Sonochemical synthesis and optical properties of amorphous ZnO nanowires

Large-scale amorphous wire-like ZnO nanostructures were prepared by ultrasonic spray pyrolysis Zn(CO)₅ without involvement of any template or patterned catalyst. The as-obtained amorphous ZnO nanowires were characterized using scanning/transmission electron microscopy, X-ray diffraction/photoelectron spectroscopy, energy-dispersed X-ray spectrometry, selected area electronic diffraction, and high-resolution transmission electron microscopy. The results reveal the as-made noncrystalline samples are about 30–60 nm in diameter and several tens of microns in length and the growth mechanism is tentatively proposed as the self-assembly soft template mechanism. The photoluminescence spectra in all of the as-studied specimens exhibit one wide visible emission peak in about 508 nm. The corresponding PL intensity greatly increased with an annealing temperature, which has an application for a high efficiency vacuum fluorescent displays and a low-voltage phosphor.     

Growth parameters and shape specific synthesis of silicon nanowires by the VLS method

In this paper the effect of varying temperature, pressure and chemical precursors on the vapour–liquid–solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported.     

Cathodoluminescent and electrical properties of an individual ZnO nanowire with oxygen vacancies

A single ZnO nanowire with intrinsic oxygen vacancies is utilized to fabricate four-contact device with focus ion beam lithography technique. Cathodoluminescent spectra indicate strong near-UV and green emission at both room temperature and low temperatures. Experimental measurement shows the temperature-dependent conductivity of the ZnO nanowire at low temperatures （below 100 K）. The further theoretical analysis confirms that weak localization plays an important role in the electrical transport, which is attributed to the surface states induced by plenty of oxygen vacancies in ZnO nanowire.     

Aligned growth of ZnO nanowires and lasing in single ZnO nanowire optical cavities

Ordered ZnO nanowire arrays have been fabricated in N₂ background gas by catalyst-free nanoparticle-assisted pulsed-laser deposition. A single ZnO nanowire was collected in an electrode gap by dielectrophoresis. Under the optical pumping above an exciting laser (λ= 355 nm) threshold of ∼ 334 kW/cm², ultraviolet lasing action in a single ZnO nanowire was observed at room temperature, indicating that the as-synthesized nanowires in pure N₂ background gas are of high quality. The crystalline facets of both ends of the nanowire acted to form an optical cavity. Therefore, the mode spacings corresponding to cavity lengths of the respective nanowires were observed in photoluminescence spectra. PACS 78.66.Hf; 81.07.Bc; 78.67.-n; 81.16.Mk     

Hydrothermal synthesis of MnO2 nanowires: structural characterizations,optical and magnetic properties

In this paper, 1D single-crystalline MnO₂ nanowires have been successfully synthesized by hydrothermal method using KMnO₄ and (NH₄)₂S₂O₈ as raw materials. X-ray diffraction patterns and high-resolution TEM images reveal pure tetragonal MnO₂ phase with diameters of 15–20 nm. Photoluminescence studies exhibited a strong ultraviolet (UV) emission band at 380 nm, blue emission at 452 nm and an extra weak defect-related green emission at 542 nm. UV–visible spectrophotometery was used to determine the absorption behavior of nanostructured MnO₂ and a direct optical band gap of 2.5 eV was acquired by Davis–Mott model. The magnetic properties of the products have been evaluated using vibrating sample magnetometer, which showed that MnO₂ nanowires exhibited a superparamagnetic behavior at room temperature. The magnetization versus temperature curve of the as-obtained MnO₂ nanowires shows that antiferromagnetic transition temperature is 99 K.     

Ordered tellurium nanowire arrays and their optical properties

High-density tellurium (Te) nanowire arrays were prepared in the nanochannels of an anodic aluminum membrane (AAM) template using the electrochemical deposition method. The as-synthesized Te nanowires, typically 60 nm in diameter and up to 40 μm in length, possess a hexagonal single crystalline structure following [001] growth direction. The optical polarization properties of Te nanowire arrays embedded in AAM were investigated using an optic parameter oscillator in the wavelength range from 0.7 to 1 μm. The high optical polarization of the Te nanowire arrays embedded in the AAM assembly system was observed. PACS 81.05.Cy; 78.67.-n; 82.80.Fk.     

GaAs纳米线晶体结构及光学特性

采用分子束外延技术在N-型Si (111)衬底上利用自催化生长机制外延砷化镓(GaAs)纳米线,对生长的纳米线进行扫描电子显微镜测试,纳米线垂直度高,长度直径均匀度好.对纳米线进行光致发光(photoluminescence, PL)光谱测试,发现低温10 K下两个发光峰P1和P2分别位于1.493 eV和1.516 eV,推断可能是纤锌矿/闪锌矿(WZ/ZB)混相结构引起的发光以及激子复合引起的发光;随着温度升高,发现两峰出现红移,并通过Varshni公式拟合得到变温变化曲线.对纳米线进行变功率PL光谱测试,发现P1位置的峰位随功率增加而蓝移,而P2位置的峰位不变.通过拟合发现P1峰位与功率1/3次方成线性相关,判断可能是WZ/ZB混相结构引起的Ⅱ型发光;同时,对P2位置的峰位进行拟合,P2为激子复合发光.对纳米线进行拉曼光谱测试,从光谱图中发现GaAs WZ结构特有的E_2声子峰,因此证明生长出的纳米线为WZ/ZB混相结构,并通过高分辨透射电子显微镜更直观地观察到纳米线的混相结构.     

First-principles optical properties of silicon and germanium nanowires

In this work we study the optical properties of hydrogen-passivated, free-standing silicon and germanium nanowires, oriented along the [1 0 0], [1 1 0], [1 1 1] directions with diameters up to about 1.5 nm, using ab-initio techniques. In particular, we show how the electronic gap depends on wire’s size and orientation; such behaviour has been described in terms of quantum confinement and anisotropy effects, related to the quasi one-dimensionality of nanowires. The optical properties are analyzed taking into account different approximations: in particular, we show how the many-body effects, namely self-energy, local field and excitonic effects, strongly modify the single particle spectra. Further, we describe the differences in the optical spectra of silicon and germanium nanowires along the [1 0 0] direction, as due to the different band structures of the corresponding bulk compounds.     

Excitonic effects and optical properties of passivated CdSe clusters

We calculate the optical properties of a series of passivated nonstoichiometric CdSe clusters using two first-principles approaches: time-dependent density functional theory within the local-density approximation, and by solving the Bethe-Salpeter equation for optical excitations with the GW approximation for the self-energy. We analyze the character of optical excitations leading to the first low-energy peak in the absorption cross section of these clusters. Within time-dependent density functional theory, we find that the lowest-energy excitation is mostly a single-level to single-level transition. In contrast, many-body methods predict a strong mixture of several different transitions, which is a signature of excitonic effects. The majority of the clusters have a series of dark transitions before the first bright transition. This may explain the long radiative lifetimes observed experimentally.     

CdSe量子点的线性和非线性光学特性

主要从实验和理论两个方面,探讨了强受限尺寸区域内不同尺寸对CdSe量子点线性和非线性光学性质的影响.用吸收光谱研究了量子点尺寸与吸收峰之间的关系,用皮秒Z扫描技术研究了共振和非共振情况下(激发光波长分别为532和1064nm),尺寸与三阶非线性极化率之间的关系.基于电子能量状态理论和局域场增强理论对量子点进行分析,得到了CdSe不同尺寸的三阶非线性效应,研究了尺寸对量子点非线性光学性质的影响.结果表明,由激发态粒子数布局改变和纳米颗粒增大引起的非线性共振增强效应相当,二者共同作用使得三阶极化率增强20倍左右,且用532nm的共振频率激发4.3nm CdSe量子点时,χ⁽³⁾具有最大值2.0×10^-11esu. 关键词： CdSe量子点 三阶非线性 Z扫描')" href="#">Z扫描 量子限域效应     

Size-dependent electronic and optical properties of an exciton in CdSe/CdS/CdSe/CdS multilayer spherical quantum dot

The electronic and optical properties of a single exciton in a CdSe/CdS/CdSe/CdS quantum dot is studied by using effective mass approximation with parabolic confinement. The Coloumbic interaction between electron and hole is included by Hartree potential. A self-consistent technique is used to calculate the energy eigenvalue and wavefunction of exciton. Based on this approximation we investigate the effect of core size, shell thickness, well width on exciton binding energy, absorption spectra, and oscillator strength. The results provide the tuning possibility of electronic and optical properties of multilayer quantum dot with layer thickness.     

Current--voltage characteristics of an individual helical CdS nanowire rope

This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current-voltage （I - V） characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the I - V curves and oscillation peaks in the differential conductance （dI/dV - V） curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm.     

CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符 关键词： 量子点量子阱晶体 能带剪裁 加强的带边荧光峰     

云母模板中Cu纳米线的制备及其光学性质研究

利用快重离子辐照的单晶白云母片产生潜径迹,蚀刻得到直径在30—180 nm纳米孔道. 孔道形状依赖于蚀刻时间,蚀刻时间短得到圆柱形孔道,蚀刻时间长得到菱柱形孔道. 从而在云母模板孔道中电化学沉积得到不同直径和形状的Cu纳米线. 通过紫外可见光谱分析,发现铜纳米线的尺寸和形状影响其光学性质. 直径小于60 nm的近似为圆柱状Cu纳米线有一个明显的表面等离子体共振峰和一个微弱的次峰. 随着直径增加,菱柱状的Cu纳米线主峰有明显的红移,次峰逐渐增强. 同时利用扫描电子显微镜、X射线衍射对Cu纳米线的形貌和晶体结构特征进行了表征. 关键词： Cu纳米线 电化学沉积 光学性质 云母模板     

Microstructural and optical properties of europium-doped zinc oxide nanowires

Single-crystal Eu³⁺-doped wurtzite ZnO micro- and nanowires were synthesized by chemical vapor deposition. The nanostructures grew via a self-catalytic mechanism on the walls of an alumina boat. The structure and properties of the doped ZnO were characterized using X-ray diffraction, energy-dispersive X-ray spectroscopy, scanning and transmission electron microscopy, and photoluminescence (PL) methods. A 10-min synthesis yielded vertically grown nanowires of 50–400 nm in diameter and several micrometers long. The nanowires grew along the ±[0001] direction. The Eu³⁺ concentration in the nanowires was 0.8 at.%. The crystal structure and microstructure of were compared for Eu³⁺-doped and undoped ZnO. PL spectra showed a red shift in emission for Eu³⁺-doped (2.02 eV) compared to undoped ZnO nanowires (2.37 eV) due to Eu³⁺ intraionic transitions. Diffuse reflectance spectra revealed widening of the optical bandgap by 0.12 eV for Eu³⁺-doped compared to undoped ZnO to yield a value of 3.31 eV. Fourier-transform infrared spectra confirmed the presence of europium in the ZnO nanowires.     

Modifying optical properties of ZnO nanowires via strain-gradient

We conduct systematical cathodolumiuescence study on red-shift of near-band-edge emission energy in elastic bent ZnO nanowires with diameters within the exciton diffusion length （- 200 nm） in liquid nitrogen temperature （81 K）. By charactering the emission spectra of the nanowires with different; local curvatures, we find a linear relationship between strain-gradient and the red-shift of near-band-edge emission photon energy, an elastic strain-gradient effect in semiconductor similar to the famous flexoelectric effect in liquid crystals. Our results provide a new route to understand the inhomogeneous strain effect on the energy bands and optical properties of semiconductors and should be useful for designing advanced nano-optoelectronic devices.     

掺AlZnO纳米线阵列的光致发光特性研究

采用化学气相沉积方法，以金做催化剂，在Si (100)衬底上制备了掺AlZnO纳米线阵列.扫描电子显微镜(SEM)表征发现ZnO纳米线的直径在30nm左右.X射线衍射(XRD)图谱上只存在ZnO的(002)衍射峰，说明ZnO纳米线沿c轴择优取向.掺AlZnO纳米线阵列的室温光致发光(PL)谱中出现了3个带边激子发射峰：373nm，375nm，389nm.运用激子理论推算出掺AlZnO纳米线的禁带宽度为3.343eV ，束缚激子结合能为0.156eV；纯ZnO纳米线阵列PL谱中3个带边激子发射 关键词： 光致发光 化学气相沉积(CVD) 激子 ZnO纳米线阵列     

Size and temperature dependence of the tensile mechanical properties of zinc blende CdSe nanowires

The effect of size and temperature on the tensile mechanical properties of zinc blende CdSe nanowires is investigated by all atoms molecular dynamic simulation. We found the ultimate tensile strength and Young?s modulus will decrease as the temperature and size of the nanowire increase. The size and temperature dependence are mainly attributed to surface effect and thermally elongation effect. High reversibility of tensile behavior will make zinc blende CdSe nanowires suitable for building efficient nanodevices.     

Photoacoustic characterization of optical and thermal properties of CdSe quantum dots

We report on the optical absorption properties of as prepared CdSe quantum dots (QDs) measured by the photoacoustic (PA) method. CdSe QDs were fabricated by the chemical solution deposition (CD) technique. With increasing growing time, the redshift of the PA spectra can be clearly observed and optical absorption in the visible region due to CdSe Q-dots is demonstrated. The average diameters of the CdSe QDs for each growth time interval is estimated using the effective mass approximation giving diameters ranging from 2.6 nm to 3.4 nm. These values are comparable to those obtained by scanning tunnelling microscope (STM). Thus, PA spectroscopy is useful to obtain the QDs sizes as grown and with no further preparation. In addition, PA measurements provide also the thermal diffusivity of samples of different sizes which in this case show an increase by at least an order of magnitude than the bulk value.     

Eigenstate statistics and optical properties of one-dimensional disordered photonic crystals

Optical eigenstates in one-dimensional disordered photonic crystals were studied. The threshold disorder level was established below which the probability of appearance of an eigenstate at the photonic bandgap center is negligible. The threshold is reached when the relative fluctuation in the optical lengths of the structure periods becomes equal to the square root of one-third of the relative bandgap width. The dependence of the ensemble-averaged structure transmission coefficient on the fluctuation of the period optical length has a break corresponding to the threshold fluctuation.