Improvement of total reflection X-ray fluorescence analysis of low Z elements on silicon wafer surfaces at the PTB monochromator beamline for undulator radiation at the electron storage ring BESSY II

Several different total reflection X-ray fluorescence (TXRF) experiments were conducted at the plane grating monochromator beamline for undulator radiation of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II, which provides photon energies between 0.1 and 1.9 keV for specimen excitation. The lower limits of detection of TXRF analysis were investigated for some low Z elements such as C, N, O, Al, Mg and Na in two different detection geometries for various excitation modes. Compared to ordinary XRF geometries involving large incident angles, the background contributions in TXRF are drastically reduced by the total reflection of the incident beam at the polished surface of a flat specimen carrier such as a silicon wafer. For the sake of an application-oriented TXRF approach, droplet samples on Si wafer surfaces were prepared by Wacker Siltronic and investigated in the TXRF irradiation chamber of the Atominstitut and the ultra-high vacuum TXRF irradiation chamber of the PTB. In the latter, thin C layer depositions on Si wafers were also studied.     

Possibilities and limitations of the total reflection X-ray fluorescence spectrometry for the determination of low Z elements in biological samples

The analytical capability of the laboratory scale vacuum total reflection X-ray fluorescence (TXRF) spectrometer (Wobistrax) was studied for the determination of the Z elements (Na, Mg, P, S, K and Ca) in different biological matrices represented by the following certified reference materials: MURST-ISS-A2 Antarctic krill, IAEA-331 spinach, NIST 1577a bovine liver, and SERONORM™ Trace Elements Serum Level 1.First, the stability of the response factors (relative sensitivity) against Ti internal standard was checked in the concentration range of 1 to 1000 mg/L in a diluted nitric acid matrix. It has been found that the upper limit of the analytical concentration range for K and Ca can be as high as 1000 mg/L; on the other hand, the remaining elements cannot be determined above a concentration of some tens mg/L.The established response factors were used for the elemental analysis of the four certified reference materials after normal-volume microwave assisted acid digestion. In the case of the serum sample, different preparation methods were compared as follow: direct analysis, microwave assisted acid digestion in normal-volume and micro-vessels, as well as the vapor-phase digestion directly on the TXRF carrier plates.On the basis of the results, the normal-volume digestion results in rather high dilution of the samples; thus, elements at low concentration could not be detected in some of the samples. On the other hand, this method offers the highest rate of both organic matrix decomposition and inorganic matrix dilution; thus, the background and the standard deviation of the results were the lowest. In general, this method was found to be useful for the analysis of samples with high dissolved (organic + inorganic) content if the analytes are present at a concentration considerable above the quantification limit.In the case of the microscale and the vapor-phase digestion, both the organic and inorganic matters remain at elevated concentration; thus, higher background and self-absorption of the fluorescent radiation occurred, deteriorating the analytical performance.     

Analysis of low Z elements on Si wafer surfaces with synchrotron radiation induced total reflection X-ray fluorescence at SSRL, Beamline 3-3: comparison of droplets with spin coated wafers

The unique properties of synchrotron radiation, such as high incident flux combined with low divergence, its linear polarization and energy tunability, make it an ideal excitation source for total reflection X-ray fluorescence (TXRF) spectroscopy in order to non-destructively detect trace impurities of transition metals on Si wafer surfaces. When used with a detector suitable for the determination of low energy radiation this technique can be extended to the detection of low-Z elements, such as Al, Na and Mg. Experiments have been performed at SSRL Beamline 3-3, a bending magnet beamline using monochromatic radiation from a double multilayer monochromator. The wafer was mounted vertically in front of the detector, which was aligned along the linear polarization vector of the incoming synchrotron radiation. This configuration allows the detector to accept a large solid angle as well as to take advantage of the reduced scattered X-ray intensity emitted in the direction of the linear polarization vector. A comparison between droplet samples and spin coated samples was done, in order to compare the capabilities of vapor phase decomposition (VPD-TXRF) with conventional SR-straight-TXRF. Detection limits in the range of 50 fg corresponding to 2E10 atoms/cm² have been obtained for Na. The spin coated samples, prepared from solutions containing an equal amount of Na, Mg and Al showed an unexpected result when performing a scan of the angle of incidence of the incoming X-rays suggesting a different adsorption behavior of the elements in a multielement solution on the wafer surface. The observation of this behavior is important because the spin coating technique is the standard method for the preparation of surface standards in semiconductor quality control. This effect could be characteristic of the Na, Mg, Al solution used, but the angle dependence of the fluorescence signal of a standard should always be investigated before using the standard for calibration of the apparatus and quantification.     

Construction of a windowless Si-anode X-ray tube for a more efficient excitation of low Z elements on Si-wafer surfaces in total reflection fluorescence analysis

To improve the achievable detection limits of low Z element with TXRF, a commercially available 2 kW X-ray tube (SEIFERT Type SF 60, Ahrensburg) with a 40 μm×8 mm fine focus has been modified. A windowless X-ray tube has been realized by removing the Be window out of the tube. The original Cu anode block has been changed to Al, because of sputtering reasons. A 4–6 μm thick pure silicon layer has been sputtered on the Al substrate. The geometry of the anode has been constructed in a specific way in order to optimize the photon flux of the X-ray beam concerning self-absorption and brilliance. Direct vacuum tight coupling to the measuring chamber and operation at 10⁻⁶ mbar vacuum was successfully shown. First measurements have been perfomed with a detector suitable for the detection of low energy photons in total reflection XRF geometry. Sodium has been analyzed on a Si-wafer surface and detection limits of 36 pg (corresponds to 3E9 atoms/cm²) have been achieved and are 10 times better than the detection limits for Na excited with a 1.3 kW Cr standard tube of 330 pg. With this developed X-ray tube the detection limits required by the Semiconductor industry for Si wafer surface contamination quality control are fulfilled.     

Quo Vadis total reflection X-ray fluorescence?

The multielement trace analytical method ‘total reflection X-ray fluorescence’ (TXRF) has become a successfully established method in the semiconductor industry, particularly, in the ultra trace element analysis of silicon wafer surfaces. TXRF applications can fulfill general industrial requirements on daily routine of monitoring wafer cleanliness up to 300 mm diameter under cleanroom conditions. Nowadays, TXRF and hyphenated TXRF methods such as ‘vapor phase decomposition (VPD)-TXRF’, i.e. TXRF with a preceding surface and acid digestion and preconcentration procedure, are automated routine techniques (‘wafer surface preparation system’, WSPS). A linear range from 10⁸ to 10¹⁴ [atoms/cm²] for some elements is regularly controlled. Instrument uptime is higher than 90%. The method is not tedious and can automatically be operated for 24 h/7 days. Elements such as S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Br, Sn, Sb, Ba and Pb are included in the software for standard peak search. The detection limits of recovered elements are between 1×10¹¹ and 1×10⁷ [atoms/cm²] depending upon X-ray excitation energy and the element of interest. For the determination of low Z elements, i.e. Na, Al and Mg, TXRF has also been extended but its implementation for routine analysis needs further research. At present, VPD-TXRF determination of light elements is viable in a range of 10⁹ [atoms/cm²]. Novel detectors such as silicon drift detectors (SDD) with an active area of 5 mm², 10 mm² or 20 mm², respectively, and multi-array detectors forming up to 70 mm² are commercially available. The first SDD with 100 mm² (!) area and integrated backside FET is working under laboratory conditions. Applications of and comparison with ICP-MS, HR-ICP-MS and SR-TXRF, an extension of TXRF capabilities with an extremely powerful energy source, are also reported.     

Determination of low atomic number elements at trace levels in uranium matrix using vacuum chamber total reflection X-ray fluorescence

Determinations of low atomic number elements Na, Mg and Al present at trace concentrations in uranium matrix were made by vacuum chamber total reflection X-ray fluorescence spectrometer for the first time. For this purpose, synthetic samples of uranium with known amounts of these low atomic number elements were prepared by mixing different volumes of their solutions with U solution of high purity. The concentrations of these elements in the samples were in the range of 100–300 μg/g with respect to uranium and 10–20 μg/mL in the solutions. Major matrix uranium was separated by solvent extraction with 30% solution of tri-n-butyl phosphate in dodecane. After the solvent extraction, aqueous phase containing trace elements was mixed with Sc internal standard and the samples were analyzed by vacuum chamber total reflection X-ray fluorescence spectrometer having a Cr Kα excitation source. The total reflection X-ray fluorescence results obtained, after blank corrections, indicated an average deviation of 14% from the calculated concentrations of these low atomic number elements on the basis of their preparation. However, the total reflection X-ray fluorescence determined concentration of Mg was exceptionally lower than the calculated concentration in two samples. These studies have shown that vacuum chamber total reflection X-ray fluorescence is a promising technique for the determination of low atomic number elements in uranium matrix after its separation.     

Analysis of mineral water from Brazil using total reflection X-ray fluorescence by synchrotron radiation

The total reflection X-ray fluorescence using synchrotron radiation (SRTXRF) has become a competitive technique for the determination of trace elements in samples that the concentrations are lower than 100 ng ml⁻¹. In this work, thirty-seven mineral waters commonly available in supermarkets of Rio de Janeiro, Brazil, were analyzed by SRTXRF. The measurements were performed at the X-Ray Fluorescence Beamline at Brazilian National Synchrotron Light Laboratory (LNLS), in Campinas, São Paulo, using a polychromatic beam with maximum energy of 20 keV for the excitation. Standard solutions with gallium as internal standard were prepared for calibration of the system. Mineral water samples of 10 μl were added to Perspex sample carrier, dried under infrared lamp and analyzed for 200 s measuring time. It was possible to determine the concentrations of the following elements: Si, S, K, Ca, Ti, Cr, Mn, Ni, Cu, Zn, Ge, Rb, Sr, Ba and Pb. The elemental concentration values were compared with the limits established by the Brazilian legislation.     

Analysis of nutrition-relevant trace elements in human blood and serum by means of total reflection X-ray fluorescence (TXRF) spectroscopy

In clinical service laboratories, one of the most common analytical tasks with regard to inorganic traces is the determination of the nutrition-relevant elements Fe, Cu, Zn, and Se.     

Method and mechanism of vapor phase treatment–total reflection X-ray fluorescence for trace element analysis on silicon wafer surface

Vapor phase treatment (VPT) is a pretreatment with hydrofluoric acid vapor to raise the sensitivity of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis on silicon wafers. The International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) has been investigating the method to analyze 10⁹ atoms/cm² level of metallic contamination on the silicon wafer surface. Though VPT can enhance the TXRF signal intensity from the metallic contamination, it has turned out that the magnitude of the enhancement varies with the type of methods and the process conditions. In this study, approaches to increase TXRF intensity by VPT are investigated using a fuming chamber in an automated VPD instrument. Higher signal intensity can be obtained when condensation is formed on the sample surface in a humidifying atmosphere and with a decreasing stage temperature. Surface observations with SEM and AFM show that particles with ~ 4 μm in diameter are formed and unexpectedly they are dented from the top surface level.     

Analysis of low Z elements in various environmental samples with total reflection X-ray fluorescence (TXRF) spectrometry

Recently there is a growing interest in low Z elements such as carbon, oxygen up to sulphur and phosphorus in biological specimen. Total reflection X-ray fluorescence (TXRF) spectrometry is a suitable technique demanding only very small amounts of sample. On the other side, the detection of low Z elements is a critical point of this analytical technique. Besides other effects, self absorption may occur in the samples, because of the low energy of the fluorescence radiation. The calibration curves might be not linear any longer. To investigate this issue water samples and samples from human cerebrospinal fluid were used to examine absorption effects. The linearity of calibration curves in dependence of sample mass was investigated to verify the validity of the thin film approximation. The special requirements to the experimental setup for low Z energy dispersive fluorescence analysis were met by using the Atominstitute's TXRF vacuum chamber. This spectrometer is equipped with a Cr-anode X-ray tube, a multilayer monochromator and a SiLi detector with 30 mm² active area and with an ultrathin entrance window. Other object on this study are biofilms, living on all subaqueous surfaces, consisting of bacteria, algae and fungi embedded in their extracellular polymeric substances (EPS). Many trace elements from the water are bound in the biofilm. Thus, the biofilm is a useful indicator for polluting elements. For biomonitoring purposes not only the polluting elements but also the formation and growth rate of the biofilm are important. Biofilms were directly grown on TXRF reflectors. Their major elements and C-masses correlated to the cultivation time were investigated. These measured masses were related to the area seen by the detector, which was experimentally determined. Homogeneity of the biofilms was checked by measuring various sample positions on the reflectors.     

Matrix effect on the detection limit and accuracy in total reflection X-ray fluorescence analysis of trace elements in environmental and biological samples

The effect of matrix contents on the detection limit of total reflection X-ray fluorescence analysis was experimentally investigated using a set of multielement standard solutions (500 ng/mL of each element) in variable concentrations of NH₄NO₃. It was found that high matrix concentration, i.e. 0.1–10% NH₄NO₃, had a strong effect on the detection limits for all investigated elements, whereas no effect was observed at lower matrix concentration, i.e. 0–0.1% NH₄NO₃.     

Summary of ISO/TC 201 Standard: XIX ISO 17331:2004—Surface chemical analysis—Chemical methods for the collection of elements from the surface of silicon‐wafer working reference materials and their determination by total‐reflection x‐ray fluorescence (TXRF) spectroscopy

This international standard specifies chemical methods for the collection of iron and/or nickel from the surface of silicon‐wafer working reference materials by the vapour‐phase decomposition method or the direct acid droplet decomposition method. The determination of the elements collected may be carried out by total‐reflection x‐ray fluorescence spectroscopy, as well as by graphite‐furnace atomic absorption spectroscopy or inductively coupled plasma mass spectroscopy. This international standard applies to iron and/or nickel atomic surface densities from 6 × 10⁹ to 5 × 10¹¹ atoms cm^?2. Copyright © 2005 John Wiley & Sons, Ltd.