脉冲激光沉积无氢钨掺杂类金刚石膜的摩擦与机械性能

采用脉冲激光沉积技术制备出无氢钨掺杂非晶态类金刚石膜.膜中的钨含量与靶材中的钨含量保持稳定的线性关系,显示了脉冲激光沉积在难熔金属掺杂技术方面的亮点.由于碳-钨结构的形成和表面粗糙度影响,膜层的干摩擦系数随着钨含量的增加显现出先减后增的趋势,钨含量为9.67 at.％时达到最低值0.091.钨含量的增大降低了类金刚石膜...     

Investigation on the properties of high reflective mirror prepared by ion-beam sputtering

The single-sided and dual-sided high reflective mirrors were deposited with ion-beam sputtering (IBS).When the incident light entered with 45°, the reflectance of p-polarized light at 1064 nm exceeded 99.5%.Spectrum was gained by spectrometer and weak absorption of coatings was measured by surface thermal lensing (STL) technique. Laser-induced damage threshold (LIDT) was determined and the damage morphology was observed with Lecia-DMRXE microscope simultaneously. The profile of coatings was measured with Mark Ⅲ-GPI digital interferometer. It was found that the reflectivity of mirror exceeded 99.9% and its absorption was as low as 14 ppm. The reflective bandwidth of the dual-sided sample was about 43 nm wider than that of single-sided sample, and its LIDT was as high as 28 J/cm2, which was 5 J/cm2 higher than that of single-sided sample. Moreover, the profile of dual-sided sample was better than that of substrate without coatings.     

比较2种溅射方法镀制的氧化硅薄膜

比较了磁控反应溅射(RMS)法与离子束反应溅射(RIBS)法沉积得到的氧化硅薄膜的光学特性,并确定了其对折射率n、消光系数k、沉积速率和混合工作气体Ar/O2中氧含量的依赖性关系。工作气体中O2含量大于15%时通过RMS法沉积的氧化硅薄膜在0.63μm波长折射率约为1.52~1.55,消光系数低于10-5。当O2含量在80%以上时RIBS方法沉积氧化硅薄膜的折射率n=1.52~1.6,消光系数低于10-5。用RMS沉积SiO2薄膜,当氧气量超过15%时发生反应模式,此时沉积速率下降近5倍。而用RIBS时,沉积速率并不依赖氧气在混合工作气体中的含量。     

射频反应磁控溅射法制备的氟化类金刚石薄膜摩擦特性研究

以高纯石墨做靶,CHF3和Ar气为源气体,采用射频反应磁控溅射法在不同流量比条件下制备了氟化类金刚石(F-DLC)薄膜.利用原子力显微镜、纳米压痕仪、拉曼光谱和红外光谱、摩擦磨损测试仪对薄膜的表面形貌、硬度、键结构以及摩擦性能做了具体分析.表面形貌测试结果表明,制备的薄膜整体均匀致密,表现出了良好的减摩性能.当CHF3与Ar气流量比r为1:6时,所得薄膜的摩擦系数减小至0.42,而纳米压痕结果显示,此时薄膜的硬度也最高.拉曼和红外光谱显示,随着r的增加,薄膜中的F浓度呈上升趋势,薄膜中的芳香环比例减小.研究表明,F原子的键入方式是影响F-DLC薄膜摩擦系数的一个重要因素,CF2反对称伸缩振动强度的减弱和CC中适量碳氢氟键的形成都能导致薄膜具有相对较低的摩擦系数.     

Effect of deposition voltage on the field emission properties of electrodeposited diamond-like carbon films

Diamond-like carbon (DLC) films were deposited on Al substrates by electrodeposition technique under various voltages. The surface morphology and compositions of synthesized films were characterized by scanning electron microscopy and Raman spectroscopy. With the increase of deposition voltage, the sp² phase concentration decreased and the surface morphology changed dramatically. The influence of deposition voltage on the field electron emission (FEE) properties of DLC films was not monotonic due to two adverse effects of deposition voltage on the surface morphology and compositions. The DLC film deposited under 1200 V exhibited optimum FEE property, including a lowest threshold field of 13 V/μm and a largest emission current density of 904.8 μA/cm² at 23.5 V/μm.     

Laser fluence dependence of the elastic properties of diamond-like carbon films prepared by pulsed-laser deposition

We studied the temperature dependence of internal friction of variety of amorphous diamond-like carbon films prepared by pulsed-laser deposition. Like the most of amorphous solids, the internal friction below 10 K exhibits a temperature independent plateau, which is caused by the atomic tunnelling states—a measure of structure disorder. In this work, we have varied the concentration of sp³ versus sp² carbon atoms by increasing laser fluence from 1.5 to 30 J/cm². Our results show that the internal friction has a nonmonotonic dependence on sp³/sp² ratio with the values of the internal friction plateaus varying between 6×10⁻⁵ and 1.1×10⁻⁴. We explain our findings as a result of a possible competition between the increase of atomic bonding and the increase of internal strain in the films, both of which are important in determining the tunneling states in amorphous solids. The importance of the internal strain in diamond-like carbon films is consistent with our previous study on laser fluence, doping, and annealing, which we will review as well. In contrast, no significant dependence of laser fluence is found in shear moduli of the films, which vary between 220 and 250 GPa.     

Chemical purity of diamond-like films produced by ion-beam deposition

Secondary-ion mass spectrometry is applied to determine the elemental composition of thin diamond-like films produced on silicon substrates by high-vacuum deposition from ion beams. Qualitative analysis and comparison of the results with the data gained for graphite and pyrocarbon standard samples indicate a high chemical purity for the diamond-like coatings obtained.     

离子束溅射和离子辅助淀积DWDM滤光片的膜厚均匀性

用离子束溅射和离子辅助淀积技术制备DWDM滤光片的关键问题是必须获得优良的膜层厚度均匀性。采用实验修正膜层厚度修正板的办法获得了较好的均匀性分布 ,给出了实验配置、实验方法和实验结果 ,并对实验结果作了分析讨论     

反应磁控溅射法制备的氟化类金刚石薄膜的XPS结构研究

采用射频反应磁控溅射法用高纯石墨作靶、三氟甲烷(CHF₃)和氩气(Ar)作源气体制 备了氟化类金刚石（FDLC）薄膜，通过XPS光谱结合拉曼光谱、红外透射光谱和紫外 可见光光谱研究了源气体流量比等工艺条件对薄膜中键结构、sp2/sp3杂化比以及光学带隙等性能的影响.结果表明在低功率(60W)、高气压(2.0Pa)和适当的流量比(Ar/CHF₃=2∶ 1)下利用射频反应磁控溅射法可制备出氟含量高且具有较宽光学带隙和超低介电常数的FDLC薄膜. 关键词： 反应磁控溅射 氟化类金刚石薄膜 红外透射光谱 XPS光谱     

Short-pulse laser deposition of diamond-like carbon thin films

The high intensities present in and the non-thermal nature of ultrashort-pulse laser ablation provide a nearly ideal source for thin-film deposition. The high kinetic energies and high ion content in the ablation plume suggest that it would be useful for the creation of diamond thin films. We used a 120 fs, 3 W, 1 kHz laser to ablate a graphite target and characterized the resulting films. We were able to grow amorphous films of up to 18 7m thick and free from graphite particulates with no annealing necessary and at rates up to 25 7m/hr. The films had 40-50% sp³ bonds as measured by using EELS and had properties typical of PLD-generated diamond-like carbon films.     

Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射     

热沉积法制备纳米二硫化钼薄膜及其光电特性研究

以M oS2粉末为原料,以氩气为携载气体,在400～600℃温度范围内利用热蒸发方法在硅衬底表面制备了不同厚度的M oS2薄膜．利用X射线衍射和扫描电子显微镜分析了M oS2薄膜的结构和表面形貌,发现M oS2薄膜由多晶M oS2粒子组成,颗粒均匀,平均纳米颗粒尺寸约为60 nm ．利用紫外可见光光谱仪测量了其吸收特性,发现样品在720 nm附近有很强的吸收．应用霍尔效应和伏安法研究了M oS2/Si样品的接触特性和电子的运输特性,发现该异质结具有良好的整流特性,即正向电压下电流随电压呈指数增长,而在反向偏压下漏电流很小,电子迁移率可达到6．730×102 cm2/（V · s）．实验结果表明MoS2薄膜具有良好的电学特性,可用来制备晶体管和集成电路等器件．     

离子束反应溅射沉积SiO2薄膜的光学特性

 主要研究采用离子束反应溅射（RIBS）制备SiO2薄膜的折射率、消光系数、化学计量比与氧气在氩氧混合工作气体中含量及其沉积速率的关系。研究结果表明：RIBS制备的SiO2薄膜在0.63 μm处折射率n= 1.48,消光系数小于10-5;随着沉积速率的增加,薄膜的折射率和消光系数随之变大,当沉积速率超过0.3 nm/s,即使是在纯氧环境溅射,折射率值也不低于1.5;通过对红外透射光谱的主吸收峰位置研究得到沉积的SiO2薄膜为缺氧型,化学计量比不超过1.8,且红外吸收峰位置和SiO2折射率存在对应关系,因此在不加热衬底情况下使用RIBS制备SiO2薄膜时,会限制沉积速率的提高。     

Dual ion-beam sputtering deposition of palladium-fluoropolymer nano-composites

The morphological (TEM) and chemical (XPS, ARXPS) characterizations of fluoropolymer films modified with palladium particles (CF_x(Pd)) are reported in this article. The films, which have different levels of metal content, have been deposited by ion beam co-sputtering a Teflon target and a palladium one. Composite films with a thickness of a few nanometers have also been deposited and analyzed. For all degrees of thickness, the analyses show the fluoropolymer nature of the hosting material, the nanoscopic character of metal domains, and their uniform distribution in the polymer matrix. The likely application of this ion sputter-deposited material in the sensor field has also been preliminary tested. PACS 81.05.Qk; 82.35.Np; 81.15.Cd; 79.60.Fr; 07.07.Df     

Ascent of open-circuit voltage on diamond-like carbon photovoltaic cell by infrared heating-assisted pulsed-laser deposition

Phosphorus-doped diamond-like carbon (DLC) films were deposited on quartz and p-type silicon (p-Si) substrates by pulsed-laser deposition. Open-circuit voltage (V _oc) and short-circuit density (I _sc/cm²) from a heating process converted from one type of electrode to another and the two types of electrode pattern are shown by the V–I characteristics. The first heating process was by a ceramic heater, and the other was by an infrared heater. We adopted two electrode patterns, from a bipectinate electrode and a plot pattern electrode, to measure electric photovoltaic characteristics. We were able to upgrade V _oc and I _sc/cm² to 35∼45 mV, and 0.24 μA/cm², respectively, under infrared heating. V _oc by the plot pattern electrode was over 2 V under infrared heating and ceramic heating did not match this on deposition by the PLD method.     

Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method

The microstructural characterization of Ga-doped (5 at.%) ZnO thin film was conducted by a transmission electron microscopy study. The atomic arrangement of Ga-doped ZnO having an wurtzite structure was identified by the experimental HRTEM and Fourier filtered images as well as the electron diffractions. As a result, we have revealed that the orientation and defect density of Ga-doped ZnO thin films were greatly influenced by the deposition temperature, resulting in the variation of electrical property. In other words, the tendency forming a c-axis oriented texture grows up and the defects such as dislocations and stacking faults decrease, as the temperature of sputtering deposition increases. Consequently, the electrical properties of Ga-doped ZnO thin films can be controlled by the deposition temperature directly related with the defect density.     

Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multi-component target material to a given substrate. This advantage of the PLD determined the choice to prepare chalco-genide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Tetargets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.     

不同方法制备的类金刚石薄膜的XPS和Raman光谱的研究

分别利用金属脉冲磁过滤真空阴极弧沉积法(FCVA)、直流磁控溅射法(SP)和脉冲辉光放电等离子体化学气相沉积法(PECVD)在硅片上沉积类金刚石膜层.并利用激光拉曼光谱法(Raman spectroscopy)和X射线光电子能谱法(XPS)对类金刚石膜层进行研究.通过研究分析发现,不同方法制备的类金刚石膜层的G峰位、D...     

氧化物激光薄膜的离子束溅射制备技术

 研究了由Ta₂O₅和SiO₂组成的多层氧化物激光薄膜的双离子束溅射制备工艺。简要介绍了离子束溅射技术的基本工作原理和应用，着重分析了薄膜厚度均匀性的调控方法。先后得到了Ta₂O₅和SiO₂单层薄膜厚度均匀性调控结果以及不同波长处薄膜折射率，并定性地分析比较了离子束溅射和电子束蒸发制备的薄膜结构；制备并测试了633nm,1 315nm反射薄膜以及增透膜。结果表明：采用离子束溅射技术能够制备出优良的、满足需要的激光高反射薄膜元件。     

Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ～10²² cm^?3, while electron scattering occurs at ionized titanium atoms.