Highly Converged Valence Bands and Ultralow Lattice Thermal Conductivity for High-Performance SnTe Thermoelectrics

A two-step optimization strategy is used to improve the thermoelectric performance of SnTe via modulating the electronic structure and phonon transport. The electrical transport of self-compensated SnTe (that is, Sn_1.03Te) was first optimized by Ag doping, which resulted in an optimized carrier concentration. Subsequently, Mn doping in Sn_1.03−xAg_xTe resulted in highly converged valence bands, which improved the Seebeck coefficient. The energy gap between the light and heavy hole bands, i.e. ΔE_v decreases to 0.10 eV in Sn_0.83Ag_0.03Mn_0.17Te compared to the value of 0.35 eV in pristine SnTe. As a result, a high power factor of ca. 24.8 μW cm⁻¹ K⁻² at 816 K in Sn_0.83Ag_0.03Mn_0.17Te was attained. The lattice thermal conductivity of Sn_0.83Ag_0.03Mn_0.17Te reached to an ultralow value (ca. 0.3 W m⁻¹ K⁻¹) at 865 K, owing to the formation of Ag₇Te₄ nanoprecipitates in SnTe matrix. A high thermoelectric figure of merit (z T≈1.45 at 865 K) was obtained in Sn_0.83Ag_0.03Mn_0.17Te.     

Soft Phonon Modes Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe

Crystalline solids with intrinsically low lattice thermal conductivity (κ_L) are crucial to realizing high‐performance thermoelectric (TE) materials. Herein, we show an ultralow κ_L of 0.35 Wm^?1 K^?1 in AgCuTe, which has a remarkable TE figure‐of‐merit, zT of 1.6 at 670 K when alloyed with 10 mol % Se. First‐principles DFT calculation reveals several soft phonon modes in its room‐temperature hexagonal phase, which are also evident from low‐temperature heat‐capacity measurement. These phonon modes, dominated by Ag vibrations, soften further with temperature giving a dynamic cation disorder and driving the superionic transition. Intrinsic factors cause an ultralow κ_L in the room‐temperature hexagonal phase, while the dynamic disorder of Ag/Cu cations leads to reduced phonon frequencies and mean free paths in the high‐temperature rocksalt phase. Despite the cation disorder at elevated temperatures, the crystalline conduits of the rigid anion sublattice give a high power factor.     

Concerted Rattling in CsAg5Te3 Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance

Thermoelectric (TE) materials convert heat energy directly into electricity, and introducing new materials with high conversion efficiency is a great challenge because of the rare combination of interdependent electrical and thermal transport properties required to be present in a single material. The TE efficiency is defined by the figure of merit ZT=(S²σ) T/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity, and T is the absolute temperature. A new p‐type thermoelectric material, CsAg₅Te₃, is presented that exhibits ultralow lattice thermal conductivity (ca. 0.18 Wm^?1 K^?1) and a high figure of merit of about 1.5 at 727 K. The lattice thermal conductivity is the lowest among state‐of‐the‐art thermoelectrics; it is attributed to a previously unrecognized phonon scattering mechanism that involves the concerted rattling of a group of Ag ions that strongly raises the Grüneisen parameters of the material.     

Excellent Room-Temperature Thermoelectricity of 2D GeP3: Mexican-Hat-Shaped Band Dispersion and Ultralow Lattice Thermal Conductivity

Although some atomically thin 2D semiconductors have been found to possess good thermoelectric performance due to the quantum confinement effect, most of their behaviors occur at a higher temperature. Searching for promising thermoelectric materials at room temperature is meaningful and challenging. Inspired by the finding of moderate band gap and high carrier mobility in monolayer GeP_3, we investigated the thermoelectric properties by using semi-classical Boltzmann transport theory and first-principles calculations. The results show that the room-temperature lattice thermal conductivity of monolayer GeP₃ is only 0.43 Wm⁻¹K⁻¹ because of the low group velocity and the strong anharmonic phonon scattering resulting from the disordered phonon vibrations with out-of-plane and in-plane directions. Simultaneously, the Mexican-hat-shaped dispersion and the orbital degeneracy of the valence bands result in a large p-type power factor. Combining this superior power factor with the ultralow lattice thermal conductivity, a high p-type thermoelectric figure of merit of 3.33 is achieved with a moderate carrier concentration at 300 K. The present work highlights the potential applications of 2D GeP₃ as an excellent room-temperature thermoelectric material.     

Intrinsically Low Thermal Conductivity and High Carrier Mobility in Dual Topological Quantum Material,n‐Type BiTe

A challenge in thermoelectrics is to achieve intrinsically low thermal conductivity in crystalline solids while maintaining a high carrier mobility (μ). Topological quantum materials, such as the topological insulator (TI) or topological crystalline insulator (TCI) can exhibit high μ. Weak topological insulators (WTI) are of interest because of their layered hetero‐structural nature which has a low lattice thermal conductivity (κ_lat). BiTe, a unique member of the (Bi₂)_m(Bi₂Te₃)_n homologous series (m:n=1:2), has both the quantum states, TCI and WTI, which is distinct from the conventional strong TI, Bi₂Te₃ (where m:n=0:1). Herein, we report intrinsically low κ_lat of 0.47–0.8 W m^?1 K^?1 in the 300–650 K range in BiTe resulting from low energy optical phonon branches which originate primarily from the localized vibrations of Bi bilayer. It has high μ≈516 cm² V^?1 s^?1 and 707 cm² V^?1 s^?1 along parallel and perpendicular to the spark plasma sintering (SPS) directions, respectively, at room temperature.