Application of Sputter-Assisted EPMA to Depth Profile Analysis

 A common problem in depth profile measurement is the calibration of the depth scale. The new technique of sputter assisted electron probe microanalysis offers the possibility of calculating the composition as well as the depth scale solely from the acquired X-ray intensity data without further information, e.g. sputter rates. To achieve a depth resolution that is smaller than the depth of information of the electron probe, i.e. 0.1–1 μm, special deconvolution algorithms must be applied to the acquired data. To assess the capabilities of this new technique it was applied to a Ti/Al/Ti multilayer on Si under different measurement conditions. Quantitative depth profiles were obtained by application of a deconvolution algorithm based on maximum entropy analysis. By comparison of these profiles with AES depth profiles and AFM roughness measurements, it was shown that the limiting factor to the achievable depth resolution is the occurrence of surface roughening induced by the sputtering process rather than the relatively large depth of information of the electron probe. We conclude that for certain applications sputter-assisted EPMA can be regarded as a valid depth profiling technique with a depth resolution in the nm range.     

X-ray measurements with micro- and nanoresolution at BESSY

Capabilities of the KMC-2 beamline at BESSY for spatially resolved X-ray measurements with micro- and nanometer resolution have been reviewed. A combination of experimental methods of X-ray fluorescence analysis and extended X-ray absorption fine spectroscopy with X-ray standing waves technique was applied for the depth profiling of Si/W/Si layers with sub-nanometer resolution. The investigated layers were placed into the waveguide structure formed by two Au films to increase sensitivity and accuracy of the measurements. In-depth resolution on the order of 1 nm for the structure measurements has been obtained.     

Depth profile analysis of various titanium based coatings on steel and tungsten carbide using laser ablation inductively coupled plasma –“time of flight” mass spectrometry

A homogenized 193 nm ArF* laser ablation system coupled to an inductively coupled plasma-”Time of Flight”-mass spectrometer (LA-ICP-TOFMS) was tested for depth profiling analysis on different single-layer Ti based coatings on steel and W carbides. Laser parameters, such as repetition rate, pulse energy and spatial resolution were tested to allow optimum depth related calibration curves. The ablation process using a laser repetition rate of 3 Hz, 120 μm crater diameter, and 100 mJ output energy, leads to linear calibration curves independent of the drill time or peak area used for calibrating the thickness of the layer. The best depth resolution obtained (without beam splitter) was 0.20 μm per laser shot. The time resolution of the ICP-TOFMS of 102 ms integration time per isotope was sufficient for the determination of the drill time of the laser through the coatings into the matrix with better than 2.6% RSD (about 7 μm coating thickness, n = 7). Variation of the volume of the ablation cell was not influencing the depth resolution, which suggests that the depth resolution is governed by the ablation process. However, the application on the Ti(N,C) based single layer shows the potential of LA-ICP-TOFMS as a complementary technique for fast depth determinations on various coatings in the low to medium μm region.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

Depth profile analysis of various titanium based coatings on steel and tungsten carbide using laser ablation inductively coupled plasma--"time of flight" mass spectrometry

A homogenized 193 nm ArF* laser ablation system coupled to an inductively coupled plasma-"Time of Flight"-mass spectrometer (LA-ICP-TOFMS) was tested for depth profiling analysis on different single-layer Ti based coatings on steel and W carbides. Laser parameters, such as repetition rate, pulse energy and spatial resolution were tested to allow optimum depth related calibration curves. The ablation process using a laser repetition rate of 3 Hz, 120 microm crater diameter, and 100 mJ output energy, leads to linear calibration curves independent of the drill time or peak area used for calibrating the thickness of the layer. The best depth resolution obtained (without beam splitter) was 0.20 microm per laser shot. The time resolution of the ICP-TOFMS of 102 ms integration time per isotope was sufficient for the determination of the drill time of the laser through the coatings into the matrix with better than 2.6% RSD (about 7 microm coating thickness, n = 7). Variation of the volume of the ablation cell was not influencing the depth resolution, which suggests that the depth resolution is governed by the ablation process. However, the application on the Ti(N,C) based single layer shows the potential of LA-ICP-TOFMS as a complementary technique for fast depth determinations on various coatings in the low to medium microm region.     

Depth profiling of Co/Ti – silicide films using total reflection X-ray fluorescence (TXRF) spectrometry combined with low energy ion beam etching (IBE) for sample preparation

Solid state phase epitaxy (SSPE) by rapid thermal processing (RTP) of Co/Ti double layers deposited on (100)-Si substrates is a common technique for the production of buried CoSi₂-silicide conducting layers for microelectronics technology. The understanding of the processes during the SSPE silicide formation on the atomic scale needs the study of the elemental depth distributions with nanometer scale depth resolution of all multi-layer elemental constituents at different RTP conditions. A new experimental technique, the laterally resolved TXRF analysis line scan method across the bevelled section of the sample prepared by ex-situ ion beam sputter etching, was used to obtain the multi-element depth profiles. First results on the as evaporated Co/Ti (30 nm thick) double layer system prior to the RTP and on the final CoSi₂/Ti_xCo_ySi_z-system (160 nm thickness) after the RTP were obtained.     

Determining concentration depth profiles in fluorinated networks by means of electric force microscopy

By means of electric force microscopy, composition depth profiles were measured with nanometric resolution for a series of fluorinated networks. By mapping the dielectric permittivity along a line going from the surface to the bulk, we were able to experimentally access to the fluorine concentration profile. Obtained data show composition gradient lengths ranging from 30 nm to 80 nm in the near surface area for samples containing from 0.5 to 5 wt. % F, respectively. In contrast, no gradients of concentration were detected in bulk. This method has several advantages over other techniques because it allows profiling directly on a sectional cut of the sample. By combining the obtained results with x-ray photoelectron spectroscopy measurements, we were also able to quantify F/C ratio as a function of depth with nanoscale resolution.     

Nanometric resolution in glow discharge optical emission spectroscopy and Rutherford backscattering spectrometry depth profiling of metal (Cr,Al) nitride multilayers

In this work, we address the capability of glow discharge optical emission spectroscopy (GDOES) for fast and accurate depth profiling of multilayer nitride coatings down to the nanometer range. This is shown by resolving the particular case of CrN/AlN structures with individual thickness ranging from hundreds to few nanometers. In order to discriminate and identify artefacts in the GDOES depth profile due to the sputtering process, the layered structures were verified by Rutherford backscattering spectrometry (RBS) and scanning electron microscopy (SEM). The interfaces in the GDOES profiles for CrN/AlN structures are sharper than the ones measured for similar metal multilayers due to the lower sputtering rate of the nitrides. However, as a consequence of the crater shape, there is a linear degradation of the depth resolution with depth (approximately 40 nm/μm), saturating at a value of approximately half the thickness of the thinner layer. This limit is imposed by the simultaneous sputtering of consecutive layers. The ultimate GDOES depth resolution at the near surface region was estimated to be of 4–6 nm.     

Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence

A new method suitable for depth profiling of shallow layers on different materials is presented. It is based on a soft and planar ion sputtering combined with differential weighing, total-reflection X-ray fluorescence (TXRF) spectrometry and Tolansky interferometry. By means of a stepwise repetition of these techniques it is possible to determine both density/depth and concentration/depth profiles. The respective quantities are expressed in terms inherent only to the sample and traceable to the SI-units or subunits gram, nanometer and mole. It is a unique feature of this method that density/depth profiles can directly be obtained from measurements without any calibration or theoretical approximation. The method is applied to a Si wafer implanted with Co ions of 25 keV energy and a nominal dose of 1×10¹⁶ cm⁻². The depth resolution is shown to be <3 nm while a total depth of some 100 nm can be reached. The concentration/depth profile is compared with RBS measurements, wet-chemical etching plus TXRF and Monte Carlo simulations. In view of the fact that only similar but not exactly the same samples have been examined by these methods, a good correspondence can be noticed.     

Ultra-low-angle microtomy and static secondary ion mass spectrometry for molecular depth profiling of UV-curable acrylate multilayers at the nanoscale

Development of sustainable materials requires methods capable of probing the molecular composition of samples not only at the surface but also in depth. Static secondary ion mass spectrometry (S-SIMS) characterises the distribution of organic and inorganic compounds at the surface. Ultra-low-angle microtomy (ULAM) has been studied as an alternative or complementing method to the molecular depth profiling with, e.g. C₆₀⁺ projectiles. Acrylate-based multilayers relevant to industrial inkjet printing have been sectioned at a cutting angle below 1°. In this way, analysis of the section over a distance of 1 μm allows a depth range in the order of a few nm in the original sample to be achieved. Adequate procedures to optimise the ULAM step and minimise or control the cutting artefacts have been developed. The combination of ULAM with S-SIMS has allowed a depth resolution of 10 nm to be obtained for components at a distance of 35 μm from the surface.     

Chemical maps of patterned samples by microline‐imaging laser‐induced plasma spectrometry

The potential of a microline‐imaging laser‐induced plasma spectrometry (LIPS) system for surface and depth analysis of heterogeneous solid samples in air at atmospheric pressure has been demonstrated. A pulsed Nd : YAG laser beam operating at 532 nm, with a homogeneous energy distribution (flat top laser), was used to generate a microline plasma on the sample surface. Subsequent light from the microline plasma was resolved spectrally and spatially and detected with an imaging spectrograph and an intensified charged‐coupled device detector. A patterned metal sample was chosen as the most appropriate for this study. Three‐dimensional chemical maps of Ni and Cu from the edge connectors of a printed circuit board have been obtained. With this experimental configuration, the lateral resolution (limited by crater width) was 42 µm and the spatial resolution along the spectrometer slit was 17.4 µm. The results illustrate the capability of microline imaging for fast mapping of large‐area samples and for depth profiling purposes. Copyright © 2003 John Wiley & Sons, Ltd.     

ToF-S-SIMS molecular 3D analysis of micro-objects as an alternative to ion beam erosion at large depth: application to single inkjet dots

Molecular depth profiling is needed to develop high-tech materials optimised to the μm or even up to the nm scale. Recent progress in time-of-flight static secondary ion mass spectrometry (ToF-S-SIMS) offers perspectives to molecular depth profiling. However, at this moment, the methodology is not yet capable to deal with a range of materials science applications because of the limited depth range, the loss of intensity in the subsurface and the loss of depth resolution at large distances from the original surface. Therefore, the purpose of this paper is to develop a complementary approach for the molecular 3D analysis at large depth, using a combination of ultra-low angle microtomy (ULAM) and surface analysis of the sectioned material with ToF-S-SIMS. Single inkjet dots with a diameter of 100 μm and height of 22 μm on a PET substrate have been used as a test system for the methodology. It is demonstrated that the use of a diamond knife allows the molecular composition and distribution of components within the microscopic feature to be probed with a lateral resolution of 300 nm. Hence the methodology approaches the physical limit for ion imaging of organic components with local concentrations in the % range. In practice, the achievable depth resolution with ULAM-S-SIMS is ultimately limited by the surface roughness of the section. Careful optimisation of the ULAM step has resulted in a surface roughness within 6 nm (R _a value) at a depth of 21 μm. This offers perspective to achieve 3D analysis with a depth resolution as good as 18 nm at such a large distance from the surface. Furthermore, the ULAM-S-SIMS approach is applicable to materials unamenable to ion beam erosion. However, the method is limited to dealing with, for instance, Si or glass substrates that cannot be sectioned with a microtomy knife. Furthermore, sufficient adhesion between stacked layers or between the coating and substrate is required. However, it is found that the approach is applicable to a wide variety of industrially important (multi)layers of polymers on a polymer substrate.     

Incident angle and energy dependences of low‐energy Ar+ ion sputtering of GaAs/AlAs multilayered system

Dependences of the depth resolution in Auger electron spectroscopy sputter‐depth profiling of a GaAs/AlAs superlattice reference material on the incident angle and energy of primary Ar⁺ ions were investigated. The results revealed that the depth resolution is improved for the lower primary energy as a square root of the primary energy of ions at both the incident angles of 50° and 70° , except for 100 eV at 50° , where the significant deterioration of the depth resolution is induced by the preferential sputtering of As in AlAs, and the difference in the etching rate between GaAs and AlAs. The deterioration of the depth resolution, i.e. the difference in the etching rate and the preferential sputtering, observed for 100 eV at 50° was suppressed by changing the incident angle of ions from 50° to 70° , resulting in the high‐depth resolution of ～1.3 nm. The present results revealed that the glancing incidence of primary ions is effective to not only reducing the atomic mixing but also suppressing the difference in the etching rates between GaAs and AlAs and the preferential sputtering in the GaAs/AlAs multilayered system. The results also suggest that careful attention is required for the optimization of conditions of sputter‐depth profiling using GaAs/AlAs superlattice materials under low‐energy ion irradiation. Copyright © 2009 John Wiley & Sons, Ltd.     

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

B‐doped Si multiple delta‐layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta‐layer spacing were grown by ion beam sputter deposition (IBSD). The nominal spacing of the MDL for shallow junction analysis is 10 nm and that for high energy SIMS is 50 nm. The total thickness of the film was certified by high resolution transmission electron microscopy (HR‐TEM). The B‐doped Si MDLs can be used to evaluate SIMS depth resolution and to calibrate the depth scale. A consistency check of the calibration of stylus profilometers for measurement of sputter depth is another possible application. The crater depths measured by a stylus profilometer showed a good linear relationship with the thickness measured from SIMS profiling using the calibrated film thickness for depth scale calibration. The sputtering rate of the amorphous Si thin film grown by sputter deposition was found to be the same as that of the crystalline Si substrate, which means that the sputtering rate measured with these CRMs can be applied to a real analysis of crystalline Si. Copyright © 2005 John Wiley & Sons, Ltd.     

Feasibility of depth profiling of Zn-based coatings by laser ablation inductively coupled plasma optical emission and mass spectrometry using infrared Nd:YAG and ArF* lasers

The feasibility of depth profiling of zinc-coated iron sheets by laser ablation (LA) was studied using an Nd:YAG laser (1064 nm) with inductively coupled plasma optical emission spectrometry (ICP-OES), and an excimer ArF* laser (193 nm) with a beam homogenizer. The latter was coupled to an ICP with mass spectrometry (ICP-MS). Fixed-spot ablation was applied. Both LA systems were capable of providing depth profiles that approach the profiles obtained by glow discharge optical emission spectroscopy (GD-OES) and electron probe X-ray microanalysis (EPXMA). For Nd:YAG laser an artefact consisting of zinc depth profile signal tailing appeared, enlarging thus erroneously diffusional coating–substrate interface profile. However, the ArF* system partially reduced but not suppressed that phenomenon. For both LA systems the Fe signal from the substrate increased with depth as expected and reached a plateau. The depth resolution (depth range corresponding to 84%–16% change in the full signal) achieved was several micrometers. Ablation rate was found to depend on ablation spot area at constant irradiance. Consequently, ablated volume per shot dependence on pulse energy exhibits deviation from linear course.     

Nondestructive three-dimensional analysis of layered polymer structures with chemical imaging

Three-dimensional (3D) chemical information was obtained by means of a combination of two-dimensional attenuated total reflection Fourier transform infrared (ATR-FT-IR) imaging with a focal plane array detector and variable angle depth profiling. Since the penetration depth of the evanescent wave in ATR spectroscopy is not limited by diffraction, it was possible to resolve thin sandwiched polymer layers nondestructively within a stack of polymer layers. Chemical images were obtained from layers of different thickness of the laminate by moving a custom-made aperture to specific positions on the condenser lens of the ATR accessory. Sequences of absorption images detect the successive appearance of thin, buried layers of polybutylmethacrylate (d(PBMA) = 400 nm) and polycarbonate (d(TMPC) = 300 nm) in different depths of the stack of polymer layers. The depth resolution of variable-angle ATR-FT-IR imaging is sufficiently high to detect surface roughness at the interface between different polymer layers. Two different stacks of polymers with reordered sandwich-layers were imaged simultaneously, demonstrating the potential of variable angle ATR-FT-IR for 3D-imaging of a sample with xyz-heterogeneity, which can be a powerful analytical technique for materials science and biomedical research.     

Use of C60 cluster projectiles for sputter depth profiling of polycrystalline metals

We have investigated the merits of fullerene cluster ions as projectiles in time‐of‐flight secondary neutral mass spectrometry (ToF‐SNMS) sputter depth profiling of an Ni:Cr multilayer sample similar to the corresponding NIST depth profiling standard. It is shown that sputter erosion under bombardment with C₆₀⁺ ions of kinetic energies between 10 and 20 keV provides good depth resolution corresponding to interface widths of several nanometres. This depth resolution is maintained during the complete removal of the multilayer stack with a total thickness of 500 nm. This finding is in contrast to the case where atomic Ga⁺ projectile ions of comparable kinetic energy are used, demonstrating the unique features of cluster projectiles in sputter depth profiling. Copyright © 2004 John Wiley & Sons, Ltd.     

Quantitative analysis of the Ge concentration in a SiGe quantum well: comparison of low-energy RBS and SIMS measurements

The germanium concentration and the position and thickness of the quantum well in molecular beam epitaxy (MBE)-grown SiGe were quantitatively analyzed via low-energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). In these samples, the concentrations of Si and Ge were assumed to be constant, except for the quantum well, where the germanium concentration was lower. The thickness of the analyzed quantum well was about 12 nm and it was situated at a depth of about 60 nm below the surface. A dip showed up in the RBS spectra due to the lower germanium concentration in the quantum well, and this was evaluated. Good depth resolution was required in order to obtain quantitative results, and this was obtained by choosing a primary energy of 500 keV and a tilt angle of 51° with respect to the surface normal. Quantitative information was deduced from the raw data by comparing it with SIMNRA simulated spectra. The SIMS measurements were performed with oxygen primary ions. Given the response function of the SIMS instrument (the SIMS depth profile of the germanium delta (δ) layer), and using the forward convolution (point-to-point convolution) model, it is possible to determine the germanium concentration and the thickness of the analyzed quantum well from the raw SIMS data. The aim of this work was to compare the results obtained via RBS and SIMS and to show their potential for use in the semiconductor and microelectronics industry. The detection of trace elements (here the doping element antimony) that could not be evaluated with RBS in low-energy mode is also demonstrated using SIMS instead.     

Improvement of depth resolution of ADF-SCEM by deconvolution: effects of electron energy loss and chromatic aberration on depth resolution

Scanning confocal electron microscopy (SCEM) is a new imaging technique that is capable of depth sectioning with nanometer-scale depth resolution. However, the depth resolution in the optical axis direction (Z) is worse than might be expected on the basis of the vertical electron probe size calculated with the existence of spherical aberration. To investigate the origin of the degradation, the effects of electron energy loss and chromatic aberration on the depth resolution of annular dark-field SCEM were studied through both experiments and computational simulations. The simulation results obtained by taking these two factors into consideration coincided well with those obtained by experiments, which proved that electron energy loss and chromatic aberration cause blurs at the overfocus sides of the Z-direction intensity profiles rather than degrade the depth resolution much. In addition, a deconvolution method using a simulated point spread function, which combined two Gaussian functions, was adopted to process the XZ-slice images obtained both from experiments and simulations. As a result, the blurs induced by energy loss and chromatic aberration were successfully removed, and there was also about 30% improvement in the depth resolution in deconvoluting the experimental XZ-slice image.     

Systematic line selection for online coating thickness measurements of galvanised sheet steel using LIBS

LIBS can be used as an online method of characterizing galvanized coatings on sheet steel moving through a production line. The traversing sheet steel is irradiated with a series of single laser bursts, each at a different position on the sheet steel. An ablation depth in the same range as the coating thickness (about 10 μm) is achieved by using a Nd:YAG laser at 1064 nm in collinear double-pulse mode. The coating thickness is determined from the ratio of the intensities of an iron line and a zinc line measured at a burst energy high enough to penetrate the coating with a single burst. Experiments at different burst energies were carried out to optimize the thickness resolution, and a method of systematically selecting iron and zinc lines was deduced, which is based on multivariate data analysis (MVDA) of the intensity ratios calculated for a set of 6 zinc lines and 21 iron lines. A temperature correction was applied, because the parameters of the plasma change with burst energy, and the influence of this on the thickness resolution is discussed. The ambient atmosphere present (air, Ar, N₂) as well as self-absorption of spectral lines both have an influence on the thickness resolution. At optimum conditions, a thickness measurement accuracy of better than 150 nm was obtained for a set of electrolytic galvanized sheet steels with coating thicknesses in the range 4.1–11.2 μm.