Multiple superconducting gap and anisotropic spin fluctuations in iron arsenides: Comparison with nickel analog

We present extensive ⁷⁵As NMR and NQR data on the superconducting arsenides PrFeAs_0.89F_0.11, LaFeAsO_0.92F_0.08, LiFeAs and Ba_0.72K_0.28Fe₂As₂ single crystal, and compare with the nickel analog LaNiAsO_0.9F_0.1. In contrast to LaNiAsO_0.9F_0.1 where the superconducting gap is shown to be isotropic, the spin lattice relaxation rate 1/T₁ in the Fe-arsenides decreases below T_c with no coherence peak and shows a step-wise variation at low temperatures. The Knight shift decreases below T_c and shows a step-wise T variation as well. These results indicate spin-singlet superconductivity with multiple gaps in the Fe-arsenides. The Fe antiferromagnetic spin fluctuations are anisotropic and weaker compared to underdoped copper-oxides or cobalt-oxide superconductors, while there is no significant electron correlations in LaNiAsO_0.9F_0.1. We will discuss the implications of these results and highlight the importance of the Fermi surface topology.     

STM spectroscopy on superconducting FeSe1−xTex single crystals at 300 mK

We report cryogenic scanning tunneling spectroscopy measurements on single crystals of superconducting FeSe_1−xTe_x, at doping levels of x=0.5 and 0.7, with critical temperatures . Atomically resolved topographic images were obtained, showing large-scale density-of-state clustering which appears to have no periodicity and to vary with the doping. Conductance spectra taken at 300 mK showed a generally asymmetric V-shaped background, along with a sharp dip structure within . These spectra appeared to vary over ∼nm length scale, and not correlated with the topography. The overall spectral evolution versus temperature is consistent with the dip structure arising from a superconducting energy gap which closes above T_c, and with the spectral background having a non-superconducting origin. The persistence of finite zero-bias conductance down to 300 mK, well below T_c, indicates the presence of low-energy quasiparticles on parts of the Fermi surface. We discuss our data in light of some other recent spectroscopic measurements of FeSe_1−xTe_x, and in terms of its characteristic band structure.     

Preparation of REFeAsO1−xFx (RE=Sm and Gd) superconductors at a relatively low temperature

A series of the SmFeAsO_1−xF_x and GdFeAsO_1−xF_x (x=0.05, 0.1, 0.15, 0.2, 0.25) samples have been prepared using nano-scaled ReF₃ as the fluorine resource at a relatively low temperature. The samples have been sintered at 1100 and 1120 °C for SmFeAsO_1−xF_x and GdFeAsO_1−xF_x, respectively. These temperatures are at least 50-60° lower than other previous reports. All of the so-prepared samples possess a tetragonal ZrCuSiAs-type structure. Dramatically supression of the lattice parameters and increase in T_c proved that this low temperature process was more effective to introduce fluorine into R_EFeAsO. Superconducting transition appeared at 39.5 K for SmFeAsO_1−xF_x with x=0.05 and at 22 K for GdFeAsO_1−xF_x with x=0.1. The highest T_c was detected to be 54 K in SmFeAsO_0.8F_0.2 and 40.2 K in GdFeAsO_0.75F_0.25. The use of the nano-scaled ReF₃ compounds has improved the efficiency of the present low temperature method in synthesizing the fluorine-doped iron-based superconductors.     

Chemical pressure effect in CeFeAs1−xPxO0.95F0.05

We investigate the chemical pressure effect due to P doping in the CeFeAs_1−xP_xO_0.95F_0.05(0≤x≤0.4) system. The compound CeFeAsO_0.95F_0.05 without P doping is on the boundary between antiferromagnet (AFM) and superconductor. The AFM order of Ce³⁺ local moments causes a significant reentrance behavior in both resistivity and magnetic susceptibility. Upon P doping, T_c increases and reaches a maximum of 21.3 K at x=0.15, and then it is suppressed to lower temperatures. Meanwhile, the AFM order of Ce³⁺ ions remains nearly the same in the whole doping range (0≤x≤0.4). Our experimental results suggest a competition between superconductivity and Kondo effect in the Ce 1111 system.     

Quadratic temperature dependence of electron-phonon scattering in disordered V1−xPdx alloys

We report the results of a comprehensive study of weak localization and electron-electron interaction effects in disordered V_1−xPd_x alloys whose compositions are close to the (low T_c) A15 V₃Pd compound. Magnetoresistivity and zero field resistivity have been measured within the temperature range 1.5≤T≤300 K. The low-temperature resistivity obeys a law, which is explained by electron-electron interaction. We have determined the electron-phonon scattering time (τ_e-ph) for V_1−xPd_x alloys. Our results indicate an anomalous electron-phonon scattering rate obeying quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interactions.     

Magnetocaloric properties of DyCo2−xGax alloys

The influence of the substitution of Ga atoms for Co atoms in DyCo₂ compounds on magnetocaloric properties has been investigated. A series of DyCo_2−xGa_x alloys with x=0, 0.03, 0.06, 0.1, 0.15, and 0.2 was prepared by the arc-melting method for this investigation. Experimental results revealed that the Ga substitution for Co in DyCo₂ can form a single phase with the cubic Laves phase structure up to x=0.2. As the Ga content x increases, the lattice parameter and the Curie temperature T_c increases from 143 to 196 K linearly. The maximum magnetic entropy changes in a low field change of 0-1.5 T, increasing from 8.24 to 10.61 J/K kg when the Ga content x increases from 0 to 0.03, but decreasing gradually to 3.51 J/K kg as the Ga content further increases to x=0.2. All the samples show a relatively large magnetic entropy change with very small hysteresis loss.     

Superconductivity in the Th-doped Y NiC2 compounds

We have observed superconductivity in the two-phase samples with nominal compositions (Y _1−xTh_x)NiC₂ (x=0.1,0.2,0.3,0.4,0.5). As determined by magnetic, electrical and heat capacity measurements, the superconductivity phase transition temperature T_c increases with Th concentration to . Powder X-ray diffraction data provide the evidence for bulk superconductivity in an orthorhombic CeNiC₂-type majority fraction of the sample volume while the minor impurity phase ThC₂ has no effect on the superconductivity. The variation of room temperature lattice parameters, a, b, c and v of these substitutional intermetallic samples indicates the systematic substitution of Y ³⁺ ions by Th⁴⁺ ions irrespective of the existence of the 2nd impurity phase.     

Transport properties and magnetoresistance in CoNb1−xMnxSb half-Heusler alloys with a low temperature localization

The transport properties and magnetoresistance of half-Heusler CoNb_1−xMn_xSb (x=0.0-1.0) alloys have been investigated between 2 and 300 K. In this temperature range, a metallic conductivity has been observed for the alloys with higher (x=1.0) and lower (x=0.0-0.2) Mn contents. However, the middle Mn content alloys (x=0.4-0.8) exhibit non-metallic conductive behavior. Their temperature dependence of resistivity undergoes a Mott localization law ρ=ρ₀exp(T₀/T)^p (p=1/4) rather than a thermal excitation regime ρ=ρ₀exp(E_a/kT) at low temperature (). The localization can be attributed to atomic and magnetic disorder. Resistivity peaks from 25 to 300 K were also observed for these alloys. Magnetotransport investigation reveals that these resistivity peaks result from localization effect as well as spin-disorder scattering.     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Spin polarization of Fe-rich ferromagnetic compounds in Ru2−xFexCrSi Heusler alloys

We report spin polarization P of Ru_2−xFe_xCrSi Heusler alloys by the Andreev reflection technique. Ru_2−xFe_xCrSi with L2₁-type structure and saturation magnetic moment of per formula unit is theoretically predicted to be half-metals in the wide range of the composition x. We had clarified that the experimental results of saturation magnetic moment in Fe-rich compounds had coincided with the theoretical prediction. Therefore, we have measured the differential conductance of Ru_2−xFe_xCrSi/Pb planar-type junctions. The P value of Ru_2−xFe_xCrSi was determined by fitting the differential conductance with the modified Blonder-Tinkham-Klapwijk theory. We have found that the behavior of P for Ru_2−xFe_xCrSi was independent of the composition x in the Fe-rich region; P=0.53 for both of x=1.5 and 1.7. The spin polarization is the similar value to Co-based Heusler alloys.     

A Hall coefficient investigation of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates

Ferromagnetic Ga_1−xMn_xAs epilayers with Mn mole fraction in the range of x≈2.2-4.4% were grown on semi-insulating (100) GaAs substrates using the molecular beam epitaxy technique. The transport properties of these epilayers were investigated through Hall effect measurements. The measured hole concentration of Ga_1−xMn_xAs layers varied from 4.4×10¹⁹ to 3.4×10¹⁹ cm⁻³ in the range of x≈2.2-4.4% at room temperature. From temperature dependent resisitivity data, the sample with x≈4.4% shows typical behavior for insulator Ga_1−xMn_xAs and the samples with x≈2.2 and 3.7% show typical behavior for metallic Ga_1−xMn_xAs. The Hall coefficient for the samples with x≈2.2 and 4.4% was fitted assuming a magnetic susceptibility given by Curie-Weiss law in a paramagnetic region. This model provides good fits to the measured data up to and the Curie temperature T_c was estimated to be 65, 83 K and hole concentration p was estimated to be 5.1×10¹⁹, 4.6×10¹⁹ cm⁻³ for the samples with x≈2.2 and 4.4%, respectively, confirming the existence of an anomalous Hall effect for metallic and insulating samples.     

Specific heat of (Ca1−xSrx)3Ru2O7 single crystals

We have measured the specific heat of crystals of (Ca_1−xSr_x)₃Ru₂O₇ using ac- and relaxation-time calorimetry. Special emphasis was placed on the characterization of the Néel () and structural () phase transitions in the pure, x=0 material. While the latter is believed to be first order, detailed measurements under different experimental conditions suggest that all the latent heat (with L∼0.3R) is being captured in a broadened peak in the effective heat capacity. The specific heat has a mean-field-like step at T_N, but its magnitude () is too large to be associated with a conventional itinerant electron (e.g. spin-density-wave) antiferromagnetic transition, while its entropy is too small to be associated with the full ordering of localized spins. The T_N transition broadens with Sr substitution while its magnitude decreases slowly. On the other hand, the entropy change associated with the T_c transition decreases rapidly with Sr substitution, and is not observable for our x=0.58 sample.     

Anomalous paramagnetic behavior in the paramagnetic phase of La2/3−xYxCa1/3MnO3 studied through EPR and its relation to colossal magnetoresistance

Electron paramagnetic resonance on La_2/3−xY_xCa_1/3MnO₃ in the paramagnetic (PM) regime is presented for 0≤x≤0.133. The resonance linewidth (ΔH_pp) decreases with cooling, reaches the minimum at T_min, and then anomalously increases with further cooling toward T_c. Our analysis on ΔH_pp(T) below T_min shows that the anomalous PM behavior below T_min is due to the appearance of a ferromagnetic (FM) phase within the PM matrix caused by the applied magnetic fields. The correlation between the anomalous PM and the colossal magnetoresistance is discussed. We argue that both are caused by the phase segregation in which the compound is phase-separated into a mixture of FM and PM regions.     

First-principles and Monte Carlo combinational study on Zn1−xCoxO diluted magnetic semiconductor

The electronic structures and magnetic properties of Zn_1−xCo_xO (x=5.55%,8.33%,12.5%) are studied using first-principles calculations in combination with Monte Carlo (MC) simulation. The combinational method makes possible a complete simulation from the microscopic magnetic interaction to macroscopic magnetic behavior. The calculated results from first principles indicate that the ferromagnetic ground state is stabilized by a half-metallic electronic structure which originates from the strong hybridization between Co 3d electrons and O 2p electrons. With the magnetic coupling strengths obtained from first-principles calculations, the MC simulation predicts the ferromagnetism of Zn_1−xCo_xO (x=5.55%,8.33%,12.5%) with , which is consistent with the experimental facts.     

Low-field magnetic properties of LaMnO3+δ with 0.065≤δ≤0.154

In a weak magnetic field LaMnO_3+δ exhibits at δ=0.065 below the paramagnetic-to-ferromagnetic (FM) Curie temperature, T_C, a mixed (spin-glass and FM) phase followed by a frustrated FM phase at δ between 0.100 and 0.154. The same behavior is observed in La_1−xCa_xMnO₃ with x between 0 and 0.3. This can be understood by the similar variation of the Mn⁴⁺ concentration, c between ≈0.13 and 0.34, in both materials when x or δ is increased. On the other hand, considerable differences are found between these compounds in the values of the magnetic irreversibility, in the dependencies of T_C(c) and the magnetic susceptibility, χ(c), as well as in the critical behavior of χ(T) near T_C. These differences can be explained by distortions of the cubic perovskite structure, by the reduced lattice disorder and by the more homogeneous hole distribution in LaMnO_3+δ than in La_1−xCa_xMnO₃.     

Ordered zinc-vacancy induced Zn0.75Ox nanophase structure

Using transmission electron microscopy, a new nano-phase structure of Zn_0.75O_x induced by Zn-vacancy has been discovered to grow on wurtzite ZnO nanobelts. The superstructure grows epitaxial from the surface of the wurtzite ZnO nanobelts and can be fitted as an orthorhombic structure, with lattice parameters a′=2a, and c′=c, where a and c are the lattice parameters of ZnO. The superstructured phase is resulted from high-density Zn vacancies orderly distributed in the ZnO matrix. This study provides direct observation about the existence of Zn-vacancies in ZnO.     

Electrical switching and thermal studies on Ge22Te78−xIx chalcohalide glasses: The effect of iodine on network-topology

Investigations on the electrical switching behavior and thermal studies using Alternating Differential Scanning Calorimetry have been undertaken on bulk, melt-quenched Ge₂₂Te_78−xI_x (3≤x≤10) chalcohalide glasses. All the glasses studied have been found to exhibit memory-type electrical switching. The threshold voltages of Ge₂₂Te_78−xI_x glasses have been found to increase with the addition of iodine and the composition dependence of threshold voltages of Ge₂₂Te_78−xI_x glasses exhibits a cusp at 5 at.% of iodine. Also, the variation with composition of the glass transition temperature (T_g) of Ge₂₂Te_78−xI_x glasses, exhibits a broad hump around this composition. Based on the present results, the composition x=5 has been identified as the inverse rigidity percolation threshold at which Ge₂₂Te_78−xI_x glassy system exhibits a change from a stressed rigid amorphous solid to a flexible polymeric glass. Further, a sharp minimum is seen in the composition dependence of non-reversing enthalpy () of Ge₂₂Te_78−xI_x glasses at x=5, which is suggestive of a thermally reversing window at this composition.     

Mn1−xFexIn2Se4: a new layered semiconductor system

Mn_1−xFe_xIn₂Se₄ compounds (x=0.1; x=0.7) were grown by the chemical vapor transport method. X-ray diffraction analysis data show that these compositions crystallize as different polytypes that belong to the hexagonal structure. The crystal symmetry of the sample with x=0.1 belongs to the space group Rm and for the sample with x=0.7 the space group is P6₃mc.The magnetic behavior of both samples has been investigated in the temperature range between 5 and 300 K. Spin-glass-like behavior below the freezing temperature T_f=9 K has been found for the sample with x=0.7. The sample with Fe content x=0.1 behaves as a paramagnet down to the lowest experimental measured temperature. High-temperature susceptibility data follow the Curie-Weiss law with a negative paramagnetic temperature indicating predominant antiferromagnetic interactions.Optical studies reveal that both samples (x=0.1; 0.7) are direct band gap semiconductors. The temperature dependence of the energy gap fits Varshni relation quite well.     

Surface defect states of CdTexS1 − x quantum dots

Properties of surface defect states of CdTe_xS_1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be for by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTe_xS_1 − x quantum dots are also determined.