Effects of AlN Layer and Impurities on Optical Properties of GaN

IntroductionIn recent years Ga N and the related - group semiconductors have shown suitability forhigh- temperature,high- power electronic devicesand blue- ultraviolet light emitters due to theirstrong binding energies and large direct energyband gaps[1,2 ] .A considerable effortis being devot-ed to the improvement of the quality of epitaxiallayers,material characterization methods and tech-niques for device processing.New substrate mate-rials and various buffer layers have been utilized to…     

Effects of AlN Layer and Impurities on Optical Properties of GaN

The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties. While the introduction of the AIN buffer layer makes not only the surface morphology but also the optical properties improve. Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence(PL) spectra.     

The role of acoustic phonon scattering in charge transport in organic semiconductors: a first-principles deformation-potential study

The electron-acoustic phonon scattering for charge transport in organic semiconductors has been studied by first-principles density functional theory and the Boltzmann transport equation with relaxation time approximation. Within the framework of deformation-potential theory, the electron-longitudinal acoustic phonon scattering probability and the corresponding relaxation time have been obtained for oligoacene single crystals (naphthalene, anthracene, tetracene and pentacene). Previously, the electron-optic...     

‘Soft’ phonon modes, structured diffuse scattering and the crystal chemistry of Fe-bearing sphalerites

Electron diffraction has been used to carefully investigate the reciprocal lattices of a range of iron-bearing sphalerites looking for evidence of Fe clustering and/or Fe/Zn ordering in the form of either additional satellite reflections or a structured diffuse intensity distribution accompanying the strong Bragg reflections of the underlying sphalerite-type average structure. While a highly structured diffuse intensity distribution in the form of transverse polarized {110}^* sheets of diffuse intensity has been detected and found to be characteristic of all compositions, it does not appear to arise from Fe clustering and/or Fe/Zn ordering. Rather inherently low frequency, and therefore strongly thermally excited, phonon modes propagating along reciprocal space directions perpendicular to each of the six 〈110〉 real space directions of the average structure are suggested to be responsible for these {110}^* sheets of diffuse intensity. Monte Carlo simulation (for a range of Zn-S, Zn-Zn and S-S interaction strengths) and subsequent Fourier transformation is used to confirm the existence of these low-frequency phonon modes of distortion as well as to show that they are an intrinsic, predictable property of the corner-connected tetrahedral structure of sphalerite. The low-frequency phonon modes involve coupled (Zn, Fe) and S motion in one-dimensional strings along 〈110〉 real space directions.     

利用Pd催化合成单晶GaN纳米线的光学特性(英文)

基于金属元素钯具有的催化特性,采用射频磁控溅射方法,在Si(111)衬底上沉积Pd:Ga2O3薄膜,然后在950℃下对薄膜进行氨化,制备出大量GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶GaN纳米线,直径在20-60nm范围内,长度为几十微米,表面光滑无杂质,结晶质量较高.用光致发光光谱对样品的发光特性进行测试,分别在361.1、388.6和426.3nm处出现三个发光峰,且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移.对GaN纳米线的生长机制也进行了简单的讨论.     

氮化镓粉末的溶胶凝胶法制备及其结构

报道了一种新颖而有效的二步制备氮化镓粉末的方法. 以乙氧基镓Ga(OC2H5)3作前驱体, 利用溶胶-凝胶法和高温氨化法相结合, 在950 ℃氨化温度下, 将凝胶与流动的NH3反应20 min, 合成了GaN粉末. XRD、FTIR、TEM及SAED的测量结果表明, GaN粉末是六方纤锌矿结构的单晶晶粒, 粉末粒度较均匀, FTIR吸收谱有明显的宽化现象.     

ECR Plasma in Growth of Cubic GaN by Low Pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultra-violet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs(001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (600°C) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity-coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated. The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics of c-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.     

Superconductivity in cuprates: Details of electron phonon coupling

The Bardeen‐Cooper‐Schrieffer (BCS) model explains superconductivity (SC) as due to correlation between electronic momentum and nuclear momentum (phonons) in a free electron gas. The BCS model lacks chemical specificity, however, since the coupling mechanism is left unspecified. After the discovery of high T_C superconductivity in 1986 it was concluded that electron–phonon interactions are insufficient to explain electron pairing. A large part of theoretical research has since been aiming at finding another mechanism that would allow us to consider the superconducting system as a gas of charged free bosons. However, there appears to be no reason to assume free electrons in oxides. In this article the free‐electron criterion is therefore replaced by the criterion that a pair of electrons can move freely between sites without resistance, i.e., without activation energy. Electron pair transfer is treated in a many‐electron real space approach using standard mixed‐valence theories. Mott‐Hubbard‐U is strictly defined, its dependence on breathing mode coordinates analyzed, and the connection between U and the energy gap for superconductivity clarified. d‐wave gap anisotropy is found to be consistent with the general atomic level model presented here. Softening of phonon half‐breathing modes in inelastic neutron scattering (INS) is connected to mixed‐valency. The fundamental vibronic interaction between spin density wave (SDW) and charge density wave (CDW) states leads to a new phase with energy gap and electron pair carriers that can only be the superconducting phase. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2010     

GaN薄膜的两步法制备及其物性转变的研究

本实验通过水浴加热和简单化学气相氨化两步法,在旋涂有ZnO的Si衬底上成功合成了由排列整齐纺锤体形貌的GaOOH构成的薄膜,然后在950℃下对样品进行氨化得到由排列整齐纺锤体组成的GaN薄膜。然后对氨化前后样品的形貌,结构和光学性能分别通过FESEM、EDS、TEM、XRD和PL谱进行了表征。结果表明:水热生成的GaOOH薄膜是由纺锤体形状GaOOH紧密排列形成,该纺锤体形状GaOOH有直径大约600 nm,长约为1.5~2μm。氨化前后样品的形貌没发生太大的变化;但晶体结构由正交晶系相GaOOH转变为六方纤锌矿GaN;而且发光峰也由较宽的绿光峰转变为中心为365 nm的蓝光峰,这主要是由于样品由正交晶系相GaOOH转变为六方纤锌矿GaN引起的。最后对排列整齐的锤体形构成的GaOOH薄膜的形成机理以及GaOOH向GaN的转变过程发生的化学反应做了简单的探讨和分析。     

Studies of carbon behaviour on GaN surface in ultra high vacuum (UHV)

In this study, AES was used to thermally clean GaN surfaces, and analysis was done as the temperature was gradually increased. Heating samples to 1010 °C resulted in nearly stoichiometric and contamination‐free surfaces. The behaviour of carbon on the GaN surface was studied with sputtering in AES. It was found that C was a surface issue than a crystal problem. XPS was used to identify the chemical state of the contaminants on the surface of as‐grown GaN. These were found to be in the form of gallium oxides, hydroxides, graphite and carbides. Copyright © 2005 John Wiley & Sons, Ltd.     

利用Kelvin探针力显微镜研究纳米尺度下n-AlGaN/GaN薄膜的表面电荷性质

本论文利用真空KFM技术研究了纳米尺度下n-AlGaN/GaN薄膜的表面电荷性质并对其进行了定量测量,结果发现n-AlGaN/GaN薄膜的表面位错均为电活性的受主型表面态,所捕获电荷的区域远远大于表面位错的大小,其最大表面接触电势差达到了590mV。在光的照射下,n-AlGaN/GaN薄膜的表面电荷发生了明显的光生电荷重新分布现象     

Photoluminescence properties of SnO2 nanowhiskers grown by thermal evaporation

SnO₂ nanowhiskers were synthesized by thermal oxidation with and without a gold film as a catalyst. The SEM images reveal wire-like and rod-shaped nanowhiskers about several hundred micrometers in length and 100 nm in diameter. The three observed Raman peaks at 474, 632, and 774 cm⁻¹ indicate the typical rutile phase which is in agreement with the X-ray diffraction results. The photoluminescence properties were measured at room temperature. The peaks at 342 nm corresponding to the excitation transitions from the conduction band to the valence band of the SnO₂ nanowhiskers were not observed. However, a strong emission band at 600 nm was detected indicating the existence of oxygen vacancies in both samples. A new emission band at 398 nm was also observed in the sample with the gold film and it could be attributed to the near band-edge emission.     

Annealing effects on the structure, photoluminescence, and magnetic properties of GaN/Mn3O4 core-shell nanowires

Nanowires consisting of GaN/Mn₃O₄ were prepared using a two-step approach that involved dipping the as-synthesized GaN nanowires into an aqueous manganese acetate solution. To examine the effects of annealing, GaN/Mn₃O₄ core-shell nanowires were heated thermally to 700 °C in N₂ ambient. Transmission electron microscopy showed that the continuous Mn₃O₄ shell layer had agglomerated to expose a bare GaN core surface after thermal annealing. The magnetic measurements showed that the ferromagnetic behavior of the GaN nanowires had been suppressed by coating with the Mn₃O₄ shell, without significant change by the subsequent thermal annealing. The GaN/Mn₃O₄ core-shell nanowires exhibited blue, green, and red photoluminescence (PL) emission. The red emission was enhanced by thermal annealing. This paper discusses the associated mechanism for the variations in PL and magnetic properties of GaN/Mn₃O₄ core-shell nanowires.     

Depth profiling of light elements in PAMBE‐grown GaN and helium‐implanted titanium with heavy ion time‐of‐flight elastic recoil detection

The heavy ion time‐of‐flight elastic recoil detection analysis (HI‐ERDA) technique was used to investigate the possibility of measuring near‐surface elemental depth profiles of light and mid‐Z elements in thin films of plasma‐assisted molecular beam epitaxy (PAMBE)‐grown GaN and helium‐implanted titanium. The great advantage of HI‐ERDA is the ability to measure mass‐separated elemental depth profiles simultaneously. However for some materials it is not certain whether HI‐ERDA can be used successfully because significant sputtering or other beam‐induced damage may occur. The damage to the surfaces by a 77 MeV iodine beam was assessed using RBS, AFM and profilometry. The results show that for thin PAMBE‐grown polycrystalline GaN films and for titanium that has been heavily implanted with helium a significant modification of the near‐surface region is caused by the probing heavy ion beam. For the PAMBE‐grown GaN films the most significant loss trend is observed for nitrogen. Surprisingly this was not accompanied by a change in surface topology. In contrast, an almost complete removal of the heavily helium‐implanted surface layer was measured for the titanium specimens. The investigation shows that reference measurements with additional techniques such as RBS, AFM and profilometry have to be performed to ascertain sample integrity before HI‐ERDA data can be used. Copyright © 2004 John Wiley & Sons, Ltd.     

An investigation of high temperature phonon anharmonicity of KCl by the FT-IR emission technique

P-polarized far-infrared emission spectra from KCl polycrystalline films were observed around the reststrahlen band at temperatures from 40° C up to 530° C. Based upon the virtual mode theory of thin films these were analyzed using a dielectric response function in which an empirical phonon self-energy is considered. From this analysis the empirical forms for the self-energy around the reststrahlen band were obtained at various temperatures, and also the renormalized quasiharmonic TO and LO mode frequencies and dampings were estimated at appropriate temperatures.     

Theoretical investigation on electron scattering by benzene in the intermediate-energy range

We present a theoretical investigation on electron scattering by benzene (C₆H₆) in the intermediate-energy range. Calculated elastic differential, integral, and momentum-transfer as well as total (elastic + inelastic) and total absorption cross sections are reported for impact energies ranging from 20 to 500 eV. A complex optical potential is used to represent the electron-molecule interaction dynamics. A theoretical method based on the single-center-expansion close-coupling framework and corrected by the Padé approximant [F.A. Gianturco, R.R. Lucchese, N. Sanna, J. Chem. Phys. 102 (1995) 5743] is used to solve the scattering equations. The comparison of our calculated results with the experimental and theoretical data available in the literature is encouraging.     

Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm. Dedicated to Professor C N R Rao on his 70th birthday     

Impact of Structural Disorder on Excitonic Behaviors and Dynamics in 2D Organic-Inorganic Hybrid Perovskites

Two thin-film 2D organic-inorganic hybrid perovskites, i.e., 2-phenylethylammonium lead iodide (PEPI) and 4-phenyl-1-butylammonium lead iodide (PBPI) were synthesized and investigated by steady-state absorption, temperature-dependent photoluminescence, and temperature-dependent ultrafast transient absorption spectroscopy. PBPI has a longer organic chain (via introducing extra ethyl groups) than PEPI, thus its inorganic skeleton can be distorted, bringing on structural disorder. The comparative analyses of spectral profiles and temporal dynamics revealed that the greater structural disorder in PBPI results in more defect states serving as trap states to promote exciton dynamics. In addition, the fine-structuring of excitonic resonances was unveiled by temperature-dependent ultrafast spectroscopy, suggesting its correlation with inorganic skeleton rather than organic chain. Moreover, the photoexcited coherent phonons were observed in both PEPI and PBPI, pointing to a subtle impact of structural disorder on the low-frequency Raman-active vibrations of inorganic skeleton. This work provides valuable insights into the optical properties, excitonic behaviors and dynamics, as well as coherent phonon effects in 2D hybrid perovskites.     

A physiochemical study of excited state intramolecular proton transfer process-Luminescent chemosensor by spectroscopic investigation supported by ab initio calculations

A group of novel Schiff base derivatives were synthesized and characterized by NMR spectra, X-ray, mass and CHN analysis. An excited state intramolecular proton transfer (ESIPT) process in hydroxy Schiff base (SB4) has been studied using emission spectroscopy and it was detected that the two distinct ground state isomers of I and II are responsible for the emission. The comparison of the emission wavelength in hydrocarbon solvent strongly supports that trans enol form predominates over the cis enol form for Schiff base (SB4). With increasing base concentration of the solutions of hydroxy substituted Schiff bases (SB4 and SB5), two isobestic points are found which confirm the equilibrium among the trans enol form, anion and the cis enol form. The fluorescence of (SB4) quenched markedly with the gradual addition of Cu(2+) but the fluorescence properties of (SB5) was influenced by other metal ions. Therefore Schiff base (SB5) can be used as a new fluorescence sensor to detect the quantity of Cu(2+) ion in any sample solution depending on the relative intensity change. DFT calculations on energy, dipole moment, charge distribution of the rotamers in the ground and excited states of the Schiff base derivatives were performed and discussed. PES calculation indicates that the energy barrier for the interconversion of two rotamers is too high in the excited state than the ground state.     

Structural investigation of polyaniline/Nylon 6 blends by small-angle neutron scattering and small- and wide-angle X-ray scattering

The structure of blends of Nylon 6 with deuterated polyaniline emeraldine base (D-PANI-EB) and fully doped D-PANI salts (D-PANI-ES) formed from camphorsulfonic acid (CSA), methanesulfonic acid (MSA), or dodecyl benzenesulfonic acid (DBSA) were investigated by small-angle neutron (SANS) and X-ray scattering. The blends were formed from hexafluoro-2-propanol solutions and had volume fractions of 0.038, 0.20, and 0.40 for D-PANI/CSA, 0.20 and 0.40 for D-PANI/MSA, 0.24 and 0.44 for D-PANI/DBSA, and 0.07, 0.14, and 0.31 for D-PANI-EB. The SANS results are compared with a number of standard models for two-phase systems. No evidence was found for significant molecular mixing. In some cases the inverse power law model is in reasonable agreement with observations, and in the case of the lowest concentration of D-PANI/CSA there is an indication of mass fractal structure. This was not found at the higher concentrations. The results establish that the blends with the smaller more polar dopants CSA and MSA behave similarly and are unlike either the D-PANI/DBSA blends or those with D-PANI-EB. There is evidence that the simple picture of two pure phases is inadequate for these materials. With the exception of the D-PANI/DBSA blend which has a relatively low scattering contrast, the results indicate that the lower limit of volume fraction for application of SANS is a few percent D-PANI-ES in Nylon 6. X-ray scattering was used to demonstrate the presence of Nylon 6 lamellae and residual peaks attributable to the pure components. © 1997 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 35: 2765–2774, 1997