Annealing effect on the structural and magnetic properties of nickel ferrite thin films

Nickel ferrite is a soft magnetic material with inverse spinel structure. Soft ferrite films are used in microwave devices, integrated planar circuits, etc., because of their high resistivity. In this work, thin films of nickel ferrite were deposited on Si (100) substrate by using pulsed laser deposition (PLD) technique. The thickness of the film was measured by surface profilometer and also by X‐ray reflectivity (XRR). The films were annealed at three different temperatures to observe the effect on the structural and magnetic properties of the film. The films were characterised by X‐ray diffraction (XRD), Raman spectroscopy and vibrating sample magnetometer (VSM) to study the structural and magnetic properties. Copyright © 2010 John Wiley & Sons, Ltd.     

The synthesis and properties of CaCu3Ti4O12 thin films

The CaCu₃Ti₄O₁₂ (CCTO) thin films were synthesized via a metal‐organic solution containing stoichiometric amounts of the metal cations at 700 °C for 1 h. The stable metal‐organic solution was prepared by dissolving calcium nitrate, copper nitrate, and tetrabuty titanate in grain alcohol. The phases, microstructures, and electric properties of CCTO thin films were characterized by X‐ray diffraction, scanning electron microscopy, atomic force microscope, and electric measurements. The results show that the CCTO thin films have homogeneous microstructure, smooth surface, low leakage current, and high values of dielectric constant. The low leakage current can be attributed to the small surface roughness. The high value of dielectric constant can be attributed to the internal barrier layer capacitor mechanism and metal‐insulator‐semiconductor junction of CCTO thin films. Copyright © 2013 John Wiley & Sons, Ltd.     

DSC of as-deposited thin films dip-coated on the substrate

The formation process of a ceramic (indium oxide) thin film (thickness: approximately 20 nm to several microns) was investigated by thermal analyses. Thermal changes of an organic precursor, indium(III) 2-ethylhexanoate, dip-coated on a glass substrate was successfully detected by DSC in air. Exothermic phenomena were observed at marked lower temperatures for the thin films than for the bulk material; thinner films had slightly lower peak temperatures. The reaction mechanism is discussed with reference to mass spectra of the evolved gases.     

CdS和CdSe薄膜的制备及其光电化学性质

本文采用简易的化学水浴沉积法和自牺牲模板法制备CdS、CdSe薄膜,对两种薄膜进行了XRD表征,比较了两种薄膜的紫外吸收光谱并研究了CdS、CdSe薄膜作为太阳能电池中的光阳极时所产生的光电流和光电压,对两种薄膜的电化学性能进行了比较.     

Influence of substrate nature on the growth of copper oxide thin films

Cu thin films were deposited on Si(111), glass, and quartz substrates by magnetron sputtering. X‐ray diffraction, SEM, and photoemission electron microscope studies were carried out to characterize the films. An influence of the nature of substrate on the Cu₂O and CuO phases formed was observed. Copper silicide formation in case of silicon substrates aided in formation of Cu₂O rather than CuO unlike glass and quartz substrates. Formation of nanocrystallites was observed by SEM and X‐ray diffraction. Copyright © 2016 John Wiley & Sons, Ltd.     

The effect of different gas atmospheres on the structure,morphology and photoluminescence properties of pulsed laser deposited Y3(Al,Ga)5O12:Ce3+ nano thin films

Luminescent properties of Y₃(Al,Ga)₅O₁₂:Ce³⁺ phosphor powder and thin films were obtained. The phosphor powder was used as target material for Pulsed Laser Deposition (PLD) of the thin films in the presence of different background gases. Excitation peaks for the powder were obtained at 439, 349, 225 and 189 nm and emission peaks at 512 and 565 nm. X-ray diffraction indicated that better crystallization took place for films deposited in a 20 mTorr O₂ atmosphere. Atomic force microscope revealed an RMS value of 0.7 nm, 2.5 nm and 4.8 nm for the films deposited in vacuum, O₂ and Ar atmospheres, respectively. The highest PL intensity was observed for films deposited in the O₂ atmosphere. A slight shift in the wavelength of the PL spectra was obtained for the thin films due to a change in the crystal field. The thickness of the films varied from 120 nm to 270 nm with films deposited in vacuum having the thin layer and those in Ar having the thick layer. The stoichiometry of the powder was maintained in the film during the deposition as confirmed by Rutherford backscattering spectroscopy.     

Surface structure and photoluminescence properties of AZO thin films on polymer substrates

Al‐doped zinc oxide (AZO) thin films were deposited on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputtering method at room temperature. The effects of film thickness on the surface structure and the photoluminescence properties of the films were investigated by atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS) and room temperature photoluminescence (PL). AFM analysis showed that the surface of all films was extremely flat and uniform at nanoscale. Root mean square (RMS) value of the surface roughness which scanned the surface area of 3 µm by 3 µm and grain size increased with increasing the film thickness. Thus, the surface morphology of the films became rough because of the coarse grains. The depth profile of AZO layers was analyzed by SIMS. It was found that the thickness of the AZO layer is almost same with the desired film thickness. The PL intensity of the dominant peak decreased and shifted slightly towards the shorter wavelengths with increasing the film thickness. According to the relationships between luminescence intensity and crystalline characteristics, it was observed that the intensity of the peak decreased by the increased surface area of the grains. Copyright © 2014 John Wiley & Sons, Ltd.     

The effect of Al2O3-coating coverage on the electrochemical properties in LiCoO2 thin films

The electrochemical properties of nanoscale Al₂O₃-coated LiCoO₂ thin films were examined as a function of the coating coverage. Al₂O₃-coated LiCoO₂ films showed enhanced cycle-life performance with increasing degree of coating coverage, which was attributed to the suppression of Co dissolution and F⁻ concentration in the electrolyte. Moreover, an Al₂O₃-coating layer with partial coverage clearly improved the electrochemical properties, even at 60 °C or with a water-contaminated electrolyte. Even though metal-oxide coating on LiCoO₂ has been actively investigated, the mechanisms of nanoscale coating have yet to be clearly identified. In this article, surface analysis suggested that the Al₂O₃-coating layer had transformed to an AlF₃ ∙3H₂O layer during cycling, which inhibited the generation of HF by scavenging H₂O molecules present in the electrolyte.     

基片温度对LiCoO2薄膜结构与电化学性能的影响

采用射频(RF)磁控溅射技术制备了用于全固态薄膜锂电池的非晶态和多晶LiCoO2阴极薄膜,利用XRD和SEM研究了沉积温度对LiCoO2薄膜结构和形貌的影响,并研究了高温退火后薄膜的电化学性能.研究结果表明,随著基片温度的不同,薄膜成分、表面形貌以及电化学行为有明显差异.室温沉积的薄膜很难消除薄膜中Li2CO3的影响,经过高温退火处理后也无法形成有效的多晶LiCoO2薄膜,而150℃沉积的薄膜经过高温退火后形成了有利于锂离子嵌入的多晶LiCoO2结构,薄膜显示出了较好的电化学性能.     

The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

Molecular dynamics simulations of La2O3 thin films on SiO2

Classical molecular dynamics is used to investigate the equilibrium state of the surface region and interface of heteroepitaxial La2O3 thin films.Due to the lattice mismatch,heteroepitaxial thin films are subject to very large stress.For this reason the behavior of La2O3 thin films at SiO2interface becomes an important concern.Our result indicates that La2O3 can uniformly wet SiO2 surface.The properties of the simulated films are analyzed and the lack of any discernible crystalline phase in epitaxial La2O3 on SiO2 indicates that the lattice mismatch between SiO2 and La2O3 is sufficiently large to prevent the formation of even short-range orders in La2O3 film.     

Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films

A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.     

Influence of pyridine-based ligands on photostability of MAPbI3 thin films

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Nanoscale structure and morphology of thin films of poly(2-chloroxylylene) synthesized by the CVD method on different liquids

Poly(2-chloroxylylene) (PCX) thin films are obtained on the surface of liquids with different density and surface tension values. Morphology of these films is different showing increasing roughness and hydrophobicity in correlation with aforementioned physical parameters. A detailed study by means of vibrational spectroscopy, XRD and TEM of the structure of PCX at the interface with the liquid is reported. The results here obtained prove the possibility to tailor the surface of thin solid films of PCX changing the liquid substrate thus addressing the surface functionalities.     

Investigation of molar concentration effect on structural,optical, electrical,and photovoltaic properties of spray‐coated Cu2O thin films

High quality copper oxide thin films were prepared by nebulizer spray pyrolysis technique using different concentrations of copper precursor solution. Concentration‐dependent structural, morphological, optical, and electrical properties of the prepared films are discussed. X‐ray diffraction studies done for the samples confirmed that the deposited films are in Cu₂O phase with polycrystalline cubic structure. Atomic force microscopy analysis revealed that all the films are composed of nano sheet shaped grains covering the substrate surface. Optical studies done on the samples showed band gap values 2.42, 2.31, and 2.02 eV for the solution concentration 0.01, 0.05, and 0.1 M, respectively. Photoluminescence spectral analysis showed the emission band at 620 nm confirming the formation of cuprous oxide. Electrical analysis of the films showed p‐type conductivity with a low resistivity 2.19 × 10² Ω.cm and high carrier concentration 16.76 × 10 ¹⁵ cm⁻³ for the molar concentration 0.1 M. In this work, Cu₂O/ZnO heterojunctions were also prepared, and solar cell properties were studied; they were found to show increased open circuit voltage and short circuit current for higher copper concentration.     

Effects of UV irradiation on tribological properties of nano‐TiO2 thin films

One‐layer and two‐layer nano‐TiO₂ thin films were prepared on the surface of common glass by sol–gel processing. Water contact angle, surface morphology, tribological properties of the films before and after ultraviolet (UV) irradiation were investigated using DSA100 drop shape analyzer, scanning probe microscopy (SPM), SEM and universal micro‐materials tester (second generation) (UMT‐2MT) friction and wear tester, respectively. The stored films markedly resumed their hydrophilicity after UV irradiation. But UV irradiation worsened tribological properties of the films. After the film was irradiated by UV, the friction coefficient between the film and GCr15 steel ball increased about 10–50% and its wear life shortened about 20–90%. Abrasive wear, brittle break and adherence wear are the failure mechanisms of nano‐TiO₂ thin films. It was believed that UV irradiation increased surface energy of the film and then aggravated adherence wear of the film at initial stage of friction process leading to severe brittle fracture and abrasive wear. Copyright © 2009 John Wiley & Sons, Ltd.     

Study of the optimal condition for electroplating of Bi2S3 thin films and their photoelectrochemical characteristics

Bismuth sulfide (Bi₂S₃) thin films were electrodeposited from non-aqueous dimethyl sulfoxide medium containing Bi(NO₃)₃ and thiourea as the precursor salts, triethanol amine as the complexing agent, and TritonX-100 as the surface active agent. The prepared films were subjected to rigorous experimentation in order to validate their potential candidature for solar cells. The films exhibited band gap energy of ∼1.3 eV and resistivity of the order of 2 × 10⁶ Ω cm at room temperature as was obtained from UV–Vis spectroscopy and four-probe measurements, respectively. Scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and energy dispersive analysis of X-ray were employed to reveal the morphology, structure, and chemical composition of the film matrix. The Bi₂S₃ films were found to be non-decomposable up to the temperature of 1,000 °C with the help of thermogravimetry–differential thermal analysis. The Nyquist and Mott–Schottky plots derived from electrochemical impedance spectroscopy measurements provided important information regarding electrical and semiconducting properties of the films. The n-type film with a donor density of the order of ∼10²³ m⁻³ displayed reasonable photoactivity under illumination and is recommended as a promising candidate for potential photoelectrochemical applications.     

Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4 at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24 W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4 S/cm to 15 S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4 at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.