Ca和Sr原子n′dnl自电离态在低电场中的线性Stark效应

用激光多步激发技术观察了Ca和Sr原子n′dnl双电子激发自电离态的电场效应。Stark光谱显示,在F<1/3n⁵的低电场中,Stark能级分裂与外电场强度线性相关。也观察了近简并l亚能级的Stark混合使自电离共振谱线在外电场中的增宽。这一效应在高温等离子体中对双电子复合速率的增加起重要作用。 关键词：     

Electric-field-induced energy spectra and dispersions of ZnO/MgxZn1−xO MQWs

The energy spectra and dispersion relations of carriers in the presence of an electric field applied along the growth direction in ZnO/Mg_xZn_1−xO multiple quantum wells (MQW) are calculated using the asymptotic transfer method (ATM) on the basis of the quasistationary state approximation. The energy spectra of the carriers induce some quasi-bound levels under electric fields. The dispersion relations for the energy of the ground state and lower excitation states still have parabolic shapes for both the electrons and the heavy holes in the presence of a moderate electric field. Our results also reveal that the number of energy levels increases with increasing number of ZnO quantum wells and that the energies increase with both increasing Mg composition x and electric field strength.     

Charge transfer between ZnO crystals and dye layers

The interaction between crystal and adsorbed dye molecules has been studied under well defined conditions by measurements of field effect and spectrally sensitized photoconductivity. The (101&#x0304;0) surfaces of n-type ZnO crystals (band gap 3.3 eV) are cleaned in ultrahigh vacuum. A pretreatment with atomic hydrogen produces an accumulation layer. Merocyanine (polymethine) dye molecules are deposited by sublimation in the same vacuum (coverage (1–2000) × 10¹⁴ cm^?2. Optical excitation of the dye causes a sensitized photoconductivity in the ZnO crystal close to the surface. The spectra distribution resembles the absorption spectrum of the dye with a maximum at 2.3 eV. An electric field applied perpendicular to the dye covered surface induces charge carriers in the crystal and changes the surface conductivity (field effect). Additional excitation of the dye by light causes a slow relaxation of the field-induced change of surface conductivity. This relaxation is observed for both signs of the field. Furthermore a memory of the dye covered crystals has been found. It can be programmed by field and light, read out via the surface conductivity and quenched by light. A phenomenological model for relaxation and memory is refined by kinetic equations and by considerations about charge transport within the dye layer. The observations can only be explained by a charge transfer between crystal and dye operating in both directions. From these results the following conclusion is drawn for the mechanism of spectrally sensitized photoconductivity of the present system: An electron transfer between dye molecules and crystal represents the decisive step rather than an energy transfer.     

Electro-optical effects at the discrete and continuum exciton states in GaAs

We report electroreflectance spectra from a GaAs-Au Schottky barrier interface, in the region of the fundamental energy gap, at a temperature of ～ 1.8 K. Both the ground exciton level and the continuum of states are investigated separately, by operating in the small modulation and in the on-off field limit, respectively. The field profile is monitored by I–V, C-V, and photovoltage measurements. It is found that, even at ～ 1.8K, a high surface field is generally present. This moves the actual reflecting boundary of the exciton-polariton away from the surface and affects the ER lineshape through field-induced inhomogeneity effects and interference across the high field layer below the surface. The spectra corresponding to the states of the continuum are discussed in terms of the recent calculations of photon-assisted tunneling with coulomb interaction.     

Effects of electron drag of gold in pores of anodic aluminum oxide: Reversible resistive switching in a chain of point contacts

The current–voltage characteristics of Au/AAO(Au)/probe structures based on anodic aluminum oxide with pores incompletely filled with gold have been studied. It has been found that an electric field initiates the mass transfer of a rear Au electrode and the subsequent growth of the metal in unfilled parts of pores of the oxide matrix in the form of chains of gold islands. It has been established that this transfer, which appears at a positive potential of the probe, is due primarily to the effect of electron drag of the metal (Au). Estimates have been obtained for the effective radius of Au islands (2 nm), the width of a gap between islands (0.5 nm), the height of potential barriers (100 meV), and the characteristic resistance of tunnel junctions (30 kΩ ~ h/e²), which is typical of point quantum contacts. The structures demonstrate reversible resistive switching between low- (~1 MΩ) and high-resistance (>100 GΩ) states.     

DFT study on the influence of electric field on surface‐enhanced Raman scattering from pyridine–metal complex

The influence of a static external electric field on surface‐enhanced Raman scattering is investigated by calculating the Raman spectra and excited state properties of pyridine–Au₂₀ complex with the density functional theory and time‐dependent density functional theory method. The external electric field with orientation parallel (positive) or antiparallel (negative) to the permanent dipole moment is respectively applied on the complex. This field slightly changes the equilibrium geometry and polarizabilities, which results in shifted vibration frequencies and selectively enhanced Raman intensities. The changes of charge transfer (CT) excited states in response to the electric field are visualized by employing the charge difference densities. Further, the energy of charge transfer transition is tuned by electric field to be resonant or not with the incident light, leading to the Raman intensities are enhanced or not enhanced. At the same time, the intensities of vibration modes are sensitive to the orientation of the field. The positive electric field enhances the totally symmetric ring breathing mode (~1009 cm⁻¹) but suppresses the trigonal ring breathing mode (~1051 cm⁻¹). On the contrary, the mode at 1051 cm⁻¹ is more enhanced than the mode at 1009 cm⁻¹ when the negative electric field is applied on the complex. The Raman spectra could be modulated by tuning the strength and direction of the electric field. Copyright © 2013 John Wiley & Sons, Ltd.     

二氢化钚分子激发态结构的外场效应

采用密度泛函(DFT)方法B3LYP/Gen，在Pu为SDD基组、H为6-311++G^**基组水平上优化得到了分子轴方向不同电偶极场(-0.005—0.005a.u.)作用下，二氢化钚的基态电子状态、几何结构、电偶极矩和分子总能量.在优化构型下用同样的基组采用含时密度泛函(TDDFT)方法(TD-B3LYP)研究了同样外电场条件下对二氢化钚的激发能和振子强度的影响.计算结果表明，分子几何构型与电场大小和方向呈现较强的依赖，电场强度增加基态偶极矩随电场强度线性增加，H-Pu-H的角度线性减小，分子总能量线性减小；激发能随电场强度增加而减小，且对电场方向的依赖呈现近似对称性，满足Grozema关系.电场对振子强度的影响比较复杂，但仍满足跃迁选择定则. 关键词： 二氢化钚 激发态 电偶极场 TD-DFT     

Influence of a magnetic field on the electronic Raman response in high-Tc cuprates

The effect of a magnetic field parallel to the CuO₂ plane on the Raman spectra is investigated based on the Slave–Boson approach to the t − t′ − J model with a Zeeman field and the random-phase approximation. We find that the Raman spectra intensities in the superconducting (SC) state are suppressed for both the B_1g and the B_2g channels with a slight shift of the peaks position toward lower frequency in the B_1g channel and a negligible shift in the B_2g channel due to the Zeeman splitting. There is a field-induced peak and dip structure at low energy response in the B_2g channel at very low temperature. While rising temperature has a similar effect in reducing the Raman response peak in the superconducting (SC) state, it smears out the field-induced peak and dip structure in the B_2g channel. We compare these results with experiments and give explanations based on the field-induced changes of the density of the superconducting condensate, the momentum distribution of the quasiparticle energy and the scattering rate.     

Study of resonant tunneling in Au nanoclusters on the surface of SiO2/Si thin films using the combined scanning tunneling microscopy and atomic-force microscopy technique

The morphology and electronic properties of Au nanoclusters on the surface of SiO₂ thin films on n ⁺-Si substrates are studied using the combined scanning tunneling microscopy (STM) and atomic-force microscopy (AFM) technique. The peaks associated with the resonant tunneling of electrons from the states of the valence band of the probe material to the states of the conduction band of the substrate material through Au nanoclusters are observed on the current-voltage characteristics for the contact of a p ⁺-Si AFM probe with Au nanoclusters. Experimental results are interpreted by calculating the tunnel transparency of the SiO₂/Au/SiO₂ double barrier structure in a strong electric field.     

Tunable band structure effects on ballistic transport in graphene nanoribbons

Graphene nanoribbons (GNR) in mutually perpendicular electric and magnetic fields are shown to exhibit dramatic changes in their band structure and electron transport properties. A strong electric field across the ribbon induces multiple chiral Dirac points, closing the semiconducting gap in armchair GNRs. A perpendicular magnetic field induces partially formed Landau levels as well as dispersive surface-bound states. Each of the applied fields on its own preserves the even symmetry Ek=E−k of the subband dispersion. When applied together, they reverse the dispersion parity to be odd and gives Ee,k=−Eh,−k and mix the electron and hole subbands within the energy range corresponding to the change in potential across the ribbon. This leads to oscillations of the ballistic conductance within this energy range.     

Electric field induced anomalies in frequency shift and collisional perturbations in the 5snd D2 Rydberg series of strontium in a heatpipe setup with ionization detection

We have examined the effect of weak DC electric field (2-20 V/cm) complimented by foreign gas collisions on the bound J = 2 even-parity 5snd ¹D₂ Rydberg states of neutral strontium. We use resonant two-photon transverse excitation, employing a narrow bandwidth tunable dye laser and an atomic jet in a heatpipe setup with ionization detection. In this paper we report certain anomalies in the observed spectra covering principal quantum number range n = 27-42 indicating a frequency shift reversal with nearly quadratic dependence on the field strength above an anti-resonance region. Furthermore, we have observed the emergence of highly localized doubly-excited 4d² states, including a remarkably broad perturber with large angular momentum, uncovering orbital contraction effect. This non-Rydberg excitation, which intrudes upon the two-photon spectrum with large energy overlap is due to single-photon excitations from the 5s5p ¹P₁ resonance level following molecular dissociation of the Sr₂ dimers suitably governed by binary atomic collisions. Our study which involves laser excitation complimented by electric field and collisions using inexpensive home-made setup opens up the possibilities for a new class of experiments, with considerable simplicity in the choice of excitation schemes for both Rydberg and non-Rydberg transitions, to reach states lying at high energies which cannot otherwise be accessed from the ground state due to parity and selection rules, while allowing one to probe localization properties of atomic wave functions.     

Au原子高Rydberg态场致电离的实验研究

利用电热法将含金物质加热,产生Au原子束,再以两束UV脉冲激光垂直照射,将处于基态的Au原子共振激发至高Rydberg态。滞后于激光脉冲200ns的高压脉冲电场(6500V/cm)加到反应区,使处于Rydberg态的Au原子电离。激光波长在一定范围内扫描,共测出了Au原子的n²D_3/2(n=18—38)和n²S_1/2(n=21—34;36—38)两通道的38条能级的位置。用参数拟合得到²D_3/2和²S_1/2两系列的极限分别为:E_D=74409.8(3)cm^-1,E_S=74410.0(2)cm^-1,计算了每条能级的量子亏损。我们的实验还证明了场电离是一种十分有效的电离手段,比用通常的激光光电离效率要高得多。这在共振电离谱学(RIS)的研究中是一种很有效的方法。 关键词：     

Compatibility of field emitter studies of oscillating surface reactions with single crystal measurements: catalytic CO oxidation on Pt

Kinetic oscillations in catalytic CO oxidation on Pt have been studied on large (millimeter size) single crystal planes of Pt as well as on a Pt field emitter tip that exposes different crystal facets of nanometer size. In order to examine the compatibility of results from the two types of experiments, the regions of different dynamical behavior (bifurcation diagram) have been mapped out in p_CO,T-parameter space using a field electron microscope (FEM) and a field ion microscope (FIM). The comparison with the results of single crystal measurements shows that in the case of applied electrostatic fields less than 5 V nm⁻¹ (FEM), the field-induced effects are negligible, but they are significant for fields exceeding 12 V nm⁻¹ (FIM). The field-induced shift of the bifurcation diagram toward lower p_CO values, observed with FIM, is explained in terms of a field-modified interaction of CO and O₂ with Pt studied here with field ion appearance energy spectroscopy. With coadsorbed lithium (submonolayer coverage), the existence range for rate oscillations is shifted toward higher p_CO values. This shift is attributed to a redistribution of the electron density at the surface induced by alkali metal co-adsorption.     

Effect of electric field on the optical absorption of amorphous molecular semiconductors doped with polymethine dyes

The effect of a dc electric field on the evolution of the electronic absorption spectra of poly(N-epoxypropylcarbazole) (PEPC), poly(styrene) (PS), and poly(vinyl butyral) (PVB) films doped with methine dyes is investigated. It is revealed that these spectra in the absorption range of the dye undergo transformations depending on the dipole moment and the symmetry of the π-electron structure of dye molecules. The inference is made that the electron density in the dye molecule is redistributed in an external electric field. This redistribution gives rise to the electric field-induced anisotropy in the spatial distribution function of photogenerated electron-hole pairs in amorphous molecular semiconductors.     

Microwave spectrum of the OD-OH2 complex: A strong deuterium isotope effect on angular momentum quenching in the hydroxyl moiety

Microwave spectra of the hydrogen bonded complex ¹⁶OD-¹⁶OH₂ have been recorded using pulsed-nozzle Fourier transform microwave spectroscopy. The potential splitting, ρ, which describes the partial quenching of the OD orbital angular momentum upon complexation, is determined to be −142.703173(65) cm⁻¹. Within the spectroscopic model employed, this value implies an energy difference of 202.46 cm⁻¹ between the ground (²A′) and first excited (²A′′) states of the complex. The observed value of ρ represents a rather large change of 3.85710(11) cm⁻¹ relative to that in the parent complex and implies a 1.30 cm⁻¹ decrease in the ²A′-²A′′ energy spacing relative to the parent species. Comparison with previous results for the ¹⁸OH complex suggests that these changes likely arise from changes in vibrationally averaged geometry upon deuteration. Magnetic hyperfine structure from the deuterium and the water protons is analyzed, as is the nuclear electric quadrupole coupling of the deuterium nucleus. Assuming negligible changes in the axial component of the electric field gradient at the deuterium upon complexation, the deuterium quadrupole coupling constant implies an average angular excursion of the OD bond axis from the vibrationally averaged a-inertial axis of the complex of ∼24°.     

Investigation of the dynamics of dissipative U+Au collisions with δ-electron spectroscopy

δ-electron emission in elastic and dissipative collisions of U+Au at E/A = 8.65 MeV has been investigated. The velocity vectors of the reaction products were measured in coincidence with electrons of energies up to 3.2 MeV. The δ-electron yield measured for elastic collisions is in good agreement with coupled-channels calculations. The δ-electron spectra of dissipative reactions show a clear dependence on the violence of the collision, i.e. the total kinetic energy loss (TKEL). The shape of the spectra are analysed with an atomic model by a fitting procedure using phenomenological trajectories. The results indicate an increasing contact time of the united system with increasing total kinetic energy loss reaching 1.16(4) × 10^?21 s at < TKEL > = 375 MeV.     

Nonideality of Au/Si and Au/GaAs Schottky barriers due to process-induced defects

A mechanism of local lowering of the Schottky barrier height (SBH) is proposed, which causes nonideality in nearly ideal Au/n-Si and Au/n-GaAs Schottky barriers. Positively ionized defects generated by the process very close to the interface induce electrons in the metal-induced gap states (MIGS) and lower the SBH locally. The spatial density distribution of the ionized defects obtained from the SBH distribution is determined by the unique interaction with the MIGS. The defects are considered to have the negative-U property and are neutralized at very close positions to the MIGS. The potential distributions close to the interface have a considerable potential drop due to the large defect density. These inhomogeneous potentials are coincident with the energy level scheme of the defect identified as the defect causing the nonideality. This defect is Si self-interstitial in Au/Si SB, and As antisite in Au/n-GaAs SB. This MIGS with process-induced defect model supersedes the previously proposed two major Fermi level pinning models. The mystery of the T₀ effect is solved. The thermionic-field emission current taking place in the strong electric field has influence on the I-V characteristics at low temperatures. Regarding the C-V characteristics of Au/Si SB, the observed extra capacitance under the forward bias is an experimental evidence in accordance with the proposed model.     

Theory of resonant forbidden Raman scattering in semiconductors

The Raman tensors for the electric field-induced and wavevector dependent scattering from LO phonons in semiconductors have been calculated near critical points using a perturbation treatment. The resulting expressions have analytic closed forms such that the dependence of the forbidden scattering intensity on the incident photon energy and the applied d.c. electric field can be evaluated from available energy band parameters. The forbidden LO scattering intensity of GaAs in the back scattering configuration has been numerically calculated near the e₁ and E₁ gaps as functions of the incident photon energy and the dc electric field. The result shows strong interference between the two scattering processes. The allowed TO and LO Raman scattering intensities of GaAs were also calculated at a wavelength of 1.06 μm from the SHG and Faust-Henry coefficients, and compared with the forbidden LO intensity.     

Doping dependence of the superconducting gap by Andreev reflection in Au/La2−xSrxCuO4 point-contact junctions

We studied the doping dependence of the superconducting gap in La_2−xSr_xCuO₄ (LSCO) by means of Andreev reflection measurements in Au/LSCO point-contact junctions. The Andreev reflection features were found to disappear at T_c^A close to the bulk T_c. The fit of the conductance curves with the BTK-Tanaka-Kashiwaya model gives good results if a (s+d)-wave gap symmetry is used. The low-temperature dominant isotropic gap component Δ_s follows very well the T_c vs. x curve, while the gap-like features observed by angle-resolved photoemission spectroscopy and tunneling scale with T^∗. This confirms the different origin of these two energy scales at T<T_c.