Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

The factors influencing the crosstalk of silicon-on-insulator(SOI) nanowire arrayed waveguide grating(AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography(DUV) and inductively coupled plasma etching(ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 d B through adopting 800 nm arrayed waveguide width.     

单Halo全耗尽应变Si 绝缘硅金属氧化物半导体场效应管的阈值电压解析模型

为了改善金属氧化物半导体场效应管(MOSFET) 的短沟道效应(SCE)、 漏致势垒降低(DIBL) 效应, 提高电流的驱动能力, 提出了单Halo 全耗尽应变硅绝缘体 (SOI) MOSFET 结构, 该结构结合了应变Si, 峰值掺杂Halo结构, SOI 三者的优点. 通过求解二维泊松方程, 建立了全耗尽器件表面势和阈值电压的解析模型. 模型中分析了弛豫层中的Ge组分对表面势、表面场强和阈值电压的影响, 不同漏电压对表面势的影响, Halo 掺杂对阈值电压和DIBL的影响.结果表明, 该新结构能够抑制SCE和DIBL效应, 提高载流子的输运效率. 关键词： 应变Si 阈值电压 短沟道效应 漏致势垒降低     

Design and analysis of a new silicon-on-insulator waveguide Michelson interferometer sensor

A new designed and analyzed silicon-on-insulator (SOI) waveguide Michelson interferometer (SMI) sensor is proposed in this paper. The authors compare an optical SMI sensor, a silicon-on-insulator Bragg waveguide grating (SBG) sensor, and a fiber Bragg grating sensor (FBG) for temperature sensing in medicine applications. The SMI sensor has 20 times sensing more accuracy than the FBG sensor. Moreovr, the full width at half maximum (FWHM) of the pass-band frequency responses of our proposed SMI can be designed much narrower than FBG and SBG sensors for sensing resolution enhancement. Further, the improved characteristics of the SMI demonstrated in this paper could pave the way for future high density temperature monitoring medicine applications.     

Design, analysis and optimization of silicon-on-insulator photonic crystal dual band wavelength demultiplexer

A highly efficient photonic crystal dual band wavelength demultiplexer (DBWD) using silicon-on-insulator (SOI) substrates is proposed for demultiplexing two optical communication wavelengths, 1.31 μm and 1.55 μm. Demultiplexing of two wavelength channels is obtained by modifying the propagation properties of guided modes in two arms of Y type photonic crystal structure. Propagation characteristics of proposed DBWD are analyzed utilizing 3D finite difference time domain (FDTD) method. Enhancement in spectral response is further obtained by optimizing the Y junction of demultiplexer giving rise to high transmission and extinction ratio for the wavelengths, 1.31 μm and 1.55 μm. Hence it validates the efficiency of proposed optimized DBWD design for separating two optical communication wavelengths, 1.31 μm and 1.55 μm. Tolerance analysis was also performed to check the effect of variation of air hole radius, etch depth and refractive index on the transmission characteristics of the proposed design of SOI based photonic crystal DBWD.     

SOI纳米线波导导光机理的物理分析

SOI（silicon-on-insulator）纳米线波导及其器件是近年来光电子学领域研究的重点内容之一．文章从基本的导波光学理论出发,引入古斯一汉森位移理论,对SOI纳米线波导导光的物理机制进行了分析并给出了物理解释和模拟结果．     

Brillouin power spectrum analysis for partially uniformly strained optical fiber

Due to the restriction of the spatial resolution, about 1 m for current commercially available system, strain distribution measured by Brillouin optical time domain reflectometer (BOTDR) is slightly different from the actual one. In this paper, the equation of the Brillouin power spectrum for partially uniformly strained fiber within the spatial resolution is theoretically derived. Based on the derived results, investigation has been made on the shape characteristics of the superposed Brillouin power spectrum, as well as the dependence of the calculated strain of BOTDR on the actual strain of the fiber. It was found that the difference between the calculated strain and the actual strain depends mainly on the strain value of the fiber and the strained length within the spatial resolution for the given distributed sensing system.     

Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

We propose a novel resonator containing an elliptical microring based on a silicon-on-insulator platform. Simulations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits.     

SOI纳米线波导导光机理的物理分析

SOI（silicon-on-insulator）纳米线波导及其器件是近年来光电子学领域研究的重点内容之一.文章从基本的导波光学理论出发,引入古斯-汉森位移理论,对SOI纳米线波导导光的物理机制进行了分析并给出了物理解释和模拟结果.     

Dynamics of free-standing films of smecticsC

Summary A system of nonlinear hydrodynamics equations of freestanding films of smecticsC is obtained. The Poisson three-dimensional brackets of the hydrodynamical variables of smecticsC integrated by the width of the film are used. A spectrum of the intrinsic modes is calculated and fluctuation effects are analysed. It is shown that in the main approximation over the anisotropy of the smectic layer only fluctuations of the transverse shifts of the film resulting in the observed effects in light scattering are essential. Work presented at the First USSR-Italy Bilateral Meeting on Liquid Crystals held in Portonovo, Ancona (Italy), September 30–October 2, 1987.     

Model of Vernier devices in silicon-on-insulator technology

In order to increase the number of channels that could be multiplexed or demultiplexed in the dense wavelength division multiplexed (DWDM) system based on the resonators on silicon-on-insulator (SOI) technology, the Vernier effect in the series-coupled racetrack resonators is presented to extend the free spectral range (FSR) of the DWDM systems. A method is developed based on a matrix approach to simulate Vernier devices. A three-dimensional full vectorial finite difference (FVFD) model, specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in SOI technology, is developed to obtain the properties of a waveguide. Finally, the Vernier effect in the two series-coupled racetrack resonators is experimentally verified with an improved FSR and interstitial resonance suppression.     

Surface tension of free-standing smectic films

A generalized mean-field model, which takes into account the anisotropic interactions between the nearest neighbor molecules (forming free-standing smectic films (FSSFs)) and the stabilizing effect of smectic-air interfaces, has been used for numerically studying the structural and thermodynamic properties of these systems during their layer-by-layer thinning. The results of calculating the surface tension γ of a partially fluorinated liquid-crystal compound formed by 5-n-alkyl-2-(4-n-(perfluoroalkyl-methyleneoxy))pentyl (H10F5MOPP) molecules have demonstrated that the value of γ per FSSF molecule undergoes a stepwise increase during layer-by-layer thinning of the film. The dimensional surface tension during the layer-thinning of a 25 layer FSSF formed by H10F5MOPP molecules varies insignificantly within ∼19 dyn/cm, which agrees with the experimental value (∼14 dyn/cm) for this liquid-crystal compound.     

Flame structure analysis and flamelet progress variable modelling of strained coal flames

Strained two-phase pulverised coal flames in a counterflow configuration are investigated numerically. Three operating conditions with different coal-to-primary-air ratios and inlet velocities were evaluated in order to establish different flame regimes. At first, the two-phase flow of the fully resolved reference cases is calculated solving the transport equation for the species and directly evaluating the reaction rates. Different flame structures are identified using the heat release rate and the chemical explosive mode as markers, showing that complex structures with a combination of lean premixed and non-premixed flames can be observed in strained counterflow coal flames. In addition to the fully resolved simulation, the suitability of the Flamelet-Progress Variable (FPV) model is investigated. Both premixed and non-premixed tables are employed. At first, the suitability of the look-up tables is evaluated by means of an a priori analysis, using the fully resolved simulations as reference solutions, showing that the non-premixed flamelet table correctly predicts the structure of the strained coal flames, while the premixed table shows sensible deviations in terms of temperature and species, especially at rich conditions. Finally, the a posteriori analysis shows that the fully coupled FPV model with a non-premixed flamelet look-up table can accurately predict strained coal flames.     

Strain analysis by grating interferometry

An optical technique is presented for the direct and real-time determination of unit surface strains. The technique is based on the following main operations: (a) recording a high density reflection grating on the undeformed surface, (b) obtaining a shearing interferogram of one of the diffracted beams from the deformed surface, (c) compensating for out-of-plane displacement and for surface roughness by means of real-time phase conjugation.     

Strain mapping analysis of textile composites

The focus of the work is meso-scale analysis (scale level of the fabric unit cell) of textile composite deformation and failure. The surface strain measurement is used for: (1) experimental investigation, which includes study of strain distribution at various stages of deformation, plasticity detection, damage initiation; (2) numerical validation of the correspondent finite element (FE) models. Two examples are considered: carbon-epoxy triaxial-braided and glass polypropylene-woven composite. The surface strain measurement (by digital image correlation technique) accompanies the tensile tests, aiming at: (1) elastic anisotropic constants characterisation, (2) study of non-linear material behaviour (for the thermoplastic composite), (3) control of homogeneity of the macro-strain distribution, and (4) analysis of damage initiation in brittle composites. Validation of meso-FE models by strain measurements encounters difficulties arising from (1) resolution of the strain measurements, (2) irregularities of the initial structure such as random layer nesting, ply interaction, and deviation of yarns from their theoretical position, which affects the measured strain fields. The paper discusses these difficulties and demonstrates a qualitative agreement with the FE analysis of idealised composite configurations.     

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

In this article we give an overview over the physical mechanisms involved in the electronic transport in ultrathin-body SOI Schottky-barrier MOSFETs. A strong impact of the SOI and gate oxide thickness on the transistor characteristics is found and explained using experimental as well as simulated data. We elaborate on the influence of scattering in the channel and show that for a significant barrier the on-state current is insensitive to scattering once the mean free path for scattering is larger than a characteristic length scale. In addition, recent efforts to lower the Schottky barrier at the source/drain channel interfaces are presented. Using dopant segregation during silicidation significantly lower effective Schottky barriers can be realized that allow for high performance SB-MOSFET devices. PACS 85.30.Tv; 85.35.-p; 73.30.+y     

Characterization of GaN layers grown on silicon-on-insulator substrates

In this study, we report growth and characterization of GaN layers on (1 0 0)- and (1 1 1)-oriented silicon-on-insulator (SOI) substrates. Using metalorganic chemical vapor deposition (MOCVD) technique, GaN layers are grown on KOH treated Si (1 0 0) overlayers of thin SIMOX SOI substrates. Growth of GaN on such surface with an AlN buffer leads to c-axis orientated textured GaN. This is evident from high-resolution X-ray diffraction (HRXRD) measurement, which shows a much broader rocking curve linewidth. Significantly enhanced photoluminescence (PL) intensity and partial stress relaxation is observed in GaN layers grown on these SOI substrates. Furthermore, GaN grown on (1 1 1)-oriented bonded SOI substrates shows good surface morphology and improved optical quality. Micro-Raman, micro-PL, and HRXRD measurements reveal single crystalline hexagonal GaN oriented along (0 0 0 1) direction. We also report growth and characterization of InGaN/GaN multi-quantum well structures on (1 1 1)-oriented bonded SOI. Such an approach to realize nitride epilayers would be useful to fabricate GaN-based micro-opto-electromechanical systems (MOEMS) and sensors.