First-principles studies on Ti3Si0.5Ge0.5C2 under pressure

The structural, electronic and elastic properties of Ti₃Si_0.5Ge_0.5C₂ have been investigated by using the pseudopotential plane-wave method within the density-functional theory. Our calculated equation of state (EOS) is consistent with the experimental results. The density of states (DOS) indicates that Ti₃Si_xGe_1−xC₂ (x=0, 0.5, 1.0) are metallic, and these compounds have nearly the same electrical conductivity. The elastic constants for Ti₃Si_0.5Ge_0.5C₂ are obtained at zero pressure, which is compared to Ti₃SiC₂ and Ti₃GeC₂. We can conclude that Ti₃Si_0.5Ge_0.5C₂ is brittle in nature by analyzing the ratio between bulk and shear moduli. There appears to be little effect on the electronic and elastic properties with the Ge substitution to Si atoms in Ti₃SiC₂.     

O-vacancy and surface on CeO2: A first-principles study

Atomic and electronic structures of CeO₂ (1 1 1), (1 1 0) and (1 0 0) surfaces are investigated using the first-principles density functional theory taking into account the on-site Coulomb interaction. Both the stoichiometric and O-deficient surfaces are examined in order to clarify the overall features. The CeO₂ (1 1 1) is found to be the most stable surface, followed by the (1 1 0) and (1 0 0) surfaces, consistent with experimental observations. Three surfaces exhibit different features of relaxation. Large relaxations are found at the (1 1 0) and (1 0 0) surfaces, while very small changes are observed at the (1 1 1) surface. It is found that the O-vacancy occurs more readily at the (1 1 0) surface as compared with the (1 1 1) surface. Furthermore, the formation energies of the O-vacancy in the surfaces are lower than that in the bulk. The energetically favorable O-vacancy locates in the second O-atomic layer for the (1 1 1) while at the surface layer for the (1 1 0). The excess electrons left with the removal of the O atom are distributed in the first two layers with certain (a considerable) fraction filling the Ce-4f states.     

Molecular dynamics simulation of phase transition in AgNO3

Structural phase transition in AgNO₃ at high temperature is simulated by molecular dynamics. The simulations are based on the potentials calculated from the Gordon-Kim modified electron-gas formalism extended to molecular ionic crystals. AgNO₃ transforms into rhombohedral structure at high temperature and the phase transition is associated with the rotations of the NO₃ ions and displacements of the NO₃ and Ag ions.     

Half-metallic properties of Ti2FeSi full-Heusler compound

In this study, the electronic structure and magnetic properties of novel half-metallic Ti₂FeSi full-Heusler compound with CuHg₂Ti-type structure were examined by density functional theory (DFT) calculations. The electronic band structures and density of states of the Ti₂FeSi compound show the spin-up electrons are metallic, but the spin-down bands are semiconductor with a gap of 0.45 eV, and the spin-flip gap is of 0.43 eV. Fe atom shows only a small magnetic moment and its magnetic moment is antiparallel to that of Ti atoms, which is indicative of ferrimagnetism in Ti₂FeSi compound. The Ti₂FeSi Heusler compound has a magnetic moment of 2 μ_B at the equilibrium lattice constant a=5.997 Å.     

Electronic properties of the magnetocaloric compound GdAl2: A Compton scattering study

We present Compton profiles of the GdAl₂ compound and its constituents using a 20Ci ¹³⁷Cs Compton spectrometer. The experimental Compton data have been analysed using theoretical data obtained from the spin polarised relativistic Korringa–Kohn–Rostoker (SPR-KKR) method and also the charge transfer on the formation of the compound. Both the experimental and the SPR-KKR theoretical Compton data support a charge transfer from Al→Gd in GdAl₂, which is in accordance with the conclusions drawn from the partial, total and integrated density of states of GdAl₂ and its constituents.     

A first-principles theoretical simulation on the electronic structures and optical absorption properties for O vacancy and Ni impurity in TiO2 photocatalysts

The band structures and optical absorption spectra of O vacancy and Ni ion doped anatase TiO₂ were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). From the calculated results, a phenomenon of “impurity compensation” was found: the lower formation energy for O vacancy than Ni impurity indicated that introducing the intrinsic defect of O vacancy into Ni ion doped TiO₂ sample was very possible; the positive binding energy for the combination of O vacancy and Ni impurity indicated that two defects were apt to bind to each other; While Ni impurity produced the donor levels in the forbidden band of TiO₂, Ni impurity with O vacancy produced the acceptor levels upon which the excitation led to the photogenerated electrons with high energy and transferability. The combination of absorption spectra for O vacancy and Ni impurity with O vacancy models could reproduce the experimental measurement very well.     

Electronic structure and chemical bonding of phosphorus-contained sulfides InPS4, TI3PS4, and Sn2P2S6

The electronic structure of phosphorus-contained sulfides InPS₄, Tl₃PS₄, and Sn₂P₂S₆ was investigated experimentally with X-ray spectroscopy and theoretically by quantum mechanical calculations. The partial densities of electron states calculated with the ab initio multiple scattering FEFF8 code correspond well to their experimental analogues—the X-ray K- and L_2,3-spectra of sulfur and phosphorus. The good agreement between theory and experiment was also achieved for K-absorption spectra of S and P in the investigated sulfides. In spite of the difference in the crystallographic structure of InPS₄, TI₃PS₄, and Sn₂P₂S₆ that influence the form of K-absorption spectra, the electronic structure of their valence bands are rather similar. This is due to the strong interaction of the P and S atoms, which are the nearest neighbors in the compounds studied. The electron densities of p- and s-states of phosphorus are shifted by about 3 eV to lower energies in comparison to the analogous electron states of sulfur. This is connected with the greater electro-negativity of sulfur, and is confirmed by the calculated electron charge transfer from P to S.     

First-principles investigation of the intrinsic defects in Ti3SiC2

First-principles calculations have been carried out to investigate intrinsic defects including vacancies, interstitials, antisite defects, Frenkel and Schottky defects in the 312 MAX phase Ti₃SiC₂. The formation energies of defects are obtained according to the elemental chemical potentials which are determined by the phase stability conditions. The most stable self-interstitials are all found in the hexahedral position surrounded by two Ti(2) and three Si atoms. For the entire elemental chemical potential range considered, our results demonstrated that Si and C related defects, including vacancies, interstitials and Frenkel defects are the most dominant defects. Besides, the present calculations also reveal that the formation energies of C and Si Frenkel defects are much lower than those of all Schottky defects considered. In addition, the calculated profiles of densities of states for the defective Ti₃SiC₂ indicate that these defects should have great influence on its thermal and electrical properties.     

Physical properties of the cubic spinel LiMn2O4

We have performed an ab initio study of structural, electronic, magnetic, vibrational and thermal properties of the cubic spinel LiMn₂O₄ by employing the density functional theory, the linear-response formalism, and the plane-wave pseudopotential method. An analysis of the electronic structure with the help of electronic density of states shows that the density of states at the Fermi level (N (E_F)) is found to be governed by the Mn 3d electrons with some contributions from the 2p states of O atoms. It is important to note that the contribution of Mn 3d states to N(_EF)$N\left(E_F\right)$ is as much as 85%. From our phonon calculations, we have obtained that the main contribution to phonon density of states (below 250 cm⁻¹) comes from the coupled motion of Mn and O atoms while phonon modes between 250 cm⁻¹ and 375 cm⁻¹ are characterized by the vibrations of all the three types of atoms. The contribution from Li increases rapidly at higher frequency (above 375 cm⁻¹) due to the light mass of this atom. Finally, the specific heat and the Debye temperature at 300 K are calculated to be 249.29 J/mol K and 820.80 K respectively.     

First-principles calculations of electronic, optical and elastic properties of ZnAl2S4 and ZnGa2O4

The optimized crystal structures, band structures, partial and total densities of states (DOS), dielectric functions, refractive indexes and elastic constants for ZnAl₂S₄ and ZnGa₂O₄ were calculated using the CASTEP module of Materials Studio package. Pressure effects were modeled by performing these calculations for different values of external hydrostatic pressure up to 50 GPa. Obtained dependencies of the unit cell volume on pressure were fitted by the Murnaghan equation of state, and the relative changes of different chemical bond lengths were approximated by quadratic functions of pressure. Variations of applied pressure were shown to produce considerable re-distribution of the electron densities around ions in both crystals, which is evidenced in different trends for the effective Mulliken charges of the constituting ions and changes of contour plots of the charge densities. The longitudinal and transverse sound velocities and Debye temperatures for both compounds were also estimated using the calculated elastic constants.     

Structural stability and electronic properties of Co2N, Rh2N and Ir2N

The structural stability and electronic properties of Co₂N, Rh₂N and Ir₂N were studied by using the first principles based on the density functional theory. Two structures were considered for each nitride, orthorhombic Pnnm phase and cubic Pa3¯ phase. The results show that they are all mechanically stable. Co₂N in both phases are thermodynamically stable due to the negative formation energy, while the remaining two compounds are thermodynamically unstable. The calculated properties show that they are all metallic and non-magnetic. Ir₂N at Pnnm phase is a potentially hard material. The bonding behavior is analyzed.     

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

The electronic structures of titanium dioxide (TiO₂) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO₂ is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the O p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t_2g state of the dopant plays a significant role in the photoresponse of TiO₂ under visible light irradiation.     

From first principles: Phase transition mechanisms of hexagonal Sc and Y under pressure

Using ab initio calculations, it is shown that the E_2g mode and the elastic shear modulus C₄₄ for hexagonal Sc or Y begin to soften at almost the same pressure, which is about 20 GPa for hexagonal Sc and about 5 GPa for hexagonal Y. Their softening behavior might be induced by both electronic s→d transfer and p→d transfer, and may be responsible for the phase transitions of hexagonal Sc and Y metals under pressure.     

Core level and valence band studies of layered Ti3SiC2 by high resolution photoelectron spectroscopy

The ternary compund Ti₃SiC₂ is a prominent representative of a new class of layered ceramics whose extraordinary physical properties has attracted much attention in recent years. Ti₃SiC₂ is electrically and thermally highly conductive, elastically rigid, lightweight, and maintains its strength to high temperatures. It is furthermore damage tolerant and oxidation resistant. We have studied fractured surfaces of coarse-grained Ti₃SiC₂ by means of photoelectron spectroscopy at the MAX-lab synchrotron radiation facility in Lund, Sweden. High-resolution C 1s, Si 2p, Ti 2p, Ti 3s and Ti 3p core-level spectra are reported and interpreted in terms of crystallographic and electronic structure. Valence band spectra confirm the validity of recent band calculations.     

Ultrahigh-resolution laser photoemission study of URu2Si2 across the hidden-order transition

We have studied the electronic structures of URu₂Si₂ employing ultrahigh-resolution laser angle-resolved photoemission spectroscopy. The change of photoemission spectra is investigated across the hidden-order transition, and the emergence of a narrow band is clearly observed near the Fermi level for both (π,0) and (π,π) directions. In addition, it is shown that tuning of light's polarization allows the signal of a hole-like dispersive feature to enhance. These observations prove that laser angle-resolved photoemission spectroscopy is an effective tool for studying the evolution of electronic structures across the hidden-order transition in URu₂Si₂.     

The configuration and electronic state of SO3 adsorbed on Au surface

We evaluated the adsorption of SO₃ molecule on Au (1 1 1) surface using first principles calculation by a slab model with a periodic boundary condition. We find that there are six stable adsorption configurations on an Au surface, where the SO₃ molecule is adsorbed above the three-fold fcc and hcp hollow sites and on the atop site. In two of these configurations, S and two O atoms are bound to the Au atoms, the next two configurations have all the three O atoms bound to the Au surface atoms, and the last two configurations have the S atom bound to an Au surface atom on the atop site and O atoms situated above the hollow sites. In these configurations, the electronic structures of SO₃ on the Au surface show that molecular orbitals of SO₃ and those of the Au surface are hybridized in the active metal d-band region, that the localized molecular orbitals in SO₃ are stabilized, and that charge is transferred from Au to S 3p by SO₃ adsorption on the Au surface though there is little other interaction of the S and O (bound to Au) component with Au. Moreover, the bond between the S and O atoms bound to Au is weakened due to SO₃ adsorption on the Au surface due to the charge polarization of the O-Au bond. This interaction is likely to encourage the S-O bond to break.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Structural and vibrational properties of Ca2FeH6 and Sr2RuH6

The structural and vibrational properties of the isostructural compounds Ca₂FeH₆ and Sr₂RuH₆ are determined by periodic DFT calculations and compared with their previously published experimental crystal structures as well as new experimental vibrational data. The analysis of the vibrational data is extended to the whole series of alkaline-earth iron and ruthenium hydrides A₂TH₆ (A=Mg, Ca, Sr; T=Fe, Ru) in order to identify correlations between selected frequencies and the T-H bond length. The bulk moduli of Ca₂FeH₆ and Sr₂RuH₆ have also been determined within DFT. Their calculated values prove to compare well with the experimental values reported for Mg₂FeH₆ and several other compounds of this structure.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

Structural transitions of NaAlH4 under high pressure by first-principles calculations

First-principles calculations have been performed on NaAlH₄ using the generalized gradient approximation pseudopotential method. The predicted β-NaAlH₄ (α-LiAlH₄-type) structure is energetically more favorable than α-NaAlH₄ for pressures over 15.9 GPa, which is apparently correlated with the experimental transition pressure 14 GPa. This transition is identified as first-order in nature with volume contractions of 1.8%. There is no pressure-induced softening behavior from our calculated phonon dispersion curves near the phase transition pressure. Based on the Mulliken population analysis, the β-NaAlH₄ structure is expected to be the most promising candidate for hydrogen storage.