First-principles study on the electronic structures and absorption spectra for the PbWO4 crystal with lead vacancy

The electronic structures and absorption spectra for the perfect PbWO₄ (PWO) crystal and the crystal containing lead vacancy have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing exhibit seven absorption bands peaking at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), which are very close to the experimental values. It predicts that the 330, 360, 420, 500-750 nm absorption bands are related to the existence of in the PWO crystal.     

First-Principles Studies on Electronic Structures and Absorption Spectra of PbWO4 Crystals with Defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-c

Electronic structures and absorption spectra for perfect PbW04 （PWO） crystals and the crystal containing aggregated defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing the aggregated defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-exhibit two absorption bands peaking at 1.90eV （65Onto） and 3.02eV （41Onto）. It is predicted that the 420 and fiSOnm absorption bands are related to the existence of the aggregated defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-in the PWO crystal.     

First Principles Study on Electronic Structures of Mn^2＋：CdMoO4 Crystals

Electronic structures of the Mn^2＋ ：CdMoO4 crystal axe studied within the framework of the fully relativistic self-consistent Dirac Slater theory, using a numerically discrete variation （DV-Xα） method. The calculated results indicate that the 3d states of Mn have donor energy level in the forbidden band of CdMoO4 crystal. The O^2- transition energy of O 2p→Mn 3d is 3.12eV under excitation corresponding electronic transition being O^2-＋Mn^2＋→↑hvex=3.12 eV O^-- ＋Mn^＋→↑hvem O^2-＋Mn^2＋. It is predicted that the wavelength of emission should be located in the range of the 500-600nm. Thus the 500-600mm emission bands peaking at 550nm （2.25eV） of CdMoO4 crystal under excitation may be related to the Mn-like dopant ion in CdMoO4 crystal.     

Mechanism of Th, Zr doping in PbWO4 crystals

To check the doping mechanism of trivalent ion doping in PbWO₄ (PWO) and verify the formation of dipoles [2M_Pb³⁺-V_Pb], the researches on an investigation of tetravalent ion (Th⁴⁺, Zr⁴⁺) doped PWO was conducted by dielectric loss spectroscopy, thermoluminescence and optical absorption spectroscopy. The doping mechanism of tetravalent ion doping is similar to that of trivalent ion doping, while the dipole defects should be formed more easily due to the convenience for the two defects V_Pb and M_Pb⁴⁺ to get close to each other. However, in the case of Zr⁴⁺ doping, Zr was found to enter interstitial sites because of its small ionic radius, with the introduced charges compensated by V_Pb far away and hence does not exert an obvious influence on the performance of this material. Thus, no dielectric relaxation was found in the DS (dielectric spectra) experiment.     

Computer simulation of intrinsic defects in YAlO3 single crystal

Computer simulation techniques were used to investigate intrinsic defects in YAlO₃ single crystal. A set of short-range potential parameters were derived using a relaxed fitting procedure incorporating with the known crystal properties. These parameters were then applied within the framework of the shell model. The simulation results reveal that oxygen Frenkel disorder and the antisite defect of Al ion substituting the Y ion dominate the intrinsic defects in YAlO₃. An analysis of redox reactions corroborate that the oxidation is most likely to occur via forming interstitial oxygen, while the oxidation via filling oxygen vacancies and reduction reaction may predominate at high temperature. The activation energy of oxygen vacancy migration on conduction was also studied.     

First-principles study on electronic structures of BaWO4 crystals containing F-type color centers

The electronic structures of BaWO₄ crystals containing F-type color centers are studied within the framework of the fully relativistic self-consistent Dirac-Slater theory, using a numerically discrete variational (DV-Xα) method. It is concluded that F and F⁺ color centers have donor energy level in the forbidden band. The optical transition energies are 2.449 and 3.101 eV, which correspond to the 507 and 400 nm absorption bands, respectively. It is predicted that 400-550 nm absorption bands originate from the F and F⁺ color centers in BaWO₄ crystals.     

Optical investigation of charge-transfer transitions in spinel Co3O4

Optical transitions in normal-spinel Co₃O₄ have been identified by investigating the variation of its optical absorption spectrum with the replacement of Co by Zn. Three optical-transition structures were located at about 1.65, 2.4, and 2.8 eV from the measured dielectric function of Co₃O₄ by spectroscopic ellipsometry. The variation of the absorption structures with the Zn substitution (Zn_xCo_3−xO₄) can be explained in terms of charge-transfer transitions involving d states of Co ions. The 1.65 eV structure is assigned to a d-d charge-transfer transition between the t_2g states of octahedral Co³⁺ ion and t₂ states of tetrahedral Co²⁺ ion, t_2g(Co³⁺)→t₂(Co²⁺). The 2.4 and 2.8 eV structures are interpreted as due to charge-transfer transitions involving the p states of O²⁻ ion: p(O²⁻)→t₂(Co²⁺) for the 2.4 eV absorption and p(O²⁻)→e_g(Co³⁺) for the 2.8 eV absorption. The observed gradual reduction of the 1.65 and 2.4 eV absorption strength with the increase of the Zn composition for Zn_xCo_3−xO₄ can be explained in terms of the substitution of the tetrahedral Co²⁺ sites by Zn²⁺ ions. The crystal-field splitting Δ_Oh between the e_g and the t_2g states of the octahedral Co³⁺ ion is estimated to be 2 eV.     

The optical absorption edge of brookite TiO2

The optical absorption edge of brookite TiO₂ was measured at room temperature, using natural crystals. The measurements extend up to 3.54 eV in photon energy and 2000 cm⁻¹ in absorption coefficient. The observed absorption edge is broad and extends throughout the visible, quite different from the steep edges of rutile and anatase. No evidence of a direct gap is seen in the range measured. The spectral dependence of the absorption strongly suggests that the brookite form of TiO₂ is an indirect-gap semiconductor with a bandgap of about 1.9 eV.     

Electronic Structures of PbMoOa Crystals with F-Type Colour Centres

Electronic structures of PbMoO4 crystals containing F-type colour centres with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac-Slater theory, using a numerically discrete variational （DV-Xa） method. The calculated results show that F and F＋ centres have donor energy levels in the forbidden band. The optical transition energies are 2.166eV and 2.197eV, respectively, corresponding to the 580nm absorption bands in PbMoO4 crystal. The 580nm absorption band in PbMoO4 is originated from the F-type colour centres.     

First-principles study of color centers in PbMoO4 crystals

Electronic structures of PbMoO₄ crystals containing Mn ion impurities located at Pb²⁺ sites are studied within the framework of the fully relativistic self-consistent Direc-Slater theory, using a numerically discrete variational (DV-Xα) method. The calculated results show that Mn²⁺ ions have donor energy levers in the forbidden band, which may correspond to the yellowish color absorption band of PbMoO₄ as-grown in air. The new-formed Mn³⁺ ions have acceptor energy levers in the forbidden band, which may relate to the photochromic effect in PbMoO₄ crystal.     

Effect of In-Doping on Electronic Structure and Optical Properties of Sr2TiO4

The effect of In doping on the electronic structure and optical properties of Sr2 TiO4 is investigated by a firstprinciples calculation of plane wave ultrasoft pseudopotentials based on density functional theory. The calculated results reveal that corner-shared TiO6 octahedra dominate the main electronic properties of Sr2TiO4 and the covalency of the Ti-O（1） bond in the ab plane is stronger than that of the Ti-O（2） bond along the c-axis. After In doping, there is a little lattice expansion in Sr2In0.125 Ti0.875 O4 and the interaction between the Ti-O bond near the impurity In atom is weakened. The binding energies of Sr2TiO4 and Sr2In0.125Ti0.875O4 estimated from the electronic structure calculations indicate that the crystal structure of Sr2In0.125 Ti0.875 O4 is still stable after doping, but its stability is lower than that of undoped Sr2TiO4. Moreover, the valence bands （VBs） of the Sr2In0.125Ti0.875O4 system consist of O 2p and In 4d states, and the mixing of O 2p and In 4d states makes the top VBs shift significantly to high energies, resulting in visible light absorption. The adsorption of visible light is of practical importance for the application of St2 TiO4 as a photocatalyst.     

Electronic structure calculations of transparent conductor Cd3TeO6: Optical properties and the effect of In-substitution

The electronic structure of Cd₃TeO₆ has been studied in the terms of first-principles calculations based on the density functional theory in order to investigate their optical properties and In-substitution effects. It was found that the highly dispersed bottom of the conduction band formed from Cd-s orbitals is the origin of the high transparency and conductivity. Cd₃TeO₆ exhibited optical anisotropy in its main crystal axes, and the c-axis showed the most suitable crystal growth direction for obtaining a wide transparent region. A pronounced shift of the absorption edge was effectively observed by the In-substitution, reflecting the domination of the In-5s level in the conduction band near the Fermi level.     

Orientation kinetics of the hexavacancies—V6 (B80) in silicon

A phenomenological kinetic equation is proposed to describe a process of a hexavacancy (V₆) orientation in silicon samples. The orientation kinetics of V₆ was investigated under a uniaxial compressional stress along the [111] axis of the crystal. Parameters appeared in the matrix equation of the orientation kinetics of V₆ as functions of pressure and annealing temperature were obtained and their values were estimated. In the case of the inequivalent V₆ centers, the pressure dependence of the difference in the magnitude of their binding energies was determined.     

Growth and optical property of ZnWO4: Er crystal

Good quality crystals ZnWO₄ activated with Er³⁺ have been grown by means of Czochralski method and characterized using optical spectroscopy techniques. XRD, absorption spectra, fluorescence spectrum are presented and the Judd-Ofelt intensity parameters Ω₂, Ω₄, and Ω₆ are obtained to be 6.76×10^-20, 0.37×10^-20, and 0.50×10^-20 cm², respectively. Along crystallographic axes, refractive indices are presented. The fluorescence decay time of the ⁴I_13/2 level has also been investigated and shows an exponential behavior with a lifetime value of 5.52 ms. The crystal is potentially used for green and infrared eye-safe lasers.     

Influence of temperature annealing on optical properties of SrTiO3/BaTiO3 multilayered films on indium tin oxide

We have prepared SrTiO₃/BaTiO₃ thin films with multilayered structures deposited on indium tin oxide (ITO) coated glass by a sol-gel deposition and heating at 300-650 °C. The optical properties were obtained by UV-vis spectroscopy. The films show a high transmittance (approximately 85%) in the visible region. The optical band gap of the films is tunable in the 3.64-4.19 eV range by varying the annealing temperature. An abrupt decrease towards the bulk band gap value is observed at annealing temperatures above 600 °C. The multilayered film annealed at 650 ° C exhibited the maximum refractive index of 2.09-1.91 in the 450-750 nm wavelength range. The XRD and AFM results indicate that the films annealed above 600 ° C are substantially more crystalline than the films prepared at lower temperatures which were used to change their optical band gap and complex refractive index to an extent that depended on the annealing temperature.     

First-principles calculations of the electronic and optical properties of In6S7 compound

The electronic structure and the optical properties of In₆S₇ crystal are calculated by the first-principles full-potential linearized augmented plane wave method (FP-LAPW) using density functional theory (DFT) in its generalized gradient approximation (GGA). The calculated band structure shows that the In₆S₇ is a semiconductor with a direct band gap in good agreement with experimental studies. Furthermore, the dielectric tensor and the optical properties, such as absorption coefficient, refractive index, extinction coefficient, energy-loss spectrum and reflectivity, are derived and analyzed in the study.     

Spectral properties of Nd:Ca2Nb2O7 crystal

This paper reports the spectral properties of Nd³⁺:Ca₂Nb₂O₇. The spectral parameters of Nd³⁺ in Nd³⁺:Ca₂Nb₂O₇ crystal have been investigated based on Judd-Ofelt theory. The spectral parameters were obtained. The parameters of line strengths Ω_λ are Ω₂=4.967×10⁻²⁰ cm², Ω₄=5.431×10⁻²⁰ cm², Ω₆=5.693×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 122 μs, 103 μs and 84.4%, respectively. The fluorescence branch ratios calculated: β₁=0.425, β₂=0.479, β₃=0.091, β₄=0.004. The emission cross section at 1068 nm is 6.204×10⁻²⁰ cm².     

Luminescence spectra of Eu ions and interstitial oxygen in PbWO4 crystal

The site-selective excitation and emission spectroscopy, and luminescence decay have been investigated under a pulsed, tunable, narrowband dye laser of the ⁵D₀→⁷F₀ region in the europium ions-doped lead tungstate PbWO₄ (PWO) in single crystal. In as-grown sample, the experimental results show that there is only one ⁷F₀→⁵D₀ excitation transition indicating the only one Eu³⁺ site in PbWO₄ lattices. The sequential annealing treatments were conducted to investigate the effects of oxygen components on the microstructure environments of Eu³⁺ in the lattices. The site distribution of Eu³⁺ was changed by the annealing in air atmosphere, which could create new sites in PWO lattices. Confirmation of interstitial oxygen and interpretations of charge compensation mechanism for the observed new sites were discussed in the context of site-selective excitation and emission spectra. The main Eu³⁺ site is related to the charge compensation by the [(Eu_Pb³⁺)-V″_Pb-(Eu_Pb³⁺)] complex; the other minor new sites after annealing are originated from [(Eu_Pb³⁺)-O″_i-(Eu_Pb³⁺)] defects. Emission spectra excited by 355-laser and RT-Raman spectra were also measured.     

Electronic Structure and Optical Properties of Semiconducting Orthorhombic BaSi2

Full potential linearized augmented plane wave （FPLAPW） method calculations are carried out for semiconducting orthorhombic BaSi2. The optical properties and the origin of the different optical transitions are investigated. Our calculated band gap of 1.0918eV is indirect, which is in good agreement with the experimental result. The bonds between Ba and Si are considered to be electrovalent bond. The anlsotropy in the imaginary part ε2（w） and real part εl（w） of the optical dielectric tensor are analysed. The contributions of various transition peaks are explained from the imagnary part of the dielectric function.     

A low temperature synthesis of crystalline B4C ultrafine powders

B₄C ultrafine powders were successfully synthesized at 450 °C through a new co-reduction route. The synthesis was carried out in an autoclave by using BBr₃ and CCl₄ as the reactants and metallic Na as the co-reductant. The X-ray powder diffraction pattern and Raman spectra indicate the formation of B₄C. An atomic ratio of B to C of 4.09:1.0 was determined from X-ray photoelectron spectra. Transmission electron microscopy images shows that typical B₄C crystallites are composed of uniform ultrafine spherical and rod-like particles.