Dual-wavelength Bi_2Se_3-based passively Q-switching Nd~(3+)-doped glass all-fiber laser

We demonstrate a dual-wavelength passively Q-switched Nd~(3+)-doped glass fiber laser using a few-layer topological insulator Bi_2Se_3 as a saturable absorber(SA) for the first time, to the best of our knowledge. The laser resonator is a simple and compact linear cavity using two fiber end-facet mirrors. The SA is fabricated by Bi_2Se_3/polyvinyl alcohol composite film. By inserting the SA into the laser cavity, a stable Q-switching operation is achieved with the shortest pulse width and maximum pulse repetition rate of 601 ns and 205.2 kHz,respectively. The maximum average output power and maximum pulse energy obtained are about 6.6 mW and 38.8 nJ, respectively.     

Passively Q-switched Nd:YVO4/PPLN green laser with a few-layered MoS2 saturable absorber

Optical Review - We experimentally realized and demonstrated a solid-state, passively Q-switched Nd:YVO4/PPLN green laser with a saturable absorber (SA) based on few-layered MoS2. The MoS2 SA was...     

1.15 W Passively Q-Switched Operation Of Tm:YAlO3 Laser with MoS2-Based Saturable Absorber

Journal of Russian Laser Research - In this study, we present a passively Q-switched (PQS) operation of Tm:YAlO3 (Tm:YAP) laser with a MoS2-based saturable absorber (SA). In the PQS mode, an...     

Harmonic Mode-Locked Er-Doped Fiber Laser Based on a Microfiber-Based PbS Nanoparticle Saturable Absorber

Lead sulfide (PbS) is a nanomaterial with excellent optical and chemical properties, such as a narrow bandgap (0.37 eV), high thermal damage threshold, and high stability. Obviously, it is appropriate as a saturable absorber (SA) device for ultrafast photonics. However, PbS nanoparticles (NPs) as the SA of ultrashort harmonic mode-locked pulse still haven't been demonstrated at present. In this paper, the PbS NPs are made into an SA-device-based microfiber by optical deposition method and connected in an integrated Erbium-doped fiber laser. And both characteristics and nonlinear optical properties of PbS NPs have been systemically investigated. A fundamental frequency mode-locked pulsed laser is proposed, whose central wavelength is 1560 nm, and the pulse width is 1 ps. In addition, high repetition rate operations are achieved, with a maximum repetition rate of 833 MHz. This is the first time that PbS NPs are used to generate 96th-order harmonic mode-locking, and the corresponding pulse duration is 987 fs. It is demonstrated that PbS NPs are a kind of SA photonic material with excellent performance. It can improve the communication capacity by applying fiber communication, and it has potential application value even in material processing and optical comb.     

Transition Metal Dichalcogenides (WS_2 and MoS_2) Saturable Absorbers for Mode-Locked Erbium-Doped Fiber Lasers

We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide(WS2) and molybdenum disulfide(MoS_2) as saturable absorber(SA). These materials are fabricated via a simple drop-casting method. By employing WS_2, we obtain a stable harmonic mode-locking at the threshold pump power of 184 mW, and the generated soliton pulse has 3.48 MHz of repetition rate. At the maximum pump power of 250 mW, we also obtain a small value of pulse duration, 2.43 ps with signal-to-noise ratio(SNR) of 57 dB.For MoS_2 SA, the pulse is generated at 105 mW pump power with repetition rate of 1.16 MHz. However, the pulse duration cannot be detected by the autocorrelator device as the pulse duration recorded is 468 ns, with the SNR value of 35 dB.     

Femtosecond Tm-Ho co-doped fiber laser using a bulk-structured Bi_2Se_3 topological insulator

We experimentally demonstrate a femtosecond mode-locked thulium-holmium(Tm-Ho) co-doped fiber laser incorporating a saturable absorber(SA) based on a bulk-structured bismuth selenide(Bi_2Se_3) topological insulator(TI). The SA was prepared by depositing a mechanically exfoliated Bi_2Se_3 TI layer onto a side-polished optical fiber platform. Unlike high-quality nano-structured Bi_2Se_3 TI-based SA, bulk-structured Bi_2Se_3 with non-negligible oxidation was used as a saturable absorption material for this experimental demonstration due to its easy fabrication process. The saturation power and modulation depth of the prepared SA were measured to be ~ 28.6 W and ~13.4%, respectively. By incorporating the prepared SA into a Tm-Ho co-doped fiber ring cavity, stable soliton pulses with a temporal width of ~ 853 fs could be generated at 1912.12 nm. The 3-dB bandwidth of the mode-locked pulse was measured to be ~4.87 nm. This experimental demonstration reaffirms that Bi_2Se_3 is a superb base material for mid-infrared passive mode-locking even under oxidation.     

石墨烯被动锁模全正色散掺镱光纤激光器中的暗脉冲及其谐波

报道了一种基于石墨烯被动锁模的全正色散掺镱环形光纤激光器. 在激光器腔中应用激光诱导沉积法制备的石墨烯可饱和吸收体, 通过调节抽运光功率和偏振控制器的角度分别得到了明脉冲及其二阶谐波, 暗明脉冲对和暗脉冲及其二、三阶谐波这三类不同的脉冲. 其中, 暗明脉冲对和暗脉冲在基于石墨烯被动锁模的掺镱光纤激光器实验中都是第一次被观察到. 本文根据实验结果结合模拟分析了暗脉冲的产生机理, 并研究对比了明脉冲谐波和暗脉冲谐波产生的原因.     

Epitaxial growth of 2D gallium selenide flakes for strong nonlinear optical response and visible-light photodetection

As an emerging group III−VI semiconductor two-dimensional (2D) material, gallium selenide (GaSe) has attracted much attention due to its excellent optical and electrical properties. In this work, high-quality epitaxial growth of few-layer GaSe nanoflakes with different thickness is achieved via chemical vapor deposition (CVD) method. Due to the non-centrosymmetric structure, the grown GaSe nanoflakes exhibits excellent second harmonic generation (SHG). In addition, the constructed GaSe nanoflake-based photodetector exhibits stable and fast response under visible light excitation, with a rise time of 6 ms and decay time of 10 ms. These achievements clearly demonstrate the possibility of using GaSe nanoflake in the applications of nonlinear optics and (opto)-electronics.     

Mode-Locked Erbium-Doped Fiber Laser Using Vanadium Oxide as Saturable Absorber

A mode-locked erbium doped fiber laser(EDFL) is demonstrated using the vanadium oxide(V_2O_5) material as a saturable absorber(SA). The V_2O_5 based SA is hosted into poly ethylene oxide film and attached on fiber ferule in the laser cavity. It shows 7% modulation depth with 71 MW/cm~2 saturation intensity. By incorporating the SA inside the EDFL cavity with managed intra-cavity dispersion, ultrashort soliton pulses are successfully generated with a full width at half maximum of 3.14 ps. The laser operated at central wavelength of 1559.25 nm and repetition frequency of 1 MHz.     

Few-layer graphene film fabricated by femtosecond pulse laser deposition without catalytic layers

The films of few-layer graphene are formed through laser exfoliation of a highly ordered pyrolytic graphite(HOPG), without a catalytic layer for the growth process. The femtosecond(fs) laser exfoliation process is investigated at different laser fluences and substrate temperature. For fs laser exfoliation of HOPG, the few-layer graphene is obtained at 473 K under an optimal laser fluence. The formation of few-layer graphene is explained by removal of intact graphite sheets occurred by an optimal laser fluence ablation. The new insights may facilitate the controllable synthesis of large area few-layer graphene.     

V掺杂二维MoS_2体系气体吸附性能的第一性原理研究

以芥子气和沙林为代表的毒剂具有毒性强、扩散快的特点,是一类杀伤力强、难以防护的化学战剂,对其快速高效检测是一项具有挑战性的课题.本文基于第一性原理计算方法研究了V掺杂对二维MoS_2气敏性能影响的机理,发现V原子向二维MoS_2的掺杂过程为自发的放热反应, V原子可以稳定掺杂于二维MoS_2超胞结构中的S空位上.掺杂进入二维MoS_2体系的V原子作为施主中心向周围Mo原子给出电子,从而提高了材料的导电能力.吸附能、吸附距离和吸附过程中的电子转移计算结果表明V的掺杂提高了二维MoS_2对气体分子的吸附能力,增强了吸附质分子与基底表面的电子相互作用,从而提高了二维MoS_2的气敏性能.     

Zinc-oxide/PDMS-clad tapered fiber saturable absorber for passively mode-locked erbium-doped fiber laser

We propose and demonstrate a passively mode-locked erbium-doped fiber laser(EDFL) based on zincoxide/polydimethylsiloxane(Zn O/PDMS) saturable absorber(SA) that evanescently interacts with the light on a tapered fiber. The Zn O/PDMS composite is coated on the whole surface of the tapered fiber to guarantee the maximum efficiency of the SA device, with a measured insertion loss of 0.87 d B and a modulation depth of 6.4%. The proposed laser can generate soliton mode-locking operation at a threshold power of 33.07 m W. The generated output pulse yields a repetition rate and pulse width of 9.77 MHz and 1.03 ps, respectively. These results indicate that the proposed Zn O/PDMS-clad tapered fiber could be useful as an efficient, compatible, and low-cost SA device for ultrafast laser applications.     

Carboxyl graphene oxide solution saturable absorber for femtosecond mode-locked erbium-doped fiber laser

The carboxyl-functionalized graphene oxide(GO-COOH) is a kind of unique two-dimensional(2 D) material and possesses excellent nonlinear saturable absorption property and high water-solubility. In this paper, we prepare saturable absorber(SA) device by depositing GO-COOH nanosheets aqueous solution on a D-shaped fiber. The modulation depth(MD) and saturable intensity of the SA are measured to be 9.6% and 19 MW/cm~2, respectively. By inserting the SA into the erbium-doped fiber(EDF) laser, a passively mode-locked EDF laser has been achieved with the spectrum center wavelength of 1562.76 nm. The pulse duration, repetition rate, and the signal-to-noise ratio(SNR) are 500 fs, 14.79 MHz, and 80 dB,respectively. The maximum average output power is measured to be 3.85 mW. These results indicate that the GO-COOH nanosheets SA can be used as a promising mode locker for the generation of ultrashort pulses.     

Nanosecond Pulse Generation with Silver Nanoparticle Saturable Absorber

Nanosecond pulse generation in an erbium-doped fiber laser (EDFL) passively mode-locked by a silver nanoparticle(SNP)-based saturable absorber(SA) is experimentally demonstrated. The SA is fabricated by depositing a nanosized SNP layer onto the surface of polyvinyl alcohol film through the thermal evaporation process. By inserting the SA into an EDFL cavity, stable mode-locked operation is achieved at 1561.5 nm with the maximum pulse energy up to 52.3 nJ. The laser operates at a pulse repetition frequency of 1.0 MHz with a pulse width of 202 ns. These results suggest that SNPs could be developed as an effective SA for mode-locking pulse generation.     

Structure and electronic properties of MoS2 nanotubes

Structural and electronic properties as well as the stability of MoS2 nanotubes are studied using the density-functional-based tight-binding method. It is found that MoS2 zigzag ( n,0) nanotubes exhibit a narrow direct band gap and MoS2 armchair ( n,n) possess a nonzero moderate direct gap. Interestingly, the ( n,n) tubes show a small indirect gap similar to the direct gap of ( n,0) nanotubes. Simulated electron diffraction patterns confirm the existence of armchair and zigzag disulphide nanotubes. The structure of the MoS2 nanotube tips is explained by introducing topological defects which produce positive and negative curvature.     

Indium Tin Oxide Coated D-Shape Fiber as a Saturable Absorber for Generating a Dark Pulse Mode-Locked Laser

A dark pulse mode-locked laser is experimentally demonstrated using the indium tin oxide(ITO) coated Dshape fiber as a saturable absorber(SA).Using the polishing wheel technique,a D-shape single mode fiber was fabricated.A 60-nm-thick layer of ITO was deposited over the D-shape fiber using the electron beam deposition method.The SA has a saturation intensity of 40.32 MW/cm~2 and a modulation depth of 3.5%.A stable dark pulse mode-locked laser was observed at a central wavelength of 1559.4 nm with repetition rate 0.98 MHz,pulse width 370 ns and signal-to-noise ratio 61 dB.     

基于硫蒸气处理转移的单层二硫化钼的荧光增强

采用化学气相沉积法在SiO2/Si衬底上制备了单层MoS2,再通过300℃硫蒸气处理用聚甲基丙烯酸甲酯(Polymethyl Methacrylate,PMMA)转移下的单层MoS2.使用原子力显微镜、真空荧光检测和拉曼光谱等手段表征了样品的形貌和光致发光性能.结果表明:经过硫蒸气处理转移后的单层MoS2的光致发光强度比由化学气相沉积法制备的未处理的单层MoS2的光致发光强度增强了约5倍.光致发光强度增强是由于在硫蒸气处理过程中,单层MoS2的部分硫空位被硫原子纳米团簇所填补,从而提高了光致发光效率.此外,分别将单层MoS2转移到SiO2/Si衬底、石英、三氧化铝及氟化镁衬底再经过硫处理后,也观察到了类似的荧光增强现象.     

点缺陷对单层MoS2电子结构及光学性质的影响研究

采用基于第一性原理的贋势平面波方法,对不同类型点缺陷单层MoS2电子结构、能带结构、态密度和光学性质进行计算。计算结果表明：单层MoS2属于直接带隙半导体,禁带宽度为1.749ev,V-Mo缺陷的存在使得MoS2转化为间接带隙Eg=0.671eV的p型半导体,V-S缺陷MoS2的带隙变窄为Eg=0.974eV,S-Mo缺陷的存在使得MoS2转化为间接带隙Eg=0.482eV; Mo-S缺陷形成Eg=0.969eV直接带隙半导体,费米能级上移靠近价带。 费米能级附近的电子态密度主要由Mo的4d态和s的3p态电子贡献。光学性质计算表明：空位缺陷对MoS2的光学性质影响最为显著,可以增大MoS2的静态介电常数、折射率n0和反射率,降低吸收系数和能量损失。     

2-μm mode-locked nanosecond fiber laser based on MoS_2 saturable absorber

We demonstrated a 2-μm passively mode-locked nanosecond fiber laser based on a MoS_2 saturable absorber(SA).Owing to the effect of nonlinear absorption in the MoS_2 SA, the pulse width decreased from 64.7 to 13.8 ns with increasing pump power from 1.10 to 1.45 W. The use of a narrow-bandwidth fiber Bragg grating resulted in a central wavelength and 3-dB spectral bandwidth of 2010.16 and 0.15 nm, respectively. Experimental results show that MoS_2 is a promising material for a 2-μm mode-locked fiber laser.     

Theoretical Study on Passively Mode-Locked Fiber Lasers with Saturable Absorber

In this paper, passively mode-locked erbium-doped fiber lasers based on saturable absorber (SA) have been theoretically studied. The energetics and pulse properties for different fiber laser cavity configurations have been investigated and the effects of each component (active fiber, passive fiber, and SA) in the laser cavity have been studied. This numerical study takes into account the temporal change in the saturable absorption (dq/dt).The presented simulations could be highly useful for understanding, optimizing, and improving passively mode-locked fiber lasers with SA.