Hybrid-type passively and actively modelocked fiber laser with a DI-NOLM

We present a 10-GHz hybrid actively and passively mode-locked fiber ring laser with a dispersion im-balanced nonlinear loop mirror (DI-NOLM), whose nonlinear switching characteristic can make the laser operate at additive pulse modelocking (APM) mode or additive pulse limiting (APL) mode. When the laser operated at APM, 5.45 ps of transform-limited pulse series were obtained. When the laser was biased at APL region, supermode noise was suppressed and the laser output was more stable.     

Numerical study on multiple-pulse operation of passively modelocked stretched pulse fiber ring laser

We numerically study a stable multiple-pulse operation of passively modelocked stretched pulse fiber ring laser. The simulation results show that multiple pulses are formed with being triggered by radiation from a single pulse in a restricted parameter range. In order to obtain a better understanding of the effect of gain bandwidth and nonlinear gain on harmonic modelocking process of multiple-pulse operation, we analyze those effects in detail.     

2.1-W picosecond passively mode-locked external-cavity semiconductor laser

We demonstrate an optically pumped passively mode-locked external-cavity semiconductor laser generating 4.7-ps pulses at 957 nm with as much as 2.1 W of average output power and a 4-GHz repetition rate. Compared with earlier results, the chirp of the pulses has been greatly reduced by use of an intracavity etalon. Apart from restricting the bandwidth, the etalon also helps optimize wavelength-dependent gain parameters and dispersion.     

Sub-100 femtosecond pulses from a SESAM modelocked thin disk laser

We present the first passively modelocked thin disk laser (TDL) with sub-100-fs pulse duration using the broadband sesquioxide gain material Yb:LuScO₃ and an optimized SEmiconductor Saturable Absorber Mirror (SESAM). In this proof-of-principle experiment, we obtained 5.1 W of average power at a repetition rate of 77.5 MHz and a pulse duration of 96 fs. We carefully explored and optimized the different parameters on the soliton pulse formation process for the generation of short pulses. In particular, SESAMs combining fast recovery time, high modulation depth and low nonsaturable losses proved crucial to achieve this result even though they are expected to only play a minor role in soliton modelocking. To our knowledge, these are the shortest pulses ever obtained with a modelocked TDL, reaching for the first time the sub-100-fs milestone. This result opens the door to sub-100-fs oscillators with substantially higher power levels in the near future.     

Compact diode-pumped passively Q-switched tunable Er-Yb double-clad fiber laser

Efficient repetitive passive Q switching of a cladding-pumped Er-Yb fiber laser has been demonstrated by use of an external-cavity configuration containing a Co(2+): ZnS crystal as a saturable absorber. Energies of as much as 60muJ in pulses of durations as short as 3.5 ns (FWHM), corresponding to a peak power of >10kW, have been generated, and the maximum slope efficiency with respect to the absorbed pump power was 13%. Using a bulk diffraction grating in the Littrow configuration to provide wavelength-selective feedback, we tuned the passively Q -switched fiber laser over 31 nm from 1532 to 1563 nm. The prospects for further improvement in performance are discussed.     

Passively modelocked surface-emitting semiconductor lasers

This paper will review and discuss pico- and femtosecond pulse generation from passively modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We shall discuss the physical principles of ultrashort pulse generation in these lasers, considering in turn the role played by the semiconductor quantum well gain structure, and the saturable absorber. The paper will analyze the fundamental performance limits of these devices, and review the results that have been demonstrated to date. Different types of semiconductor saturable absorber mirror (SESAM) design, and their characteristic dynamics, are described in detail; exploring the ultimate goal of moving to a wafer integration approach, in which the SESAM is integrated into the VECSEL structure with tremendous gain in capability. In particular, the contrast between VECSELs and diode-pumped solid-state lasers and edge-emitting diode lasers will be discussed. Optically pumped VECSELs have led to an improvement by more than two orders of magnitude to date in the average output power achievable from a passively modelocked ultrafast semiconductor laser.     

Single-frequency operation of a high-power, long-wavelength semiconductor disk laser

An optically pumped, high-power, single-frequency semiconductor disk laser is demonstrated. A thin (50 microm) diamond bonded to an InGaAsP gain chip provides the combined functions of heat removal and spectral filtering, thus eliminating the need for the additional intracavity etalons that are usually employed for single-frequency operation. In a short cavity (4 mm) configuration we obtained a maximum output power of 470 mW at 0 degrees C and 170 mW at 20 degrees C in a near-diffraction-limited beam (M2 < 1.2). The emission wave-length was 1549 nm and the linewidth was less than 200 MHz.     

Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser

We report the generation of blue 489-nm picosecond laser pulses by intracavity second-harmonic generation in a mode-locked optically pumped InGaAs vertical-external-cavity surface-emitting laser. Mode locking achieved by a semiconductor saturable absorber mirror generated 5.8-ps-long sech²-shaped pulses at an emission wavelength of 978 nm and a repetition rate of 1.88 GHz. Intracavity frequency doubling in a 5-mm-long lithium triborate crystal generated blue picosecond pulses with a spectral width of 0.15 nm and an average output power of up to 6 mW.     

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

A KGd(WO?)? Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.     

Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser

We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz.     

Compact passively q-switched Nd:YAG laser for 2D micromachining

We present a compact passively q-switched diode end pumped Nd:YAG laser at 1064 nm for 2D micromachining. It consists of a 5.5 cm long plano-concave end pumped resonator carrying a Cr:YAG passive q-switch inside the cavity. With an optical conversion efficiency of 46 and 33% the laser emits 1.4 W in CW and 986 mW in q-switched mode at a current of 2.5 A. After using a 2 mm circular aperture the output is seen in TEM₀₀ mode with a single pulse energy of 5 mJ. The laser produced circular holes of diameter 75 μm in 25 μm thick Tantalum foils. Actual results of 1D and 2D machining are shown along with the diffraction patters of the samples.     

CW Cr2+:CdSe laser pumped by semiconductor disk laser

An output power of 0.85 W with a differential efficiency with respect to absorbed pump power of 55.4% is achieved for a Cr²⁺:CdSe laser with a wavelength of 2.6 ??m under optical pumping with a semiconductor disk laser with a wavelength of 1.98 ??m.     

Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror

We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be ∼17.5 ps with a maximum average output power of 0.4 W. The mode-locked pulses have a repetition rate of 121.5 MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers.     

A novel actively and passively mode-locked semiconductor optical amplifier fiber ring laser

A novel actively and passively mode-locked semiconductor optical amplifier fiber ring laser was presented, where semiconductor optical amplifier provided cavity gain and introduced nonlinear polarization rotation, whereas, intensity modulator not only acted as modulator but also polarizer. The pulses with duration below 3 ps (FWHM) and peak power about 16 mW at a repetition rate of 10 GHz can be obtained in our system and the system stability may be enhanced. To investigate system parameters effects on mode-locked pulses, a theoretical model was developed.     

Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass

Q-switched and cw operation of different diode-pumped erbium-ytterbium doped glasses at 1.5 μm has been studied in a compact microlaser setup. For Q-switching we used a novel PbS semiconductor quantum-dot doped glass which offers low saturation intensity compared with typical absorbers used and a fast time response. The cw laser delivered output powers of 35 mW with slope efficiencies of 16%. In Q-switched operation pulse energies of 1 μJ at repetition rates of 1–2 kHz and pulse durations of about 30–50 ns, depending on absorber thickness were obtained. Received: 5 June 2000 / Revised version: 29 June 2000 / Published online: 13 September 2000     

High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm

We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 microm. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.     

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

A 1.6μm mode-locked Raman fiber laser pumped by a 1480nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locking represents a highly practical solution for short-pulse operation.     

Diode-end-pumped passively mode-locked Nd:LuVO4 laser with a semiconductor saturable-absorber mirror

A diode pumped passively mode-locked Nd:LuVO₄ laser with a semiconductor saturable-absorber mirror (SESAM) is demonstrated. The mode-locked pulses have a pulse duration of about 8.8 ps and a repetition rate of 157 MHz. Under an absorbed pump power of 12 W a maximum output power of 3.71 W is obtained, which gives an optical conversion efficiency of 31%. Our results show that Nd:LuVO₄ is a promising gain medium for the high power mode-locked solid-state lasers.     

Compact passively Q-switched diode-pumped Tm:LiLuF4 laser with 1.26 mJ output energy

We demonstrate efficient continuous-wave (CW) and passively Q-switched Tm:LiLuF(4) laser operation near 1.9 μm. The CW slope efficiency reached 54.8% with respect to absorbed power. Stable passive Q-switching with Cr(2+):ZnS saturable absorbers resulted in minimum pulse duration of 7.6 ns and maximum pulse energy and peak power of 1.26 mJ and 166 kW, respectively.     

SESAM‐free mode‐locked semiconductor disk laser

Experimental demonstration of semiconductor saturable absorber‐free mode‐locked optically pumped semiconductor disk laser is presented. The origin of pulsed operation is attributed to the intensity dependent Kerr lens effect arising in the semiconductor gain medium. Achieved results represent a novel method to mode‐lock this type of laser opening new application opportunities. The laser worked stably in both hard and soft aperture configurations. No semiconductor saturable absorber was used in the laser cavity and the operation was self‐starting. The laser was mode‐locked at 210 MHz repetition rate with 1.5 W average output power and 930 fs pulse width at 985 nm. A record high 6.8 kW peak power was achieved. Measured data is presented along with a discussion of the Kerr lens effect in the cavity.