Design and performance considerations of novel 4H–SiC MESFET with a p-type pillar for increasing breakdown voltage

In this paper, we report a novel Super Junction Metal Semiconductor Field Effect Transistor (SJ-MESFET) where the drift region consists of a p-type pillar in order to improve breakdown voltage. We demonstrate that the depletion region in the drift region can be extended entirely by the p-type pillar leading to a uniform electric field. Therefore breakdown voltage significantly improves. Using two-dimensional and two-carrier device simulation, we have analyzed the various performance and design considerations of the SJ-MESFET. Also we have explained the reasons for improving the performance of the SJ-MESFET when compared to a Conventional Bulk MESFET (CB-MESFET). Detailed numerical simulations demonstrate that for the proposed structure due to decrease in parasitic gate-to-drain capacitor, maximum oscillation frequency increases with respect to CB-MESFET.     

A novel double-recessed 4H-SiC MESFET with partly undoped space region

In this paper, a novel double-recessed 4H-SiC metal semiconductor field effect transistor (MESFET) with partly undoped space region (DRUS-MESFET) is introduced. The key idea in this work is to improve the DC and RF characteristics of the device by introducing an undoped space region. Using two-dimensional and two-carrier device simulation, we demonstrate that breakdown voltage (V_BR) increases from 109 V in conventional double recessed MESFET (DR-MESFET) structure to 144.5 V in the DRUS-MESFET structure due to the modified channel electric field distribution of the proposed structure. The maximum output power density of the DRUS-MESFET structure is about 25.4% larger than that of the DR-MESFET structure. Furthermore, lower gate-drain capacitance (C_GD), higher cut-off frequency (f_T), larger maximum available gain (MAG), and higher maximum oscillation frequency (f_max) are achieved for the DRUS-MESFET structure. The results show that the f_max and f_T of the proposed structure improve 95.6% and 13.07% respectively, compared with that of the DR-MESFET structure. Also, the MAG of the DRUS-MESET is 4.5 dB higher than that of the DR-MESFET structure at 40 GHz. The results show that the DRUS-MESFET structure has superior electrical characteristics and performances in comparison with the DR-MESFET structure.     

一种新型的高功率高频率同轴渡越时间振荡器

 提出了一种高频率和高功率的渡越时间振荡器,并且对其进行了理论和数值研究。这种振荡器采用同轴结构，功率容量大，不需要外加引导磁场聚焦电子束，波束相互作用区短，保持了传统渡越时间振荡器在结构上的简单性和输出信号的稳定性；运用电压为225kV和电流为11kA的电子束进行模拟，在X波段获得了峰值功率为1.4GW，频率为8.335GHz的微波输出。     

一种新型的高功率高频率同轴渡越时间振荡器

提出了一种高频率和高功率的渡越时间振荡器,并且对其进行了理论和数值研究。这种振荡器采用同轴结构,功率容量大,不需要外加引导磁场聚焦电子束,波束相互作用区短,保持了传统渡越时间振荡器在结构上的简单性和输出信号的稳定性;运用电压为225kV和电流为11kA的电子束进行模拟,在X波段获得了峰值功率为1.4GW,频率为8.335GHz的微波输出。     

Omega shape channel LDMOS: A novel structure for high voltage applications

A new device structure for high breakdown voltage and low specific on resistance of the LDMOS device is proposed in this paper. The main idea in the proposed structure is using omega shape channel. The benefits of omega shape channel could be determined by extending depletion region in the drift region that causes low specific on resistance. Also, uniform horizontal electric field would be achieved that results in high breakdown voltage. The proposed structure is called Omega-shape Channel LDMOS (OCH-LDMOS). The simulation with two dimensional ATLAS simulator shows that the breakdown voltage increases to 712 V from 243 V of the conventional LDMOS at 12 µm drift length. Also, effective values of doping, length, and depth of Ω-shape channel are investigated.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

Low sintering temperature MnZn-ferrites for power applications in the frequency region of 400 kHz

In this paper, the effect of cubic zinc metaborate Zn₄O(BO₂)₆ on the sintering of MnZn-ferrites for medium frequency power applications is investigated. Zinc metaborate is synthesized in the laboratory using zinc oxide and boric acid as metal precursors. As observed, when zinc metaborate is added to the MnZn-ferrites at an optimum amount of 0.02 wt%, it significantly enhances densification and therefore allows, for a given density, reduction of the firing temperature by almost 200 °C. MnZn-ferrites exhibiting power losses of 70 mW/cm³ (measured at a frequency of 400 kHz, magnetic field 50 mT and temperature of 90 °C) are synthesized from conventionally milled powders with average particle diameter 0.6 μm, compacted and fired at 1100 °C. Identical experiments conducted under the same conditions on specimens without zinc metaborate additions revealed power losses greater than 300 mW/cm³, because of insufficient densification.     

A novel power divider with arbitrary power division and high coupling efficiency with a single mode fibre

To improve the coupling efficiency of a conventional Ti: LiNbO₃ channel waveguide with a single mode fibre, a promising Ti-Mg double diffused method has been employed to fabricate a single mode power divider. Calculated numerical results have revealed the feasibility of reducing coupling loss as well as radiation loss, and a set of efficient fabrication parameters for this single mode device can be established. The dependence of asymmetric branching angles and output dividing-power-ratios has been studied by adjusting the branching angle.     

半导体激光泵浦单频高功率光纤放大器的研究

在讨论单频高功率光纤放大器工作原理的基础上,评述了单频高功率光纤放大器的最新进展。指出了单频高功率光纤放大器的关键技术:稳定可靠的、光频特性优良的信号源;吸收效率高的、受激布利渊散射泵浦阈值功率低的增益光纤;高效的耦合系统。     

New concedpts for high frequency and high power frequency multipliers and their impact on quasi-optical monolithic array design

Varactors have been extensively employed for harmonic generation, where high cut-off frequency is dependent upon small C _min , which is typically achieved using small device active area. However, small area limits the output power. Furthermore, the power and frequency dependences of the series resistance in the epitaxial region degrade the efficiency and cut-off frequency as well. As a result, currently utilized varactors are only officient for relatively low power generation and limited output frequency. Herein, we describe our new approach where by epitaxially stacking single quantum barrier structures, more than an order of magnitude improvement in cut-off frequency and power handling ability may be possible. Alternatively, by combining a Schottky barrier with stacked single quantum barriers, superior performance can also be achieved. These concepts can be readily employed for quasi-optical frequency multiplier arrays, and appear to result in simplified fabrication compared to other devices.The design of high performance quasi optical arrays requires optimization of the passive (metalization) grid as well as the embedded semiconductor devices. Recent work has resulted in an improved impedance model for the standard diode-loaded strip array, including a quantitative estimate of the shunt capacitance introduced across the diode by the discontinuity of the metal strip at the diode site (gap). The value of this capacitance exceeds the predictedC _min for these new devices. We discuss two grid design approaches that can suppress this capacitance.     

锁频锁相的高功率微波器件技术研究

综述了中国工程物理研究院应用电子学研究所锁频锁相的高功率微波器件最新研究成果,主要包括稳频稳相的相对论速调管放大器和注入锁相的相对论返波管振荡器.针对高功率长脉冲相对论速调管研究中遇到的问题,介绍了该放大器的束波互作用特点、杂频振荡抑制、脉冲缩短、高频段高功率运行、高增益等物理、设计与实验中的关键技术研究概况,使其功率、相位稳定性、增益等性能有了显著提高,S波段环形单注相对论速调管实现了高功率稳相输出,重频25 Hz运行时输出功率大于1 GW,脉宽大于150 ns、相位波动18°,高增益运行时在注入微波功率数kW条件下也实现类似功率和相位水平;采用同轴多注器件结构,突破了速调管高频段运行条件下高效率电子束引入和高功率束波转换技术等难题,使X波段相对论速调管在注入功率30 kW条件下实现了功率大于1 GW的放大输出,效率为34%,相位波动为15°.在掌握相对论返波管技术的基础上,利用返波管的高效率和结构紧凑的优点,开展了注入调制电子束锁相的相对论返波管研究,采用百kW级的种子微波实现了对GW量级输出微波的相位锁定.该研究结果对功率合成、粒子加速和多功能雷达等技术具有重要的推动作用.     

A novel synthesis of size-controllable mesoporous NiMoO<Subscript>4</Subscript> nanospheres for supercapacitor applications

A novel hydrothermal emulsion method is proposed to synthesize mesoporous NiMoO₄ nanosphere electrode material. The size of sphere-shaped NiMoO₄ nanostructure is controlled by the mass ratio of water and oil phases. Nickel acetate tetrahydrate and ammonium heptamolybdate were used as nickel and molybdate precursors, respectively. The resultant mesoporous NiMoO₄ nanospheres were characterized by X-ray diffraction, N₂ adsorption and desorption, scanning electron microscopy, and transmission electron microscopy. The electrochemical performances were evaluated by cyclic voltammetry (CV), cyclic chronopotentiometry (CP), and electrochemical impedance spectroscopy (EIS) in 6 M KOH solution. The typical mesoporous NiMoO₄ nanospheres exhibit the large specific surface area of 113 m² g^?1 and high specific capacitance of 1443 F g^?1 at 1 A g^?1, an outstanding cyclic stability with a capacitance retention of 90 % after 3000 cycles of charge-discharge at a current density of 10 A g^?1, and a low resistance.     

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range.     

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk growth by the sublimation method has resulted in the commercial release of 100 mm n-type 4H-SiC wafers and the demonstration of micropipe densities as low as 0.7 cm⁻² over a full 100 mm diameter. Modelling results link the formation of basal plane dislocations in SiC crystals to thermoelastic stress during growth. A warm-wall planetary SiC-VPE reactor has been optimized up to a 8×100 mm configuration for the growth of uniform 0.01–80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1×10¹⁴ cm⁻³, and intentional p- and n-type doping from 1×10¹⁵ to >1×10¹⁹ cm⁻³. We address the observed degradation of the forward characteristics of bipolar SiC PiN diodes [H. Lendenmann, F. Dahlquist, J.P. Bergmann, H. Bleichner, C. Hallin, Mater. Sci. Forum 389–393 (2002) 1259], and discuss the underlying mechanism due to stacking fault formation in the epitaxial layers. A process for the growth of the epitaxial layers with a basal plane dislocation density <10 cm⁻² is demonstrated to eliminate the formation of these stacking faults during device operation [J.J. Sumakeris, M. Das, H.McD. Hobgood, S.G. Müller, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter Jr., Mater. Sci. Forum 457–460 (2004) 1113].     

A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement

In this paper, we present the unique features exhibited by a novel nanoscale SiGe-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET) with modified channel band energy. The key idea in this work is to modify the band energy in the channel for improving electrical performances. Graded Ge composition profile is employed in the channel that leads to call the proposed structure as GC-SGOI structure. Using two-dimensional two-carrier simulation we demonstrate that the GC-SGOI structure has higher saturation velocity in comparison with stepped (SC-SGOI) and uniform (UC-SGOI) germanium composition due to the high conduction and valence bands slopes by using graded Ge composition profile. Also, our results show that the GC-SGOI exhibit excellent properties not only higher mobility, drain current and saturation velocity but also hot electron degradation improvement and better reliability. Therefore, refer to the results, the GC-SGOI structure has superior performances in comparison with the SC- and UC-SGOI structures which leads to be a good candidate for VLSI circuits.     

A novel slotted helix slow-wave structure for high power Ka-band traveling-wave tubes

A novel slotted helix slow-wave structure （SWS） is proposed to develop a high power, wide-bandwidth, and high reliability millimeter-wave traveling-wave tube （TWT）. This novel structure, which has higher heat capacity than a conven- tional helix SWS, evolves from conventional helix SWS with three parallel rows of rectangular slots made in the outside of the helix tape. In this paper, the electromagnetic characteristics and the beam-wave interaction of this novel structure operating in the Ka-band are investigated. From our calculations, when the designed beam voltage and beam current are set to be 18.45 kV and 0.2 A, respectively, this novel circuit can produce over 700-W average output power in a frequency range from 27.5 GHz to 32.5 GHz, and the corresponding conversion efficiency values vary from 19% to 21.3%, and the maximum output power is 787 W at 30 GHz.     

A femtosecond self-mode-locked Ti:sapphire laser with high stability of pulse-repetition frequency and its applications

The spectral characteristics and stability of a frequency of intermode beats of a fs self-mode-locked Ti:sapphire laser are investigated. An active method is used to obtain high stability. The frequency stability of intermode beats not lower than 1.27×10⁻¹² rms in 50 s is achieved. Possible applications of the setup, such as measurement of large frequency intervals in the optical range, creation of optical frequency synthesizers, etc., are proposed. The physical principles for the creation of an optical clock of a new type using a highly stable fs Ti:sapphire laser are considered. Received: 7 May 1999 / Published online: 27 October 1999     

An equivalent circuit characterization of power MOSFET accounting for high field and high frequency effects

An equivalent circuit model for analyzing the AC characteristics of power VDMOS transistors is presented. The model accounts for high field and saturation effects. This is achieved by incorporating dependent voltage and current sources in the device model. Results are given for the AC characteristics of a POLYFET F2001 Power VDMOSFET rated with a drain current of 1.4A, power out of 2.5W at 1GHz. The linear, quasi-saturation and saturation regions of the IV characteristics are accounted for in the analysis. The small signal device parasitics are extracted through s-parameter methods. The s-parameter results were used to extract the frequency dependent parasitics including parasitic capacitances, inductances and transconductances.