Thickness and temperature dependence of subsidiary absorption thresholds in yttrium-iron-garnet thin films

The microwave subsidiary absorption threshold in tangentially magnetized yttrium-iron-garnet (YIG) films was measured as a function of the static magnetic field, film thickness and decrease in the 0.3–3 μm range is observed. The effect is explained quantitatively by using modified Damon-Eshbach dispersion relations which take into account exchange interactions.

The effect of temperature on h_crit, the smallest threshold field amplitude, in the 250<T< 450 K temperature range can be expressed by an empirical relationship h_crit M_s(T)^-1.6 where M_s is the saturation magnetization. This h_crit vs M_s relationship is similar to that obtained for the magnetization dependence of parallel pump thresholds in Li-Ti ferrite compounds.     

Transparent conductive oxide thin films of CdTe-doped indium oxide prepared by pulsed-laser deposition

Transparent conducting oxide thin film CdTe-doped indium oxide (In₂O₃) has been grown by pulsed-laser deposition from a target of CdTe powder embedded in metallic indium. The electro-optical and structural properties were investigated as a function of oxygen partial pressure (PO₂) and substrate temperature (T_s). A film deposited at T_s=420 °C and PO₂=4 Pa shows the minimum resistivity 7.5×10⁻⁴ Ω cm, its optical transmission is 83% and the carrier concentration was 8.9×10²⁰ cm³. The optical band gap and the average roughness of that sample were 3.6 eV and 6.45 Å, respectively. X-ray diffraction studies indicated that the films were polycrystalline. This material is a good candidate for being used as transparent conductor in the CdTe–CdS solar cell.     

Revealing the A_(1g)-type strain effect on superconductivity and nematicity in FeSe thin flake

The driving mechanism of nematicity and its twist with superconductivity in iron-based superconductors are still under debate.Recently,a dominant B_(1 g)-type strain effect on superconductivity is observed in underdoped iron-pnictides superconductors Ba(Fe_(1-x)Co_x)_2 As_2,suggesting a strong interplay between nematicity and superconductivity.Since the long-range spin order is absent in FeSe superconductor,whether a similar strain effect could be also observed or not is an interesting question.Here,by utilizing a flexible film as substrate,we successfully achieve a wide-range-strain tuning of FeSe thin flake,in which both the tensile and compressive strain could reach up to ～0.7%,and systematically study the strain effect on both superconducting and nematic transition(T_c and T_s) in the FeSe thin flake.Our results reveal a predominant A_(1 g)-type strain effect on T_c.Meanwhile,T_s exhibits a monotonic anti-correlation with T_c and the maximum T_c reaches to 12 K when T_s is strongly suppressed under the maximum compressive strain.Finally,in comparison with the results in the underdoped Ba(Fe_(1-x)Co_x)_2 As_2,the absence of B_(1 g)-type strain effect in FeSe further supports the role of stripe-type spin fluctuations on superconductivity.In addition,our work also supports that the orbital degree of freedom plays a key role to drive the nematic transition in FeSe.     

Segregations and desorptions of Ge atoms in nanocomposite Si_(1-x)Ge_x films during high-temperature annealing

Nanocomposite Si_(1-x)Gex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).The segregations and desorptions of Ge atoms,which dominate the structural evolutions of the films during high-temperature annealing,are investigated.When the annealing temperature(Ta)is 900~℃,the nanocomposite Si_(1-x)Gex films are well crystallized,and nanocrystals(NCs)with the core-shell structure form in the films.After being annealed at 1000~℃(above the melting point of bulk Ge),Ge atoms accumulate on the surfaces of Ge-rich films,whereas pits appear on films with lower Ge content,resulting from desorption.Meanwhile,voids are observed in the films.A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.     

Enhanced magnetic properties of Nd–Fe–B thin films crystallized by heat treatment

Nd₂Fe₁₄B Φ phase crystallites were formed in Nd_16.7Fe_65.5B_17.8 thin films prepared by RF sputtering with subsequent heat treatment. The 2 μm-thick films were deposited onto 0.1 mm Mo sheets at an average substrate temperature (T_s) of 365°C. The enhanced magnetic properties of the magnetically anisotropic thin films were investigated using different heating rates (h_r) of 10°C, 20°C, 50°C and 100°C/min in an annealing experiment. Transformation from the amorphous phase to the crystalline phase is clearly manifested by the formation of fine crystallites embedded as a columnar matrix of Nd₂Fe₁₄B phase. High-resolution scanning electron microscope data of the cross-section of the annealed films show columnar stacking of Nd₂Fe₁₄B crystallites with sizes <500 nm. Transmission electron microscope observations revealed that the microstructure of these films having out-of-plane magnetization consists of uniformly distributed Φ phase with grain size around 400 nm together with small Nd rich particles. This grain size of Φ phase is comparable to the single domain particle diameter of Nd₂Fe₁₄B. Significant change in _iH_c, 4πM_r and 4πM_s with h_r was confirmed. Annealing conditions with a heating rate of 50°C/min to an annealing temperature (T_a) of 650°C for 30 min was consequently found to give optimum properties for the NdFeB thin films. The resulting magnetic properties, considered to be the effect of varying h_r were _iH_c= 1307–1357 kA/m, 4πM_r=0.78–1.06 T and 4πM_s=0.81–1.07 T.     

Dry-etching processes for high-temperature superconductors

Patterning of thin films and multilevel structures of high-temperature superconductors is a key technology for microelectronic applications. We performed a comparative study of Ion Beam Etching (IBE) and Reactive Ion Etching (RIE) processes for YBa₂Cu₃O_7−δ thin films. The RIE process with a pure chlorine plasma yielded small etching rates, caused by chemical modifications of the sample surface which result in a passivation layer reducing the chemical etching rate. Using IBE, microstructures down to the 1 μm regime could be fabricated without reducing the critical temperature T_c and the critical current density J_c of the material. Etching rates up to 40 nm/min could be achieved without deteriorating the properties of the superconducting film by cooling the sample effectively during the etching process. The influence of the etching process on J_c was investigated by imaging the spatial distribution of the critical current along the patterned microstructures using Low-Temperature Scanning Electron Microscopy (LTSEM).     

Substrate dependent growth studies of MgB2 films by electrocrystallization

The comparative study of MgB₂ film growth on Al₂O₃ and glass substrate by electrocrystallization technique is discussed. The precursor magnesium films were deposited by vacuum evaporation method. These magnesium films were then used as electrode for the growth of MgB₂ films by electrocrystallization. The structural, morphological and superconducting properties of the electrocrystallized MgB₂ films on Al₂O₃ substrate were examined by using XRD, SEM and electrical resistivity measurement techniques and compared with that of MgB₂ films grown on glass substrate. The films deposited on Al₂O₃ substrates showed enhanced crystallinity and relatively higher T_c value compared to films deposited on glass substrates.     

Anomalous magnetic behavior of the Co0.53Ga0.47 spin glass above the freezing temperature

We present here the detailed analysis of the magnetic behavior of the Co_0.53Ga_0.47 alloy, especially at temperatures above the freezing temperature T_f = 10 K. Low field static magnetization measurements were performed by using the SQUID magnetometer in the temperature range 5–65 K and magnetic fields up to 100 Oe. The temperature dependence of the field cooled susceptibility π_FC(T) at T > T_f has an anomaly, which is displayed in the double change of the curvature near T_s = 24 K. The data of magnetization M_FC in an external field H lie on a universal curve M_FC(H/T) at temperatures T_f < T < T_s. The plots of π^-1_FC(T) and non-linear magnetic susceptibility π^nl_FC(T^-3) are linear lines in the temperature range T_f−T_s. The strong deviation of π^-1_FC(T) and π^nl_FC(T^-3) from straight line, taking place at T T_s, indicates that T_s is an upper temperature limit of the classical superparamagnetic behavior with the constant cluster moment. The results suggest that such phenomena may be fairly universal for spin glasses.     

Effect of substrate bias on SE, XPS and XAES studies of diamond-like carbon films deposited by saddle field fast atom beam source

This paper reports the effect of positive substrate bias (V_s) varying from 0 to 180 V on the spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and X-ray Auger electron spectroscopy (XAES) studies of diamond-like carbon (DLC) films deposited using CH₄ gas as a feedstock into a saddle field fast atom beam (FAB) source. The values of optical constants like refractive index (n) and extinction coefficient (k) of the deposited DLC films were determined using a two phase model. The values of ‘n’ were found to fall in the range from 1.505 to 1.720 and ‘k’ from 0.03 to 0.125 by application of different values of V_s. Value of these optical constants were found to decrease with the increase of substrate bias up to 90 V and then increase beyond this value. Position of C 1s peak evaluated from XPS data was found to occur at 286.09±0.18 eV in DLC films deposited by application of different values of V_s. Observation of full width at half maximum (FWHM) (τ) value (1.928 eV at V_s=0 V, 2.0 eV at V_s=90 V and 1.89 eV at V_s=180 V) clearly hinted the existence of a point of inflection in the properties of DLC films deposited using FAB source this way. A parameter ‘D’ defined as the distance between the maximum of positive going excursion and the minimum of negative going excursion was calculated in the derivative XAES spectra. The values of ‘D’ evaluated from XAES data for DLC films were found to be 14.8, 14.5 and 15.2 at V_s=0, 90 and 180 V, respectively. The sp² percentage was calculated for samples deposited this way and was found to be low and lie approximately at 5.6, 2.8, 2.3, 5.7 and 11.5 for different values of V_s=0, 50, 90, 150 and 180 V. The sp³ content percentage and sp³/sp² ratio was found to be 94.4 and 16.7, 97.7 and 42.5 at V_s=0 and 90 V, respectively. Beyond V_s=90 V these values started decreasing. Mainly, a point of inflection in all the properties of DLC films studied over here at around 90 V of applied substrate bias has been observed, which has been explained on the basis of existing theories in the literature.     

电极间距对μc-Si_(1-x)Ge_x:H薄膜结构特性的影响

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,使用SiH4加GeH4的反应气源组合生长微晶硅锗(μc-Si1-x Gex:H)薄膜.研究了电极间距对μc-Si1-x Gex:H薄膜结构特性的影响.发现薄膜中的Ge含量随电极间距的降低逐渐增加.当电极间距降至7 mm时,μc-Si1-x Gex:H薄膜具有较大的晶粒尺寸并呈现较强的(220)择优取向,同时具有较低的微结构因子.通过薄膜结构特性的变化分析了反应气源的分解状态,认为Ge含量的提高主要是SiH4的分解率降低所导致的.在较窄的电极间距(7 mm)下,等离子体中GeH3基团的比例较大,增强了Ge前驱物的扩散能力,使μc-Si1-x Gex:H薄膜的质量得到提高.     

The effects of substrate temperature on the superconducting properties of Tl2Ca2Ba2Cu3O10 films sputter-deposited from stoichiometric oxide targets

The annealing characteristics and the superconducting properties of Tl₂Ca₂Ba₂Cu₃O₁₀ thin films sputter-deposited onto yttrium- stabilized ZrO₂ substrate at up to 500°C from two stoichiometric oxide targets are reported. The films deposited at 400–500°C were found to require a lower post-annealing temperature than the films deposited at lower temperatures to attain the highest T_c superconducting state, due to a more pronounced Ba diffusion toward the substrate as indicated by their secondary ion mass spectrometry depth profiles. The highest T_c achieved tends to degrade with increasing substrate temperatures, a zero resistance T_c of 121 and ≈90 K, respectively, being observed for the films deposited at -ambient temperature and at 500°C. The formation of the highest T_c phase (Tl₂Ca₂Ba₂Cu₃O₁₀) generally is associated with a sheet type of crystal growth morphology with smooth and aligned surfaces which can be obtained only from the films capable of sustaining prolonged annealing at 900°C. Annealing at lower temperatures (≈860°C) results in the formation of rod or sphere type of morphologies with rough and randomly oriented crystals and the lower T_c phases such as Tl₂Ca₁Ba₂Cu₂O₈.     

MgB2超导膜的厚度与其Jc(5K,0T)的关系

通过混合物理化学气相沉积法 (hybrid physical-chemical vapor deposition, HPCVD), 在(000l) SiC 衬底上制得一系列从10 nm到8 μm的MgB₂超导膜样品, 并对它们的形貌、超导转变温度T_c 和临界电流密度J_c与膜厚度的关系进行了研究. 观察到T_c随膜厚度增加上升到最大值后, 尽管膜继续增厚, 但T_c值保持近乎平稳, 而J_c则先随膜厚度增加上升到最高值后, 继而则随膜的厚度的增加而下降. MgB₂膜的T_c(0)和T_c(onset)值与膜厚的关系基本一致, T_c(0)在膜厚为230 nm处达到最大值T_c(0)=41.4 K, 而J_c(5K,0T)在膜厚为100 nm时达到最大值, J_c (5 K, 0 T)=2.3×10⁸A·cm^-2, 这也说明了我们能用HPCVD方法制备出高质量干净MgB₂超导膜. 本文研究的超导膜厚度变化跨度非常大, 从10 nm级的超薄膜到100 nm级的薄膜, 再到几微米的厚膜, 如此T_c和J_c对膜厚度变化的依赖就有了较完整、成体系的研究. 并且本文的工作对MgB₂超导薄膜制备的厚度选取具有实际应用意义. 关键词： 2超导膜')" href="#">MgB₂超导膜 混合物理化学气相沉积法 厚度 临界电流密度     

Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr2CrWO6/SrTiO3 films

High-quality Sr₂CrWO₆ (SCWO) films have been grown on SrTiO₃ (STO) substrate by pulsed laser deposition under low oxygen pressure. With decrease of the film thickness, a drastic conductivity increase is observed. The Hall measurements show that the thicker the film, the lower the carrier density. An extrinsic mechanism of charge doping due to the dominance of oxygen vacancies at SCWO/STO interfaces is proposed. The distribution and gradient of carrier concentration in SCWO films are considered to be related to this phenomenon. Resistivity behavior observed in these films is found to follow the variable range hopping model. It is revealed that with increase of the film thickness, the extent of disorder in the lattice increases, which gives a clear evidence of disorder-induced localization charge carriers in these films. Magnetoresistance measurements show that there is a negative magnetoresistance in SCWO films, which is considered to be caused by the magnetic scattering of magnetic elements Cr³⁺ and W⁵⁺. In addition, a sign reversal of anisotropic magnetoresistance (AMR) in SCWO film is observed for the first time, when the temperature varies across a characteristic value, T_M. Magnetization—temperature measurements demonstrate that this AMR sign reversal is caused by the direction transition of easy axis of magnetization from the in-plane ferromagnetic order at T > T_M to the out-of-plane at T < T_M.     

Ge20Sb15Se65薄膜的热致光学特性变化研究

采用磁控溅射法制备了Ge₂₀Sb₁₅Se₆₅薄膜, 研究热处理温度(150—400 ℃)对薄膜光学特性的影响. 通过分光光度计、X射线衍射仪、显微拉曼光谱仪对热处理前后薄膜样品 的光学特性和微观结构进行了表征, 并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数. 结果表明当退火温度(T_a)小于薄膜的玻璃转化温度(T_g)时,薄膜的光学带隙(E_g^opt)随着退火温度的增加由1.845 eV上升至1.932 eV, 而折射率由2.61降至2.54; 当退火温度大于薄膜的玻璃转化温度时,薄膜的光学带隙随退火温度的增加由1.932 eV降至1.822 eV, 折射率则由2.54增至2.71. 最后利用Mott和Davis提出的非晶材料由非晶到晶态的结构转变模型对结果进行了解释, 并通过薄膜XRD和Raman光谱进一步验证了结构变化是薄膜热致变化的重要原因. 关键词： 20Sb₁₅Se₆₅薄膜')" href="#">Ge₂₀Sb₁₅Se₆₅薄膜 热处理 光学带隙 折射率     

Dynamic contribution to the fishtail effect in a twin-free DyBa2Cu3O7−δ single crystal

Superconducting current densities j_s and dynamic relaxation rates Q d ln j_s/d In(dB_e/dt), where dB_e/dt is the sweep rate of the external magnetic field B_e, were measured as a function of temperature (5 K < T < 65 K) in magnetic fields up to 7 T on a twin-free DyBa₂Cu₃O_7−δ single crystal by means of a high-sensitivity capacitance torque magnetometer. Above 15 K, we observe a “fishtail” effect, i.e. a pronounced minimum in the j_s(B_e) curve at fields around B_e = 1 T. The relaxation rate Q shows an anomalous increase at low fields which is correlated to the minimum in the j_s(B_e) curve. Both the j_s versus B_e and Q versus B_e data are used as input parameters into the generalized inversion scheme developed by Schnack et al. [Phys. Rev. B 48 (1993) 13178] to calculate the true critical current density j_c which is by definition independent of relaxation effects. Interestingly, the j_c(B_e, T) curves derived in this way do not show a minimum. This points clearly to a dynamic contribution to the fishtail effect. The true critical current density j_c(B_e, T) decreases weakly with increasing B_e over the entire measured temperature and field range, as expected for single-vortex pinning. This indicates that the observed fishtail effect is not caused by a crossover from single-vortex pinning to pinning of flux bundles. The temperature dependence of j_c is in good agreement with the predictions of a model based on single-vortex pinning caused by spatial fluctuations in the charge-carrier mean free path.     

硼膜制备工艺、微观结构及其在硼化镁超导约瑟夫森结中的应用

MgB_2材料具备临界转变温度较高、相干长度大、临界电流和临界磁场高等优点,被认为有替代Nb基超导材料的潜力.研究了不同温度下以化学气相沉积法制备的硼(B)薄膜的微观结构.实验结果表明:较低温度沉积的B先驱薄膜为无定形B膜,可以与Mg蒸气反应生成MgB_2超导薄膜;当沉积温度高于550?C时,所得硼薄膜为晶型薄膜;以晶型硼薄膜为先驱膜在镁蒸气中退火,不能生成硼化镁超导薄膜.利用晶型B膜的这一特点,成功制备了以晶型硼薄膜为介质层的硼化镁超导约瑟夫森结.     

微晶硅锗薄膜作为近红外光吸收层在硅基薄膜太阳电池中的应用

采用射频等离子体增强化学气相沉积技术,制备了具有一定晶化率不同Ge含量的氢化微晶硅锗(μcSi1-xGex:H)薄膜.通过Ⅹ射线荧光谱、拉曼光谱、X射线衍射谱、傅里叶红外谱、吸收系数谱和电导率的测试,表征了μc-Si_(1-x)Ge_x:H的材料微结构随Ge含量的演变.研究表明:提高Ge含量可以增强μc-Si_(1-x)Ge_x:H薄膜的吸收系数.将其应用到硅基薄膜太阳电池的本征层中可以有效提高电池的短路电流密度(J_(sc)).特别是在电池厚度较薄或陷光不充分的情况下,长波响应的提高会更为显著.应用ZnO衬底后,在Ge含量分别为9%和27%时,μc-Si_(1-x)Ge_x:H太阳电池的转换效率均超过了7%.最后,将μc-Si_(1-x)Ge_x:H太阳电池应用在双结叠层太阳电池的底电池中,发现μc-Si_(0.73)Ge_(0.27):H底电池在厚度为800 nm时即可得到比1700 nm厚微晶硅(μc-Si:H)底电池更高的长波响应.以上结果体现μc-Si_(1-x)Ge_x:H太阳电池作为高效近红外光吸收层,在硅基薄膜太阳电池中应用的前景.     

700℃退火下铝调制镍硅锗薄膜的外延生长机理

文章研究了在700℃退火下,铝插入层调制镍和硅锗合金反应形成单相镍硅锗化物的生长机理.透射电镜测试结果表明,镍硅锗薄膜和硅锗衬底基本达到赝晶生长;二次质谱仪和卢瑟福沟道背散射测试结果表明,在镍硅锗薄膜形成的过程中,铝原子大部分移动到镍硅锗薄膜的表面.研究结果表明,铝原子的存在延迟了镍和硅锗合金的反应,镍硅锗薄膜的热稳定性和均匀性都得到了提高.最后,基于上述实验结果给出了铝原子调制形成外延镍硅锗薄膜的生长机理.     

Temperature range for critical scaling behavior in YBCO thin films

The magnetic and transport properties of thin films and single crystals of YBa₂Cu₃O_7−δ are compared. For measurements on thin films, the apparent critical scaling behavior is observed to exist over a temperature range from 87 K down to the vortex-glass transition T_g = 84.2 K at 2.5 kOE and from 83 K to T_g = 70.4 K at 50 kOe. The inflection point (T_inf) in temperature dependent resistivity measurements R(T) coincides with the highest temperature at which current-voltage (I–V) characteristics are found to scale. The region between T_g and T_inf shows a behavior characteristics of thermally activated flux motion, while above T_inf I–V curves show ohmic behavior. No similar scaling region is observed in some single crystal results, supporting recent claims that the phase transition in some single crystals may not be critical in nature (of order greater than one).     

Buffers for high temperature superconductor coatings. Low temperature growth of CeO2 films by metal–organic chemical vapor deposition and their implementation as buffers

Smooth, epitaxial cerium dioxide thin films have been grown in-situ in the 450–650°C temperature range on (001) yttria-stabilized zirconia (YSZ) substrates by metal–organic chemical vapor deposition (MOCVD) using a new fluorine-free liquid Ce precursor. As assessed by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy (HREM), the epitaxial films exhibit a columnar microstructure with atomically abrupt film-substrate interfaces and with only minor bending of the crystal plane parallel to the substrate surface near the interface and at the column boundaries. With fixed precursor temperature and gas flow rate, the CeO₂ growth rate decreases from 10 Å/min at 450°C to 6.5 Å/min at 540°C. The root-mean-square roughness of the films also decreases from 15.5 Å at 450°C to 4.3 Å at 540°C. High-quality, epitaxial YBa₂C₃O_7−x films have been successfully deposited on these MOCVD-derived CeO₂ films grown at temperatures as low as 540°C. They exhibit T_c=86.5 K and J_c=1.08×10⁶ A/cm² at 77.4 K.