Pinning mechanism in carbon nanotube doping of MgB2 superconductor

MgB_1.9C_0.1 samples are synthesized under the ambient pressure (AP) and high pressure (HP), respectively. The further studies demonstrate different field-dependence of the critical current density J_c(H) in each sample. In the view of two-gap superconductivity in these samples, δT_c pinning (resulting from the spatial fluctuations of the transition temperature) is dominant in the AP sample, while in the HP sample, both δT_c and δl pinning (due to the mean-free-path fluctuations) act together and their contributions vary with temperature. Besides the improvement of H_c2(0), due to the different pinning mechanism, J_c(H) of the HP sample shows a slower decay with the increasing fields than that of the AP sample in high fields, which suggests a possible method of retarding the rapid decay of J_c(H) under elevated fields.     

YBa2Cu3O7-δ外延薄膜的有效钉扎势

在0—7T磁场范围内，测量了不同测量电流密度下YBa₂Cu₃O_7-δ外延薄膜的电阻温度关系.实验结果表明，临界温度以下，混合态的耗散电阻率能很好地用热激活磁通蠕动描述.有效钉扎势的电流密度关系遵守Zeldov等人提出的对数关系，有效钉扎势的温度和磁场关系遵守U∝(1-T/T_c)H^-α关系，其中α=0.63，与热激活磁通点阵位错运动模型相一致，表明样品具有2D涡旋性质. 关键词：     

Yba2Cu3O7-δ不可逆线与钉扎势的关联

本文分别测量了熔融织构YBa₂Cu₃O_7-δ高温超导体不可逆线与钉扎势U₀,发现该样品的不可逆线在温区72—85K范围内呈指数形式B^*-e^(-T*/T_c)函数关系,而且在温度77K,不可逆线并不能与磁测量临界电流密度J_c=0相对应,我们认为高温超导体的不可逆线的函数形式与样品的钉扎势紧密关联。 关键词：     

Magnetic and electrical behavior of La1−xAxMnO3 (A=Li, Na, K and Rb) manganites

With a view to understand the magnetic and electrical behavior of monovalent substituted lanthanum manganites, a series of materials were prepared by sol-gel route by sintering at 1200 °C. The X-ray diffraction data were analyzed using Rietveld refinement technique and it has been found that all the samples were found to crystallize into rhombohedral structure with R3¯c space group. The values of ferro to paramagnetic (T_C) and metal-insulator transition (T_P) temperatures were obtained using ac susceptibility and electrical resistivity data, respectively. It has been found that sodium-, potassium- and rubidium-doped samples exhibit two peaks in the electrical resistivity vs. temperature plots. The observed behavior has been explained on the basis of oxygen deficiency present in the samples. The electrical resistivity data were analyzed using various theoretical models and it has been concluded that the electrical resistivity data in the low-temperature regime (T<T_P) can be explained using the equation ρ_(T)=ρ₀+ρ₂T²+ρ_4.5T^4.5, signifying the importance of the grain/domain boundary, electron-electron and two magnon scattering processes. On the other hand, the high-temperature resisitivity data (T>T_P) were explained using variable range and small polaron hopping mechanisms.     

Crossover from high-temperature vortex-liquid to low-temperature vortex-glass behavior in single phase HgBa2Ca2Cu3O8+δ superconductor

The ρ-T curves in our single phase HgBa₂Ca₂Cu₃O_8+δ superconductor were measured as a function of temperature and magnetic field, ρ=ρ₀exp(−U_eff/κ_BT). It can be transformed to another form d(lnρ)/d(1/T)=−U_eff+TdU_eff/dT, then this becomes a plot of the activation energy U_eff as a function of temperature. Our data plotted in these ways show a clear crossover from high-temperature two-dimensional vortex-liquid to a critical region associated with the low-temperature three-dimensional vortex-glass phase transition. The critical exponents v(z−1)=3.9±1.9 in this system are little different with previous measurements in BSCCO and YBCO systems.     

Normal state resistivity and Tç studies of superconducting Ti1−xSbx system

The superconducting transition temperature (T_c) and the temperature dependence of the normal state resistivity of the Ti_1?xSb_x system between T_c and 300 K have been studied. The T_c values are found to depend on the heat treatment of the samples. Below 40 K, all alloys show a T² dependence of the resistivity. However, the sample with x = 0.53 is not superconducting and shows a different behaviour of the resistivity.     

Pressure cycle of superconducting Cs0.8Fe2Se2 : A transport study

We report measurements of the temperature and pressure dependence of the electrical resistivity (ρ) of single-crystalline iron-based chalcogenide Cs_0.8Fe₂Se₂. In this material, superconductivity with a transition temperature develops from a normal state with extremely large resistivity. At ambient pressure, a large “hump” in the resistivity is observed around 200 K. Under pressure, the resistivity decreases by two orders of magnitude, concomitant with a sudden T_c suppression around . Even at 9 GPa a metallic resistivity state is not recovered, and the ρ(T) “hump” is still detected. A comparison of the data measured upon increasing and decreasing the external pressure leads us to suggest that the superconductivity is not related to this hump.     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

Structural,electrical transport,and magnetic properties of Ni1−xZnxFe2O4

Structural, electrical, and magnetic properties of Ni_1−xZn_xFe₂O₄ (x=0.2, 0.4) samples sintered at various temperatures have been investigated thoroughly. The bulk density of the Ni_0.8Zn_0.2Fe₂O₄ samples increases as the sintering temperature (T_s) increases from 1200 to 1300 °C and above 1300 °C the bulk density decreases slightly. The Ni_0.6Zn_0.4Fe₂O₄ samples show similar behavior of changes to that of Ni_0.8Zn_0.2Fe₂O₄ samples, except that the bulk density is found to be the highest at 1350 °C. The DC electrical resistivity, ρ(T)$\rho (T)$, decreases as the temperature increases indicating that the samples have semiconductor-like behavior. As the Zn content increases, the Curie temperature (T_c), resistivity, and the activation energy decrease while the magnetization, initial permeability, and the relative quality factor (Q) increases. A Hopkinson peak is obtained near T_c in the real part of the initial permeability vs. temperature curves. The ferrite with higher permeability has a relatively lower resonance frequency. The initial permeability and magnetization of the samples has been found to correlate with density, average grain sizes. Possible explanation for the observed structural, magnetic, and changes of resistivity behavior with various Zn content are discussed.     

Electrical behavior of nano-polycrystalline (La1−yKy)0.7Ba0.3MnO3 manganites

We present a study of the structural and electrical behavior of nano-polycrystalline mixed barium and alkali substituted lanthanum-based manganite, (La_1−yK_y)_0.7Ba_0.3MnO₃ with y=0.0-0.3. The samples were synthesized by the polymerization complex sol-gel method. The powder X-ray diffraction (XRD) data of the samples show a single-phase character with space group. The magnetic and electrical transport properties of the nano-polycrystalline samples have been investigated in the temperature range 50-300 K and a magnetic field up to 10 kOe. The metal-insulator transition temperature T_p of all the samples decreased with potassium doping, and also, it increased slightly with the application of magnetic field. The low field magnetoresistance, which is absent in the single-crystalline perovskite, was observed and increased with decreasing temperature. Comparing the experimental resistivity data with the theoretical models shows that the high temperature electrical behavior of these samples is in accordance with the adiabatic small polaron-hopping model. In the metal-ferromagnetic region the resistivity is found to be quite well described by ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5.     

The large anisotropy of the magnetic and transport properties in the Ba5Co5ClO13 single crystal

In this Letter, the single crystals of Ba₅Co₅ClO₁₃ were grown by the flux method successfully. Their structure, magnetic and transport properties were studied. A large anisotropy of the magnetic and transport properties has been detected in this compound. Below the TN∼108 K, the magnetic susceptibility exhibits an antiferromagnetic peak in χc and an upturn transition in χab. We suggest that this behavior is consistent with the competition of the ferromagnetic (FM) intra-blocks coupling and antiferromagnetic (AFM) inter-blocks coupling in this compound. The temperature dependence of the resistivity displays a hump in ρab and a kink in ρc around TN, suggesting the strong coupling between the transport and magnetic properties. Above and below the transition, the transport properties in ab plane follow the three-dimensional (3D) variable range hopping (VRH) mechanism.     

Magnetic and electrical transport properties in the self-doped manganite La0.9Mn0.9M0.1O3 (M=Mn,Zn and Ti)

The magnetic and electrical transport properties of La_0.9Mn_0.9M_0.1O₃ (M=Mn, Zn and Ti) were investigated. The temperature and magnetic field dependence of electrical resistivity (ρ) and dc magnetization were studied. All the compounds are found in rhombohedral structure. The excess oxygen in all three compounds was detected through iodometric titration. A modification in resistivity is observed when M=Mn is replaced by M=Zn and Ti. The high temperature resistivity above T_C follow variable range hopping model for both Zn and Ti compounds. For Zn doping, the observation of large field-cool effect and decrease in resistivity at room temperature and is assumed to be due to the implant of Mn⁴⁺ in Mn³⁺ matrix, which favor Mn³⁺/Mn⁴⁺ double exchange. The ferromagnetic behavior below T_C for the compound with M=Ti is correlated to the excess oxygen in it, which implants Mn⁴⁺ and thus incorporates ferromagnetic interactions. The substitutions lead to a reduction of T_c and magnetization.     

Transport properties and the anisotropy of Ba1 − x K x Fe2As2 single crystals in normal and superconducting states

The transport and superconducting properties of Ba_{1 ? x} K _x Fe₂As₂ single crystals with T _c ≈ 31 K were studied. Both in-plane and out-of-plane resistivity was measured by a modified Montgomery method. The in-plane resistivity is almost the same for all studied samples, unlike the out-of-plane resistivity, which differs considerably. We have found that the resistivity anisotropy γ = ρ _c /ρ _ab is almost independent of temperature and lies in the range 10–30 for the studied samples. This indicates the extrinsic nature of high out-of-plane resistivity, which may be due to the presence of flat defects along Fe-As layers in the samples. This statement is supported by comparatively small effective mass anisotropy, obtained from the upper critical field measurements, and from the observation of the so-called “Friedel transition,” which indicates the existence of some disorder in the samples in the c-direction.     

Electrical transport of (1−x)La0.7Ca0.3MnO3+xAl2O3 composites

We report the resistivity (ρ)-temperature (T) patterns in (1-x)La_0,7Ca_0,3MnO₃+xAl₂O₃ composites (0≤x≤0.05) over a temperature regime of 50-300 K. Al₂O₃ addition has increased the resistivity of these composites. The Curie temperature (T_C) is almost independent on the Al₂O₃ content and is about 250 K for all the samples, while the metal-insulator transition temperature (T_MI) decreases with increasing Al₂O₃ content. Based on the phenomenological equation for conductivity under a percolation approach, which is dependent on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the experimental data (ρ−T) from 50 to 300 K and find that the activation barrier increases as Al₂O₃ content increases.     

Zum Kondo-Effekt in Zink-Mangan: Der Einfluß der Manganverteilung auf den elektrischen Widerstand im Temperaturbereich bis 0,4 °K

The electrical resistivity of dilute Zn-Mn alloys (c=0–0.6 at% Mn) has been measured in a temperature range from room temperature (RT) down to 0.4 °K. Three different series of samples are investigated: 1. annealed 72 h, 400 °C, 2. annealed and aged 1 year atRT, 3. coldworked atRT. All samples show a minimum in the residual resistance atT _min∝c ^1/5 followed by an increase of the resistivityρ∝k _s · lnT (Kondo-effect). For some alloys the resistivity minimum is followed by a resistivity maximum atT _max.T _max mainly depends on the distribution of the Mnatoms in the Zn-matrix. The coefficientk _s is also strongly influenced by changes of the Mn-distribution. For alloys withc>0.02 at% (max. solubility of Mn in Zn atRT) the slopek _s =?ρ/? lnT decreases with increasing degree of precipitation of the manganese. Samples withc<0.02 at% however, show the opposite effect, increasingk _s with increasing Mn-precipitation. Moreover, during the aging process, we observe an increase in the “residual resistance” (resistance ratioR _T/R ₂₉₃ atT _min) for these alloys. The effect can be explained by assuming that the precipitation leads to the formation of superparamagnetic clusters.     

Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

The effect of the B-site size on the structural,magnetic and electrical properties of La0.7Ca0.3MnO3−δ compounds

The perovskite-type ceramic La_0.7Ca_0.3MnO_3−δ was prepared by the solid-state reaction with 0.00?δ?0.15. X-ray diffraction, electrical and magnetic measurements were performed to examine the effect of the B-site size on the properties of these materials. We have found that the structure is orthorhombic for 0.00?δ?0.075 and becomes rhombohedral for 0.10?δ?0.15. The measurements of the magnetization as a function of the temperature, M(T), shows a ferromagnetic-paramagnetic transition at the Curie temperature T_C for δ=0.00. When increasing δ, these curves report the presence of two types of transitions. The first one is from the ferromagnetic to the antiferromagnetic state, indicating the existence of a charge-ordering state (T_CO). The second antiferromagnetic-paramagnetic transition occurs at the Neel temperature T_N. The temperature dependence of the resistivity ρ(T), indicates a metallic behaviour at low temperature (T<T_p) and a semiconductor behaviour at high temperature (T>T_p) for δ=0.00. For 0.05?δ?0.10, the ρ(T) curves shows a semiconductor behaviour revealing the disappearance of the metallic state which reappear at low temperature for δ=0.125 and 0.150.     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Double metal-insulator peaks and effect of Sm substitution on magnetic and transport properties of hole-doped La0.85Ag0.15MnO3

La_0.85−xSm_xAg_0.15MnO₃ (x=0−0.2) ceramics were prepared using the conventional solid-state synthesis method to investigate the effect of Sm³⁺ substitution on magnetic and electrical transport properties. Magnetic susceptibility versus temperature measurements showed all samples exhibit ferromagnetic to paramagnetic transition with Curie temperature, T_c decreasing from 283 K (x=0) to 164 K (x=0.2) with increasing Sm³⁺. The observed slope in susceptibility, χ′ versus temperature curves below T_c indicates the possible presence of FM and AFM phases in the metallic region. In addition, a deviation from the Curie-Weiss law above T_c in 1/χ′ versus T curves indicates the existence of a Griffith's phase in the x=0.05−0.2 samples due to the Sm³⁺ ion substitution. The Griffith temperature, T_G was found to decrease from 295 K (x=0.05) to 229 K (x=0.2). Electrical resistivity measurements of the samples in zero field showed transition from metallic behavior to insulating behavior as the temperature was increased. For x=0, two metal-insulator, MI transition peaks were observed at T_p1=282 K and at T_p2=250 K. Both peaks shifted to lower temperatures with the increase in Sm³⁺. The relative resistivity of the first peak to the second peak decreases with increasing Sm³⁺ for x>0.05 while at x=0.2 the T_p1 peak was strongly suppressed. Magnetoresistance, MR was observed to weaken with Sm³⁺ substitution. The metallic region of the ρ(T) curve of the x=0−0.15 samples was fitted to the model of electron-electron and electron-magnon scattering while the insulating region was fitted to the variable range hopping, VRH model. The resistivity behavior indicated that the substitution of Sm³⁺ weakened the double exchange process and enhanced the Jahn-Teller effect. Our results indicated that the T_p1 peak is strongly related to the double-exchange mechanism while the T_p2 peak is suggested to originate from magnetic inhomogeneity.     

Superconductivity in the graphite-potassium intercalation compound C8K

Superconducting properties of pseudo-single crystals of C₈K were investigated by low frequency a.c. magnetic susceptibility and electrical resistivity measurements. The measured values of T_c were between 128 and 198 mK for 13 samples. Measurements of the superconducting transition in a magnetic field revealed a remarkable anisotropy, such that if θ is defined as the angle between the applied magnetic field and the layer plane, type II superconductivity was observed for 0° ≦ ∣ θ ∣ ? 25° and type I superconductivity for 25° ? ∣ θ ∣≦ 90°. The angular dependences of H_c2 and H_c3 were fairly well-explained by the effective mass model.