Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

Synthesis of βGa2O3 nanowires by an MOCVD approach

We have synthesized monoclinic gallium oxide (βGa₂O₃) nanowires on Au-coated Si substrates by a reaction of a trimethylgallium and oxygen mixture. The βGa₂O₃ nanowires became progressively thinner from bottom to top, with diameters ranging from 10 to 200 nm and lengths of several micrometers. We found that Au-containing nanoparticles were attached to the tips of the βGa₂O₃ nanowires and thus the nanowire growth could be a vapor–liquid–solid process .PACS 81.07.-b; 81.15.Gh     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation

In an effort to obtain one-dimensional core/shell nanostructures, thermal oxidation behavior of GaN nanowires in O₂ with N₂ ambients was investigated by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. Crystallinity and chemical bonding states of the oxidized surface in the GaN nanowires were strongly dependent on the oxidation temperature. Chemical oxidation reaction occurred upon increasing the temperature, accompanied by the formation of an amorphous Ga₂O₃ layer at the GaN nanowire surface at 900 ^°C. The XPS analyses provided further evidence supporting the change in the chemical bonding states with increasing oxidation temperature.     

Applications of electron microscopy to the characterization of semiconductor nanowires

We review our current progress on semiconductor nanowires of β-Ga₂O₃, Si and GaN. These nanowires were grown using both vapor–solid (VS) and vapor–liquid–solid (VLS) mechanisms. Using transmission electron microscopy (TEM) we studied their morphological, compositional and structural characteristics. Here we survey the general morphologies, growth directions and a variety of defect structures found in our samples. We also outline a method to determine the nanowire growth direction using TEM, and present an overview of device fabrication and assembly methods developed using these nanowires. PACS 61.14.-x; 81.07.-b; 61.14.Lj; 81.05.-t     

Aqueous synthesis and enhanced photocatalytic activity of ZnO/Fe2O3 heterostructures

We report a facile synthesis of ZnO/Fe₂O₃ heterostructures based on the hydrolysis of FeCl₃ in the presence of ZnO nanoparticles. The material structure, composition, and its optical properties have been examined by means of transmission electron microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and diffuse reflectance UV–visible spectroscopy. Results obtained show that 2.9 nm-sized Fe₂O₃ nanoparticles produced assemble with ZnO to form ZnO/Fe₂O₃ heterostructures. We have evaluated the photodegradation performances of ZnO/Fe₂O₃ materials using salicylic acid under UV-light. ZnO/Fe₂O₃ heterostructures exhibited enhanced photocatalytic capabilities than commercial ZnO due to the effective electron/hole separation at the interfaces of ZnO/Fe₂O₃ allowing the enhanced hydroxyl and superoxide radicals production from the heterostructure.     

Reentrant spin glass behavior in antiferromagnetic single crystalline Ba6Mn24O48 nanoribbons

Single crystalline Ba₆Mn₂₄O₄₈ nanoribbons with diameters ranging from one hundred nanometers to a few hundred nanometers and length up to tens of microns are synthesized via a facile molten salt method. These nanoribbons are characterized by a range of methods including X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), selected area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). The magnetic properties of Ba₆Mn₂₄O₄₈ nanoribbons are investigated by the zero-field-cooled (ZFC), field-cooled (FC) magnetization, and ac susceptibility. Upon cooling, we find the reentrant spin glass (RSG) behavior in these nanoribbons, i.e., paramagnetic (PM), antiferromagnetic (AFM), and spin glass (SG). The RSG behavior might be due to the surface spin disorder, geometrical frustration and Mn³⁺/Mn⁴⁺ mixture in Ba₆Mn₂₄O₄₈ nanoribbons.     

Chemical,optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition

Thin Ga₂O₃ films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the precursors through plasma-enhanced atomic layer deposition. The depositions were made over a temperature range of 80–250?°C with a growth per cycle of around 0.07 nm/cycle. Surface self-saturating growth was obtained with TMG pulse time ≥20?ms?at a temperature of 150?°C. The root mean square surface roughness of the obtained Ga₂O₃ films increased from 0.1?nm to 0.3?nm with increasing the growth temperature. Moreover, the x-ray photoelectron spectroscopy analysis indicated that the obtained film was Ga-rich with the chemical oxidation states Ga³⁺ and Ga¹⁺, and no carbon contamination was detected in the films after Ar⁺ sputtering. The electron density of films measured by x-ray reflectivity varied with the growth temperature, increasing from 4.72 to 5.80?g/cm³. The transmittance of Ga₂O₃ film deposited on a quartz substrate was obtained through ultraviolet visible (UV–Vis) spectroscopy. An obvious absorption in the deep UV region was demonstrated with a wide band gap of 4.6–4.8?eV. The spectroscopic ellipsometry analysis indicated that the average refractive index of the Ga₂O₃ film was 1.91?at 632.8?nm and increased with the growth temperature due to the dense structure of the films. Finally, the I-V and C-V characteristics proved that the Ga₂O₃ films prepared in this work had a low leakage current of 7.2?×?10^?11 A/cm² at 1.0?MV/cm and a high permittivity of 11.9, suitable to be gate dielectric.     

Fabrication and characterization of β-Ga2O3 optical nanowires

Monoclinic gallium oxide (β-Ga₂O₃) nanowires with lengths of tens of micrometers and diameters ranging from 100 to 250 nm are synthesized using simple physical evaporation based on vapor–liquid–solid (VLS) mechanism. The as-synthesized straight β-Ga₂O₃ nanowires show excellent diameter uniformity and sidewall smoothness, making them suitable for optical wave-guiding. Light from a fiber taper is launched into the nanowire by means of evanescent coupling. Measured propagation loss of the nanowire at 633 nm wavelength is on the order of 10 dB/mm. Favorable mechanical strength of these nanowires for elastic bending is also observed. Our results suggest that β-Ga₂O₃ nanowires are promising building blocks for micro- and nanophotonic circuits and devices.     

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Single crystalline GaN nanoribbons were synthesized through nitriding Ga₂O₃ thin films deposited on sapphire (0001) substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8-15 nm and ∼5-10, respectively.     

The effect of 3-aminopropyltrimethoxysilane on the formation of NiFe2O4/SiO2 nanocomposites

NiFe₂O₄/SiO₂ nanocomposites were prepared using a sol–gel method with the addition of 3-aminopropyltrimethoxysilane (APS). Different phases and morphologies of NiFe₂O₄/SiO₂ nanocomposites were obtained when different amounts of APS were used. The structural properties of the products were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Sheet-like morphology was observed at higher molar ratio of APS to NiFe₂O₄, while spherical NiFe₂O₄/SiO₂ nanoparticles separated from each other were formed at lower molar ratio of APS to NiFe₂O₄. The magnetic properties of the nanocomposites were also investigated, indicating that the interparticle interactions exhibit strong dependence on the molar ratio of APS to NiFe₂O₄.     

Structural and magnetic characterization of rhombohedral Ga1.2Fe0.8O3 ceramics prepared by high-pressure synthesis

The rhombohedral α- Ga_1.2Fe_0.8O₃ ceramics have been synthesized by using a high pressure technique at a pressure of 5 GPa and a temperature of 800 °C from orthorhombic ε- Ga_1.2Fe_0.8O₃ ceramics, which were identified to be isostructural with α- Fe₂O₃ and α- Ga₂O₃. The low temperature magnetism has been studied for α- Ga_1.2Fe_0.8O₃, the saturation magnetization is at 5 K, and the Morin temperature has not been found. Moreover, it is most probable that the spin reorientation of α- Ga_1.2Fe_0.8O₃ has been found at 50 K resulted from the change of magnetic dipole anisotropy and single-ion anisotropy with temperature.     

Influence of Lu2O3 on electrical and microstructural properties of CaCu3Ti4O12 ceramics

In this work, the influence of Lu₂O₃ doped on the dielectric and electrical properties of CaCu₃Ti₄O₁₂ was reported. Lu₂O₃-doped CCTO was prepared by a conventional solid state technique using CuO, TiO₂, and CaCO₃ as starting materials. The samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM); dielectric measurements were measured in the 10² Hz–10⁷ Hz frequency range at room temperature; and the nonlinear behavior of all samples was measured. The doping of Lu₂O₃ resulted in an increase in the dielectric constant of CCTO, but decreased the stability of the frequency dependence. Increasing concentrations of Lu₂O₃ resulted in decreasing nonlinear coefficients.     

Catalyst-free synthesis of GeO2 nanowires using the thermal heating of Ge powders

Germanium dioxide (GeO₂) nanowires have been synthesized by means of the simple evaporation of solid Ge powders, without using metal catalysts. The nanowires, with a diameter of about 90–200 nm, were characterized using scanning electron microscopy (SEM), X-ray diffractometry (XRD), and transmission electron microscopy (TEM). The obtained GeO₂ nanowires were crystalline with a hexagonal structure. The growth mechanism was discussed with respect to the vapor–solid process. The photoluminescence measurement revealed two emission peaks at about 2.45 eV and 2.91 eV at room temperature, opening up a route to potential applications in future optoelectronic nanodevices. Raman measurement of as-synthesized GeO₂ nanowires was made at room temperature.     

Formation of submicron-sized SrFe12−xAlxO19 with very high coercivity

Submicron-sized SrFe_12−xAl_xO₁₉ (x=1.3) was formed in glass-ceramic matrix using controlled thermocrystallization of the SrO–Fe₂O₃–Al₂O₃–B₂O₃ glass and the hexaferrite powder was obtained by removing the matrix phases. The samples were characterized by X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray (EDX) analysis and magnetization measurements. The glass-ceramic material exhibits very high coercivity value up to 10.18 kOe which approaches a theoretically estimated maximum value for the compound. The hexaferrite powder consists of well faceted single crystals, which adopt the shape of a truncated hexagonal bipyramid. The powder saturation magnetization value is close to the theoretically estimated one for bulk material. Crystal structure of the powder was refined by Rietveld method and distribution of Al atoms on Fe sites was determined. Al atoms occupy 41% of 2a sites, 14% of 12k sites and 5% of 4e(1/2) sites, while 4f sites are not affected.     

Preparation of the SrFe12O19-based magnetic composites via boron oxide glass devitrification

Magnetic composites were obtained in the system SrO–Fe₂O₃–B₂O₃ by oxide glass heat treatment at 600–950 °C. Samples of the composites were investigated using XRD analysis, magnetic measurements, electron microcopy, and thermal analysis. It was shown that chemical composition of the precursor oxide glass and thermal treatment conditions influenced on the SrFe₁₂O₁₉ particles morphology and magnetic properties. The composites and powders were obtained containing hexaferrite as single domain platelet crystals or polycrystalline aggregates with a coercive force up to 6300 Oe in the former case and 4200 Oe in the latter case.     

Electrostatic spray deposition of Gd0.1Ce0.9O1.95 and La0.9Sr0.1Ga0.8Mg0.2O2.87 thin films

The deposition of gadolinia-doped ceria (CGO, Gd_0.1Ce_0.9O_1.95) and LaGaO₃-based perovskite oxides (LSGM, La_0.9Sr_0.1Ga_0.8Mg_0.2O_2.87) thin films on a stainless steel substrate was studied using the electrostatic spray deposition (EDS) technique. The effect of process conditions, such as deposition temperature, deposition time and liquid flow rate, on the surface morphology and microstructure of thin films was examined with scanning electron microscopy (SEM) and powder X-ray diffraction (XRD). The deposited CGO films with a highly porous and three-dimensional interconnected structure were obtained at a liquid flow rate of 0.5 ml/h, a deposition temperature of 503 K and a deposition time ranging from 0.5 to 1 h. On the other hand, the deposited LSGM thin films with porous microstructure were also obtained at the deposition time of 1 h, the deposition temperature of 533 K and the liquid flow rate of 0.5 ml/h. The deposited CGO and LSGM thin films were amorphous at the used deposition temperature. Subsequently, the samples were annealed at 1173 K for 2 h and the desired crystal structures were obtained. The chemical analysis of the thin films was investigated by energy dispersive X-ray (EDX) analysis. The observed chemical compositions of the samples were in a fair agreement with those of the starting solutions.     

ESR spectra of Eu centers in defect Ga2S3 single crystals

In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu²⁺ centers in defect Ga₂S₃ single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity ¹⁵¹Eu atoms in Ga₂S₃:Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga₂S₃ single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu²⁺(4f⁷) ion with spin S=7/2, g=4.18±0.02 and concentration of the states of Eu N=6.3×10¹⁴ cm⁻³.     

Structural characterization of ZnO/ Er2O3 core/shell nanowires

Zinc oxide/erbium oxide core/shell nanowires are of great potential value to optoelectronics because of the possible demonstration of laser emission in the 1.5 μm range. In this paper we present a convenient technique to obtain structures of this composition. ZnO core nanowires were first obtained by a vapor–liquid–solid (VLS) method using gold as a catalyst. ZnO nanowires ranging from 50 to 100 nm in width were grown on the substrates. Erbium was incorporated into these nanowires by their exposure to Er(tmhd)₃ at elevated temperatures. After annealing at 700 C in air, the nanowires presented 1.54 μm emission when excited by any of the lines of an Ar⁺ laser. An investigation of nanowire structure by HRTEM indicates that indeed the cores consist of hexagonal ZnO grown in the 001 direction while the surface contains randomly oriented Er₂O₃ nanoparticles. EXAFS analysis reveals that the Er atoms possess a sixfold oxygen coordination environment, almost identical to that of Er₂O₃. Taken collectively, these data suggest that the overall architectures of these nanowires are discrete layered ZnO/ Er₂O₃ core/shell structures whereby erbium atoms are not incorporated into the ZnO core geometry.     

Formation of V2O3 nanocrystals by thermal reduction of V2O5 thin films

We report the formation of homogeneous and stable V₂O₃ nanocrystals, directly from V₂O₅ thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V₂O₅ thin films in vacuum is remarkably different when compared to reduction of V₂O₅ single crystals and results in the formation of nanophase V₂O₃. Thermally grown V₂O₃ nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.