离子束混合,掺杂硅化物及快速热处理在硅化物自对准工艺中的应用

文中提出了一种应用于ＣＭＯＳ电路的硅化物工艺。该工艺中硅化物的形成运用了离子束混合技术，掺杂硅化物结合ＲＴＡ推结实现硅化物浅结。并且也研究了与该工艺相关的一些主要问题。特别是：（１）离子束混合及ＲＴＡ对Ｔｉ硅化物的特性及Ｔｉ／ＳｉＯ２间的相互作用的影响；（２）自对准ＴｉＮｘＯｙ／ＴｉＳｉ２形成及相态转变；（３）ＲＴＡ推结时杂质再分布、分凝和结形成的机理；（４）硅化物器件特性及可靠性，结果表明，该工     

模拟/数字混合信号电路技术发展动态

叙述了国内外模拟和数字混合信号电路发展现状,重点讨论了国内外高性能模拟、射频电路、DSP、A/D转换器和SOC等器件研发和应用的一些情况,指出了这些器件在数模混合信号电路技术发展进程中的作用.     

基于0.6μm CMOS工艺应用在高速ADC工作频率300MHz的高速电压比较器设计

高速比较器是高速模数转换电路的关键环节.本文综合考虑了比较器的传输延时、失调电压等因素,分析了前置放大器和比较锁存电路的结构,在此基础上设计了一个基于CSMC 0.6 μm CMOS工艺、适合于高速ADC的高速电压比较器.仿真结果表明:比较器工作频率为300 MHz以上,工作电流约为3.3 mA,上升延时为993 ps,下降延时为932 ps,失调电压约为7.46 mV.该比较器可以在高速模数转换电路中应用.     

DAB接收机中的低相位噪声低功耗高速数模混合下分频模块

本文实现了一种用于DAB数字广播调谐器的具有低相位噪声与低功耗的高速数模混编下分频模块。在设计中采用了若干项新的电路技术以提升电路的性能。采用了具有改进型源极耦合逻辑D触发器的同步分频器与具有改进型CMOS主从触发器的异步分频器实现了具有低相位噪声的双模分频器。在吞吐式计数器的设计中采用了一种更为精确的线负载模型。电路采用0.18-?m CMOS工艺实现。芯片面积为0.6mm?0.2mm。下分频模块中的双模分频器的输出信号在距载波中心频率10kHz频偏处的相位噪声仅为-118.2dBc/Hz。下分频模块的核心部分在1.8V供电电源下的功耗仅为2.7mW。     

A CMOS Analog Cell and its applications in analog signal processing

This paper presents a core cell that can be reconfigured and combined with current mirrors to implement exponential, logarithmic, multiplier, divider and raise-to-power function circuits. The proposed circuit uses CMOS transistors operating in the strong inversion. The proposed circuits has been verified with the 0.8?µm CMOS technology by HSPICE simulations. The simulations results confirm the functionality of the proposed circuits. The proposed circuits paves the way for designing analog signal processors.     

A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

A MOS-NDR (negative differential resistance) transistor which is composed of four n-channel metaloxide-semiconductor field effect transistors (nMOSFETs) is fabricated in standard 0.35 μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD (resonant tunneling diode) in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal.Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOSNDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.     

基于标准CMOS工艺制作的MOS-NDR柔性逻辑电路

本文利用0.35um标准CMOS工艺实现了一种由4个nMOSFET构成的MOS型负阻器件。这种负阻器件的I-V特性与传统的化合物材料构成的共振隧穿二极管（RTD）的特性类似,而且可以通过第三端来调制其I-V特性。基于这种MOS型负阻器件,本文实现了一种通过调节阈值电压来实现与非门（NAND）到或非门（NOR）转变的柔性逻辑电路。此种电路所用器件较少,而且由于使用标准IC的设计和工艺流程,制作工艺大大简化。     

A novel high-speed CMOS circuit based on a gang of capacitors

There is no doubt that complementary metal-oxide semiconductor (CMOS) circuits with wide fan-in suffers from the relatively sluggish operation. In this paper, a circuit that contains a gang of capacitors sharing their charge with each other is proposed as an alternative to long N-channel MOS and P-channel MOS stacks. The proposed scheme is investigated quantitatively and verified by simulation using the 45-nm CMOS technology with V_DD = 1 V. The time delay, area and power consumption of the proposed scheme are investigated and compared with the conventional static CMOS logic circuit. It is verified that the proposed scheme achieves 52% saving in the average propagation delay for eight inputs and that it has a smaller area compared to the conventional CMOS logic when the number of inputs exceeds three and a smaller power consumption for a number of inputs exceeding two. The impacts of process variations, component mismatches and technology scaling on the proposed scheme are also investigated.     

A self-controllable voltage level (SVL) circuit and its low-power high-speed CMOS circuit applications

A self-controllable voltage level (SVL) circuit which can supply a maximum dc voltage to an active-load circuit on request or can decrease the dc voltage supplied to a load circuit in standby mode was developed. This SVL circuit can drastically reduce standby leakage power of CMOS logic circuits with minimal overheads in terms of chip area and speed. Furthermore, it can also be applied to memories and registers, because such circuits fitted with SVL circuits can retain data even in the standby mode. The standby power of an 8-bit 0.13-/spl mu/m CMOS ripple carry adder (RCA) with an on-chip SVL circuit is 8.2 nW, namely, 4.0% of that of an equivalent conventional adder, while the output signal delay is 786 ps, namely, only 2.3% longer than that of the equivalent conventional adder. Moreover, the standby power of a 512-bit memory cell array incorporating an SVL circuit for a 0.13-/spl mu/m 512-bit SRAM is 69.1 nW, which is 3.9% of that of an equivalent conventional memory-cell array. The read-access time of this 0.13-/spl mu/m SRAM is 285 ps, that is, only 2 ps slower than that of the equivalent SRAM.     

Impact of technology scaling and process variations on RF CMOS devices

Inspired by the huge improvement in the RF properties of CMOS devices, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Moreover, the RF frequency performance of CMOS is investigated under the influence of process variations for different CMOS generations. Using the BSIM4 model, it is found that future CMOS technologies have high prospects in the RF industry and will continue challenging other technologies in the RF domain to be the dominant technology for RF transceivers and system-on-chip implementations.     

Design and implementation of a reconfigurable mixed-signal SoC based on field programmable analog arrays

This work presents a reconfigurable mixed-signal system-on-chip (SoC), which integrates switched-capacitor-based field programmable analog arrays (FPAA), analog-to-digital converter (ADC), digital-to-analog converter, digital down converter, digital up converter, 32-bit reduced instruction-set computer central processing unit (CPU) and other digital IPs on a single chip with 0.18 μm CMOS technology. The FPAA intellectual property could be reconfigured as different function circuits, such as gain amplifier, divider, sine generator, and so on. This single-chip integrated mixed-signal system is a complete modern signal processing system, occupying a die area of 7×8 mm² and consuming 719 mW with a clock frequency of 150 MHz for CPU and 200 MHz for ADC/DAC. This SoC chip can help customers to shorten design cycles, save board area, reduce the system power consumption and depress the system integration risk, which would afford a big prospect of application for wireless communication.     

CMOS current-controlled current differencing transconductance amplifier and applications to analog signal processing

This article presents design of a basic current-mode building block for analog signal processing, named as current-controlled current differencing transconductance amplifier (CCCDTA). Its parasitic resistances at two current input ports can be controlled by an input bias current. Owing to working in current-mode of all terminals, it is very suitable to use in a current-mode signal processing, which is continually more popular than a voltage one. The proposed element is realized in a CMOS technology and is examined the performance through PSPICE simulations. They display usability of the new active element, where the maximum bandwidth is 311 MHz. The CMOS CCCDTA performs low power consumption and tuning over a wide current range. In addition, some examples as a current-mode universal biquad filter, floating inductance simulator and quadrature oscillator are included. They occupy only single CCCDTA.     

PMOS-switching dual-path charge pump in standard twin-well CMOS technology

In this article a new charge pump circuit is presented, which is feasible for implementation with the standard twin-well CMOS process. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned ON during each half of the clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. Test chips have been fabricated in a 0.35-μm twin-well CMOS process. The output voltage of a 4-stage charge pump with each pumping capacitor of 7.36 pF measures 6.7 V under a 1.5 V power supply and 20 MHz clock frequency. It can supply a maximum load current of about 180 μA. Although the proposed circuit exhibits somewhat inferior performances against triple-well charge pumps using additional mask and process steps, it shows at least 60% higher voltage gain at V _DD = 0.9 V, approximately 10% higher peak power efficiency at V _DD = 1.5 V, much larger output current drivability and faster initial output rising than traditional twin-well charge pumps. This new pumping efficient circuit is suitable for design applications with a low-cost standard twin-well CMOS process.