Semiconducting thin films of zinc selenide quantum dots

A novel chemical route for deposition of zinc selenide quantum dots in thin film form is developed. The deposited films are characterized with very high purity in crystallographic sense, and behave as typical intrinsic semiconductors. Evolution of the average crystal size, lattice constant, lattice strain and the optical properties of the films upon thermal treatment is followed and discussed. The band gap energy of as-deposited ZnSe films is blue-shifted by ≈0.50 eV with respect to the bulk value, while upon annealing treatment it converges to 2.58 eV. Two discrete electronic states which originate from the bulk valence band are observed in the UV-VIS spectra of ZnSe 3D quantum dots deposited in thin film form via allowed electronic transitions to the 1S electronic state arising from the bulk conduction band—appearing at 3.10 and 3.50 eV. The splitting between these two states is approximately equal to the spin-orbit splitting in the case of bulk ZnSe. The electronic transitions in the case of non-quantized annealed films are discussed in terms of the direct allowed band-to-band transitions with the spin-orbit splitting of the valence band of 0.40 eV. The effective mass approximation model (i.e., the Brus model) with the static relative dielectric constant of bulk ZnSe fails to predict correctly the size dependence of the band gap energy, while only a slight improvement is obtained when the hyperbolic band model is applied. However, when substantially smaller value for ε_r (2.0 instead of 8.1) is used in the Brus model, an excellent agreement with the experimental data is obtained, which supports some earlier indications that the quantum dots ε_r value could be significantly smaller than the bulk material value. The ionization energy of a deep donor impurity level calculated on the basis of the temperature dependence of the film resistivity is 0.82 eV at 0 K.     

Investigation of photoelectrical properties and relaxation dynamics in photoexcited CdSe nanocrystals in thin film form

Electrical and photoelectrical properties of cubic CdSe nanocrystals in thin film form (including the relaxation dynamics of photocarriers) are investigated. Photoelectrical properties of the obtained films are controlled by chemical (varying the reagent concentration in the reaction system) and physical means (controlling the crystal dimensions). In the case of thin films with optimal photoelectrical properties, the calculated band gap energy and ionization energies of impurity levels (on the basis of experimentally obtained temperature dependence of dark electrical resistance) at 0 K are 1.85, 0.74 and 0.43 eV, correspondingly. The calculated optical band gap energy (on the basis of spectral dependence of photoconductivity) at room temperature of 1.75 eV is in excellent agreement with the value of 1.77 eV which is obtained on the basis of electronic absorption spectrum in the framework of parabolic approximation for dispersion relation. Upon thermal treatment of chemically deposited thin films of cubic CdSe quantum dots, as a result of processes of coalescence and crystal growth, the electronic contact between nanocrystals increases and the confinement effects irreversibly disappear. Relaxation of non-equilibrium charge carriers is practically carried out according to the linear mechanism. The calculated relaxation time of photoexcited charge carriers is 0.4 ms.     

Characterization and photocatalytic activity of Fe- and N-co-deposited TiO2 and first-principles study for electronic structure

Titanium dioxide (TiO₂), co-deposited with Fe and N, is first implanted with Fe by a metal plasma ion implantation (MPII) process and then annealed in N₂ atmosphere at a temperature regime of 400-600 °C. First-principle calculations show that the (Fe, N) co-deposited TiO₂ films produced additional band gap levels at the bottom of the conduction band (CB) and on the top of the valence band (VB). The (Fe, N) co-deposited TiO₂ films were effective in both prohibiting electron-hole recombination and generating additional Fe-O and N-Ti-O impurity levels for the TiO₂ band gap. The (Fe, N) co-deposited TiO₂ has a narrower band gap of 1.97 eV than Fe-implanted TiO₂ (3.14 eV) and N-doped TiO₂ (2.16 eV). A significant reduction of TiO₂ band gap energy from 3.22 to 1.97 eV was achieved, which resulted in the extension of photocatalytic activity of TiO₂ from UV to Vis regime. The photocatalytic activity and removal rate were approximately two-fold higher than that of the Fe-implanted TiO₂ under visible light irradiation.     

Optical properties of thermally evaporated 4-(4-nitrobenzalideneamino) antipyrine Schiff base thin films

4-(4-nitrobenzalideneamino) antipyrine (NBAA) have been synthesized by refluxed ethanolic solution of 4-aminoantipyrine and p-nitrobenzaldehyde for 4 h and characterized with various physico-chemical techniques. Thin films of NBAA have been prepared by the thermal deposition technique in a vacuum of 1.5 × 10⁻⁵ mbar onto optical flat glass substrates. X-ray diffraction patterns show amorphous nature for all NBAA thin films except UV irradiated thin film which shows amorphous nature with some crystallinity but with small amount. The optical constants of thermally deposited NBAA thin film were investigated in the wavelength range 200–2500 nm. The type of optical transition near the edge of the band gap is found to be indirect allowed transition. The effect of UV irradiation as well as the effect of annealing on the optical properties of NBAA thin films was investigated. The value of the energy gap for thin films under investigation is calculated and found to be 1.56 eV for as-deposited, 1.45 eV for annealed and 1.82 eV for UV irradiation.     

Systematic study on structural phase behavior of CdSe thin films

Cadmium selenide (CdSe) thin films were chemically deposited at room temperature, from aqueous ammoniacal solution using Cd(CH(3)COO)(2) as Cd2+ and Na(2)SeSO(3) as Se2- ion sources. The as-deposited films were uniform, well adherent to the glass substrate, specularly reflective, and red-orange in color. The as-deposited CdSe layers grew with nanocrystalline sphalerite cubic structure along with the amorphous phase present in it, with optical band gap E(g) = 2.3 eV. The films were annealed in air atmosphere for 4 h at different temperatures and characterized for compositional, structural, morphological, and optical properties. XRD and SEM studies clearly revealed the systematic phase transformation of CdSe films from metastable nanocrystalline cubic (zinc blende type) to a mixture of cubic and hexagonal (wurtzite type), and finally into stable hexagonal through different intermediate phases with an improvement in the crystal quality. The films showed a red shift in their optical spectra after annealing.     

Structural,morphological and optical studies on chemically deposited nanocrystalline CdZnSe thin films

In the present paper, cadmium zinc selenide (Cd_0.5Zn_0.5Se) thin films were deposited on glass substrates by chemical bath deposition with optimized deposition parameters. 2-mercaptoethanol was used as a capping agent. The as-deposited thin films were annealed at 300, 500 and 700 °C and then subjected to various structural, morphological and optical investigations. The effect of the presence of capping agent and annealing on these properties was discussed. The phenomenon of phase transformation occurred during annealing. The optical band gap energies were found in the range 2.37–1.7 eV with respect to the annealing temperatures.     

CdO as the archetypical transparent conducting oxide. Systematics of dopant ionic radius and electronic structure effects on charge transport and band structure

A series of yttrium-doped CdO (CYO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates at 410 degrees C by metal-organic chemical vapor deposition (MOCVD), and their phase structure, microstructure, electrical, and optical properties have been investigated. XRD data reveal that all as-deposited CYO thin films are phase-pure and polycrystalline, with features assignable to a cubic CdO-type crystal structure. Epitaxial films grown on single-crystal MgO(100) exhibit biaxial, highly textured microstructures. These as-deposited CYO thin films exhibit excellent optical transparency, with an average transmittance of >80% in the visible range. Y doping widens the optical band gap from 2.86 to 3.27 eV via a Burstein-Moss shift. Room temperature thin film conductivities of 8,540 and 17,800 S/cm on glass and MgO(100), respectively, are obtained at an optimum Y doping level of 1.2-1.3%. Finally, electronic band structure calculations are carried out to systematically compare the structural, electronic, and optical properties of the In-, Sc-, and Y-doped CdO systems. Both experimental and theoretical results reveal that dopant ionic radius and electronic structure have a significant influence on the CdO-based TCO crystal and band structure: (1) lattice parameters contract as a function of dopant ionic radii in the order Y (1.09 A) < In (0.94 A) < Sc (0.89 A); (2) the carrier mobilities and doping efficiencies decrease in the order In > Y > Sc; (3) the dopant d state has substantial influence on the position and width of the s-based conduction band, which ultimately determines the intrinsic charge transport characteristics.     

Studies on nanocrystalline cadmium sulphide (CdS) thin films deposited by spray pyrolysis

Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. CdS in the form of thin film is prepared at different substrate temperatures by a simple and inexpensive chemical spray pyrolysis technique. The as-deposited thin films have been characterized by XRD, SEM, EDAX and electrical resistivity measurement techniques. The XRD patterns show that the films are polycrystalline with hexagonal crystal structure irrespective of substrate temperature. SEM studies reveal that the grains are uniform with uneven spherically shaped, distributed over the entire surface of the substrates. Compositional analysis reveals that the material formed is stoichiometric at the optimized substrate temperature. The optical band gap energy is found to be 2.44 eV with direct allowed band-to-band transition for film deposited at 300°C. The electrical resistivity measurement shows that the films are semiconducting with a minimum resistivity for film deposited at 300°C. The thermoelectric power measurement shows that films exhibit n-type of conductivity.     

Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

The band alignment and defect states of GaInZnO thin films grown on SiO₂/Si via radio frequency (RF) magnetron sputtering were investigated by using X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo‐electron emission and photo‐induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo‐induced current transient spectroscopy and thermally stimulated exo‐electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field‐effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright © 2016 John Wiley & Sons, Ltd.     

Photophysics, photoelectrical properties and photoconductivity relaxation dynamics of quantum-sized bismuth(III) sulfide thin films

Electrical and photoelectrical properties (including both the stationary photoresponse and the photocarriers' relaxation dynamics) of nanocrystalline semiconducting bismuth(III) sulfide thin films were investigated. The experimental design of photoelectrical properties was achieved by controlling the chemistry of the deposition process (varying the reagent concentration in the reaction system) and also by physical means (controlling the crystal dimensions by post-deposition annealing). The band gap energy of thin films characterized by most pronounced photoelectrical properties was calculated, on the basis of measured photoconductivity spectral response curves, by several approaches. All of the obtained values are in very good agreement with the corresponding ones obtained from optical spectroscopy data within the framework of parabolic approximation for dispersion relation. On the basis of measured temperature dependence of dark electrical resistivity of nanocrystalline bismuth(III) sulfide films, the thermal band gap energy and the ionization energy of the impurity level (of donor type) were calculated. The corresponding values are 1.50 and 0.42 eV. Dynamics of non-equilibrium charge carriers' relaxation processes was studied with the oscilloscopic method. By analysis of the photoconductivity decay kinetics data it is found that recombination of non-equilibrium charge carriers is carried out according to the linear mechanism. The calculated relaxation time of photoexcited charge carriers is 1.58 ms, the relaxation processes occurring via local trapping centers. Recombination processes occurring via a single-type trapping center can be described within the framework of the Schockley-Read model. The practically linear regime detected in the measured lux-ampere characteristics of the studied films (Δσ∼Φ^0.98) indicate as well a linear recombination mechanism of the photoexcited charge carriers.     

RF-plasma polymerization and characterization of polyaniline

Suitable modifications are done in a RF sputtering set up to facilitate synthesis of polyaniline thin film by RF-plasma polymerization process. The synthesized films are characterized by FTIR, XRD, Ellipsometry, UV-visible absorption & reflection and SEM. The films prepared are highly cross-linked, amorphous in nature and have band gap of 2.07 eV. SEM images show the uniformity in film morphology. The refractive index of the films is determined to be 1.11 and dielectric constant is 1.12 at a wavelength 620 nm in the visible region.     

Optical band gap and conductivity measurements of polypyrrole-chitosan composite thin films

Electrical conductivity and optical properties of polypyrrole-chitosan（PPy-CHI） conducting polymer composites have been investigated to determine the optical transition characteristics and energy band gap of composite films.The two electrode method and I-V characteristic technique were used to measure the conductivity of the PPy-CHI thin films,and the optical band gap was obtained from their ultraviolet absorption edges.Depending upon experimental parameter,the optical band gap（E_g） was found within 1.30-2.32 eV as estimated from optical absorption data.The band gap of the composite films decreased as the CHI content increased.The room temperature electrical conductivity of PPy-CHI thin films was found in the range of 5.84×10^-7-15.25×10^-7 S·cm^-1 depending on the chitosan content.The thermogravimetry analysis（TGA） showed that the CHI can improve the thermal stability of PPy-CHI composite films.     

Single oscillator model and refractive index dispersion properties of ternary ZnO films by sol gel method

The optical constants of the NiMnZnO thin films prepared by spin-coating method were determined using transmittance and reflectance spectra. The optical band gap of the NiMnZnO thin films was found to be in the range of 3.20–3.35 eV. The refractive index dispersion of the NiMnZnO films obeys the single oscillator model. The dispersion energy and oscillator energy values of the NiMnZnO films were found to be in the range of 6.46–9.85 and 4.82–5.54 eV, respectively. The real and imaginary parts of the dielectric constants of the NiMnZnO films were determined. The reflectance spectra of the NiMnZnO films give a peak and the presence of this peak is due to the photoexcitation process, in which, the electrons are excited from valence band to the conduction band. The obtained results suggest that the optical constants and refractive dispersion energy parameters of the films are controlled by the molar ratios of NiMnZnO films.     

旋涂水溶液前驱体制备氧化锌薄膜及其性质

通过旋涂法, 采用Zn(OAc)2·2H2O和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜. PEO的加入增加了溶液的成膜性, 其较低的热分解温度有利于制得纯净的ZnO薄膜. 文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、带隙(Eg)以及电导性. 原子力显微镜(AFM)测试表明在热处理温度为400、450和500 ℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6 nm. 采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子. 通过测试ZnO薄膜的UV-Vis吸收光谱, 根据薄膜位于373 nm处的吸收带边计算得到ZnO的带隙为3.3 eV. 通过对薄膜的电流-电压(I-V)曲线的测试计算得到在热处理温度为400、450和500 ℃制备的ZnO薄膜的电阻率分别为3.3×109、2.7×109和6.6×109 Ω·cm. 450 ℃时制备的ZnO薄膜的电阻率最小, 主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附氧. 而纯度较高、密度较大的薄膜电阻率比较小; 吸附氧含量增加, 晶界势垒增大, 电阻率增大. 因此在纯度和吸附氧的双重作用下450 ℃时制备的ZnO薄膜的电阻率最小, 而500 ℃时制备的ZnO薄膜的电阻率最大.     

Indium selenide thin film preparation by sol–gel technique

Preparation and characterization of In–Se compound thin films prepared by sol–gel methods on glass substrate have been studied. X-ray diffraction analyses and optical transmission spectrum of In–Se compound thin film samples show that the fabricated sol–gel In–Se thin films features formed mainly as an In₂Se₃ crystal structure. From transmission spectra of In–Se thin films band gap energy were estimated approximately as ∼1.24 eV.     

Synthesis,characterization and size dependent energy band gap of binary CdSe quantum dot and its nanoparticle film

Nanocrystals provide a confinement effect for nanoscale engineering. In this work the cadmium selenide quantum dot and its nanoparticle films have been deposited by chemical bath deposition method (CBD). Effects of deposition time, pH and annealing operation on the optical and structural of CdSe nanoparticle film were studied. The energy band gap, structure and morphology of the samples are investigated by X-ray diffraction (XRD), UV-Vis spectrometer and scanning electron microscope (SEM). It was found that the optical band gap, nanoparticle size and thin film configuration are changed by varying pH, deposition time and annealing operation.     

A solution growth technique for the preparation of copper (II) selenide thin films

A solution growth technique has been developed for the deposition of thin films of copper(II) selenide on glass substrate using a copper(II) salt solution, triethanolamine, ammonia, and sodium selenosulfate as the reacting agents. The material has been characterized through X-ray powder photography, optical absorption, and Hall measurements at room temperature. The films are found to be degenerate and p type with a Moss-Burstein shifted direct band gap of 2.14 eV.     

Microwave assisted novel MoBi2S5 nanoflowers: Synthesis,characterization, photoelectrochemical performance

In the present article, we have studied the effect of post annealing treatment on microstructural, optical and photoelectrochemical (PEC) properties of MoBi₂S₅ thin films synthesized by microwave assisted technique. The synthesized thin films are vacuum annealed for 4 h at 473 K temperature. The X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and UV–Vis–NIR spectrophotometer techniques were used for characterization of the as deposited and annealed MoBi₂S₅ thin films. The XRD patterns confirm the synthesized and annealed thin films have nanocrystalline nature with rhombohedral-orthorhombic crystal structure. SEM micrographs indicate that, nanoflowers exhibit sharper end after annealing. The optical absorption study illustrates that the optical band gap energy has been decrease from 2.0 eV to 1.75 eV with annealing. Finally, applicability of synthesized thin films has been checked for PEC property. The J-V curves revealed that synthesized thin film photoanodes are suitable for PEC cell application. As well, used simple, economical method has great potential for synthesis of various thin film materials.     

Synthesis, crystal structure, and optical properties of CeMn0.5OSe

The new quaternary selenide CeMn_0.5OSe has been synthesized by the reaction of Ce, Mn, Se, and SeO₂ at 1223 K. This compound crystallizes in space group P4/nmm of the tetragonal system with two formula units in a cell of dimensions at 153 K of a=4.0260(7) Å, c=9.107(2) Å. CeMn_0.5OSe has the LaAgOS structure type. It is built from [CeO] fluorite-like layers where Ce₄O tetrahedra share Ce-Ce edges that alternate with [MnSe] anti-fluorite like layers along [001]. An optical band gap of 2.01 eV has been derived from absorption measurements on the (100) crystal face of a CeMn_0.5OSe single crystal.