Proximity-driven source of highly spin-polarized ac current on the basis of superconductor/weak ferromagnet/superconductor voltage-biased Josephson junction

We theoretically investigate an opportunity to implement a source of highly spin-polarized ac current on the basis of superconductor/weak ferromagnet/superconductor (SFS) voltage-biased junction in the regime of essential proximity effect and calculate the current flowing through the probe electrode tunnel coupled to the ferromagnetic interlayer region. It is shown that while the polarization of the dc current component is generally small in case of weak exchange field of the ferromagnet, there is an ac component of the current in the system. This ac current is highly spin-polarized and entirely originated from the non-equilibrium proximity effect in the interlayer. The frequency of the current is controlled by the voltage applied to SFS junction. We discuss a possibility to obtain a source of coherent ac currents with a certain phase shift between them by tunnel coupling two probe electrodes at different locations of the interlayer region. The article is published in the original.     

Tunneling characteristics of a double-barrier magnetic junction

The spin-polarized current through a planar double-barrier magnetic tunnel junction has been calculated using the quasi-classical model. The coefficients of electron transmission through the barriers have been calculated in terms of the quantum theory. The dependences of the transmission coefficients, spinpolarized currents, and tunneling magnetoresistance on the applied voltage under resonant conditions have been shown. Under non-resonant conditions, the tunneling magnetoresistance has been compared with the experimental data.     

Spin current through a tunnel junction

We derive an expression for the spin current through a tunnel barrier in terms of many-body Green’s functions. The spin current has two possible contributions. One is associated with angular momentum transfer due to spin-polarized charge current crossing the junction. If there are magnetic moments on both sides of the tunnel junction, due to spin accumulation or ferromagnetic ordering, then there is a second contribution related to the exchange coupling between the moments.     

Spin-polarized tunneling in a ferromagnetic graphene junction: Interplay between the exchange interaction and the orbital effect of the magnetic field

The influence of magnetic vector potential barrier (MVPB) on the spin-polarized transport of massless Dirac particles in ferromagnetic graphene is studied theoretically. The phenomenon of Klein tunneling of relativistic particles across a rectangular potential barrier prevents any of the massless fermions from being confined but they can be electrically confined by quantum dots with integrable dynamics (Bardarson et al., 2009) [36]. Utilization of only the in-plane exchange splitting in the ferromagnetic graphene cannot produce 100% spin polarization. This tunneling can be confined using the magnetic vector potential barrier, which leads to high degree of spin polarization. By combining the orbital effect and the Zeeman interaction in graphene junction, it is found that the junction mimics behavior of half-metallic tunneling junction, in which it acts as a metal to particles of one spin orientation but as an insulator or a semiconductor to those of the opposite orientation. The idea of the half-metallic tunneling junction can provide a source of ∼100% spin-polarized current, which is potentially very useful. Adjustment of the position of the Fermi level in ferromagnetic layer by placing a gate voltage on top of the ferromagnetic layer shows that reverse of the orientation of the completely spin-polarized current passing through the junction is controlled by adjusting the gate voltage. These interesting characteristics should lead to a practical gate voltage controlled spin filtering and spin-polarized switching devices as a perfect spin-polarized electron source for graphene-based spintronics.     

Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions

We investigated spin-dependent tunneling conductance properties in fully epitaxial double MgO barrier magnetic tunnel junctions with layered nanoscale Fe islands as a middle layer. Clear oscillations of the tunneling conductance were observed as a function of the bias voltage. The oscillation, which depends on the middle layer thickness and the magnetization configuration, is interpreted by the modulation of tunneling conductance due to the spin-polarized quantum well states created in the middle Fe layer. This first observation of the quantum size effect in the fully epitaxial double barrier magnetic tunnel junction indicates great potential for the development of the spin-dependent resonant tunneling effect in coherent tunneling regime.     

Current hysteresis in magnetic tunnel junctions

A current hysteresis is detected in magnetic tunnel junctions of the ferromagnetic metal-nonmagnetic insulator-ferromagnetic metal type. The hysteresis is manifested in the formation of loops on the curves describing the dependence of the current through the junction on the applied voltage, as well as in the nonreproducibility of this dependence. This effect is caused by the influence of the spin-polarized current on the magnetic state of metallic layers: the current leads to a rearrangement of the domain structure under these conditions.     

Effect of current on magnetization oscillations in the ferromagnet-antiferromagnet junction

The effect of spin-polarized current on the steady-state magnetization and oscillations of antiferromagnet magnetization in a ferromagnetic-antiferromagnetic magnetic junction is analyzed. The macrospin approximation is generalized to describe antiferromagnets. The canted configuration of the antiferromagnet and the resultant magnetic moment are produced by the application of an external magnetic field. The resonance frequency, damping, and threshold current density corresponding to the emergence of instability are calculated. The possibility of generating weakly damped magnetization oscillations in the terahertz range is demonstrated. The effect of fluctuations on the canted configuration of the antiferromagnet is discussed.     

Spatially modulated tunnel magnetoresistance on the nanoscale

We investigate the local tunnel magnetoresistance (TMR) effect within a single Co nanoisland using spin-polarized scanning tunneling microscopy. We observe a clear spatial modulation of the TMR ratio with an amplitude of ~20% and a spacing of ~1.3 nm between maxima and minima around the Fermi level. This result can be ascribed to a spatially modulated spin polarization within the Co island due to spin-dependent quantum interference. Our combined experimental and theoretical study reveals that spin-dependent electron confinement affects all transport properties such as differential conductance, conductance, and TMR. We demonstrate that the TMR within a nanostructured magnetic tunnel junction can be controlled on a length scale of 1 nm through spin-dependent quantum interference.     

Analysis of effective spin-polarized transport through a ZnO based magnetic p–n junction at room temperature

ZnO based magnetic semiconductors (MSs) are prominent candidates for the spintronic devices because of their high Curie temperatures and low conductance mismatches. In this paper the spin-polarized transport in MS/nonmagnetic semiconductor (NMS) p–n junction is investigated. A model is established based on semiconductor drift–diffusion theory and continuity equation. Boundary conditions are obtained from the quasi-chemical potential (QCP) relations at the junction interface. For a ZnO based magnetic p–n junction, we calculate the distributions of carrier/spin density and spin polarization at room temperature. It is demonstrated that by choosing proper parameters, effective spin-polarized injection from ZnO based MS into ZnO can be achieved at room temperature without external spin-polarized injection (ESPI) or large bias.     

Magnetic tunnel structures: Transport properties controlled by bias,magnetic field,and microwave and optical radiation

Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect.     

Spin-filtering junctions with double ferroelectric barriers

An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction.     

Spin-polarized current generated by magneto-electrical gating

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa.     

Magnetically driven high-frequency rectification in a cooperative system of magnetic tunnel junctions: Frequency dependence

The effect of magnetically driven high-frequency rectification in a polycrystalline La_0.7Ca_0.3MnO₃ manganite has been measured at different frequencies of microwave radiation. The magnetic field dependence of a rectified voltage has a broad peak resembling an absorption line, whose shape and position are determined by the radiation frequency. The rectification effect in a polycrystalline manganite sample is related to a ramified network of magnetic tunnel junctions, which is formed by ferromagnetic conducting grains with insulator boundaries. The results of measurements are consistent with a model for the magneto-dependent rectification effect based on the interplay between a spin-polarized current through the tunnel junctions and magnetic resonance induced in the grains forming the junctions.     

Thermopower, figure of merit and spin-transfer torque induced by the temperature gradient in planar tunnel junctions

The thermopower, charge and thermal conductance, and figure of merit as well as the spin-transfer torque generated by the temperature gradient in the planar tunnel junction consisting of ferromagnetic layers and the nonmagnetic tunnel barrier are investigated in the free-electron-like spin-polarized one-band model. In particular, the influence of the parameters of the junction as well as the influence of the relative orientation of magnetic moments on the studied phenomena are investigated. The thermopower can be related to the voltage drop generated by the temperature difference between electrodes under the condition that the charge current vanishes. It depends on the magnetic configuration of the junction. In junctions with high barriers the thermopower is maximal in the antiparallel configuration and it can be enhanced in junctions with strong spin-splitting of the electron bands. The component of the torque studied in the present paper is oriented in the plane formed by magnetic moments and it appears in the absence of the bias voltage. Its magnitude is insensitive to the sign of the temperature difference in contrast to the bias-induced in-plane torque which strongly depends on the polarization of the bias. The studied torque is usually smaller than the torque generated by the bias: however, it can be significant in junctions with low barriers.     

Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars

Using thin film pillars approximately 100 nm in diameter, containing two Co layers of different thicknesses separated by a Cu spacer, we examine the process by which the scattering from the ferromagnetic layers of spin-polarized currents flowing perpendicular to the layers causes controlled reversal of the moment direction in the thin Co layer. The well-defined geometry permits a quantitative analysis of this spin-transfer effect, allowing tests of competing theories for the mechanism and also new insight concerning magnetic damping. When large magnetic fields are applied, the spin-polarized current no longer fully reverses the magnetic moment, but instead stimulates spin-wave excitations.     

Nonlinear spin current and magnetoresistance of molecular tunnel junctions

We report on a theoretical study of spin-polarized quantum transport through a Ni-bezenedithiol(BDT)-Ni molecular magnetic tunnel junction (MTJ). Our study is based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism, so that microscopic details of the molecular MTJ are taken into account from first principles. A magnetoresistance ratio of approximately 27% is found for the Ni-BDT-Ni MTJ which declines toward zero as bias voltage is increased. The spin currents are nonlinear functions of bias voltage, even changing sign at certain voltages due to specific features of the coupling between molecular states and magnetic leads.     

Spin field emission and state switching in a magnetic tunnel junction

The phenomena of spin tunneling and spin torque transfer between magnetic layers of a tunnel spin-valve setup under weak and strong field emissions of spin-polarized electrons are considered. Bifurcational features of changes in the macrospin states under the impact of a tunnel current are discussed for varying directions of the spin-polarization vector.     

Motion of domain walls under the action of spin-polarized current in a magnetic junction

The effect of spin-polarized current on a domain structure in a magnetic junction consisting of two ferromagnetic metallic layers separated by an ultrathin nonmagnetic layer is studied within a phenomenological theory. The magnetization of one ferromagnetic layer (layer 1) is assumed to be fixed, while that of the other ferromagnetic layer (layer 2) can be freely oriented both parallel and antiparallel to the magnetization of layer 1. Layer 2 can be split into domains. Charge transfer from layer 1 to layer 2 is not attended with spin scattering by the interface but results in spin injection. Due to s-d exchange interaction, injected spins tend to orient the magnetization in the domains parallel to layer 1. This causes the domain walls to move and “favorable” domains to grow. The average magnetization current injected into layer 2 and its contribution to the s-d exchange energy are found by solving the continuity equation for carriers with spins pointing up and down. From the minimum condition for the total magnetic energy of the junction, the parameters of the periodic domain structure in layer 2 are determined as functions of current through the junction and magnetic field. It is shown that the spin-polarized current can magnetize layer 2 up to saturation even in the absence of an external magnetic field. The associated current densities are on the order of 10⁵ A/cm². In the presence of the field, its effect can be compensated by such a high current. Current-induced magnetization reversal in the layer is also possible.     

Room-temperature tunnel magnetoresistance and spin-polarized tunneling through an organic semiconductor barrier

Electron spin-polarized tunneling is observed through an ultrathin layer of the molecular organic semiconductor tris(8-hydroxyquinolinato)aluminum (Alq3). Significant tunnel magnetoresistance (TMR) was measured in a Co/Al2O3/Alq3/NiFe magnetic tunnel junction at room temperature, which increased when cooled to low temperatures. Tunneling characteristics, such as the current-voltage behavior and temperature and bias dependence of the TMR, show the good quality of the organic tunnel barrier. Spin polarization (P) of the tunnel current through the Alq3 layer, directly measured using superconducting Al as the spin detector, shows that minimizing formation of an interfacial dipole layer between the metal electrode and organic barrier significantly improves spin transport.     

Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

We investigate the electronic transport in a silicene-based ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal tunnel junction. The results show that the valley and spin transports are strongly dependent on local application of a vertical electric field and effective magnetization configurations of the ferromagnetic layers. In particular, it is found that the fully valley and spin polarized currents can be realized by tuning the external electric field. Furthermore, we also demonstrate that the tunneling magnetoresistance ratio in such a full magnetic junction of silicene is very sensitive to the electric field modulation.