Dual-Shelled RbLi(Li3SiO4)2:Eu2+@Al2O3@ODTMS Phosphor as a Stable Green Emitter for High-Power LED Backlights

The stability of luminescent materials is a key factor for the practical application in white light-emitting diodes (LEDs). Poor chemical stability of narrow-band green-emitting RbLi(Li₃SiO₄)₂:Eu²⁺ (RLSO:Eu²⁺) phosphor hinders their further commercialization even if they have excellent stability against thermal quenching. Herein, we propose an efficient protection scheme by combining the surface coating of amorphous Al₂O₃ and hydrophobic modification by octadecyltrimethoxysilane (ODTMS) to construct the moisture-resistant dual-shelled RLSO:Eu²⁺@Al₂O₃@ODTMS composite. The growth mechanisms of both the Al₂O₃ inorganic layer and the silane organic layer on the phosphor surface are investigated. The results remarkably improve the water-stability of this narrow-band green emitter. The evaluation of the white LED by employing this composite as the green component demonstrates that RLSO:Eu²⁺@Al₂O₃@ODTMS is a promising candidate for the high-performance display backlights, and this dual-shelled strategy provides an alternative method to improve the moisture-resistant property of humidity-sensitive phosphors.     

Learning from a Mineral Structure toward an Ultra‐Narrow‐Band Blue‐Emitting Silicate Phosphor RbNa3(Li3SiO4)4:Eu2+

Learning from natural mineral structures is an efficient way to develop potential host lattices for applications in phosphor converted (pc)LEDs. A narrow‐band blue‐emitting silicate phosphor, RbNa₃(Li₃SiO₄)₄:Eu²⁺ (RNLSO:Eu²⁺), was derived from the UCr₄C₄‐type mineral model. The broad excitation spectrum (320–440 nm) indicates this phosphor can be well matched with the near ultraviolet (n‐UV) LED chip. Owing to the UCr₄C₄‐type highly condensed and rigid framework, RNLSO:Eu²⁺ exhibits an extremely small Stokes shift and an unprecedented ultra‐narrow (full‐width at half‐maximum, FWHM=22.4 nm) blue emission band (λ_em=471 nm) as well as excellent thermal stability (96 %@150 °C of the initial integrated intensity at 25 °C). The color gamut of the as‐fabricated (pc)LEDs is 75 % NTSC for the application in liquid crystal displays from the prototype design of an n‐UV LED chip and the narrow‐band RNLSO:Eu²⁺ (blue), β‐SiAlON:Eu²⁺ (green), and K₂SiF₆:Mn⁴⁺ (red) components as RGB emitters.     

Sr2SiO4:Eu3+发光材料的制备及其光谱特性

采用溶胶-凝胶法制备了Sr2SiO4:Eu3+发光材料. 测量了Sr2SiO4:Eu3+材料的激发与发射光谱, 发射光谱主峰位于618 nm处;监测618 nm发射峰时, 所得激发光谱主峰分别为320、397、464 和518 nm. 研究了Sr2SiO4:Eu3+材料在618 nm的主发射峰强度随Eu3+浓度的变化情况. 结果显示, 随Eu3+浓度的增大, 发射峰强度先增大; 当Eu3+浓度为7%时(x), 峰值强度最大; 而后随Eu3+浓度的增大, 峰值强度减小. 在Eu3+浓度为7%的情况下, 研究了电荷补偿剂Li+的掺杂浓度(x(Li+))对Sr2SiO4:Eu3+材料发射光谱强度的影响. 结果显示, 随x(Li+)的增大, 材料发射光谱强度先增大后减小, 当x(Li+)为8%时, 峰值强度最大.     

Eu2+ & Mn2+‐Coactivated Ba3Gd(PO4)3 Orange‐Yellow‐Emitting Phosphor with Tunable Color Tone for UV‐Excited White LEDs

A novel orange‐yellow‐emitting Ba₃Gd(PO₄)₃:x Eu²⁺,y Mn²⁺ phosphor is prepared by high‐temperature solid‐state reaction. The crystal structure of Ba₃Gd(PO₄)₃:0.005 Eu²⁺,0.04 Mn²⁺ is determined by Rietveld refinement analysis on powder X‐ray diffraction data, which shows that the cations are disordered on a single crystallographic site and the oxygen atoms are distributed over two partially occupied sites. The photoluminescence excitation spectra show that the developed phosphor has an efficient broad absorption band ranging from 230 to 420 nm, perfectly matching the characteristic emission of UV‐light emitting diode (LED) chips. The emission spectra show that the obtained phosphors possess tunable color emissions from yellowish‐green through yellow and ultimately to reddish‐orange by simply adjusting the Mn²⁺ content (y) in Ba₃Gd(PO₄)₃:0.005 Eu²⁺,y Mn²⁺ host. The tunable color emissions origin from the change in intensity between the 4f–5d transitions in the Eu²⁺ ions and the ⁴T₁‐⁶A₁ transitions of the Mn²⁺ ions through the energy transfer from the Eu²⁺ to the Mn²⁺ ions. In addition, the mechanism of the energy transfer between the Eu²⁺ and Mn²⁺ ions are also studied in terms of the Inokuti–Hirayama theoretical model. The present results indicate that this novel orange‐yellow‐emitting phosphor can be used as a potential candidate for the application in white LEDs.     

Tailoring of Deep‐Red Luminescence in Ca2SiO4:Eu2+

We report a new dicalcium silicate phosphor, Ca_2?xEu_xSiO₄, which emits red light in response to blue‐light excitation. When excited at 450 nm, deep‐red emission at 650 nm was clearly observed in Ca_1.2Eu_0.8SiO₄, the external and internal quantum efficiencies of which were 44 % and 50 %, respectively. The red emission from Ca_2?xEu_xSiO₄ was strongly related to the peculiar coordination environments of Eu²⁺ in two types of Ca sites. The red‐emitting Ca₂SiO₄:Eu²⁺ phosphors are promising materials for next‐generation, white‐light‐emitting diode applications.     

白光LED用红色发射荧光粉Gd2(MoO4)3:Eu3+制备与表征

以NH4F为助熔剂采用固相反应法合成了Eu^3＋掺杂的α—Gd2（MoO4）3荧光粉。研究了引入不同含量助熔剂时对材料的结晶、荧光粉颗粒粒径、表面形貌及光谱性质的影响。实验结果表明,引入重量比为3％时样品具有好的结晶和优良的光谱性质;同时,随着助熔剂量的增加Eu^3＋离子在晶体中所处的格位对称性发生了变化;另外,通过Eu^3＋掺杂浓度变化的结果讨论了Eu^3＋的浓度猝灭行为。光谱测量的结果表明,该荧光粉与其他商品荧光粉不同,其最有效的激发波长不在电荷迁移带范围,而是465和395nm跃迁,该荧光粉可作为近紫外LED和三基色荧光粉组合型自光器件的红色荧光粉的候选材料。     

Synthesis,Structure, and Photoluminescence Properties of Novel KBaSc2(PO4)3:Ce3+/Eu2+/Tb3+ Phosphors for White‐Light‐Emitting Diodes

A series of novel KBaSc₂(PO₄)₃:Ce³⁺/Eu²⁺/Tb³⁺phosphors are prepared using a solid‐state reaction. X‐ray diffraction analysis and Rietveld structure refinement are used to check the phase purity and crystal structure of the prepared samples. Ce³⁺‐ and Eu²⁺‐doped phosphors both have broad excitation and emission bands, owing to the spin‐ and orbital‐allowed electron transition between the 4f and 5d energy levels. By co‐doping the KBaSc₂(PO₄)₃:Eu²⁺ and KBaSc₂(PO₄)₃:Ce³⁺ phosphors with Tb³⁺ ions, tunable colors from blue to green can be obtained. The critical distance between the Eu²⁺ and Tb³⁺ ions is calculated by a concentration quenching method and the energy‐transfer mechanism for Eu²⁺→Tb³⁺ is studied by utilizing the Inokuti–Hirayama model. In addition, the quantum efficiencies of the prepared samples are measured. The results indicate that KBaSc₂(PO₄)₃:Eu²⁺,Tb³⁺ and KBaSc₂(PO₄)₃:Ce³⁺,Tb³⁺ phosphors might have potential applications in UV‐excited white‐light‐emitting diodes.     

Improvement of the Water Resistance of a Narrow‐Band Red‐Emitting SrLiAl3N4:Eu2+ Phosphor Synthesized under High Isostatic Pressure through Coating with an Organosilica Layer

A SrLiAl₃N₄:Eu²⁺ (SLA) red phosphor prepared through a high‐pressure solid‐state reaction was coated with an organosilica layer with a thickness of 400–600 nm to improve its water resistance. The observed 4f⁶5d→4f⁷ transition bands are thought to result from the existence of Eu²⁺ at two different Sr²⁺ sites. Luminescence spectra at 10 K revealed two zero‐phonon lines at 15377 (for Eu(Sr1)) and 15780 cm^?1 (for Eu(Sr2)). The phosphor exhibited stable red emission under high pressure up to 312 kbar. The configurational coordinate diagram gave a theoretical explanation for the Eu^2+/3+ result. The coated samples showed excellent moisture resistance while retaining an external quantum efficiency (EQE) of 70 % of their initial EQE after aging for 5 days under harsh conditions. White‐light‐emitting diodes of the SLA red phosphor and a commercial Y₃Al₅O₁₂:Ce³⁺ yellow phosphor on a blue InGaN chip showed high color rendition (CRI=89, R9=69) and a low correlated color temperature of 2406 K.     

Strong f‐f Excitation and Bright Red Emission in Cd4Gd1‐xEuxO(BO3)3 (0≤x≤1): Near‐UV LED Pumped Red Phosphor with Low Thermal Quenching

Searching efficient red phosphors under near‐UV or blue light excitation is practically important to improve the current white light‐emitting diodes (WLEDs). Eu²⁺‐ and Mn⁴⁺‐based red phosphors have been extensively studied. Here we proposed that Eu³⁺ is also a promising activator when it resides on a noncentrosymmetric coordination site. We proved that Cd₄GdO(BO₃)₃ is a good host, which has a significantly distorted coordination for Eu³⁺. A careful crystallographic study was performed on the solid solutions of Cd₄Gd_1‐xEu_xO(BO₃)₃ (0≤x≤1) by Rietveld refinements. The as‐doped Eu³⁺ cations locate at the Gd³⁺ site and are well separated by CdO₈, CdO₆ and BO₃ groups; thus, only a slight concentration quenching was observed at ≈80 atom % Eu³⁺. Most importantly, the parity‐forbidden law of 4f‐4f transitions for Eu³⁺ are severely depressed, thus the absorptions at ≈393 and ≈465 nm are remarkable. Cd₄Gd_0.2Eu_0.8O(BO₃)₃ can be pumped by a 395 nm LED chip to give a bright red emission, and when mixed with other commercial blue and green phosphors, it can emit the proper white light (0.3657, 0.3613) with a suitable R_a≈87 and correlated colour temperature ≈4326 K. In‐situ photoluminescence study indicated the low thermal quenching of these borate phosphors, especially under 465 nm excitation. Our case proves the practicability to develop near‐UV excited red phosphors in rare‐earth‐containing borates.     

Site‐Selective Occupancy of Eu2+ Toward Blue‐Light‐Excited Red Emission in a Rb3YSi2O7:Eu Phosphor

Establishing an effective design principle in solid‐state materials for a blue‐light‐excited Eu²⁺‐doped red‐emitting oxide‐based phosphors remains one of the significant challenges for white light‐emitting diodes (WLEDs). Selective occupation of Eu²⁺ in inorganic polyhedra with small coordination numbers results in broad‐band red emission as a result of enhanced crystal‐field splitting of 5d levels. Rb₃YSi₂O₇:Eu exhibits a broad emission band at λ_max=622 nm under 450 nm excitation, and structural analysis and DFT calculations support the concept that Eu²⁺ ions preferably occupy RbO₆ and YO₆ polyhedra and show the characteristic red emission band of Eu²⁺. The excellent thermal quenching resistance, high color‐rendering index R_a (93), and low CCT (4013 K) of the WLEDs clearly demonstrate that site engineering of rare‐earth phosphors is an effective strategy to target tailored optical performance.     

Li3PO4‐Coated LiNi0.5Mn1.5O4: A Stable High‐Voltage Cathode Material for Lithium‐Ion Batteries

LiNi_0.5Mn_1.5O₄ is regarded as a promising cathode material to increase the energy density of lithium‐ion batteries due to the high discharge voltage (ca. 4.7 V). However, the interface between the LiNi_0.5Mn_1.5O₄ cathode and the electrolyte is a great concern because of the decomposition of the electrolyte on the cathode surface at high operational potentials. To build a stable and functional protecting layer of Li₃PO₄ on LiNi_0.5Mn_1.5O₄ to avoid direct contact between the active materials and the electrolyte is the emphasis of this study. Li₃PO₄‐coated LiNi_0.5Mn_1.5O₄ is prepared by a solid‐state reaction and noncoated LiNi_0.5Mn_1.5O₄ is prepared by the same method as a control. The materials are fully characterized by XRD, FT‐IR, and high‐resolution TEM. TEM shows that the Li₃PO₄ layer (<6 nm) is successfully coated on the LiNi_0.5Mn_1.5O₄ primary particles. XRD and FT‐IR reveal that the synthesized Li₃PO₄‐coated LiNi_0.5Mn_1.5O₄ has a cubic spinel structure with a space group of Fd$\bar 3$ m, whereas noncoated LiNi_0.5Mn_1.5O₄ shows a cubic spinel structure with a space group of P4₃32. The electrochemical performance of the prepared materials is characterized in half and full cells. Li₃PO₄‐coated LiNi_0.5Mn_1.5O₄ shows dramatically enhanced cycling performance compared with noncoated LiNi_0.5Mn_1.5O₄.     

High‐dimensional Polyoxoniobates Constructed from Lanthanide‐incorporated High‐nuclear {[Ln(H2O)4]3[Nb24O69(H2O)3]2} Secondary Building Units

In this work, two rare high‐dimensional polyoxoniobates with formulas of H₉[Cu(en)(H₂O)₂][Cu(en)₂]₈[Dy(H₂O)₄]₃[Nb₂₄‐O₆₉(H₂O)₃]₂ ? 36H₂O ( 1 ) and H₉K[Cu(en)₂(H₂O)]₅[Cu(en)₂]₄‐[Eu(H₂O)₄]₃[Nb₂₄O₆₉(H₂O)₃]₂ ? 2en ? 45H₂O ( 2 ) have been obtained under hydrothermal conditions. These extended materials are constructed from lanthanide‐incorporated triangular‐prism‐like polyoxoniobate secondary building units (SBUs) {[Ln(H₂O)₄]₃[Nb₂₄O₆₉(H₂O)₃]₂} (Ln=Dy, Eu). 1 and 2 represent the first examples of high‐dimensional polyoxometalate materials based on such lanthanide‐incorporated triangular‐prism‐like polyoxoniobate SBUs. Furthermore, the proton conduction property and the luminescent emission of these materials were evaluated.     

Ca10(Si2O7)3Cl2:Eu2+Mn2+单-基质白光荧光粉的发光性质

用高温固相法合成了颜色可调的Ca10(Si2O7)3Cl2:Eu2+Mn2+荧光粉.研究了它的发光性质和Eu2+与Mn2+之间的能量传递.Eu2+离子在Ca10(Si2O7)3Cl2晶体中形成了峰值为426 nm和523 nm的5d→4f跃迁发光,Eu2+中心向Mn2+中心传递能量,敏化Mn2+离子4T1(4G)-6A1(6S)跃迁而产生585 nm的黄光发射.黄绿蓝3个发射带叠加在单一基质中实现了白光发射.3个发射带的激发谱范围位于250-480 nm处,Ca10(Si2O7)3Cl2:Eu2+Mn2+在紫外-近紫外波段(350～410 nm)范围内有很强的激发,是一种适合InGaN管芯激发的单一基质白光LED荧光粉.     

Intense Upconversion Luminescence of CaSc2O4:Ho3+/Yb3+ from Large Absorption Cross Section and Energy‐Transfer Rate of Yb3+

Concentration‐optimized CaSc₂O₄:0.2 % Ho³⁺/10 % Yb³⁺ shows stronger upconversion luminescence (UCL) than a typical concentration‐optimized upconverting phosphor Y₂O₃:0.2 % Ho³⁺/10 % Yb³⁺ upon excitation with a 980 nm laser diode pump. The ⁵F₄+⁵S₂→⁵I₈ green UCL around 545 nm and ⁵F₅→⁵I₈ red UCL around 660 nm of Ho³⁺ are enhanced by factors of 2.6 and 1.6, respectively. On analyzing the emission spectra and decay curves of Yb³⁺: ²F_5/2→²F_7/2 and Ho³⁺: ⁵I₆→⁵I₈, respectively, in the two hosts, we reveal that Yb³⁺ in CaSc₂O₄ exhibits a larger absorption cross section at 980 nm and subsequent larger Yb³⁺: ²F_5/2→Ho³⁺: ⁵I₆ energy‐transfer coefficient (8.55×10^?17 cm³ s^?1) compared to that (4.63×10^?17 cm³ s^?1) in Y₂O₃, indicating that CaSc₂O₄:Ho³⁺/Yb³⁺ is an excellent oxide upconverting material for achieving intense UCL.     

Photo and Thermo‐luminescence Properties of Mn4+, Ce4+ and Sm3+ in MgAl2Si2O8 Phosphor

Mn⁴⁺, Ce⁴⁺ and Sm³⁺ doped MgAl₂Si₂O₈‐based phosphors were synthesized at 1300 °C by solid state reaction and characterized by thermogravimetry (TG), differential thermal analysis (DTA), X‐ray powder diffraction (XRD), photoluminescence (PL), thermoluminescence (TL) and scanning electron microscopy (SEM). The phosphors showed broad red emission bands in the range of 610–715 nm and different maximum intensity when activated by UV illumination. Such a red emission can be attributed to the intrinsic ²E→⁴A₂ transitions of Mn⁴⁺.     

Eu2+/Mn2+激活的M3MgSi2O8-M2SiO4(M=Ba,Ca)荧光粉的发光特性

采用高温固相法制备了Eu2+/Mn2+单激活和共激活的M3MgSi2O8-M2SiO4(M=Ba,Ca)两相荧光粉.通过X射线衍射(XRD)和荧光光谱(PL)对样品材料的晶体结构和光谱性能进行了表征.XRD测试结果表明所合成的样品具有M3MgSi2O8和M2SiO4两种晶相结构.PL测试显示,Eu2+在Ba3MgSi2O8-Ba2SiO4体系中发射442和502nm两个波带的光;而Eu2+在Ca2+部分取代Ba2+的BaCa2MgSi2O8-Ba1.31Ca0.69SiO4体系中发射420～520nm的连续波带,并且激发光谱向长波扩展,更加适用于被InGaN芯片(395 nm)激发.通过改变Mn2+的掺杂量可制得颜色可调的BaCa2MgSi2O8-Ba1.31Ca0.69SiO4:Eu2+,Mn2+白光荧光粉.     

LED用Sr(1-1.5x)Mo0.8Si0.2O3.8:Eu3+x红色荧光粉的制备及其荧光性能

通过高温固相法合成了LED用红色荧光粉Sr(1-1.5x)Mo0.8Si0.2O3.8∶Eu3+x（x=0.1,0.2,0.3,0.4,0.5）。 通过XRD、激发光谱和发射光谱测试了材料的物相组成以及发光性能。 x=0.1样品的XRD谱与JCPDS 08-0482(SrMoO4)的标准卡片相同。 Eu3+代替晶格中Sr2+的位置成为发光中心。 随着Eu3+含量x的增加,593 nm处的5D0-7F1跃迁和614 nm处的5D0-7F2跃迁发射强度会相互转换：当x≤0.4时,以磁偶极5D0-7F1跃迁为主,发射橙色光;而当x=0.5时,以电偶极5D0-7F2跃迁发射为主,发射红光。 可能是过量掺杂的Eu3+离子,只能存在于晶格空位形成缺陷,无法占据SrMoO4中Sr2+的格位中,Eu3+在晶格中占据非对称中心的格位,导致电偶极跃迁变成允许跃迁,从而增加了5D0-7F2跃迁,减弱了5D0-7F1跃迁。 因此,可以通过调节激活剂的含量获得不同发光色的荧光粉。 Eu3+掺杂的硅钼酸锶体系,614 nm激发下,在368 nm处出现宽的基质吸收峰和467 nm处7F0-5D2的跃迁峰,且这2处的吸收峰在x=0.5时比x=0.4时强3倍左右。 材料能非常好的吸收368 nm波长的光,产生颜色可调的橙红色。 与近紫外光LED芯片匹配良好。     

Synthesis and Photoluminescence Properties of the Red‐Emitting Phosphor Mg3(BN2)N Doped with Eu2+

Mg₃(BN₂)N was prepared by solid state metathesis reactions and several europium (Eu²⁺) doped samples were prepared to discover novel red‐emitting photoluminescent (PL) materials. It turned out that the undoped and doped samples showed very broad deep‐red photoluminescence ranging from about 500 nm into the near infrared. Due to the similar spectra of the undoped and doped samples and unusually high FWHM values of about 5780 cm^–1 we conclude that the luminescence process originates from defect sites. This was confirmed by decay measurements which show that the decay constants for all samples were in the range of several milliseconds.