Au/SiO2纳米复合薄膜的微结构及光吸收特性研究

用多靶磁控溅射技术制备了Au/SiO₂纳米多层薄膜.利用透射电子显微镜以及吸 收光谱对Au/SiO₂复合薄膜的微观结构、表面形貌及光学性能进行了表征和测试 .研究结果表明：单层Au/SiO₂薄膜中Au沉积时间小于10s时，分散在SiO_{2< /sub>中的Au颗粒随Au的沉积时间的延长而增大；当沉积时间超过10s后，Au颗粒的尺寸几乎 不随沉积时间变化，但Au颗粒的形状由网络状结构变为薄膜状结构.［Au(t1关键词： 尺寸效应 纳米复合薄膜 吸收光谱 有效媒质理论}     

Characterization of Si nanocrystals into SiO2 matrix

Silicon nanocrystals (nc-Si) have gained great interest due to their excellent optical and electronic properties and their applications in optoelectronics. The aim of this work is the study of growth mechanism of nc-Si into a-SiO₂ matrix from SiO/SiO₂ multilayer annealing, using non-destructive and destructive techniques. The multilayer were grown by e-beam evaporation from SiO and SiO₂ materials and annealing at temperatures up to 1100 °C in N₂ atmosphere. X-rays reflectivity (XRR) and high resolution transmission electron microscopy (HRTEM) were used for the structural characterization and spectroscopic ellipsometry in IR (FTIRSE) energy region for the study of the bonding structure. The ellipsometric results gave a clear evidence of the formation of an a-SiO₂ matrix after the annealing process. The XRR data showed that the density is being increased in the range from 25 to 1100 °C. Finally, the HRTEM characterization proved the formation of nc-Si. Using the above results, we describe the growth mechanism of nc-Si into SiO₂ matrix under N₂ atmosphere.     

Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2 /Si and SiO2 /SiC interfaces

Silicon is by far the most important material used in microelectronics, partly due to the excellent electronic properties of its native oxide (SiO₂), but substitute semiconductors are constantly the matter of research. SiC is one of the most promising candidates, also because of the formation of SiO₂ as native oxide. However, the SiO₂/SiC interface has very poor electrical properties due to a very high density of interface states which reduce its functionality in MIS devices. We have studied the electronic properties of defects in the SiO₂/Si and SiO₂/SiC interfaces by means of XAS, XPS and resonant photoemission at the O 1s and the Si 2p edges, using silicon dioxide thermally grown with thicknesses below 10 nm. Our XAS data are in perfect agreement with literature; in addition, resonant photoemission reveals the resonant contributions of the individual valence states. For the main peaks in the valence band we find accordance between the resonant behaviour and the absorption spectra, except for the peaks at −15 eV binding energy, whose resonant photoemission spectra have extra features. One of them is present in both interfaces and is due to similar defects, while another one at lower photon energy is present only for the SiO₂/SiC interface. This is related to a defect state which is not present at the SiO₂/Si interface.     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO₂纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO₂的沉积时间及SiO₂的沉积时间一定而改变薄膜厚度时，多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明：具有纳米层状结构的Au/SiO₂多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰，吸收峰的强度随Au颗粒的浓度增加而增强，在Au颗粒浓度相同的情况下，复合薄膜 关键词： 2纳米复合薄膜')" href="#">Au/SiO₂纳米复合薄膜 多靶磁控溅射 吸收光谱 有效介质理论     

Enhanced nonlinear optical absorption of Au/SiO2 nano-composite thin films

Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications.Au/SiO 2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering.Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO 2 matrix.Optical absorption peaks due to the surface plasmon resonance of Au particles are observed.The absorption property is enhanced with the increase of Au content,showing a maximum value in the films with 37 vol% Au.The absorption curves of the Au/SiO 2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory.Increasing Au content over 37 vol% results in the partial connection of Au particles,whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk.The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases.     

Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO2 matrix by radio-frequency magnetron co-sputtering

Nanocrystalline GaSb embedded in SiO₂ films was grown by radio-frequency magnetron co-sputtering. X-ray diffraction pattern and transmission electron microscopy (TEM) confirm the existence of GaSb nanocrystals in the SiO₂ matrix. The average size of GaSb nanoparticles is in the range of 3 to 11 nm. Diffuse reflectance spectra were used to characterize the small change of the band gap of the semiconductor. The diffuse reflectance spectra shows that the absorption peaks have a large blueshift of about 4.0 eV of the absorption relative to that of bulk GaSb. It has been explained by quantum confinement effects. Room temperature optical transmission spectra show that the absorption edge exhibits a very large blueshift of about 2.1 eV with respect to that of bulk GaSb in agreement with quantum confinement. Received: 28 July 1999 / Accepted: 27 October 1999 / Published online: 1 March 2000     

Preparation and characterizations of SiO2-coated nanoparticles of Mn0.4Zn0.6Fe2O4

Core/shell nanoparticles consisting of a magnetic core of zinc-substituted manganese ferrite (Mn_0.4Zn_0.6Fe₂O₄) and a shell of silica (SiO₂) are prepared by a sol-gel method using tetraethyl orthosilicate (TEOS) as a precursor material for silica and salts of iron, manganese and zinc as the precursor of the ferrite. Three weight percentages of the shell materials of SiO₂ are used to prepare the coated nanoparticles. The X-ray diffractograms (XRD) of the coated and uncoated magnetic nanoparticles confirmed that the magnetic nanoparticles are in their mixed spinel phase in an amorphous matrix of silica. Particles sizes of the samples annealed at different temperatures are estimated from the width of the (3 1 1) line of the XRD pattern using the Debye-Sherrer equation. The information regarding the crystallographic structure together with the particles sizes extracted from the high-resolution transmission electron microscopy (HRTEM) of a few selected samples are in agreement with those obtained from the XRD. HRTEM observations revealed that particles are coated with silica. The calculated thickness is in agreement with that obtained from the HRTEM pictures. Hysteresis loops observed in the temperature range 300 down to 5 K and Mössbauer spectra at room temperature indicate superparamagnetic relaxation of the nanoparticles.     

Splitting of X-ray diffraction peak in (Ge:SiO2)/SiO2 multilayers

(Ge:SiO₂)/SiO₂ multilayers were fabricated for exploring the influence of the stress on the structure of Ge nanocrystals. When annealed at 800 °C, the multilayers show a clear splitting (fine structure) of the Ge (220) X-ray diffraction peak and have a preferred orientation. Similar effects cannot take place in the multilayers annealed at higher or lower temperature. Analyses of Raman scattering, X-ray diffraction spectroscopy, and transmission electron microscope observations suggest that the observed phenomena arise from compressive stress exerted on Ge nanocrystals, which is induced by the confinement of both the SiO₂ matrix in the cosputtered layer and neighboring SiO₂ layers. The stress may cause an orthorhombic distortion of the diamond structure of bulk Ge. This will lead to the disappearance of the (111) and (311) diffraction peaks and the splitting of the (220) peak. This kind of (Ge:SiO₂)/SiO₂ multilayers enables us to control the sizes of the Ge crystallites and enhance the stress, and is thus promising in forming new nanocrystal structures.     

Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO₂/SiO₂ 800 nm high-reflective (HR) coatings, with and without SiO₂ protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO₂ protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO₂ protective layer for HfO₂/SiO₂ HR coating with SiO₂ protective layer. The relation of LIDT for two kinds of HfO₂/SiO₂ HR coatings in calculation agrees with the experiment result.     

Electron states in α-quartz (SiO2)

Valence electron states of α-quartz SiO₂ are calculated self-consistently using the pseudopotential method. Excellent agreement is found with photoemission and UV-absorption data. X-ray emission spectra are calculated in an OPW scheme and compared to experiments. While the Si- and O - K spectra agree well with experiment, the Si L_2,3 spectrum shows substantial differences. An explanation is offered base on the formation of amorphous Si in SiO₂ during electron irradiation.     

Luminescence studies and formation mechanism of symmetrically dispersed ZnO quantum dots embedded in SiO2 matrix

Surface effects significantly influence the functionality of semiconductor nanocrystals. In the current work we present synthesis of ZnO quantum dots (QD) vis-a-vis symmetrically dispersed ZnO quantum dots embedded in SiO₂ matrix and discussed their optical properties to understand the role of the surface effects. These nanomaterials were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), fourier transform infrared (FTIR), absorption (UV-visible) and photoluminescence (PL) spectroscopy. TEM studies confirm the formation of ZnO nanophosphors inside the SiO₂ matrix in highly symmetrical manner. These symmetrically dispersed ZnO@SiO₂ nanophosphors exhibited enhanced stable emission over uncoated sample and would permit the conjugation of the nanocrystals to biological entities after functionalization. Furthermore, the mechanism behind the formation of symmetrically dispersed ZnO quantum dots embedded in SiO₂ matrix was discussed in detail.     

Fabrication and characterization of Au/SiO2 nanocomposite films grown by radio-frequency cosputtering

Au/SiO₂ nanocomposite films were prepared on Si wafers by cosputtering of SiO₂ and gold wires. Au/Si atomic ratios in Au/SiO₂ nanocomposite films were varied from 0.53 to 0.92 by controlling the length of gold wire to study the evolution of the crystallization of gold, the size of Au/SiO₂ nanocomposite particles, and the optical properties of as-deposited Au/SiO₂ nanocomposite films. An X-ray photoelectron spectroscopy reveals that Au exists as a metallic phase in the bulk of SiO₂ matrix. Dome-shaped Au/SiO₂ nanocomposite particles and both Au (1 1 1) and (2 0 0) planes were observed in a field-emission scanning electron microscopy and X-ray diffraction studies respectively. With an ultraviolet-visible, absorption peaks of Au/SiO₂ nanocomposite films were observed at 525 nm.     

Electron states in α-quartz (SiO2)

Valence electron states of α-quartz SiO₂ are calculated self-consistently using the pseudopotential method. Excellent agreement is found with photoemission and u.v.-absorption data. X-ray emission spectra are calculated in an OPW scheme and compared to experiments. While the Si- and O-K spectra agree well with experiment, the Si L_{2, 3} spectrum shows substantial differences. An explanation is offered based on the formation of amorphous Si in SiO₂ during electron irradiation.     

Synthesis and fine patterning of organic-inorganic composite SiO2-Al2O3 thick films

Organic-inorganic composite SiO₂-Al₂O₃ films have been prepared by sol-gel using methacryloxypropyl trimethoxysilane and aluminum sec-butoxide as the precursors. By introduction of organic groups into the inorganic backbone, the smooth and crack-free films could be readily achieved by a one-step dip-coating process, with the thickness up to 4.6 μm after being post-baked at 200 °C for 2 h. The films presented in an amorphous phase with an acceptable chemical homogeneity. Owing to the formation of chelate rings, the gel films showed a strong photosensitivity to ultraviolet light at 325 nm. The uniform fine patterns of SiO₂-Al₂O₃ thick films could be well defined by ultraviolet light imprinting simply using a mask. These performances of SiO₂-Al₂O₃ films indicate the potential for integrated optical systems.     

Embedded structure of silicon monoxide in SiO2 films

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_1.94 films are composed of silicon suboxides and the SiO₂ matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si₃O⁺ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO₂, and this structure most likely exists as a predominant form of Si₃O₄. The existence of Si-Si structures in the SiO₂ matrix will give rise to dense parts in loose glass networks.     

Optical properties of sol-gel fabricated Ni/SiO2 glass nanocomposites

Nickel nanoparticles were grown in silica glass by annealing of the sol-gel prepared silicate matrices doped with nickel nitrate. TEM characterization of Ni/SiO₂ glass proves the formation of isolated spherical nickel nanoparticles with mean sizes 6.7 and 20 nm depending on annealing conditions. The absorption and photoluminescence spectra of Ni/SiO₂ glasses were measured. In the absorption spectra, we observed the band related to the surface plasmon resonance (SPR) in Ni nanoparticles. The broadening of SPR was observed with decrease of Ni nanoparticle size. The width of the surface plasmon band decreases 1.5 times at the lowering of temperature from 293 to 2 K because of strong electron-phonon interaction. The spectra proved the creation of nickel oxide NiO clusters and Ni²⁺ ions in silica glass as well.     

Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates

A pulsed KrF excimer laser of irradiance of about 10⁸ W/cm² was utilized to synthesize Si nanocrystals on SiO₂/Si substrates. The results were compared with that ones obtained by applying low bias voltage to Si(1 0 0) target in order to control the kinetic energy of plasma ions. Glancing incidence X-ray diffraction spectra indicate the presence of silicon crystalline phases, i.e. (1 1 1) and (2 2 0), on SiO₂/Si substrates. The average Si nanocrystal size was estimated to be about 45 nm by using the Debye-Scherrer formula. Scanning electron microscopy and atomic force microscopy images showed the presence of nanoparticles of different size and shape. Their distribution exhibits a maximum concentration at 49 nm and a fraction of 14% at 15 nm.     

InP/SiO2纳米复合膜的微观结构和光学性质

应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP/SiO₂复合薄膜,并在几种条件下对这些薄膜进行退火.X射线光电子能谱和卢瑟福背散射实验结果表明,复合薄膜中InP和SiO₂的化学组分都大体上符合化学计量配比.X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒.磷气氛保护下的高温(520℃)退火可以消除复合薄膜中残存的In和In₂O₃并得到了纯InP/SiO₂纳米复合薄膜.实验观察到了室温下纳米复合薄膜的明显的光学吸收边蓝移现象和光学非线性的极大增强 关键词： InP 纳米晶粒 微观结构 光学性质     

Photoemission from condensed layers of H2 on Cu and Au

We have measured the photoemission of monolayers as well as thick films of H₂ molecules condensed onto Cu and Au. The adsorbed monolayer exhibits a relaxation energy of 1.75 eV whereas we see a bandlike 1s state for thick layers having a bandwidth of 1.2 eV. We also observe energy loss features which are in agreement with previous electron energy loss and optical absorption studies.     

Synthesis and characterization of core-shell structured SiO2@YVO4:Yb,Er microspheres

In this paper, the core-shell structured SiO₂@YVO₄:Yb³⁺,Er³⁺ microspheres have been successfully prepared via a facile sol-gel process followed by a heat treatment. X-ray diffraction, field emission scanning electron microscopy, energy disperse X-ray spectroscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence spectra were used to characterize the samples. The results reveal that the SiO₂ spheres have been successfully coated by YVO₄:Yb³⁺,Er³⁺ phosphors to form core-shell structures and the size of obtained microspheres has a uniform distribution. Additionally, the samples exhibit bright green luminescence under the excitation of a 980 nm laser diode. The photoluminescence intensity increases with the number of coatings. These core-shell structured SiO₂@YVO₄:Yb³⁺,Er³⁺ microspheres may have great potential in the fields of infrared detection and display devices.