溅射功率对直流磁控溅射Ti膜结构的影响

 采用直流磁控溅射方法制备了纯Ti膜,研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构,并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加,当溅射功率为20 W时,原子力显微镜(AFM)图像显示Ti膜光洁、致密,均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型,Ti膜应力先随溅射功率增大而增大,在60 W时达到最大值（为945.1 MPa）,之后随溅射功率的增大有所减小。     

溅射功率对直流磁控溅射Ti膜结构的影响

采用直流磁控溅射方法制备了纯Ti膜,研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构,并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加,当溅射功率为20 W时,原子力显微镜(AFM)图像显示Ti膜光洁、致密,均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型,Ti膜应力先随溅射功率增大而增大,在60 W时达到最大值（为945.1 MPa）,之后随溅射功率的增大有所减小。     

新型的覆纳米粒子薄膜阴极的研究

采用直流磁控溅射的方法制备出Ir金属纳米粒子薄膜.利用扫描电子显微镜分析了纳米粒子的形态和分布以及不同工艺条件对粒子粒径及形貌的影响,表明纳米粒子的大小可通过调节溅射气体压强来控制.在25%孔度的W海绵基体内浸入6∶1∶2铝酸盐发射物质,然后在其表面沉积上厚度为200—500 nm的纳米粒子薄膜层,最后在H₂气中1200℃烧结,即制成了新型纳米粒子薄膜阴极.利用阴极发射微观均匀性测试仪对纳米粒子薄膜阴极和传统覆膜阴极的热电子发射的均匀性进行了对比研究.采用飞行时间质谱仪测试了真空本底、纳米粒子薄膜阴极、传统覆膜阴极等各种阴极蒸发物的成分,研究了阴极蒸发速率与阴极温度的关系,比较了不同阴极蒸发速率的大小.研究了Ba-W阴极覆上纳米粒子薄膜后的发射特性. 关键词： 纳米粒子薄膜 热阴极 发射均匀性 蒸发     

Effect of deposition power and pressure on rate deposition and resistivity of titanium thin films grown by DC magnetron sputtering

ABSTRACT

Based on magnetron sputtering deposition technology, titanium (Ti) thin films are deposited on silicon (Si) substrate using different preparation conditions such as sputtering power and pressure. The influence of altering these conditions on deposition rate and microstructure is studied. The results show that sputtering power significantly affects the rate of deposition and the resistivity. The deposition rate of the Ti thin film increases when the resistivity decreases under sputtering powers of 150–225?W with a pressure of 0.8?Pa and Argon (Ar) flux of 80 sccm. As sputtering power was increased further (from 225 to 250?W), the deposition rate reduced and the resistivity augmented. Pressure also has influence on the deposition rate and resistivity – when pressure increases from 0.6 to 0.8?Pa, the deposition rate escalates while the resistivity reduces; when the pressure is raised from 0.8 to 1.0?Pa with Ar flux of 100 sccm, the deposition rate decreases and resistivity increases. The surface chemical compositions and the structures of the Ti film were studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD). Observing the cross-section of the thin-film samples produced by scanning electron microscope (SEM) reveals the influence of the preparation conditions used on the microstructure and confirms the influence of sputtering power and pressure on the resistivity.     

Development of protective metal coatings on aluminum by magnetron sputtering

Depositions of copper and titanium coatings on aluminum foils and polished aluminum plates for thier protection against corrosion in alkaline media were performed. The coatings were deposited in three different types of magnetron sputtering systems: a direct current (DC) magnetron discharge, a high current impulse magnetron discharge, and a DC magnetron discharge with melted cathode. Only aluminum foils coated with copper films obtained by combined ion-plasma technology, which included preliminarily sputtering of the aluminum surface with an ion beam, deposition of a dense interlayer in the DC magnetron discharge with ion assistance of initial stage of deposition, and deposition of additional layer in the magnetron discharge with melted cathode, were resistant against 30 wt % NaOH solution.     

膜厚对直流磁控溅射Nb薄膜微结构的影响

采用直流磁控溅射方法制备膜厚为50, 100, 200, 400, 600 nm的Nb薄膜,对薄膜的沉积速率、表面形貌、晶体结构进行了研究,并对其应力和择优取向进行了详细的分析。原子力显微镜图像显示Nb膜表面光滑、致密,均方根粗糙度达到0.1 nm量级。X射线小角衍射给出了薄膜的晶格结构、晶粒尺寸和应力情况。分析表明薄膜为多晶体心立方结构(bcc),在(110)晶面方向存在明显的择优取向,且随着薄膜厚度增大而增强。Nb膜应力先随薄膜厚度增大而增大,在200 nm时达到最大值(为1.015 1 GPa),后随薄膜厚度的增大有所减小。     

Transparence and electrical properties of ZnO-based multilayer electrode

Three-layered ZnO/Ag–Ti/ZnO structures were prepared using both the sol-gel technique and DC magnetron sputtering. This study focuses on the electrical and optical properties of the ZnO/Ag–Ti/ZnO multilayers with various thicknesses of the Ag–Ti layer. The ZnO thin film prepared by the sol–gel method was dried at 300°C for 3 minutes, and a fixed thickness of 20 nm was obtained. The thickness of the Ag–Ti thin film was controlled by varying the sputtering time. The Ag–Ti layer substantially reduced the electrical resistivity of the sol–gel-sprayed ZnO thin films. The sheet resistance of the Ag–Ti layer decreased dramatically and then became steady beyond a sputtering time of 60 s. The sputtering time of Ag–Ti thin film deposition was determined to be 60 s, taking into account the optical transmittance. Consequently, the transmittance of the ZnO/Ag–Ti/ZnO multilayer films was 71% at 550 nm and 60% at 350 nm. The sheet resistance was 4.2 Ω/sq.     

Optimization of plasma parameters for high rate deposition of titanium nitride films as protective coating on bell-metal by reactive sputtering in cylindrical magnetron device

Nano-structured titanium nitride (TiN) thin film coating is deposited by reactive sputtering in cylindrical magnetron device in argon and nitrogen gas mixtures at low temperature. This method of deposition using DC cylindrical magnetron configuration provides high uniform yield of film coating over large substrate area of different shapes desirous for various technological applications. The influence of nitrogen gas on the properties of TiN thin film as suitable surface protective coating on bell-metal has been studied. Structural morphological study of the deposited thin film carried out by employing X-ray diffraction exhibits a strong (2 0 0) lattice texture corresponding to TiN in single phase. The surface morphology of the film coating is studied using scanning electron microscope and atomic force microscope techniques. The optimized condition for the deposition of good quality TiN film coating is found to be at Ar:N₂ gas partial pressure ratio of 1:1. This coating of TiN serves a dual purpose of providing an anti-corrosive and hard protective layer over the bell-metal surface which is used for various commercial applications. The TiN film's radiant golden colour at proper deposition condition makes it a very suitable candidate for decorative applications.     

Pulsed magnetron sputtering and ion-induced annealing of carbon films

Thin carbon films are deposited on a silicon substrate at room temperatures via the biased pulsed magnetron sputtering of graphite in the physical (Ar, Kr, Xe) and reactive (Ar: CH4) modes at a different sputtering power density varying from 40 to 550 W/cm². To ensure ion-assistance, negative bias of the substrate is set during film deposition by means of both DC and pulsed power sources. Some deposition parameters lead to a high hardness of the films (12.5 GPa), optical transparency, a surface resistance of RS > 10⁹ Ω/h, and developed nanomorphology of the sample surface which bears visible inclusions with a lateral size of 35 nm. Some of the films are annealed after deposition with a C⁺-ion beam with an energy of 20 keV. A correlation between the parameters of magnetron deposition and ion-beam modification and the examined characteristics of the films is found. Different R _S values in a wide range can be achieved by means of simple adjustment of the parameters and modes during magnetron sputtering and ion-beam modification.     

溅射功率对Mo薄膜微结构和性能的影响

 实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

23.4nm软X射线多层膜反射镜研制

为了满足类氖-锗X射线激光研究的需要,设计制备了23.4 nm软X射线多层膜反射镜.依据多层膜选材原则并考虑材料的物理化学特性选择新的材料Ti与Si组成材料对.设计优化材料多层膜的周期厚度(d),材料比例(Γ),周期数(N),计算出Ti/Si反射率曲线.通过实验优化各种镀膜工艺参数,制备出了23.4 nm的Ti/Si多...     

Characterization of the ion cathode fall region in relation to the growth rate in plasma sputter deposition

In plasma-assisted magnetron sputtering, the ion cathode fall region is the part of the plasma where the DC electric field and ion current evolve from zero to their maximum values at the cathode. These quantities are straightforwardly related to the deposition rate of the sputtered material. In this work we derive simple relations for the measurable axially averaged values of the ion density and the ion current at the ion cathode fall region and relate them with the deposition rate. These relations have been tested experimentally in the case of an argon plasma in a magnetron sputtering system devoted to depositing amorphous silicon. Using a movable Langmuir probe, the profiles of the plasma potential and ion density were measured along an axis perpendicularly to the cathode and in front of the so-called race-track. The deposition rate of silicon, under different conditions of pressure and input power, has been found to compare well with those determined with the relations derived.     

Computer simulation of gas rarefaction effects and film deposition characteristics in a magnetron sputtering apparatus

Ar gas is known to be rarefied in front of a magnetron sputtering cathode due to the collisional heating by energetic sputtered atoms. The effects of the Ar rarefaction in a magnetron sputtering apparatus used for Ti-film deposition were investigated using the direct simulation Monte Carlo (DSMC) method which is capable of taking gas rarefaction effects into account. The calculated film deposition rate on a substrate and the film coverage in a small hole were larger than those calculated by the conventional simulation where the gas rarefaction is not included. This shows that the gas rarefaction improves both the film deposition rate and the film coverage.     

Ti/Ti-类金刚石多层膜的制备与表征

采用电子回旋共振-化学气相沉积结合中频磁控溅射的真空镀膜技术, 以99.99%Ti为靶材, 乙炔为碳源制备了Ti/Ti-类金刚石(DLC)多层膜. 利用X射线衍射仪、扫描电子显微镜、X射线光电子能谱仪 对Ti/Ti-DLC多层膜进行了相结构、组织、成分及形态分析. 采用显微硬度仪、摩擦磨损仪、表面粗糙度仪对Ti/Ti-DLC多层膜进行了力学性能考察. 结果表明: Ti/Ti-DLC多层膜中主要含有TiC晶相; Ti层和Ti-DLC层中未出现柱状晶体生长模式, 分层中均以岛状模式生长; 当调制周期Λ≤ 50 nm时, 分层结构变模糊; 调制周期Λ对Ti/Ti-DLC多层膜的复合硬度、摩擦系数、表面形貌、表面粗糙度都有影响, 当调制周期Λ较小时表现出纳米增硬效应, 表面出现大颗粒, 表面粗糙度和摩擦系数均变大.     

Two-step sputtered ZnO piezoelectric films for film bulk acoustic resonators

This study investigates high-performance ZnO piezoelectric films used for thin film bulk acoustic resonators (TFBAR). The ZnO piezoelectric film was deposited on a Pt/Ti electrode using an RF magnetron sputter by a two-step method at room temperature. The Pt/Ti electrode was deposited by a DC sputtering system, on which, ZnO piezoelectric films were deposited in one step and in two steps to minimize roughness in the first step and produce the preferred orientation in the second. Both field-emission scanning electron microscopy (FESEM) and atom force microscopy (AFM) revealed that ZnO piezoelectric film deposited by two-step sputtering exhibited favorable characteristics, such as a rigidly precise surface structure with surface roughness of 7.37 nm, even better than in one-step sputtering. Examining the ZnO thin film by X-ray diffraction (XRD) showed a much higher c-axis-preferring orientation than in one-step sputtering. The reflection coefficient of the resonator device was measured using an HP8720 network analyzer. The frequency response of the FBAR device exhibited a return loss of -25 dB at a resonant frequency of 2212 MHz with a high coupling coefficient of 6.7%. PACS 68.55.Jk; 43.35.Ns; 81.15.-z     

负偏压对磁控溅射Ti膜沉积速率和表面形貌的影响

采用直流磁控溅射加负偏压的方法制备了Ti膜,研究了不同偏压条件对Ti膜沉积速率、密度、生长方式及表面形貌的影响。随着偏压逐渐增大,Ti膜沉积速率分三个阶段变化:0~ -40 V之间沉积速率基本不变; -40~ -80 V之间沉积速率迅速降低;超过-80 V后沉积速率随偏压的下降速度又放缓。Ti膜密度随偏压增加而增大,负偏压为-119.1 V时开始饱和并趋于块体Ti材密度。加负偏压能够抑制Ti膜的柱状生长方式;偏压可以改善Ti膜的表面形貌,对于40 W和100 W的溅射功率,负偏压分别在-100 V和-80 V左右时制备出表面光洁性能较佳的Ti膜。     

磁控溅射制备Ni/Ti多层膜表面粗糙度

采用磁控溅射方法制备了周期数分别为10,30,50和75的Ni/Ti多层膜,利用X射线掠入射反射测量了多层膜表面和界面的状态,并用原子力显微镜测量了多层膜的表面粗糙度,研究了不同周期数的Ni/Ti多层膜表面粗糙度的变化规律。结果表明：Ni/Ti多层膜表面粗糙度随着膜层数增加而增加,当Ni/Ti多层膜的周期数从10变化到75时,其表面粗糙度由0.80 nm增大到1.69 nm。实验数据拟合表明：Ni/Ti多层膜表面粗糙度与周期数成3次方关系;但在周期数较小时,粗糙度与周期数成线性关系。     

磁控溅射制备Ni/Ti多层膜表面粗糙度

采用磁控溅射方法制备了周期数分别为10,30,50和75的Ni/Ti多层膜,利用X射线掠入射反射测量了多层膜表面和界面的状态,并用原子力显微镜测量了多层膜的表面粗糙度,研究了不同周期数的Ni/Ti多层膜表面粗糙度的变化规律。结果表明:Ni/Ti多层膜表面粗糙度随着膜层数增加而增加,当Ni/Ti多层膜的周期数从10变化到75时,其表面粗糙度由0.80 nm增大到1.69 nm。实验数据拟合表明:Ni/Ti多层膜表面粗糙度与周期数成3次方关系;但在周期数较小时,粗糙度与周期数成线性关系。     

GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文)

通过直流磁控反应溅射制备了氮化铝(AlN)薄膜,研究了沉积条件与氮化镓(GaN)缓冲层对薄膜质量的影响。利用X-射线衍射仪(XRD)和扫描电镜(SEM)表征了AlN薄膜的晶体结构和表面形貌。XRD研究结果表明,低工作压强、短靶距和适当的氮气偏压有利于(002)择优取向的AlN薄膜沉积。随着沉积时间的增加,沉积在50 nm厚的GaN缓冲层上的AlN薄膜的(002)面的衍射峰的半高宽急剧减小,而沉积在1μm厚的GaN薄膜上的AlN薄膜的(002)面的衍射峰的半高宽几乎不变。SEM测试结果表明:在沉积的初期,沉积在1μm厚的GaN薄膜上的AlN薄膜的(002)面的晶粒大小分布比沉积在50 nm厚的GaN缓冲层上的AlN薄膜的均匀,而随着沉积时间的增加,它们的晶粒大小分布几乎趋向一致。     

溅射功率对Mo薄膜微结构和性能的影响

实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。