-direction (along the growth direction) or z-direction. The interband emission energy as a function of well width is calculated and the dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width. Our results are compared with the other existing literature available.     

Laser field induced interband absorption in a strained GaAs/GaAlAs double quantum well system

Effect of laser field intensity on exciton binding energies is investigated in a GaAs/ GaAlAs double quantum well system. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of laser field. The laser field induced photoionization cross-section for the exciton placed at the centre of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross-section on photon energy is carried out for the excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The intense laser field dependence of interband absorption coefficient is investigated. The results show that the exciton binding energy, interband emission energy, the photoionization cross-section and the interband absorption coefficient depend strongly on the well width and the laser field intensity. Our results are compared with the other existing literature available.     

Exciton optical absorption coefficients and refractive index changes in a strained InAs/GaAs quantum wire: The effect of the magnetic field

Magnetic field induced exciton binding energy is investigated in a strained InAs/GaAs quantum wire within the framework of single band effective mass approximation. The strain contribution to the potential is determined through deformation potentials. The interband emission energy of strained InAs/GaAs wire is investigated in the influence of magnetic field with the various structural parameters. Magnetic field induced photoionization cross section of the exciton is studied. The total optical absorption and the refractive index changes as a function of normalized photon energy between the ground and the first excited state in the presence of magnetic field are analyzed. The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and the magnetic field. The occurred blueshift of the resonant peak due to the magnetic field will give the information about the variation of two energy levels in the quantum well wire. The optical absorption coefficients and the refractive index changes are strongly dependent on the incident optical intensity and the magnetic field.     

Hydrostatic pressure effects on exciton states in InAs/GaAs quantum dots

Based on the effective-mass approximation, the hydrostatic pressure effects on exciton states in InAs/GaAs self-assembled quantum dots (QDs) are studied by means of a variational method. Numerical results show that the exciton binding energy has a minimum with increasing dot height for any hydrostatic pressure. The interband emission energy increases when the hydrostatic pressure increases. In particular, we find that hydrostatic pressure has a remarkable effect on exciton states for small QD size. Our results are in agreement with experiment measurements.     

Pressure-induced non-linear optical properties in a wurtzite GaN/Al x Ga1− x N strained quantum dot

The effects of hydrostatic pressure on the exciton ground-state binding energy and the interband emission energy in a GaN/Al _x Ga_{1??? x} N quantum dot are investigated. The effects of strain and the internal field due to spontaneous and piezo-electric polarizations are included in the Hamiltonian. Numerical calculations are performed using variational procedure within the framework of single-band effective-mass approximation. The dependence of non-linear optical processes on the dot sizes is brought out in the influence of pressure. Pressure-induced optical properties are obtained using the compact density matrix approach. The effects of hydrostatic pressure on the linear, third-order non-linear optical absorption coefficients and the refractive index changes of the exciton as a function of photon energy are calculated. Our results show that the effects of pressure and the geometrical confinement have great influence on the optical properties of GaN/Al _x Ga_{1??? x} N dot.     

Hydrostatic pressure on optical absorption and refractive index changes of a shallow hydrogenic impurity in a GaAs/GaAlAs quantum wire

The effect of hydrostatic pressure on the binding energy of a hydrogenic impurity in a GaAs/GaAlAs quantum wire is discussed. Calculations have been performed using Bessel functions as an orthonormal basis within a single band effective mass approximation. Pressure induced photoionization cross section of the hydrogenic impurity is investigated. The total optical absorption and the refractive index changes as a function of normalized photon energy between the ground and the first excited state in the presence of pressure are analysed. The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and the pressure.     

Scattering of excitons by excitons in semiconducting quantum well structures

We have theoretically investigated the scattering of excitons by excitons in a two-dimensional semiconducting quantum well system. The scattering cross sections have been calculated using the Born approximation for both the elastic and inelastic scattering of the excitons by excitons. The threshold for inelastic scattering is increased over the value in a bulk semiconductor because of the enhancement of the exciton binding energy by its confinement. The behavior of the scattering cross section as a function of the energy of relative motion of the excitons is different than in the bulk and the cross section is a more sensitive function of the ratio of the electron and hole masses than in the bulk.     

Electric field induced exciton binding energy and its non-linear optical properties in a narrow InSb/InGaxSb1−x quantum dot

The effect of electric field on the binding energy, interband emission energy and the non-linear optical properties of exciton as a function of dot radius in an InSb/InGa_xSb_1?x quantum dot are investigated. Numerical calculations are carried out using single band effective mass approximation variationally to compute the exciton binding energy and optical properties are obtained using the compact density matrix approach. The dependence of the nonlinear optical processes on the dot sizes is investigated for various electric field strength. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of electric field induced exciton as a function of photon energy are obtained. It is found that electric field and the geometrical confinement have great influence on the optical properties of dots.     

Pressure-induced interband optical transitions in an InAs0.8P0.2/InP quantum wire

Hydrostatic pressure-induced exciton binding energy in an InAs_0.8P_0.2/InP quantum well wire is investigated taking into account the geometrical confinement effect. Numerical calculations are carried out using variational approach within the single-band effective-mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is found with the consideration of spatial confinement effect in the influence of pressure. The second-order susceptibility of harmonic generation is carried out using the compact density method. The optical gain as a function of incident photon energy is computed in the presence of the hydrostatic pressure. The result shows that the range of wavelength for the potential applications of telecommunications (1.3–1.55 μm) can be obtained by the application of the hydrostatic pressure. We believe that the obtained results can be applied for tuning the ranges of fibre optical wavelength in telecommunications.     

Effect of Hydrostatic Pressure on Interband Transitions in Coupled Quantum Wires

We calculate the exciton binding energy and interband optical absorption in a rectangular coupled quantum wire under the hydrostatic pressure in the effective-mass approximation, using the variational approach. It is found that the interband optical absorption strongly depend on the hydrostatic pressure and the coupling parameter, and that the magnitude of the absorption coefficient for the HH1-E1 transition in the coupled quantum wire is larger than that of the single quantum wire.     

高离化态Au离子光电离过程的理论研究

基于多组态Dirac-Fock方法的程序包GRASP92和RATIP及在此基础上最新发展的RELPHOTO08程序, 系统地研究了高离化态金离子M壳层的光电离截面随入射光子能量、 离化度以及壳层的变化规律。结果表明: 光电离截面随光子能量的增大而单调减小; 电离nl电子时, 如果相关电子的主量子数较大, 则该电子存在与否对其光电离截面几乎没有影响; 在同一离化度下, 角量子数l可引起两种性质不同的效应, 其相互竞争可导致光电离截面随入射光子能量的复杂变化。Based on multiconfiguration Dirac Fock method and the corresponding packages GRASP92 and RATIP, as well as the newly developed RELPHOTO08, the variations of M subshell photoionization cross sections with the photon energy, ionization degree and subshells for highly charged gold ions are studied systemically. The present results show that the cross sections are decreasing monotonously with the photon energy; for the photoionization of nl electrons, if the principal quantum number of removed electron is large enough, the cross sections are essentially unchanged upon the presence or absence of outer electrons; for same ionization degree, the angular quantum number introduces two opposite effects which could exist simultaneously, and the intricate variations of cross sections with the photon energy originate from the competition between these two different effects.     

Self-consistent calculations of exciton, biexciton and charged exciton energies in InGaN/GaN quantum dots

We present theoretical calculations of the variation of exciton energies in truncated conical InGaN quantum dots (QDs) in a GaN matrix with dot size and indium composition. We compute the built-in strain-induced and spontaneous piezoelectric fields using a surface integral method that we have recently derived, and confirm that the built-in fields can be of the order of a few MV/cm, resulting in a spatial separation of the electrons and holes. The ground state wavefunctions of the exciton (X⁰), biexciton (2X⁰) and the two charged excitons (X⁻ and X⁺) are then calculated in the Hartree approximation, using a self-consistent finite difference method. We find that the electron–hole recombination energy is always blue-shifted for the charged excitons X⁻ and X⁺, with a further blue-shift for the biexciton, and this blue-shift increases with increasing indium content. We describe the trends in interband transition energy and the scale of the blue-shift with dot size, shape and composition. We conclude that spectroscopic studies of the exciton, charged excitons and biexciton should provide a useful probe of the structural and piezoelectric properties of GaN-based QDs.     

Stimulated terahertz emission from intraexcitonic transitions in Cu2O

We report the first observation of stimulated emission of terahertz radiation from internal transitions of excitons. The far-infrared electromagnetic response of Cu2O is monitored via broadband terahertz pulses after ultrafast resonant excitation of three-dimensional 3p excitons. Stimulated emission from the 3p to the energetically lower 2s bound level occurs at a photon energy of 6.6 meV, with a cross section of approximately 10(-14) cm2. Simultaneous excitation of both exciton levels, in turn, drives quantum beats, which lead to efficient terahertz emission sharply peaked at the difference frequency.     

Size dependent effective band gap,optical absorption coefficients and refractive index changes in a wide ZnS/Zn1−xMgxS strained quantum well

Exciton binding energy of a confined heavy hole exciton is investigated in a Zn_1−xMg_xS/ZnS/Zn_1−xMg_xS single strained quantum well with the inclusion of size dependent dielectric function for various Mg content. The effects of interaction between the exciton and the longitudinal optical phonon are brought out. The effect of exciton is described by the effective potential between the electron and hole. The interband emission energy as a function of well width is calculated for various Mg concentration with and without the inclusion of dielectric confinement. Non-linear optical properties are carried out using the compact density matrix approach. The dependence of nonlinear optical processes on the well width is investigated for different Mg concentration. The linear, third order non-linear optical absorption coefficients values and the refractive index changes of the exciton are calculated for different concentration of magnesium content. The results show that the exciton binding energy is found to exceed LO phonon energy of ZnS for x>0.2 and the incorporation of magnesium ions and the effect of phonon have great influence on the optical properties of ZnS/Zn_1−xMg_xS quantum wells.     

Photoionization cross section of a donor impurity in a two-dimensional anisotropic quantum dot

A system of an electron with a hydrogenic impurity confined in a two-dimensional anisotropic quantum dot has been investigated. We report a calculation for the binding energy of a donor impurity. The important feature of a donor impurity in a two-dimensional anisotropic quantum dot is obtained via an analysis of the binding energy. The photoionization cross section associated with intersubband transitions has been calculated. The results are presented as a function of the incident photon energy. The results show that the photoionization cross section of a donor impurity in a two-dimensional anisotropic quantum dot is strongly affected by the degree of anisotropy and the size of the quantum dot.     

Electric field-induced nonlinear optical properties of a hydrogenic impurity in a GaAs/GaAlAs quantum dot: effects of spin–orbit interactions

Nonlinear optical properties, optical rectification coefficients and the second-order and third-order harmonic generation coefficients as a function of photon energy are dealt in a GaAs/Ga_0.8Al_0.2As quantum dot in the presence of electric field and the spin–orbit interactions. The Dresselhaus and the Rashba spin–orbit interactions are added in the Hamiltonian. The electric field-induced photoionization cross section with the normalized photon energy for an on-centre donor impurity in the quantum dot is studied. The effect of nonparabolicity is included in the Hamiltonian. The spin–orbit interaction as a function of photon energy is investigated. The computations are carried out within the framework of the single band effective mass approximation using variational technique and the compact density approach. It is found that the spin–orbit interaction coefficients show strong effects on the resonant position of harmonic generations. The results are compared with the recent investigations.     

Temperature and density dependence of exciton lifetimes in GaAs/AlGaAs multiple quantum wells

The photoluminescence linewidths and excition lifetimes of free excitons in GaAs/AlGaAs multiple quantum wells were systematically investigated as a function of temperature, quantum well width, and carrier density. The experimental results showed that the exciton decay processes were strongly related to the linewidth of the exciton and the exciton binding energy.     

Photoionization cross section and refractive-index change of hydrogenic impurities in a CdS-SiO<Subscript>2</Subscript> spherical quantum dot

In this study, we calculate the photoionization cross section and refractive-index change of an on-center hydrogenic impurity in a CdS-SiO₂ spherical quantum dot. In numerical calculations, both the finite- and infinite-confinement cases are considered and a variational scheme is adopted to determine the energy eigenvalues for the impurity. The variations of the photoionization cross section with the dot radius, the refractive-index change, and the normalized photon energy are investigated, and the effect of the potential-barrier height on the cross section is discussed. The results obtained show that the photoionization cross section and the refractive-index change in CdS-SiO₂ spherical quantum dots are sensitively dependent on the incident optical intensity and on the dot sizes.     

Double K-shell photoionization of low-Z atoms and He-like ions

We report on the investigation of the photon energy dependence of double 1s photoionization of light atoms and compare the cross sections for hollow atom and He-like ion production. Measurements of the Kα hypersatellite x-ray spectra of Mg, Al, and Si were carried out using the Fribourg high-resolution x-ray spectrometer installed at the ID21 and ID26 beam lines at the ESRF. The double-to-single photoionization cross section ratios were derived as a function of the incident photon beam energy and compared to convergent close-coupling (CCC) calculations for He-like ions. The dynamical electron-electron scattering contribution to the DPI cross-sections was found to be more important for neutral atoms than for the He isoelectronic series.     

Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.