Enhancement of the anomalous Hall effect and spin glass behavior in the bilayered manganite La2−2xSr1+2xMn2O7

The Hall resistivity and magnetization have been investigated in the ferromagnetic state of the bilayered manganite La_2−2xSr_1+2xMn₂O₇ (x=0.36). The Hall resistivity shows an increase in both the ordinary and anomalous Hall coefficients at low temperatures below 50 K, a region in which experimental evidence for the spin glass state has been found in a low magnetic field of 1 mT. The origin of the anomalous behavior of the Hall resistivity relevant to magnetic states may lie in the intrinsic microscopic inhomogeneity in a quasi-two-dimensional electron system.     

Residual surface stress measurements in YBa2Cu3Ox superconductors

XRD and residual surface stress (sin² ψ) measurements were carried out on YBa₂Cu₃O_x superconductors with varying oxygen stoichiometry (6.3 < x < 7.0). Slopes of the surface strain versus sin² ψ were plotted against oxygen content for certain reflections. Compressional surface stress has been found along the c-axis, while a tensile surface stress has been observed along the ab-plane. Both surface stresses were found to vary slightly with oxygen content. These findings qualitatively agree with a very small hydrostatic pressure effect on T_c for fully oxygenated YBa₂Cu₃O_x (x = 7) compared to oxygen deficient material at the surface.     

Magnetic properties and magnetic structures of Sr3−xCaxRu2O7

We have measured magnetization curves and powder neutron diffraction of double-layered Ruddlesden-Popper type ruthenate Sr_3−xCa_xRu₂O₇ (x=1.5, 2.0 and 3.0). The field dependence of the magnetization revealed that the transition field of metamagnetic transition along the b-axis shifted to lower fields and that the transition became broad with increasing Sr content. The slope of the magnetization curve also increased with increasing Sr content below the metamagnetic transition. These results indicate that an itinerant component is partly introduced by the Sr substitution. From the magnetic reflection, on cooling below T_N, an additional reflection was observed at (0 0 1) for each x, and the amplitude increased with decreasing temperature. The observed diffraction patterns are very similar to those of Ca₃Ru₂O₇. We conclude that the magnetic structure of the antiferromagnetic ordered phase is basically the same structure with that of Ca₃Ru₂O₇.     

Kondo lattice behaviour in CePt2(Si1−xSnx)2 alloys

Measurements of electrical resistivity are presented for polycrystalline alloys in the CePt₂(Si_1−xSn_x)₂ system. Results of X-ray diffraction indicate that the tetragonal region of the CePt₂(Si_1−xSn_x)₂ alloy system that is amenable for study only extends up to x=0.3. The resistivity maximum characteristic of a Kondo lattice is observed at a temperature T_max=63 K for the parent compound CePt₂Si₂ and shifts to lower temperatures with increase in Sn content. The compressible Kondo lattice model is applied to describe the results of T_max in terms of the on-site Kondo exchange interaction J and the electron density of states at the Fermi level N(E_F). A value of |JN(E_F)|=0.060±0.009 for the parent compound is obtained from the experimental results.     

Chemical pressure effect in CeFeAs1−xPxO0.95F0.05

We investigate the chemical pressure effect due to P doping in the CeFeAs_1−xP_xO_0.95F_0.05(0≤x≤0.4) system. The compound CeFeAsO_0.95F_0.05 without P doping is on the boundary between antiferromagnet (AFM) and superconductor. The AFM order of Ce³⁺ local moments causes a significant reentrance behavior in both resistivity and magnetic susceptibility. Upon P doping, T_c increases and reaches a maximum of 21.3 K at x=0.15, and then it is suppressed to lower temperatures. Meanwhile, the AFM order of Ce³⁺ ions remains nearly the same in the whole doping range (0≤x≤0.4). Our experimental results suggest a competition between superconductivity and Kondo effect in the Ce 1111 system.     

Structure and superconductivity of Mg1−xPbxB2

A series of polycrystalline samples of Mg_1−xPb_xB₂ (0≤x≤0.10) were prepared by a solid state reaction method and their structure, superconducting transition temperature and transport properties were investigated by means of X-ray diffraction (XRD) and resistivity measurements. Mg_1−xPb_xB₂ compounds were shown to adopt an isostructural AlB2-type hexagonal structure in a relatively small range of lead concentration, x≤0.01. The crystalline lattice constants were evaluated and were found to exhibit slight length compression as x increases. The superconducting transition temperature (T_c) steadily decreases with Pb doping. It is suggested that the mechanism of superconductivity reduction by lead doping can be attributed to the chemical pressure effect.     

Enhanced thermoelectric properties of bismuth intercalated compounds BixTiS2

The thermoelectric properties of Bi intercalated compounds Bi_xTiS₂ have been investigated at the temperatures from 5 to 310 K. The results indicate that Bi intercalation into TiS₂ leads to substantial decrease of its electrical resistivity (one order low for x=0.05 and two orders low for x=0.15, 0.25 at 300 K) and lattice thermal conductivity (22, 115 and 158% low at 300 K for x=0.05, 0.15 and 0.25, respectively). Specially, the figure of merit, ZT, of lightly intercalated compound Bi_0.05TiS₂ has been improved at all temperatures investigated, and specifically reaches 0.03 at 300 K, which is about twice as large as that of TiS₂.     

Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N2 and O2 + N2 ambients

We have designed a promising contact scheme to p-GaN. Au/NiO_x layers with a low concentration of O in NiO_x are deposited on p-GaN by reactive dc magnetron sputtering and annealed in N₂ and in a mixture of O₂ + N₂ to produce low resistivity ohmic contacts. Annealing has been studied of NiO_x layers with various contents of oxygen upon the electrical properties of Au/NiO_x/p-GaN. It has been found that the Au/NiO_x/p-GaN structure with a low content of oxygen in NiO_x layer provides a low resistivity ohmic contact even after subsequent annealing in N₂ or O₂ + N₂ ambient at 500 °C for 2 min.Auger depth profiles and transmission electron microscopy (TEM) micrographs reveal that while annealing in O₂ + N₂ ambient results in reconstruction of the initial deposited Au/NiO_x/p-GaN contact structure into a Au/p-NiO/p-GaN structure, annealing in N₂ brings about reconstruction into Au/p-NiO/p-GaN and Ni/p-NiO/p-GaN structures. Hence, in both cases, after annealing in N₂ as well as in O₂ + N₂ ambient, the ohmic properties of the contacts are determined by creation of a thin oxide layer (p-NiO) on the metal/p-GaN interface. Higher contact resistivities in the samples annealed in O₂ + N₂ ambient are most likely caused by a smaller effective area of the contact due to creation of voids.     

Electrical properties and spin fluctuations studies of Y(Co1−xNix)2 compounds

Synthesis by arc melting, the structural and the electric properties of Y(Co_1−xNi_x)₂ alloys were studied by X-ray diffraction (XRD) and four probe dc electrical measurements. XRD analysis (300 K) shows that all samples crystallize in a cubic MgCu₂-type structure. The lattice parameters linearly decrease with Ni content. Electrical resistivity for the Y(Co_1−xNi_x)₂ intermetallic series was measured in a temperature range of 15-1100 K. The parameters involved in the dependence of resistivity on temperature were determined. Residual, phonon and spin fluctuations resistivity were separated from electrical resistivity using both the Matthiesen formula and the Bloch-Gruneisen formula. The spin fluctuations resistivity of the Y(Co_1−xNi_x)₂ series are compared to the mean square amplitudes of spin fluctuations previously calculated by the Linear Muffin Tin Orbital-Tight Binding Approach method for these series in the literature. The contribution of spin fluctuations to total resistivity ρ_sf is proportional to T² at low temperatures. The proportionality parameter strongly reduces across the Y(Co_1−xNi_x)₂ series.     

ESR investigation of the spin dynamics in (Gd1−xYx)2PdSi3

We report electron-spin resonance (ESR) measurements in polycrystalline samples of (Gd_1−xY_x)₂PdSi₃. We observe the onset of a broadening of the linewidth and of a decrease of the resonance field at approximately twice the Néel temperature in the paramagnetic state. This characteristic temperature coincides with the electrical resistivity minimum. The high-temperature behavior of the linewidth is governed by a strong bottleneck effect.     

Doping and temperature dependence of inversion symmetry breaking in La2−xSrxCuO4

The doping dependence of the Raman spectra of high quality La_2−xSr_xCu^16,18O₄ polycrystalline compounds has been investigated at low temperatures. It is shown that symmetry forbidden bands peaked at ∼150 cm⁻¹, ∼280 cm⁻¹, and ∼370 cm⁻¹ are activated in the (xx/yy) polarization Raman spectra due to the local breaking of the inversion symmetry mainly at low temperatures and for doping concentrations for which the compound is superconducting. The apparent A₁-character of the activated modes in the symmetry reduced phase indicates a reduction from the D_2h to C_2v or D₂ crystal symmetries, which associates the observed modes to specific IR-active phonons with eigenvectors mainly along the c-axis. The temperature and doping dependence of this inversion symmetry breaking and the superconducting transition temperature are very similar, though the symmetry reduction occurs at significantly higher temperatures.     

Effect of Si/Ge ratio on resistivity and thermopower in Gd5SixGe4−x magnetocaloric compounds

The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd₅Si_xGe_4−x compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd₅(Si,Ge)₄-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of −8 μV/K was obtained at the magneto-structural transition for the x=2 compound.     

Phonon dynamics of hexagonal Y Mn1−xFexO3

Phonon dynamics was investigated on Y Mn_1−xFe_xO₃(0≤x≤0.20) hexagonal manganite polycrystals. Phonon modes were properly assigned using results obtained on Y MnO₃ single crystal, by mixing the ab plane and the c axis optical responses. Upon increasing the Fe content, most of the phonon mode frequencies do not vary drastically. However, some modes involving Y and O atom displacements along the c axis are affected by doping. Indeed, a redshift of their transverse optical frequency was interpreted as an elongation of Y-O distance along the c-axis, resulting in a change in yttrium coordination.     

Anomalous magnetism in three-dimensional orthogonal dimer lattice system: (Ba1−xSrx)2Ru3O9 (x≈0.35)

The magnetic and transport properties of a new cubic KSbO₃-type ruthenate, (Ba_1−xSr_x)₂Ru₃O₉ (x≈0.35), have been investigated. The crystal structure has a singular geometry in which ruthenium atoms form an ideal three-dimensional orthogonal dimer lattice. The magnetic susceptibility is Pauli-paramagnetic but exhibits an anomalous temperature dependence reminiscent of a gap-like behavior. The resistivity exhibits a metallic behavior, except for a rise at low temperature.     

Electrical resistivity of narrow-band ferromagnetic Fe1−xCoxS2

The electrical resistivity of metallic ferromagnet Fe_1−xCo_xS₂ shows an anomalous temperature dependence below Curie point. As the temperature lowers, the resistivity increases for x < 0.9, while it decreases for x > 0.9 with a hump.     

Diffuse phase transition in Ba5NdTi3−xZrxNb7O30 ferroelectric ceramics

Polycrystalline samples of Ba₅NdTi_3−xZr_xNb₇O₃₀ (x=0, 1, 2, 3) compounds of the tungsten-bronze (TB) structural family were prepared by a high-temperature solid-state reaction technique. X-ray study of the compounds shows the formation of single phase compounds in the orthorhombic crystal system at room temperature. Detailed studies of the dielectric properties (dielectric constant and loss tangent) as a function of temperature (−50 to 350°C) at four different frequencies, 1, 10, 100 and 1000 kHz show relaxor behavior and diffuse phase transition of the compounds. Study of temperature dependence of resistivity shows that these compounds have negative temperature coefficients of resistance (NTCR).     

Thermoelectric properties of the Bi2−xYxRu2O7 (x=0-2) pyrochlores

Electrical conductivity and Seebeck coefficient for the Bi_2−xY_xRu₂O₇ pyrochlores with x=0.0,0.5,1.0,1.5,2.0 were measured in the temperature range of 473-1073 K in air. With increasing Bi content, the temperature dependence of the electrical conductivity changed from semiconducting to metallic. The signs of the Seebeck coefficient were positive in the measured temperature range for all the samples, indicating that the major carriers were holes. The temperature dependence of the Seebeck coefficient for the Y₂Ru₂O₇ indicated the thermal activation-type behavior of the holes, while that for the Bi_2−xY_xRu₂O₇ with x=0.0-1.5 indicated the itinerant behavior of the holes. The change in the conduction behavior from semiconductor to metal with increasing Bi content is consistent with the increase in the overlap between the Ru4d t_2g and O2p orbitals, but the mixing of Bi6s, 6p states at E_F may not be ruled out. The thermoelectric power factors for the Bi_2−xY_xRu₂O₇ with x=1.5 and 2.0 were lower than 10⁻⁵ W m⁻¹ K⁻² and those with x=0.0,0.5,1.0 were around 1-3×10⁻⁵ W m⁻¹ K⁻².     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa₂Cu₃O_7−x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa₂Cu₃O_7−x thin film-PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa₂Cu₃O_7−x films in the nano-scale vicinity of the junction interface under applied electrical fields.     

A neutron powder diffraction study of the helimagnetic structure of TlCo2Se2−xSx

The magnetic layer structure of TlCo₂Se_2−xS_x has been thoroughly re-investigated with neutron powder diffraction. The cobalt magnetic moments are ferromagnetically arranged within the layers, but the interlayer coupling differs profoundly with varying composition (x): the spins in TlCo₂Se₂ form a helix along the c-axis with a turning-angle of ∼119° at 1.4 K. This kind of helical structure prevails for 0≤x≤1.5 with a gradual decrease of the angle with increasing sulphur content, down to 34°, showing an almost linear relationship with the interlayer distance of Co-Co. For x≥1.75 the interlayer coupling changes to ferromagnetic. Unexpectedly, two helices were found to coexist at x=0.5 and x=1.0. The interaction between adjacent cobalt layers is there characterized by an incommensurate angle (106°, resp., 73°) together with a commensurate angle of 90°. The magnetic structures have been refined as two magnetic phases, each having a characteristic wave vector. A tentative model where the symmetry of the structure and the interlayer distance compete is considered for explaining the simultaneous occurrence of the two kinds of diffraction profile satellites.