m面蓝宝石上ZnO/ZnMgO多量子阱的制备及发光特性研究

利用等离子体辅助分子束外延设备(P-MBE)在m面的蓝宝石(m-Al₂O₃)衬底上制备了ZnO/Zn_0.85Mg_0.15O多量子阱.反射式高能电子衍射谱(RHEED)图样的原位观察表明,多量子阱结构是以二维模式生长的.从光致发光谱中可以看到ZnO/Zn_0.85Mg_0.15O多量子阱在室温仍具有明显的量子限域效应.在290 K时阱宽为3 nm的ZnO/Zn_{0.85关键词： 等离子体辅助分子束外延 ZnO多量子阱 光致发光}     

The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates

The ZnO/Zn_0.85Mg_0.15O multiple quantum wells (MQWs) were fabricated on Si(111) substrates by plasma-assisted molecular beam epitaxy (P-MBE) using ZnMgO as buffer layers. The RHEED images indicated that the MQWs were of high quality. The free exciton (FE) emission line originated from the well region and its phonon replicas (FE-1LO, FE-2LO and FE-3LO) were observed in the 86 K photoluminescence (PL) spectrum. Blueshift of the FE line in the MQW sample as compared to that in the ZnO bulk was found at temperatures as high as room temperature. Time-resolved PL study on the FE line showed a fast lifetime of 140 ps. The high quality of the MQW structure was revealed by the observation of the quantum-confinement-induced blueshift and shortened lifetime of the FE emission.     

Structural and optical properties of non-polar ZnO/Zn0.81Mg0.19O multiple quantum wells grown on r -plane sapphire substrates by plasma-assisted molecular beam epitaxy

This work investigates the structural and optical properties of non-polar ZnO/Zn_0.81Mg_0.19O multiple quantum wells (MQWs), which have been prepared on $r$ -plane sapphire substrates by plasma-assisted molecular beam epitaxy (MBE). The MQWs are ( $11\bar{2}0$ ) oriented ( $a$ -plane) as identified by the X-ray diffraction pattern. Structural properties are anisotropic and surfaces of MQWs show stripes running along the ZnO $c$ -axis direction. Sharp interfaces between the well layers and barrier layers can be clearly resolved by the secondary ion mass spectroscopy (SIMS) analysis. The room-temperature photoluminescence (PL) resulting from the well regions exhibits a significant blueshift with respect to ZnO single layer. Exciton emission in the ZnO QW is resolved into two components in the temperature dependence of the PL spectra. Two types of excitons are responsible for this feature. The excitons trapped by the potential minima dominate at low temperature, and the excitons localized in the “free exciton states” dominate at relatively high temperature. An activation energy of 7.3 meV for quenching of the exciton emission is in good agreement with the transition of the two types of excitons.     

Characterization of [ZnO]m[ZnMgO]n multiple quantum wells grown by molecular beam epitaxy

Thermal stability of single-crystalline [ZnO]_m[Zn_0.7Mg_0.3O]_n multiple quantum wells (MQWs) grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy is reported. X-ray diffraction analysis revealed that these MQWs were grown as designed with a fixed Zn_0.7Mg_0.3O barrier width of and a series of ZnO well widths of . Cathodoluminescence spectra from these MQWs consisted of two major peaks; one was the emission from the bound excitons in Zn_0.7Mg_0.3O barrier layers, and the other was that from the confined excitons in ZnO well layers. These structural and optical properties were found to be dramatically changed by the ex situ annealing treatments over 700 °C. These changes were presumably due to the onset of phase separation of the Zn_0.7Mg_0.3O barrier layers with pronounced Mg diffusion toward the ZnO wells.     

Evaluating the Quantum Confinement Effect of Isolated ZnO Nanorod Single-Quantum-Well Structures Using Near-Field Ultraviolet Photoluminescence Spectroscopy

Using low-temperature near-field spectroscopy, we obtained spatially and spectrally resolved photoluminescence (PL) images of individual ZnO nanorod single-quantum-well structures (SQWs) with a spatial resolution of 20 nm. We observed the dependence of the quantum confinement effect of the PL peak on the well width (L _aw), from which the linewidths of near-field PL spectra of ZnO nanorod SQWs (L _aw = 2.5 and 3.75 nm) were determined to be as narrow as 3 meV. However, near-field PL spectra of individual SQWs with L _aw = 5.0 nm exhibited two PL peaks, presumably due to strains or defects in the ZnMgO in the nanorod SQWs. Since the exciton in a quantum structure is an ideal two-level system with long coherence times, our results provide criteria for designing nanophotonic devices.     

Structure and optical properties of multi-quantum wells grown on Si(111) substrates

A series of ZnO/Zn_1−xMg_xO multi-quantum wells (MQWs) were grown on Si(111) substrates by pulsed laser deposition (PLD), with different well widths and depths. Transmission electron microscopy (TEM) analysis revealed that all the samples exhibited a good periodic structure with clear interfaces. Moreover, temperature- dependent behavior of excitonic photoluminescence (PL) was investigated in order to investigate the mechanism of the carrier dynamics. In the temperature range studied, the luminescence was dominated by localized exciton (LE) emission, which was significantly blueshifted with respect to the ZnO single layer, due to the well-known quantum-size effect. The blueshift values increased with elevating Mg compositions in barrier layers or decreasing well thickness, being consistent with the calculated results. The relevant activation energies were deduced, varying in a range of 6.2 to 22 meV.     

Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Photoluminescence (PL) spectra and time-resolved PL are measured from around 10 to 300 K for the InGaN/GaN single quantum wells (SQWs) with well widths of 1.5, 2.5, 4 and 5 nm. For the SQWs with the well widths of 1.5 and 2.5 nm, the peak position of PL exhibits an S-shaped shift with increasing temperature. The radiative recombination time τ_RAD begins to increase at the temperature for the position to change from the red-shift to the blue-shift. The steep increase of τ_RAD is observed beyond the temperature from the blue-shift to the red-shift. For the SQWs with the well widths of 4 and 5 nm, the peak position of PL exhibits a monotonic red-shift. τ_RAD decreases at first and then increases with temperature. It is about 100-times longer in the low temperature region and about 10-times longer at room temperature as compared with those of the SQWs with narrower widths.     

InGaN/GaN多量子阱的组分确定和晶格常数计算

采用金属有机化学气相沉积(MOCVD)技术以蓝宝石为衬底在n型GaN单晶层上生长了InGaN/GaN多量子阱结构外延薄膜，利用高分辨X射线衍射(HRXRD)，卢瑟福背散射/沟道(RBS/channeling)，以及光致发光(PL)技术对InGaN/GaN多量子阱结构薄膜分别进行了平均晶格常数计算、In原子替位率计算和In组分的定量分析.研究表明：InGaN/GaN多量子阱的水平和垂直方向平均晶格常数分别为a_epi=0.3195nm，c_epi=0.5198nm，In原子的替位率为99.3%，利用HRXRD和RBS/channeling两种分析技术计算In的组分分别是0.023和0.026，并与样品生长时设定的预期目标相符合，验证了两种实验方法的准确性；而用室温条件下的光致发光谱(PL)来计算InGaN/GaN多量子阱中In的组分是与HRXRD和RBS/channeling的实验结果相差很大，说明用PL测试In组分的方法是不适宜的. 关键词： InGaN/GaN多量子阱 高分辨X射线衍射 卢瑟福背散射/沟道 光致发光     

Quantum-size shift in PbTe/BaF2MQW structure photoluminescence spectra

PbTe/BaF₂multi-quantum-well (MQW) structures were grown on cleaved (111) BaF₂substrates by the MBE method. The substrate temperature was 330 ^°C. The MQWs consist of 10 pairs of 10 nm thickness BaF₂barriers and PbTe wells with widths ranging from 5 to 20 nm. For this highly mismatched system we have measured photoluminescence spectra at 77 K and have demonstrated the quantum-size confinement consistent with the model of wells with infinite barriers. A remarkable deformation shift due to the thermal expansion coefficient difference is observed at cryogenic temperatures.     

ZnMgO/n-ZnO/ZnMgO/p-GaN异质结LED的紫外电致发光

利用等离子体辅助分子束外延( P-MBE)技术制备了ZnMgO/n-ZnO/ZnMgO/p-GaN异质结LED.Ni/Au电极与p-GaN、In电极与ZnMgO之间都形成了良好的欧姆接触.在ZnMgO/n-ZnO/ZnMgO/p-GaN异质结器件中观察到了明显的整流特性.异质结的电致发光强度随着注入电流的增大而逐渐增强...     

Two-dimensional heterostructures based on ZnO

The multiple quantum wells (MQW) Mg_0.27Zn_0.73O/ZnO have been grown by the pulsed laser deposition method with different well widths L _w . The interface roughness of quantum wells was inherited from the bottom one and did not exceed 1 nm. We observed the quantum confinement effect showing up in the blue shift of the exciton peak in the low temperature (8 K) photoluminescence and absorption spectra at well width reduction. The exciton binding energy of the two-dimensional structures Mg_0.27Zn_0.73O/ZnO was two times higher in comparison with the bulk ZnO. It has been established that Einstein’s characteristic temperature Θ _E sharp increase with reduction of well width L _w up to L _w =2.6 nm. It has been revealed that the discontinuity ratio of conduction and valence bands in the heterostructure Mg_0.27Zn_0.73O/ZnO is 0.65/0.35. We demonstrated the abrupt increase in quantum efficiency at a reduction of the well width that allowed us to observe the optically excited stimulated emission in ZnO quantum wells with the excitation threshold of ∼210 kW/cm².     

γ-LiAlO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积(PLD)技术在(302)γ-LiAlO₂衬底上成功生长了非极性的a面(1120) ZnO薄膜. 衬底温度为350℃时，薄膜是混合取向(a向和c向)，以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的(1120)取向，摇摆曲线半高宽0.65°，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性. 衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱(PL)带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1/5. 关键词： 非极性ZnO 2')" href="#">γ-LiAlO₂ PLD 透射谱     

Evidence for barrier-to-well injection of carriers in high quality ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si

High quality ZnO/Zn_0.9Mg_0.1O multiple quantum wells were grown on (111) Si employing epitaxial Lu₂O₃ buffer layer and a thin ZnO nucleation layer. The linewidth of the low temperature ZnO well emission is only 17 meV. The effective recombination lifetime of emission from ZnO wells is 183 ps. Temperature-dependent photoluminescence is investigated to reveal the behavior of the carriers in the multiple quantum wells. Evidence for the barrier-to-well injection is indicated from the thermal quenching of both the barrier and well emissions. Carrier localization and thermal delocalization are observed in ZnMgO cap/barriers. The depth of the local potential well is determined to be ∼7 meV$\sim 7\text{meV}$.     

Temperature‐dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP‐MOCVD have been studied by means of deep ultraviolet time‐integrated photoluminescence (PL) and time‐resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV‐AlGaN/AlGaN MQWs PL emission (E_p) exhibits a similarly anti‐S‐shaped behavior (blueshift – accelerated redshift – decelerated redshift): E_p increases in the temperature range of 5.9–20 K and decreases for 20–300 K, involving an accelerated redshift for 20–150 K and an opposite decelerated redshift for 150–300 K with temperature increase. Especially at high temperature as 300 K, the slope of the E_p redshift tends towards zero. This temperature‐induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析

采用反应射频磁控溅射方法，在Si(001)基片上制备了具有高c轴择优取向的ZnO/MgO多量子阱.利用X射线反射、X射线衍射、电子探针，光致荧光光谱等表征技术，研究了ZnO/MgO多量子阱的结构、成份和光致荧光特性.研究结果表明，多量子阱的调制周期在1.85—22.3 nm之间，所制备的多量子阱具有量子限域效应，导致了室温光致荧光峰的蓝移，并观测到了量子隧穿效应引起的荧光效率下降.建立了基于多声子辅助激子复合跃迁理论的室温光致荧光光谱优化拟合方法，通过室温光致荧光光谱拟合发现，ZnO/MgO比ZnO/ZnMgO多量子阱具有更大的峰位蓝移，探讨了导致光致荧光光谱展宽的可能因素. 关键词： ZnO/MgO 多量子阱 磁控溅射 光致荧光 量子限域效应     

LP MOVPE growth of AlGalnP/GalnP and its application to visible laser diodes

High-quality and uniform bulk layers of (Al _x Ga_1–x )_0.5In_0.5P (x=0–0.7) and AlGalnP/GainP quantum wells (QWs) are grown on 2°-off (100) GaAs substrates by low-pressure metal organic vapour phase epitaxy at a low growth rate of 0.3 nm s^-1. The amount of lattice mismatch and the variation of PL peak energy of (Al_0.5Ga_0.5)_0.5In_0.5P on the 50-mm substrate are less than 6×10^-4 and 2 meV, respectively. (Al_0.5Ga_0.5)_0.5In_0.5P/Ga_0.5In_0.5P SQWs show narrow PL spectra even from a 0.6 nm well measured at 20 K. The variation of PL peak energy from (Al_0.5Ga_0.5)_0.5In_0.5P/Ga_0.5In_0.5P MQWs is less than 10 meV. Also, as-cleaved AlGalnP/GalnP lasers fabricated by a three-step MOVPE show a pulsed threshold current of 82 mA at room temperature, output power of 12 mW, and the lasing wavelength at 668.2 nm.     

Photoluminescence properties of thin nitrogen- and phosphorus-doped ZnO films fabricated using pulsed laser deposition

The production of n- and p-type high-quality film structures is a foreground task in tackling the problem of growing the light-emitting p-n junctions based on zinc oxide. The ZnO:N and ZnO:P thin-film samples are produced from ceramic targets using the pulsed laser deposition. Zn₃N₂, MgO, and Zn₃P₂ are introduced in the ZnO ceramic targets for the fabrication of the p-type ZnO films. Gases O₂ and N₂O are used as buffer gases. The thermal annealing of the ZnO films is employed. The resistance and photoluminescence (PL) spectra of the ZnO films are measured prior to and after annealing. The dependence of the ZnO PL peak amplitude and position prior to and after annealing on the level of doping with nitrogen and phosphorus is established. The PL characteristics of the films are studied at cw optical excitation using a He-Cd laser with a radiation wavelength of 325 nm. The PL spectra in the interval 300–700 nm are recorded by an HR4000 Ocean Optics spectrometer in the temperature range 10–400 K. The effect of the conditions for the film deposition on the PL spectra is analyzed. The effect of the N- and P-doping level of the ZnO films on the PL intensity of the films and the position of the PL bands in the UV region is investigated. The short-wavelength (250–400 nm) transmission spectra of the ZnO:P films are measured. The effect of the P-doping level on the band gap of the ZnO films is studied.     

Near-field optical characterization of GaN and InxGa1−xN/GaN heterostructures grown on freestanding GaN substrates

Using near-field scanning optical microscopy (NSOM), we report the spatial distribution of photoluminescence (PL) intensity in III-nitride-based semiconductor layers grown on GaN substrates. Undoped GaN, In_0.11Ga_0.89N, and In_0.13Ga_0.87N/GaN multi-quantum wells (MQWs) were grown by metal organic chemical vapor deposition (MOCVD) on freestanding GaN substrates. Micro-Raman spectroscopy has been used to evaluate the crystalline properties of the GaN homoepitaxial layers. The variation of the PL intensity from the NSOM imaging indicates that the external PL efficiency fluctuates from 20% to 40% in the 200 nm InGaN single layer on freestanding GaN, whereas it fluctuates from 20% to 60% in InGaN/GaN MQWs. In the NSOM-PL images, bright island-like features are observed. After deconvolution with the spatial resolution of the NSOM, the size of these features is estimated to be in the range of 150–250 nm.     

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells

Transmission electron microscopy (TEM) and photocurrent (PC) measurements were carried out to investigate the microstructural properties and excitonic transitions in In_xGa_1−xAs/In_0.52Al_0.48As multiple quantum wells (MQWs) for x = 0.54, 0.57 and 0.60. TEM images showed that high-quality 11-period In_xGa_1−xAs/In_0.52Al_0.48As MQWs had high-quality heterointerfaces. The results for the PC spectra at 300 K showed that the peaks corresponding to the excitonic transitions from the ground state electronic sub-band to the ground state heavy-hole band (E₁-HH₁) and the ground state electronic sub-band to the ground state light-hole band (E₁-LH₁) became closer to each other with decreasing In mole fraction and that E₁-HH₁ and E₁-LH₁ excitonic peaks shifted to longer wavelength with increasing applied electric field. The calculated values of the E₁-HH₁ interband transition energies were in qualitative agreement with those obtained form the PC measurements with and without applied electric field. These results can be helpful in understanding potential applications of In_xGa_1−xAs/In_yAl_1−yAs MQWs dependent on In mole fraction and applied electric field in long-wavelength optoelectronic devices.     

Growth of wide band gap wurtzite ZnMgO layers on (0001) Al2O3 by radical-source molecular beam epitaxy

Wurtzite structure ZnMgO layers have been grown using radical-source molecular beam epitaxy on high-quality ZnO buffer layers grown on (0001) sapphire substrates. The thickness of the ZnO buffer layers is 300 nm, with full width at half maxim of the HR-XRD (0002) rocking curves as low as 25 arcsec. In-situ Reflection High-Energy Electron Diffraction (RHEED) was employed for the optimization of the ZnMgO growth. RHEED and X-Ray Diffractometry measurements did not reveal any phase change from the wurzite structure to the rocksalt structure. The C-lattice parameter of Zn_1−xMg_xO films decreased from 5.209 to 5.176 Å with increasing x to 0.2. The surface morphology of the samples was studied with atomic force microscopy. The root mean square roughness values of 200 nm thick ZnMgO (x=0.2) was less than 1 nm. The main photoluminescence peak of Zn_1−xMg_xO shifted to as high as 3.77 eV owing to the increasing Mg composition of up to x=0.2.