Calculation of energy characteristics for Si<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>–Si structures with single quantum wells

Energy characteristics of Si_1–x Ge _x –Si quantum-size structures with single quantum wells were calculated numerically based on a four-band k·p method. Analytical expressions for the Luttinger parameters are obtained as functions of the component composition of Si_1–x Ge _x compounds. Analytical expressions for the energy ħω of optical band-to-band transitions are obtained in an effective mass approximation and agree well with numerical calculations by the k·p method. This allows one to determine accurately a range of changes while varying the component compositions and thickness of the active and barrier layers.     

Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties

The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In _x Ga_{1 − x} As and In _x Ga_{1 − x} P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In _x Ga_{1 − x} As and In _x Ga_{1 − x} P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.     

Superradiative rare gas halide lasers excited by electric discharge

Nd_xLa_1−xP₅O₁₄ (0.25≦x≦1) single crystals, placed within a confocal optical resonator, were pumped with ruby laser fundamental and second-harmonic nanosecond pulses. In both cases laser oscillations at 1.05 μm exceeding in duration many times the pumping pulse were obtained.     

Quantum cyclotron resonance of two-dimensional holes in the Ge layers of Ge-Ge1−x Six heterostructures

Quantum cyclotron resonance of two-dimensional holes in strained germanium layers of the periodic heterostructure Ge-Ge_1−x Si_x has been observed and investigated for the first time. The results are compared with the data of electrophysical measurements in strong magnetic fields. A clear dependence of the magnitude of the longitudinal effective mass of the holes on the absolute magnitude of the elastic deformation of the germanium layers (splitting energy of the hole subbands) is observed. Fiz. Tverd. Tela (St. Petersburg) 39, 2096–2100 (November 1997)     

Photoselective laser photo-ion microscopy with 5 nm resolution

Spectral selectivity has been attained in the method of field-ion microscopy with a spatial resolution of about 5 nm and time-of-flight determination of the photo-ion masses. Light-absorbing CdS_xSe_1−x nanocrystals in a transparent glass matrix are detected by irradiating field tips made from red light filters with copper-vapor laser radiation. The nanocrystals appeared in the photo-ion images as bright spots on a dark background. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 7, 450–454 (10 April 1998)     

Superionic conductivity of the heterovalent solid solutions R 1−x M x F 3−x (R=REE, M=Ca, Ba) with tysonite-type structure

The fluorine-ion conductivity of anion-deficient solid solutions R _1−x Ca_xF_3−x and R _1−x Ba_xF_3−x having the tysonite (LaF₃) structure was investigated by the impedance spectroscopy method. R _1−x Ca_xF_3−x (R=La, Pr, Nd, Sm, Gd, Tb, Dy, Ho) and R _1−x Ba_xF_3−x (R=La, Pr, Nd) single crystals were grown from the melt by the Bridgman-Stockbarger method. The electrophysical measurements were performed in the frequency range 5−5×10⁵ and temperature range 300–700 K. The temperature dependences of the electrical conductivity for the crystals studied is determined by the migration of fluorine anions along various structural positions. It is shown that, from the standpoint of increasing the conductivity of tysonite matrices RF₃ (R=La, Pr, Nd), doping by CaF₂ and BaF₂ is less promising than SrF₂. Fiz. Tverd. Tela (St. Petersburg) 41, 638–640 (April 1999)     

Formation of multilayer strained-layer heterostructures by liquid epitaxy. II. Simulation of the fabrication of heterostructures based on indium-arsenic-antimony-bismuth solid solutions

The formation of InAs_1−x−y Sb_xBi_y/InSb and InAs_1−x−y Sb_xBi_y/InSb_yBi_y strained-layer heterostructures by “capillary” LPE is simulated. The laws governing the dependence of the gap width E _g and the thickness d of the epilayers on the conditions of the process are revealed. It is shown that because of the sharp increase in the rate of epitaxial deposition as the LPE temperature is raised, the successful growth of epilayers of subcritical thickness is possible only up to T<550 K. The influence of the rate of laminar flow of the liquid in the growth channel in a relaxation regime and in a continuous pumping regime on the uniformity of the distribution of E _g and d in the epitaxial heterostructures is analyzed. Effective combinations of parameters for carrying out the process, which ensure the achievement of E _g ≈0.1 eV (77 K) in the active layers with variable-band-gap layers of minimal thickness, are established. Zh. Tekh. Fiz. 67, 50–56 (July 1997)     

Effect of Mg doping and substrate temperature on the properties of pulsed laser deposited epitaxial Zn1?xMgxO thin films

In this paper, we report on the pulsed laser deposition of epitaxial (0002) oriented Zn_1−x Mg _x O thin films onto (0001) sapphire substrate in O₂ ambient at different deposition temperatures. Pulsed laser deposited Zn_1−x Mg _x O films showed (0002) oriented hexagonal wurtzite structure up to 34% of Mg concentration. The bandgap of Zn_1−x Mg _x O thin films is successfully tuned from 3.3 to 4.2 eV by adjusting the Mg concentration x=0.0 to x=0.34. Pulsed laser deposited Zn_1−x Mg _x O thin films were characterized by XRD, AFM, SEM, PL and UV–VIS spectrometer. We have also studied the effect of deposition temperature on to the structure, surface morphology and optical properties of Zn_1−x Mg _x O thin films.     

Polariton reflectance spectra from thin ZnSxSe1−x layers

A study of reflectance spectra from thin ZnS_xSe_1−x solid-solution layers in the region of excitonic resonances is reported. It has been found that an increase in sulfur concentration in the layers increases the inhomogeneous broadening of the quantized polariton lines. It has been established that the inhomogeneous line broadening in a reflectance spectrum depends on the magnitude of exciton-photon mixing; it is small in the long-wavelength region where the photon component of the polariton is large, and large at short wavelengths where the mechanical component dominates. Fiz. Tverd. Tela (St. Petersburg) 40, 867–868 (May 1998)     

Selective infrared multiphoton dissociation of molecules in a pulsed gasdynamic flow of small extent

The isotopically selective IR multiphoton dissociation of molecules (here CF₃I) in a pulsed gasdynamic flow of small extent (the length of the flow in space is Δx _fl⩽1 cm) is investigated under conditions such that the entire flow is irradiated by high-intensity IR laser radiation. The use of a flow of small extent permits achieving high dissociation yields of resonantly excited molecules in the entire volume of the flow and thus to obtain a highly enriched residual gas in one radiation cycle. The method described gives a 400-fold enrichment of the residual gas in the isotope ¹³C when a pulsed molecular flow of CF₃I of natural isotopic composition is irradiated by just a single laser pulse. The dissociation yield in this case is practically unity, and the selectivity α⩾10. Zh. Tekh. Fiz. 69, 35–41 (January 1999)     

Exact Analytical Solution of the Schrödinger Equation for an N-Identical Body-Force System

A mathematical method is presented for solving the Schr?dinger equation for a system of identical body forces. The N-body forces are more easily introduced and treated within the hyperspherical harmonics. The problem of the N-body potential has been used at the level of both classical and quantum mechanics. The hypercentral interacting potential is assumed to depend on the hyperradius x = (ξ₁² + ξ₂² + ⋯ + ξ_N−1²)^1/2 only, where ξ₁,ξ₂,…,ξ_N−1 are Jacobi relative coordinates which are functions of N-particle relative positions r₁₂,r₂₃,…,r_N1. The problem of the harmonic oscillator and the Coulomb-type potential has been widely studied in different contexts. Using the N-body potential V(x) = ax² + bx − (c/x) as an example, and assuming an ansatz for the eigenfunction, an exact analytical solution of the Schr?dinger equation for an N-body system in three dimensions is obtained. This method is also applicable to some other types of potentials for N-identical interacting particles.     

Equidistant spectrum of localized states due to fluctuations of the parameters in quantum-well structures

Narrow equidistant peaks are recorded in the microphotoluminescence spectra of GaAs/Al_xGa_1−x As superlattices with thin barrier layers. An approximate method, consisting of the reduction of a three-dimensional problem to a one-dimensional problem, is developed for calculating the electronic spectrum of quantum dots of arbitrary shape. It is shown on the basis of this method that the observed peaks may be due to the formation of electronic states of a new type, which are produced as a result of the overlapping of fluctuations of the thicknesses of adjacent wells in structures with thin barriers. The equidistant spectrum of the new states is accounted for by the nearly quadratic dependence of the diameter of the overlap regions on the coordinate in the plane of the layers. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 4, 260–265 (25 February 1996)     

Hall effect in microscopically inhomogeneous magnetic alloys

A theory of the generalized conductivity for the normal component of the Hall effect is developed. It is shown that the normal Hall effect coefficient R ₀ of microscopically inhomogeneous magnetic alloys GdZn_xCu_1−x , which at low temperatures consist of ferro-, antiferro-, and paramagnetic phases, can be described satisfactorily on the basis of an effective-medium theory. The experimentally observed relationship between the coefficient R ₀(x) and the resistivity ρ(x) is obtained. Fiz. Tverd. Tela (St. Petersburg) 41, 98–102 (January 1999)     

Giant population inversion of hot electrons in GaAs/AlAs type heterostructures with quantum wells

The heating of electrons in an Al_xGa_1−x As/GaAs (x>0.42) heterostructure in a lateral (directed along the heterointerfaces) electric field is studied. Population inversion on the size-quantization subbands of the Γ valley of GaAs and a giant population inversion between the X-valley states of Al_xGa_1−x As and Γ-valley states of GaAs are predicted. The possibility of using these inversions for achieving stimulated IR emission is discussed. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 73–77 (10 July 1998)     

Carrier mobility in nonstoichiometric n-Bi2Te3−x Sex solid solutions

A study has been made of the thermoelectric and galvanomagnetic properties of n-Bi₂Te_3−x Se_x solid solutions (x=0.3 and 0.36) in the temperature range 80–300 K. The lowest carrier concentrations, (0.8–1)×10¹⁸ cm⁻³, were obtained by displacing the solid solution from the stoichiometric to a Te-rich composition. At such carrier concentrations, the second subband in the conduction band of n-Bi₂Te_3−x Se_x is not filled, which results in a growth of mobility because of the absence of interband scattering, and brings about an increase of thermoelectric efficiency in the 80–120-K range. Fiz. Tverd. Tela (St. Petersburg) 39, 483–487 (March 1997)     

Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells

The infrared radiation from hot holes in In_xGa_1−x As/GaAs heterostructures with strained quantum wells during lateral transport is investigated experimentally. It is found that the infrared radiation intensities are nonmonotonic functions of the electric field. This behavior is due to the escape of hot holes from quantum wells in the GaAs barrier layers. A new mechanism for producing a population inversion in these structures is proposed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 7, 478–482 (10 October 1996)     

Electron density distribution in BaPb<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>3</Subscript> superconducting oxides studied by double nuclear magnetic resonance methods

The effect of charge disorder on the formation of an inhomogeneous state of the electron system in the conduction band in BaPb_{1 − x} Sb _x O₃ superconducting oxides is investigated experimentally by NMR methods. The NMR spectra of ¹⁷O are measured systematically, and the contributions from ¹⁷O atoms with different cation nearest surroundings are identified. It is found that microscopic regions with an elevated spin density of charge carriers are formed within two coordination spheres near antimony ions. Nuclei of the superconducting phase of the oxide (regions with an elevated antimony concentration) microscopically distributed over the sample are detected in compounds with x = 0.25 and 0.33. Experiments in which a double resonance signal of the spin echo of ¹⁷O-²⁰⁷Pb and ¹⁷O-¹²¹Sb are measured in the metal phase of BaPb_{1 − x} Sb _x O₃ oxides are carried out for the first time. The constants of indirect heteronuclear spin-spin ¹⁷O-²⁰⁷Pb interaction are determined as functions of the local Knight shift ₂₀₇ Ks. The estimates of the constants of the indirect interaction between the nuclei of the nearest neighbors (O-Pb and Pb-Pb atoms) and analysis of evolution of the NMR spectra of ¹⁷O upon a change in the antimony concentration are convincing evidence in favor of the development of a microscopically inhomogeneous state of the electron system in the metal phase of BaPb_{1 − x} Sb _x O₃ oxides.     

Magnetoluminescence of Ge/Ge1−x Six heterostructures

This paper reports on the first investigation made of luminescence of Ge/Ge_1−x Si_x heterostructures at liquid-helium temperatures in a magnetic field of up to 14 T. The luminescence lines observed in the spectra are due to both free and impurity bound excitons in Ge layers. The diamagnetic shift of the quasi-two-dimensional exciton has been measured. From the experimental data the size of the exciton has been estimated to be 75–90 Å. Zh. éksp. Teor. Fiz. 114, 619–627 (August 1998)     

Electronic structure of Rh, Pt, In, and Sn in the mixed-valence systems Eu(Rh1−x Ptx)2 and U(In1−x Snx)3

The electronic structure of Rh, Pt, In, and Sn in the mixed-valence systems Eu(Rh_1−x Pt_x)₂ and U(In_1−x Sn_x)₃ has been studied by the x-ray K line-shift method. It has been found that the occupation of the Rh 4d-shell in Eu(Rh_1−x Pt_x)₂ is higher than that in the metal, and that it grows with decreasing Eu valence (i.e., with increasing 4f-shell occupation). The electronic structure of Pt, In, and Sn in Eu(Rh_1−x Pt_x)₂ and U(In_1−x Sn_x)₃ does not depend on the Eu and U valence and is practically the same as in the metals. These features in the electronic structure of Rh, Pt, In, and Sn in Eu(Rh_1−x Pt_x)₂ and U(In_1−x Sn_x)₃ suggest that the electron released in the f ⁿ → f ⁿ −1+e transitions, rather than transferring to the common conduction band, remains localized at the Eu and U atoms. Fiz. Tverd. Tela (St. Petersburg) 41, 1529–1531 (September 1999)     

Infrared lattice-reflection spectroscopy of Zn1−x CdxSe epitaxial layers grown on a GaAs substrate by molecular-beam epitaxy

Results are presented of the first measurements of infrared reflection spectra of Zn_1−x Cd_xSe films (x=0–0.55; 1) grown on a GaAs substrate by molecular-beam epitaxy. It is shown by a mathematical analysis of the experimental spectra that the investigated Zn_1−x Cd_xSe alloy system manifests a unimodal rearrangement of its vibrational spectrum as the composition is varied. Fiz. Tverd. Tela (St. Petersburg) 41, 982–985 (June 1999)