Electronic structure of a thermoelectric material: CsBi4Te6

We have calculated the electronic structure of CsBi₄Te₆ by means of first-principles self-consistent total-energy calculations within the local-density approximation using the full-potential linear-muffin-tin-orbital method. From our calculated electronic structure we have calculated the frequency dependent dielectric function. Our calculations shows that CsBi₄Te₆ a semiconductor with a band gap of 0.3 eV. The calculated dielectric function is very anisotropic. Our calculated density of state support the recent experiment of Chung et al. [Science 287 (2000) 1024] that CsBi₄Te₆ is a high performance thermoelectric material for low temperature applications.     

Electronic structure of BaTiO3 using resonant X-ray emission spectroscopy at the Ba-L3 and Ti-K absorption edges

We have studied the electronic properties of the ferroelectric barium titanate BaTiO₃ using two complementary bulk-sensitive spectroscopic probes, resonant X-ray emission spectroscopy (RXES) and X-ray absorption spectroscopy in the partial fluorescence mode (PFY-XAS) at the Ba-L₃ and Ti-K absorption edges. Contrary to a previous study, we found no fine structure in the pre-edge area of the PFY-XAS spectrum at the Ba-L₃ edge, and no temperature-induced spectral change was observed between room temperature and 150 °C. This result is not supportive of the possible presence of the displacement around Ba²⁺ at the Curie temperature. RXES spectra were measured at the Ti-K edge for BaTiO₃, along with SrTiO₃ and La-doped metallic SrTiO₃. The photon energy of the emission peak is found to be nearly constant throughout the absorption edge for all three compounds. We deduce the Ti 3d states to have a delocalized character, in contrast with the Ba 5d states, a property which is consistent with the proposed scenario of the formation of electric dipoles in BaTiO₃.     

Electronic structure and transport of Ca3Co2O6 and Ca3CoNiO6

We have calculated the band structure of Ca₃Co₂O₆ and Ca₃CoNiO₆ by using the self-consistent full-potential linearized augmented plane-wave method within density function theory and the generalized gradient approximation for the exchange and correlation potential. The spin-orbit interaction is incorporated in the calculations using a second variational procedure. The relation of these band structure calculations to thermoelectric transport is discussed. The results illustrate that transport is highly anisotropic with much larger mobility in the a-b plane than out of the a-b plane, and the introduction of Ni in Ca₃Co₂O₆ alters its electronic structure and its thermoelectric transport properties.     

Electronic structure studies of the spinel CoFe2O4 by X-ray photoelectron spectroscopy

The spinel CoFe₂O₄ has been synthesized by combustion reaction technique. X-ray photoelectron spectroscopy shows that samples are near-stoichiometric, and that the specimen surface both in the powder and bulk sample is most typically represented by the formula (Co_0.4Fe_0.6)[Co_0.6Fe_1.4]O₄, where cations in parentheses occupy tetrahedral sites and those within square brackets in octahedral sites. The results demonstrate that most of the iron ions are trivalent, but some Fe²⁺ may be present in the powder sample. The Co 2p_3/2 peak in powder sample composed three peaks with relative intensity of 45%, 40% and 15%, attributes to Co²⁺ in octahedral sites, tetrahedral sites and Co³⁺ in octahedral sites. The O 1s spectrum of the bulk sample is composed of two peaks: the main lattice peak at 529.90 eV, and a component at 531.53 eV, which is believed to be intrinsic to the sample surface. However, the vanishing of the O 1s shoulder peak of the powder specimen shows significant signs of decomposition.     

First-principles calculations of electronic, optical and elastic properties of ZnAl2S4 and ZnGa2O4

The optimized crystal structures, band structures, partial and total densities of states (DOS), dielectric functions, refractive indexes and elastic constants for ZnAl₂S₄ and ZnGa₂O₄ were calculated using the CASTEP module of Materials Studio package. Pressure effects were modeled by performing these calculations for different values of external hydrostatic pressure up to 50 GPa. Obtained dependencies of the unit cell volume on pressure were fitted by the Murnaghan equation of state, and the relative changes of different chemical bond lengths were approximated by quadratic functions of pressure. Variations of applied pressure were shown to produce considerable re-distribution of the electron densities around ions in both crystals, which is evidenced in different trends for the effective Mulliken charges of the constituting ions and changes of contour plots of the charge densities. The longitudinal and transverse sound velocities and Debye temperatures for both compounds were also estimated using the calculated elastic constants.     

Band structure and optical spectra of RbNH4SO4 crystals

First-principal density functional theory (DFT) calculations of the band structure, density of states and dielectric functions ε(E) of the rubidium ammonium sulfate (RAS) crystal, RbNH₄SO₄, in the orthorhombic phase Pnma have been carried out using the CASTEP code. Valence electron bands of the crystal are flat in k-space, that responds to the relatively great effective mass, m*?5m_e. The top valence band of the crystal has been found to be the most flat, what might be an evidence of a weak chemical bonding of the sulfate complexes (SO₄) in the crystal and therefore for the predisposition to structural instability and phase transitions. The characteristic feature is that two top valence bands are originated almost entirely from p-electrons of oxygen. The bottom part of the conduction band is formed mainly by the hydrogen atoms, the higher parts of this band—by a mixed set of chemical elements and orbital moments. The calculated refractive indices in the range of crystal's transparency agree satisfactorily with the experiment considering that the infrared absorption is not taken into account in calculations.     

An indirect probe of the possible half-metallic nature of LiFePO4 using resonant inelastic X-ray scattering

The Fe site in LiFePO₄ was probed resonantly and non-resonantly at the L_2,3 edge. A suspected half-metal, the experimental results were compared to band structure calculations to understand the electronic structure. We found that the probability of promoting an electron to the unoccupied band through simple photoexcitation or through scattering is highly influenced by magnon-exciton coupling. We have also found evidence that the correlation self-energy has a momentum-dependant component, causing spectral renormalization of the Fe 3d PDOS. Our experimental results are consistent with the predicted band, structure of LiFePO₄.     

Electronic structure of CeF3 and TbF3 by valence-band XPS and theory

Electronic structures of the rare earth trifluorides CeF₃ () and TbF₃ (Pnma) were examined by high-resolution valence-band X-ray photoelectron spectroscopy (VB-XPS) and all-electron periodic-crystal DFT theory including the spin-polarization (SP) combined with spin-orbit (SO) coupling using a second-variational treatment. Calculations using the Perdew-Burke-Ernzerhof (PBE) functional and the LDA+U method were carried out and compared. The results show that a complete analysis does require a full DFT-SP-SO treatment to obtain a quantitative account for the observed VB-XPS spectra, with an additional insight of the theory with regard to the nature of the topmost orbitals, and the bonding-antibonding character of orbitals within the VB and sub-VB levels. The band structure at the bottom of the conduction band (BCB) shows a strong dispersion in TbF₃ but not in CeF₃, predicting photoconductivity in TbF₃.     

Electronic structure reconstruction of CaFe2As2 in the spin density wave state

The electronic structure of CaFe₂As₂, a parent compound of iron-based superconductors, is studied with high-resolution angle-resolved photoemission spectroscopy. The electronic structure of CaFe₂As₂ in the paramagnetic state is consistent with that of density-functional theory calculations. We show that the electronic structure of this compound is significantly reconstructed when entering the spin density wave state. We could resolve two hole-like pockets and four electron-like pockets around the (0, 0) point, and one electron-like pocket surrounded with a pair of electron- and hole-like pockets around the (π, π) point in the spin density wave state. Therefore, the complicated Fermi surface topology and electronic structure near Fermi surface of CaFe₂As₂ illustrate that there exists unconventional electronic reconstruction in the spin density wave state, which cannot be explained by the band folding and Fermi surface nesting pictures.     

Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

Undoped and p- and n-doped AgSbX₂ (X=Se and Te) materials were synthesized by direct fusion technique. The structural properties were investigated by X-ray diffraction and SEM microscopy. The electrical conductivity, thermal conductivity and Seebeck coefficient have been measured as a function of temperature in the range from 300 to 600 K.To enlighten electron transport behaviours observed in AgSbSe₂ and AgSbTe₂ compounds, electronic structure calculations have been performed by the Korringa-Kohn-Rostoker method as well as KKR with coherent potential approximation (KKR-CPA) for ordered (hypothetical AgX and SbX as well as AgSbX₂ approximates) and disordered systems (Ag_1−xSb_xX), respectively. The calculated density of states in the considered structural cases shows apparent tendencies to opening the energy gap near the Fermi level for the stoichiometric AgSbX₂ compositions, but a small overlap between valence and conduction bands is still present. Such electronic structure behaviour well agrees with the semimetallic properties of the analyzed samples.     

Defect properties of CuInSe2 and CuGaSe2

Using first-principles electronic structure theory, we have calculated defect formation energies and defect transition levels in CuInSe₂ and CuGaSe₂. We show that (i) it is easy to form Cu vacancies in CuInSe₂, and (ii) it is also relatively easy to form cation antisite defects (e.g. In_Cu) for this ternary compound. Consequently, defect pairs such as (2V_Cu+In_Cu) have a remarkably low formation enthalpy. As a result, the formation of a series of Cu-poor compounds (CPCs) such as CuIn₅Se₈ and CuIn₃Se₅, is explained as a repeat of (2V_Cu+In_Cu) pairs in CuInSe₂. The very efficient p-type self-doping ability of CuInSe₂ is explained by the easy formation of the shallow Cu vacancies. The electrically benign character of the natural defect in CuInSe₂ is explained in terms of an electronic passivation of the by . For CuGaSe₂, we find that (i) the native acceptor formation energies and transition energy levels are similar to that in CuInSe₂, but the donor formation energy is larger in CuGaSe₂. (ii) The Ga_Cu donor level in CuGaSe₂ is deeper than In_Cu donor level in CuInSe₂, therefore, Ga_Cu behaves as an electron trap in CuGaSe₂, even when it is passivated by V_Cu. We have also calculated the band alignment between the CPCs and CuInSe₂, showing that it could have significant effect on the solar cell performance.     

Fermi surfaces and quasi-particle band dispersions of the iron pnictides superconductor KFe2As2 observed by angle-resolved photoemission spectroscopy

We have performed an angle-resolved photoemission study of the iron pnictide superconductor KFe₂As₂ with . Most of the observed Fermi surfaces show almost two-dimensional shapes, while one of the quasi-particle bands near the Fermi level has a strong dispersion along the k_z direction, consistent with the result of a band-structure calculation. However, hole Fermi surfaces α and ζ are smaller than those predicted by the calculation while other Fermi surfaces are larger. These observations are consistent with the result of a de Haas-van Alphen study and a theoretical prediction on inter-band scattering, possibly indicating many body effects on the electronic structure.     

Electronic excitations in hole-doped La1−xSrxMnO3 studied by resonant inelastic X-ray scattering

We report a resonant inelastic X-ray scattering (RIXS) study on perovskite manganese oxides La_1−xSr_xMnO₃ (x=0, 0.2, and 0.4) at Mn K-absorption edge. Hole-doping effect on the electronic excitations in the strongly correlated electron systems is elucidated by comparing with undoped LaMnO₃. The scattering spectra of metallic La_0.6Sr_0.4MnO₃ show that a salient peak appears in low energies indicating the persistence of the Mott gap. At the same time, the energy gap is partly filled by doping holes and the spectral weight shifts toward lower energies. Though the peak position of the excitations shows weak dispersion in momentum dependence, RIXS intensity changes as a function of the scattering angle (2θ), which is related to the anisotropy. Furthermore, anisotropic temperature dependence is observed in La_0.8Sr_0.2MnO₃ which shows a metal-insulator transition associated with a ferromagnetic transition. We consider that the anisotropy in the RIXS spectra is possibly attributed to the correlation of the orbital degrees of freedom. The anisotropy is large in LaMnO₃ with long-range orbital order, while it is small but finite in hole-doped La_1−xSr_xMnO₃ which indicates persistence of short-range orbital correlation.     

High-temperature crystal structure and electronic properties of cesium niobate Cs2Nb4O11

The antiferroelectric material Cs₂Nb₄O₁₁ transforms at 165 °C from a low-temperature, antiferroelectric phase in space group Pnna to a high-temperature, paraelectric phase in space group Imma; the latter structure has been determined by single-crystal X-ray diffraction. The high-temperature lattice is comprised of niobium-centered tetrahedra and octahedra connected through shared vertices and edges; cesium atoms occupy channels afforded by the three-dimensional polyhedral network. Calculated band structures for both phases predict a bandgap of 3.1-3.2 eV, which is similar to that found experimentally through photoluminescence. The calculated band structure is also conducive to its observed photocatalytic properties.     

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

Ab initio band structure calculations were performed for the low-temperature modifications of the silver chalcogenides β-Ag₂Se, β-Ag₂Te and the ternary compound β-Ag₃AuSe₂ by the local spherical wave (LSW) method. Coordinates of the atoms of β-Ag₂Se and β-Ag₃AuSe₂ were obtained from refinements using X-ray powder data. The structures are characterized by three, four and five coordinations of silver by the chalcogen, a linear coordination of gold by Se, and by metal-metal distances only slightly larger than in the metals. The band structure calculations show that β-Ag₃AuSe₂ is a semiconductor, while β-Ag₂Se and β-Ag₂Te are semimetals with an overlap of about 0.1-0.2 eV. The Ag 4d and Au 5d states are strongly hybridized with the chalcogen p states all over the valence bands. β-Ag₂Se and β-Ag₂Te have a very low DOS in the energy range from about −0.1 to +0.5 eV. The calculated effective mass β-Ag₂Se is about 0.1-0.3 m_e for electrons and 0.75 m_e for holes, respectively.     

Electronic states of lanthanide in the ternary thiogallate CaGa2S4

The electronic states of lanthanide (Ln) doped CaGa₂S₄ are investigated by the molecular orbital calculations for a spherical cluster of LnCa₈Ga₁₂S₂₄ using the FORTRAN program DVSCAT on the basis of the Discrete Variational method with Xα potentials (DV-Xα). In view of the SCF convergence, the Ln-doped lattice should contract to 85-90% of the mother crystal around the Ln atom for the lightweight lanthanides from Ce to Sm. On the other hand, the lattice contraction is very small for the heavyweight lanthanides, especially for Er, Tm and Yb in contrast to the generally known lanthanide contraction for Ln³⁺ ions. This is probably attributed to the effective charges of Ln atoms calculated here to be less than +1 for all lanthanides contrary to the chemically accepted value of +3. The energy level scheme of 4f and 5d related molecular orbitals is proposed for each Ln substituting Ca in CaGa₂S₄, showing that the optical processes relating to the 5d→4f transition must be complicated especially for the lightweight Ln-doped CaGa₂S₄.     

Nitrogen doping concentration influence on NaNbO3 from first-principle calculations

The nitrogen concentration effects on electronic band structures and photocatalytic performance of N-doped sodium niobate (NaNbO₃) have been investigated by first-principles calculations based on density functional theory (DFT). At lower nitrogen doping levels, some localized N 2p states are formed above the valence band (O 2p) in N-doped NaNbO₃, leading to the reduction of the photon transition energy in comparison to that of undoped compound. Under higher doping levels, the N 2p states mix with O 2p states and then move the top of valence band upward. Two possible mechanisms for increasing visible light absorbance in N-doped NaNbO₃ are tentatively put forward according to the doping levels, which would be of importance in understanding and developing the visible-light-sensitive nitrogen-doped multimetal oxide.     

Electronic and optical properties of CuGaS2: First-principles calculations

Electronic structure and optical properties of CuGaS₂ are calculated using the full potential linearized augmented plane wave plus local orbitals method. The calculated equilibrium lattice is in reasonable agreement with the experimental data. The electronic structures indicate that CuGaS₂ is a semiconductor with a direct bandgap of 0.81802 eV. Furthermore, other experiments and theory also show that this material has a direct bandgap. It is noted that there is quite strong hybridization between Ga 3d and S 3s orbitals, which belongs to the (GaS₂)⁻. The complex dielectric functions are calculated, which are in good agreement with the available experimental results.     

Electronic properties of hydrogen storage materials with photon-in/photon-out soft-X-ray spectroscopy

The applications of resonant soft X-ray emission spectroscopy on a variety of carbon systems have yielded characteristic fingerprints. With high-resolution monochromatized synchrotron radiation excitation, resonant inelastic X-ray scattering has emerged as a new source of information about electronic structure and excitation dynamics. Photon-in/photon-out soft-X-ray spectroscopy is used to study the electronic properties of fundamental materials, nanostructure, and complex hydrides and will offer potential in-depth understanding of chemisorption and/or physisorption mechanisms of hydrogen adsorption/desorption capacity and kinetics.     

Electronic structure calculations of lead chalcogenides PbS, PbSe, PbTe

In this work, we have extended our study of the mechanical properties and the electronic structure of PbTe to include other Pb chalcogenide compounds (PbSe, PbS). The calculations were performed self-consistently using the scalar-relativistic full-potential linearized augmented plane wave method. Both the local density approximation (LDA) and the generalized gradient approximation (GGA) to density-functional theory were applied.The equilibrium lattice constants and the bulk modulus of a number of structures (NaCl, CsCl, ZnS) were calculated as well as the elastic constants for the structures (NaCl, CsCl). The NaCl structure is found to be the most stable one among all the three phases considered. We have found that the GGA predicts the elastic constants in good agreement with experimental data.Both the LDA and GGA were successful in predicting the location of the band gap at the L point of the Brillouin zone but they are inconclusive regarding the value of the band-gap width. To resolve the issue of the gap, we performed Slater-Koster (SK) tight-binding calculations, including the spin-orbit coupling in the SK Hamiltonian. The SK results that are based on our GGA calculations give the best agreement with experiment.Results are reported for the pressure dependence of the energy gap of these compounds in the NaCl structure. The pressure variation of the energy gap indicates a transition to a metallic phase at high pressure. Band structure calculations in the CsCl structure show a metallic state for all compounds. The electronic band structure in the ZnS phase shows an indirect band gap at the W and X point of the Brillouin zone.