Band structure calculations on the layered compounds FeGa2S4 and NiGa2S4

For the compounds FeGa₂S₄ and NiGa₂S₄ band structure calculations have been performed by the ab initio plane wave pseudo-potential method. The valence charge density distribution points to an ionic type of chemical bonding between the transition metal atoms and the ligand atoms. Two models for the pseudo-potentials are used to calculate the band structures: (a) only s and p electrons and (b) also the d-shells of the transition metal atoms are included in the pseudo-potentials. The differences between these two cases of band structures are discussed. Energy gap formation peculiarities are analysed for both crystals. Zak's elementary energy band concept is demonstrated for the energy spectra of the considered crystals.     

Electronic states of lanthanide in the ternary thiogallate CaGa2S4

The electronic states of lanthanide (Ln) doped CaGa₂S₄ are investigated by the molecular orbital calculations for a spherical cluster of LnCa₈Ga₁₂S₂₄ using the FORTRAN program DVSCAT on the basis of the Discrete Variational method with Xα potentials (DV-Xα). In view of the SCF convergence, the Ln-doped lattice should contract to 85-90% of the mother crystal around the Ln atom for the lightweight lanthanides from Ce to Sm. On the other hand, the lattice contraction is very small for the heavyweight lanthanides, especially for Er, Tm and Yb in contrast to the generally known lanthanide contraction for Ln³⁺ ions. This is probably attributed to the effective charges of Ln atoms calculated here to be less than +1 for all lanthanides contrary to the chemically accepted value of +3. The energy level scheme of 4f and 5d related molecular orbitals is proposed for each Ln substituting Ca in CaGa₂S₄, showing that the optical processes relating to the 5d→4f transition must be complicated especially for the lightweight Ln-doped CaGa₂S₄.     

First-principles calculations of electronic, optical and elastic properties of ZnAl2S4 and ZnGa2O4

The optimized crystal structures, band structures, partial and total densities of states (DOS), dielectric functions, refractive indexes and elastic constants for ZnAl₂S₄ and ZnGa₂O₄ were calculated using the CASTEP module of Materials Studio package. Pressure effects were modeled by performing these calculations for different values of external hydrostatic pressure up to 50 GPa. Obtained dependencies of the unit cell volume on pressure were fitted by the Murnaghan equation of state, and the relative changes of different chemical bond lengths were approximated by quadratic functions of pressure. Variations of applied pressure were shown to produce considerable re-distribution of the electron densities around ions in both crystals, which is evidenced in different trends for the effective Mulliken charges of the constituting ions and changes of contour plots of the charge densities. The longitudinal and transverse sound velocities and Debye temperatures for both compounds were also estimated using the calculated elastic constants.     

Pressure effect on the electronic and optical properties of the alkali antimonide semiconductors Cs3Sb, KCs2Sb, CsK2Sb and K3Sb: Ab initio study

We present first principles calculations of the effect of pressure on the electronic and optical properties of the alkali antimonides semiconductors K₃Sb, K₂CsSb, KCs₂Sb and Cs₃Sb by means of the full-potential linearized augmented plane wave method within the generalized gradient approximation. The band gap variation is not linear. The crossover pressure values are determined for K₃Sb and K₂CsSb. Under pressure the structures in the optical spectra shift towards higher energies for K₃Sb and KCs₂Sb whereas the threshold energy is lowered for K₂CsSb and Cs₃Sb. The electronic dielectric constant decreases with pressure for K₃Sb while it increases for the other three compounds. Our results indicate that the absorption becomes strong in the UV region for KCs₂Sb and Cs₃Sb.     

Structural,elastic and thermodynamic properties under pressure and temperature effects of MgIn2S4 and CdIn2S4

A density functional-based method is used to investigate the structural, elastic and thermodynamic properties of the cubic spinel semiconductors MgIn₂S₄ and CdIn₂S₄ at different pressures and temperatures. Computed ground structural parameters are in good agreement with the available experimental data. Single-crystal elastic parameters are calculated for pressure up to 10 GPa and temperature up to 1200 K. The obtained elastic constants values satisfy the requirement of mechanical stability, indicating that MgIn₂S₄ and CdIn₂S₄ compounds could be stable in the investigated pressure range. Isotropic elastic parameters for ideal polycrystalline MgIn₂S₄ and CdIn₂S₄ aggregates are computed in the framework of the Voigt–Reuss–Hill approximation. Pressure and thermal effects on some macroscopic properties such as lattice constant, volume expansion coefficient and heat capacities are predicted using the quasi-harmonic Debye model in which the lattice vibrations are taken into account.     

Molecular dynamics simulation of phase transition in AgNO3

Structural phase transition in AgNO₃ at high temperature is simulated by molecular dynamics. The simulations are based on the potentials calculated from the Gordon-Kim modified electron-gas formalism extended to molecular ionic crystals. AgNO₃ transforms into rhombohedral structure at high temperature and the phase transition is associated with the rotations of the NO₃ ions and displacements of the NO₃ and Ag ions.     

Electronic structure and electric-field-gradients distribution in Y3Al5O12: An ab initio study

The periodic Hartree-Fock method has been applied to calculate the electronic structure of the yttrium aluminium garnet. We report on the results of the density of state calculations, the population analysis, as well as the electric-field-gradient distribution. A comparative analysis with the related structure α-Al₂O₃ was done. The calculations show that the Y₃Al₅O₁₂ crystal is more ionic than α-Al₂O₃.     

Electronic structure of CeF3 and TbF3 by valence-band XPS and theory

Electronic structures of the rare earth trifluorides CeF₃ () and TbF₃ (Pnma) were examined by high-resolution valence-band X-ray photoelectron spectroscopy (VB-XPS) and all-electron periodic-crystal DFT theory including the spin-polarization (SP) combined with spin-orbit (SO) coupling using a second-variational treatment. Calculations using the Perdew-Burke-Ernzerhof (PBE) functional and the LDA+U method were carried out and compared. The results show that a complete analysis does require a full DFT-SP-SO treatment to obtain a quantitative account for the observed VB-XPS spectra, with an additional insight of the theory with regard to the nature of the topmost orbitals, and the bonding-antibonding character of orbitals within the VB and sub-VB levels. The band structure at the bottom of the conduction band (BCB) shows a strong dispersion in TbF₃ but not in CeF₃, predicting photoconductivity in TbF₃.     

Structural transition of Ti3SiC2 under high hydrostatic pressure: A first-principles study

We theoretically studied the phase transformation, electronic and elastic properties of Ti₃SiC₂ ceramic by using the pseudopotential plane-wave method within the density functional theory. Our results demonstrate that there exists a structural phase transition from α‐Ti₃SiC₂ to β‐Ti₃SiC₂ under pressure up to 384 GPa, and α‐Ti₃SiC₂ is the most stable phase at zero pressure. The calculated electronic band structure and density of states reveal the metallic behavior for the polymorphs of Ti₃SiC₂. The mechanical stability of α‐Ti₃SiC₂ at zero pressure is confirmed by the elastic constants, and is analyzed in terms of electronic level. By analyzing the ratio between bulk and shear moduli, we conclude that α‐Ti₃SiC₂ is brittle in nature.     

Enhanced gas-sensing behaviour of Ru-doped SnO2 surface: A periodic density functional approach

A theoretical study on Ru-doped rutile SnO₂(1 1 0) surface has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA-RPBE) level with a periodic supercell approach. Electronic structure analysis was performed based on the band structure and partial density of states. The results provide evidence that the electronic structures of SnO₂(1 1 0) surface are modified by the surface Ru dopant, in which Ru 4d orbital are located at the edge of the band gap region. It is demonstrated that molecular oxygen adsorption characteristics on stoichiometric SnO₂(1 1 0) surface are changed from endothermic to exothermic due to the existence of surface Ru dopant. The dissociative adsorption of molecular oxygen on the Ru_5c/SnO₂(1 1 0) surface is exothermic, which indicates that Ru could act as an active site to increase the oxygen atom species on SnO₂(1 1 0) surface. Our present study reveals that the Ru dopant on surface is playing both electronic and chemical role in promoting the SnO₂ gas-sensing property.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

The electronic structures of titanium dioxide (TiO₂) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO₂ is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the O p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t_2g state of the dopant plays a significant role in the photoresponse of TiO₂ under visible light irradiation.     

Doping-induced spin-manipulation in complex trimer system Ca3Cu3(PO4)4: A density functional investigation

Doping induced spin-manipulation with magnetic (Ni) and non-magnetic (Mg) dopants constitutes the experimental attempts to obtain a singlet ground state system from the linear chain Heisenberg antiferromagnetic Cu-based d⁹ spin-1/2 trimer compound Ca³Cu³(PO⁴)⁴ with doublet ground state. The present study is a density-functional investigation of the effects of such doping on the spin-exchange mechanism and electronic structure of the parent compound. Site-selective doping with zero-spin dopants like Mg is proved to be more efficient than an integral spin dopant Ni in obtaining a spin-gap system with singlet ground state, as also observed in the experimental studies. Doping induced dimerized state is found to be the lowest in ground-state energy. Calculated spin exchange couplings along various possible pathways are observed to attain good agreement with earlier experimental results with suitable optimization of Coulomb repulsion (U) and exchange (J) parameters.     

Crystal growth and the electronic structure of Tl3PbCl5

Total and partial densities of states of constituent atoms of two tetragonal phases of Tl₃PbCl₅ (space groups P4₁2₁2 and P4₁) have been calculated using the full potential linearized augmented plane wave (FP-LAPW) method and Korringa-Kohn-Rostoker method within coherent potential approximation (KKR-CPA). The results obtained reveal the similarity of occupations of the valence band and the conduction band in the both tetragonal phases of Tl₃PbCl₅. The FP-LAPW and KKR-CPA data indicate that the valence band of Tl₃PbCl₅ is dominated by contributions of the Cl 3p-like states, which contribute mainly to the top and the central portion of the valence band with also significant contributions throughout the whole valence-band region. Further, the bottom of the valence band of Tl₃PbCl₅ is composed mainly of the Tl 6s-like states, while the bottom of the conduction band is dominated by contributions of the empty Pb 6p-like states. The KKR-CPA results allow to assume that the width of the valence band increases somewhat while band gap, E_g, decreases when changing the crystal structure from P4₁2₁2 to P4₁. The X-ray photoelectron core-level and valence-band spectra for pristine and Ar⁺-ion-irradiated surfaces of a Tl₃PbCl₅ monocrystal grown by the Bridgman-Stockbarger method have been measured.     

Band structure and optical spectra of RbNH4SO4 crystals

First-principal density functional theory (DFT) calculations of the band structure, density of states and dielectric functions ε(E) of the rubidium ammonium sulfate (RAS) crystal, RbNH₄SO₄, in the orthorhombic phase Pnma have been carried out using the CASTEP code. Valence electron bands of the crystal are flat in k-space, that responds to the relatively great effective mass, m*?5m_e. The top valence band of the crystal has been found to be the most flat, what might be an evidence of a weak chemical bonding of the sulfate complexes (SO₄) in the crystal and therefore for the predisposition to structural instability and phase transitions. The characteristic feature is that two top valence bands are originated almost entirely from p-electrons of oxygen. The bottom part of the conduction band is formed mainly by the hydrogen atoms, the higher parts of this band—by a mixed set of chemical elements and orbital moments. The calculated refractive indices in the range of crystal's transparency agree satisfactorily with the experiment considering that the infrared absorption is not taken into account in calculations.     

Lattice dynamics of cubic SrZrO3

Using density functional perturbation theory, the optical dielectric constant, Born effective charges and phonon dispersion curves of cubic SrZrO₃ have been calculated. The obtained dispersion curves show a soft phonon branch spreading from R to M points of the cubic Brillouin zone. An analysis based on the symmetry relationships indicates that the experimentally observed low-symmetry phases of SrZrO₃ can be considered as results of the soft mode condensation at R and M points.     

High-temperature crystal structure and electronic properties of cesium niobate Cs2Nb4O11

The antiferroelectric material Cs₂Nb₄O₁₁ transforms at 165 °C from a low-temperature, antiferroelectric phase in space group Pnna to a high-temperature, paraelectric phase in space group Imma; the latter structure has been determined by single-crystal X-ray diffraction. The high-temperature lattice is comprised of niobium-centered tetrahedra and octahedra connected through shared vertices and edges; cesium atoms occupy channels afforded by the three-dimensional polyhedral network. Calculated band structures for both phases predict a bandgap of 3.1-3.2 eV, which is similar to that found experimentally through photoluminescence. The calculated band structure is also conducive to its observed photocatalytic properties.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Structural and vibrational properties of Ca2FeH6 and Sr2RuH6

The structural and vibrational properties of the isostructural compounds Ca₂FeH₆ and Sr₂RuH₆ are determined by periodic DFT calculations and compared with their previously published experimental crystal structures as well as new experimental vibrational data. The analysis of the vibrational data is extended to the whole series of alkaline-earth iron and ruthenium hydrides A₂TH₆ (A=Mg, Ca, Sr; T=Fe, Ru) in order to identify correlations between selected frequencies and the T-H bond length. The bulk moduli of Ca₂FeH₆ and Sr₂RuH₆ have also been determined within DFT. Their calculated values prove to compare well with the experimental values reported for Mg₂FeH₆ and several other compounds of this structure.