Effects of electric field and hydrostatic pressure on donor binding energies in a spherical quantum dot

The binding energies of a hydrogenic donor in a GaAs spherical quantum dot in the Ga_1−xAl_xAs matrix are presented assuming parabolic confinement. Effects of hydrostatic pressure and electric field are discussed on the results obtained using a variational method. Effects of the spatial variation of the dielectric screening and the effective mass mismatch are also investigated. Our results show that (i) the ionization energy decreases with dot size, with the screening function giving uniformly larger values for dots which are less than about 25 nm, (ii) the hydrostatic pressure increases the donor ionization energy such that the variation is larger for a smaller dot, and (iii) the ionization energy decreases in an electric field. All the calculations have been carried out with finite barriers and good agreement is obtained with the results available in the literature in limiting cases.     

The hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dot

A theoretical study of combined effects of the hydrostatic pressure and the electric field on the subband ground state energy and on the normalized ground state binding energy of a hydrogenic donor impurity on center located in a GaAs/AlAs spherical quantum dot with fixed dot radius is presented. The study is performed in the framework of the effective mass and parabolic band approximations and using a variational procedure. As a key result, it may be possible to gather high resolution maps of electric field on the studied structure with described technique.     

The hydrostatic pressure and temperature effects on a hydrogenic impurity in a spherical quantum dot

Exact analytical solutions of the reaction-diffusion equations with spatial inhomogeneous reaction and diffusion coefficients are found. It is shown that the space-oscillating approximate solution of a traveling wave type [P.K. Brazhnik, J.J. Tyson, SIAM J. Appl. Math. 60, 371 (1999)] is the exact one for the inhomogeneous Fisher-Kolmogorov equation in two dimensions.     

Hydrostatic pressure and temperature dependence of correlation energy in a spherical quantum dot

The combined effects of hydrostatic pressure and temperature on the ground state binding energy of two electrons in a GaAs spherical quantum dot have been studied by using a perturbation approach within the effective-mass approximation. Our results show that an increment in temperature results in a decrease of the correlation energy while an increment in the pressure for the same temperature increases the correlation energy at a particular dot size. In all cases, it is observed that there is a decrease in the correlation energy due to an increase in the dot size with a given temperature and pressure. The combined effects of hydrostatic pressure and temperature affect the correlation energies appreciably for narrower dots only. The correlation contributes 10%–30% to the binding energy. All the calculations have been carried out with finite barriers, and good agreement is obtained with the existing literature values.     

Effect of the parabolic potential on the binding energy of a hydrogenic impurity in a spherical quantum dot

The binding energy of the ground state of a hydrogenic off-center donor in a spherical quantum dot under a parabolic potential is calculated by a variational method within the effective-mass approximation. The parabolic potential is assumed to be a spherically symmetric potential. The location effects of a hydrogenic donor under a parabolic potential on the binding energy of the ground state are studied. It is found that in the case of an on-center donor, the parabolic potential tends to enhance the strength of the Coulomb interaction and the binding energy of the ground state, and in the case of an off-center donor, the effect of the parabolic potential on the binding energy of the ground state is somewhat complicated.     

Linear and nonlinear optical absorption coefficients and binding energy of a spherical quantum dot

The binding energy and wavefunctions of the 1s, 1p, 1d and 1f energy states of a spherical quantum dot (QD) with parabolic potential were calculated by using a method which is a combination of the quantum genetic algorithm (QGA) and the Hartree–Fock–Roothaan (HFR) approach. In addition, the linear and the third-order nonlinear optical absorption coefficients based on optical transitions in QDs with and without impurity were calculated. The results show that the parabolic potential has a great effect not only on the binding energies and but also on the optical absorption coefficients. Moreover, the calculated results also reveal that the linear and nonlinear optical absorption coefficients are strongly affected by the existence of impurity and the incident optical intensity.     

Effect of the dielectric-constant mismatch and magnetic field on the binding energy of hydrogenic impurities in a spherical quantum dot

Within the effective mass approximation and variational method the effect of dielectric constant mismatch between the size-quantized semiconductor sphere, coating and surrounding environment on impurity binding energy in both the absence and presence of a magnetic field is considered. The dependences of the binding energy of a hydrogenic on-center impurity on the sphere and coating radii, alloy concentration, dielectric-constant mismatch, and magnetic field intensity are found for the GaAs–Ga_1−xAl_xAs–AlAs (or vacuum) system.     

Effect of magnetic field on the impurity binding energy of the excited states in spherical quantum dot

The effect of external magnetic field on the excited state energies in a spherical quantum dot was studied. The impurity energy and binding energy were calculated using the variational method within the effective mass approximation and finite barrier potential. The results showed that by increasing the magnetic field, the energy would be increased. The results obtained by this method were compared with the previous investigations.     

Simultaneous effects of pressure and temperature on the binding energy and diamagnetic susceptibility of a laser dressed donor in a spherical quantum dot

Binding energies and diamagnetic susceptibility of an impurity in a spherical GaAs quantum dot under the simultaneous influence of static pressure, temperature and laser radiation are investigated. Pressure- and temperature-dependent dressed potential which is produced by the combined effects of laser radiation and impurity considerably change the energy spectrum and diamagnetic susceptibility of the system. It is shown that binding energies and diamagnetic susceptibility increase with increasing pressure. Moreover, laser radiation effects on the diamagnetic susceptibility are not significant in comparison with its effects on the binding energy.     

Photoionization and binding energy of a donor impurity in a quantum dot under an electric field: Effects of the hydrostatic pressure and temperature

Using the perturbation approach, we have calculated the donor impurity related photoionization cross-section in a quantum dot under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section on the confinement strength, temperature and hydrostatic pressure.     

Exciton binding energy in a pyramidal quantum dot

The effects of spatially dependent effective mass, non-parabolicity of the conduction band and dielectric screening function on exciton binding energy in a pyramid-shaped quantum dot of GaAs have been investigated by variational method as a function of base width of the pyramid. We have assumed that the pyramid has a square base with area \(a\times a\) and height of the pyramid \(H=a/2\). The trial wave function of the exciton has been chosen according to the even mirror boundary condition, i.e. the wave function of the exciton at the boundary could be non-zero. The results show that (i) the non-parabolicity of the conduction band affects the light hole (lh) and heavy hole (hh) excitons to be more bound than that with parabolicity of the conduction band, (ii) the dielectric screening function (DSF) affects the lh and hh excitons to be more bound than that without the DSF and (iii) the spatially dependent effective mass (SDEM) affects the lh and hh excitons to be less bound than that without the SDEM. The combined effects of DSF and SDEM on exciton binding energy have also been calculated. The results are compared with those available in the literature.     

Donor binding energies and spin-orbit coupling in a spherical quantum dot

The ground state and a few excited state energies of a hydrogenic donor in a spherical quantum dot (GaAs in a GaAlAs matrix) are computed. While the 1s and the 2s-state energies behave normally for dots of all radii, the 2p₀ and 2p_± states are unbound for most of the radii of interest. It is predicted that a semiconductor quantum dot with a hydrogenic donor will exhibit photoconductivity for a low threshold wavelength ∼12 μm. The spin-orbit coupling gives a contribution of the order of 10⁻⁵ meV for both 2p₀ and 2p_± states.     

External electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energy and the diamagnetic susceptibility of a hydrogenic impurity quantum dot

Electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energies of the lower-lying states and the diamagnetic susceptibility of an on-center hydrogenic impurity confined in a typical GaAs/Al_xGa_1−xAs spherical quantum dot is theoretically investigated, by direct diagonalization of the Hamiltonian. To this end, the effect of band non-parabolicity has been performed, by means of the Luttinger-Kohn effective mass equation. Binding energies and diamagnetic susceptibility of the hydrogenic impurity are computed as a function of the dot size, external electric field strength and hydrostatic pressure, with considering the edge-band non-parabolicity. Results show that the external electric field and the hydrostatic pressure have an obvious influence on the binding energies and the diamagnetic susceptibility of the impurity.     

应变纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能的压力效应

考虑应变,在有效质量、有限高势垒近似下,变分研究了纤锌矿GaN/AlxGa1 -xN柱形量子点中类氢施主杂质态结合能随流体静压力、杂质位置及量子点结构参数(量子点高度、半径、Al含量)的变化关系.结果表明,类氢施主杂质态结合能随流体静压力增大而增大,且在量子点尺寸较小时,流体静压力对杂质态结合能的影响更为显著.受流体静压力的影响,杂质态结合能随量子点高度、半径的增加而单调减少,且变化趋势加剧;随Al含量增加而增大的趋势变缓.无论是否施加流体静压力,随着类氢施主杂质从量子点左界面沿材料生长方向移至右界面,杂质态结合能在量子点的右半部分存在一极大值.流体静压力使得极大值点向量子点中心偏移.     

Combined effects of hydrostatic pressure and temperature on nonlinear properties of an exciton in a spherical quantum dot under the applied electric field

Within the framework of the effective-mass approximation, we have calculated the combined effects of hydrostatic pressure, temperature and applied electric field on an exciton confined in a typical GaAs/Ga_0.7Al_0.3As quantum dot. Several inputs of the confinement potential, hydrostatic pressure, temperature, and applied electric field have been considered. Our findings suggest that (1) the effect of the confinement strength is dominant over the electric field effect, (2) the oscillator strength is an increasing function of the hydrostatic pressure, (3) the absorption coefficients and energy difference depend strongly on the hydrostatic pressure but weakly on the temperature, (4) the absorption coefficients with considering excitonic effects are stronger than those without considering excitonic effects and the absorption peak will move to the right side induced by the electron-hole interaction, (5) the applied electric field may effect either the size or the position of absorption peaks of excitons.     

The laser-dressed potential binding energy of a hydrogenic impurity in a spherical quantum dot by the analytical transfer matrix method

The analytical transfer matrix method (ATMM) is efficient and accurate for understanding the nature of bound states. In this paper, it is applied to obtain the binding energy of a hydrogenic impurity placed at the center of the spherical quantum dots (QDs) in an intense laser field. Our results agree with the exact energies in Varshni [Superlattices Microstructures 30 (2001) 45]. Therefore, ATMM gives us an alternative approach to tackle the problem of impurities placed in nano-structures under intense laser fields.     

Double donor in a spherical quantum dot

We present a variational calculation for the ground state of the double donor in a spherical GaAs–Ga_1–x Al _x As quantum dot. The binding energies for the ionized and neutral centres are calculated for several barrier height values as a function of the radius of the dot. Compared with a square well structure, there is a stronger confinement and a larger binding energy for the double donors in a spherical quantum dot.     

Binding energy of an off-center hydrogenic donor in a spherical Gaussian quantum dot

The energy levels of an off-center hydrogenic donor confined by a spherical Gaussian potential have been calculated as a function of the potential radius for different donor position by exact diagonalization method. The results have clearly demonstrated the so-called quantum size effect. The binding energy is dependent on the dot radius R, the impurity ion distance D, and the confining potential depth V₀.     

Effect of various factors on binding energy of pyramid quantum dot: pressure,temperature and impurity position

In the present work, we have studied the effects of hydrostatic pressure, temperature and impurity position on the donor binding energy of a pyramid quantum dot. For this goal, using variational method, we have calculated the binding energy as a function of dot size for various impurity locations, different pressures and temperatures. According to the results, we have found that the binding energy increases when the pressure increases and it enhances as the temperature decreases. Our results show that these effects play an important and considerable role on the donor binding energy of a pyramid quantum dot.     

Binding energy of a screened donor in a spherical quantum dot with a parabolic potential

A wavefunction is proposed for calculating the ground-state energy of a screened donor in a spherical quantum dot under a parabolic potential by a variational method. The donor is taken to be at the center of the quantum dot. Results are presented for four values of the screening parameter by the proposed wavefunction as well as for the hydrogenic donor case by a wavefunction used by Xiao et al.. To assess the accuracy of the results, ‘exact’ energies are also obtained by numerical integration of the Schrödinger equation. It is shown that the proposed wavefunction gives very good results in all cases including the hydrogenic donor case.