Tunable afterglow color in Eu and Dy co-activated alkaline earth feldspar solid solutions phosphors

The Eu²⁺ and Dy³⁺ co-activated Ca-Sr feldspar solid solution compounds, (Ca_0.98−xSr_x)Al₂Si₂O₈:Eu_0.01,Dy_0.01 (x=0-0.98), have been prepared by solid-state reaction in weak reductive atmosphere. The fluorescence spectra showed that the emission peaks of these phosphors shifts to shorter wavelength with an increase of Sr²⁺ solid solution quantity and correspondingly the afterglow color changes from blue to purple. All the changes can be attributed to the various crystal fields around Eu²⁺ ions. The afterglow with special short wavelength in near ultraviolet region can be obtained by adjusting the host chemical composition.     

Eu substitution and particle size control of Y2O2S for the excitation by UV light emitting diodes

Yttrium oxysulfide doped with europium (Y₂O₂S:Eu³⁺) red phosphor is used in UV light emitting diodes (LEDs) by mixing with blue and green phosphors to generate white light which are important for the application in general lighting. Here, we demonstrate the effect of shape and size and the concentration of activator (Eu) of red Y₂O₂S phosphor.     

Origin of PL intensity increase of CaMgSi2O6:Eu phosphor after baking process for PDPs application

We have synthesized blue-emitting CaMgSi₂O₆:Eu²⁺ (CMS) and evaluated its thermal stability after baking process. To evaluate its thermal stability, CMS was baked in air at 500 and 600 °C for 20 min, respectively, and compared with BaMgAl₁₀O₁₇:Eu²⁺ (BAM) treated in the same condition. After baking process, CMS showed somewhat increased photoluminescence (PL) intensity with baking temperature. To investigate the reasons behind the increase of PL intensity after baking process, vacuum ultraviolet (VUV)/PL, electron spin resonance (ESR), X-ray photoelectron spectroscopy (XPS) techniques were applied. From the ESR and the XPS analyses, it is noted that spectral intensity of Eu²⁺ ion somewhat increased. It was believed that due to charge balance Eu³⁺ ions reduced to Eu²⁺ ions during the baking process in air. It is clear that the concentration of Eu²⁺ increased after the baking process in air and it leads to slight increase of the VUV/PL intensity of CMS phosphor.     

Enhancement of red spectral emission intensity of Y3Al5O12:Ce phosphor via Pr co-doping and Tb substitution for the application to white LEDs

We have enhanced color-rendering property of a blue light emitting diode (LED) pumped white LED with yellow emitting Y₃Al₅O₁₂:Ce³⁺ (YAG:Ce) phosphor using addition of Pr and Tb as a co-activator and host lattice element, respectively. Pr³⁺ addition to YAG:Ce phosphor resulted in sharp emission peak at about 610 nm through ¹D₂→³H₄ transition. And when Tb³⁺ substituted Y³⁺ sites, Ce³⁺ emission band shifted to a longer wavelength due to larger crystal field splitting. Y₃Al₅O₁₂:Ce³⁺, Pr³⁺ and (Y_1−xTb_x)₃Al₅O₁₂:Ce³⁺ phosphors were coated on blue LEDs to fabricate white LEDs, respectively, and their color-rendering indices (CRIs, R_a) were measured. As a consequence of the addition of Pr³⁺ or Tb³⁺, CRI of the white LEDs improved to be R_a=83 and 80, respectively. Especially, blue LED pumped (Y_0.2Tb_0.8)₃Al₅O₁₂:Ce³⁺ white LED showed both strong luminescence and high color-rendering property.     

Quenching of thermo-stimulated photo-ionization by energy transfer in CaAl4O7: Tb, Ce

Crystal fibers of Ce³⁺ and Tb³⁺ singly doped and co-doped CaAl₄O₇ were grown by the LHPG method. Photoluminescence, excitation spectra and photoconduction were measured. Thermo-stimulated photo-ionization (delocalization) of electrons from the lowest field component of the 5d excited state of Ce³⁺ was observed in the Ce³⁺ singly doped sample under excitation at 355 nm. The 5d sublevel was found to locate at 0.3 eV below the conduction band of the host. However, the thermo-stimulated photo-ionization was greatly quenched due to the fast energy transfer from the 5d sublevel to Tb³⁺ ions in the Ce³⁺/Tb³⁺ double doped sample.     

New red phosphors BaZr(BO3)2 and SrAl2B2O7 doped with Eu for PDP applications

Vacuum ultraviolet (VUV) excitation and photoluminescence (PL) characteristics of Eu³⁺ ion doped borate phosphors; BaZr(BO₃)₂:Eu³⁺ and SrAl₂B₂O₇:Eu³⁺ are studied. The excitation spectra show strong absorption in the VUV region with the absorption band edge at ca. 200 nm for BaZr(BO₃)₂:Eu³⁺ and 183 nm for SrAl₂B₂O₇:Eu³⁺, respectively, which ensures the efficient absorption of the Xe plasma emission lines. In BaZr(BO₃)₂:Eu³⁺, the charge transfer band of Eu³⁺ does not appear strongly in the excitation spectrum, which can be enhanced by co-doping Al³⁺ ion into the BaZr(BO₃)₂ lattices. The luminescence intensity of BaZr(BO₃)₂:Eu³⁺ is also increased by Al³⁺ incorporation into the lattices. The PL spectra show the strongest emission at 615 nm corresponding to the electric dipole ⁵D₀→⁷F₂ transition of Eu³⁺ in both BaZr(BO₃)₂ and SrAl₂B₂O₇, similar to that in YAl₃(BO₃)₄, which results in a good color purity for display applications.     

Photoluminescence characteristics of energy transfer between Er and Bi in Gd2O3: Er, Bi

The phosphors, Bi³⁺- activated Gd₂O₃:Er³⁺, were prepared by sol-gel combustion method, and their photoluminescent properties were investigated under ultraviolet light excitation. The emission spectrum exhibited sharp peaks at about 520, 535, 545, 550 and 559 nm due to (²H_11/2, ⁴S_3/2)→⁴I_15/2 transitions of Er³⁺ ions. The luminescent intensity was remarkably improved by the incorporation of Bi³⁺ ions under 340 nm light excitation, which suggested very efficient energy transfer from Bi³⁺ ions to Er³⁺ions. The introducing of Bi³⁺ ions broadened the excitation band of the phosphor, of which a new strong peak occurred ranging from 320 to 360 nm due to the 6s²→6s6p transition of Bi³⁺ ions. There is significant energy overlap between the emission band of Bi³⁺ ions and the excitation band of Er³⁺ ions. Under 340 nm light excitation, Bi³⁺ absorbed most of the energy and transferred it to Er³⁺. The energy transfer probability from Bi³⁺ to Er³⁺ is strongly dependent on the Bi³⁺ ion concentration. Also, the sensitization effectiveness was studied and discussed in this paper.     

Synthesis and photoluminescence of CeO2:Eu phosphor powders

The crystalline structure and photoluminescence (PL) properties of europium-doped cerium dioxide synthesized by the solid-state reaction method were analyzed. CeO₂:Eu³⁺ phosphor powders exhibit the pure cubic fluorite phase up to 10 mol% doping concentration of Eu³⁺. With indirect excitation of CeO₂ host at 373 nm, the PL intensity quickly increases with increasing Eu³⁺ concentration, up to about 1 mol%, and then decreases indicating the concentration quenching. While with direct excitation (467 nm), much more stronger PL emissions, especially the electric dipole emission ⁵D₀-⁷F₂ at 612 nm, are observed and no concentration quenching occurs up to 10 mol% doping concentration of Eu³⁺. The nature of this behavior and the cause of the concentration quenching were discussed.     

Luminescent mechanism of Y2SiO5:Ce phosphor powder

A luminescent mechanism was constructed for the broad band emission spectra of the X₁ phase of the Y₂SiO₅:Ce phosphor powder. Four Gaussian peaks fit to the cathodoluminescent (CL) and photoluminescent (PL) spectra were attributed to the two different sites (A1 and A2) of the Ce³⁺ ion in the host matrix and the difference in orientation of the neighbour ions in the complex crystal structure. Each Ce³⁺ site gives rise to transitions from the 5d to the two (therefore two peaks) 4f energy levels (²F_5/2 and ²F_7/2 due to crystal field splitting). Energy transfer from other defect levels in the matrix was also observed.     

Luminescence and energy transfer processes in Lu2SiO5:Ce scintillator

The energy transfer processes in Lu₂SiO₅:Ce³⁺ luminescence was investigated through the temperature dependent luminescence under excitation with VUV-UV. Ce1 center emission peaking at 393 and 422 nm and Ce2 center emission peaking at 462 nm were observed. Ce2 center emission is enhanced with the temperature, which can be explained by the rate of energy transfer from Ce1 center increases when the temperature rises. The Ce1 emission shows the thermal quenching effect under the direct excitation of Ce³⁺ at 262 nm. However, under the interband excitation of 183 nm, the Ce1 center emission exhibits undulating temperature dependence. This is because the emission is governed by thermal quenching and possible thermal enhancement of the transport of free carriers with the rising temperature.     

Synthesis, microstructure and photoluminescence of Eu/Tb activated Y2SiO5 nanophosphors by new silicate sources

Y_2−xTb_xSiO₅ and Y_2−xEu_xSiO₅ nanophosphors with seven different kinds of silicate sources were synthesized by sol-gel method. The structures have been investigated to be composed of nanometer-size grains of 30-60 nm through X-ray diffraction (XRD) and scanning electron microscopy (SEM) was used to compare the different morphology of patterns from seven different silicon sources. The photoluminescence of Y_2−xTb_xSiO₅ was investigated as a function of silicate sources and the results revealed that these nanometer materials showed the characteristic emission ⁵D₄ → ⁷F_J (J = 6, 5, 4, 3) of Tb ions. The characteristic emission ⁵D₀ → ⁷F_J (J = 1, 2, 4) of Eu ions was also found in the materials of Y_2−xEu_xSiO₅.     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Luminescence properties of red-emitting praseodymium-activated BaTi4O9 phosphor

The photoluminescence and low-voltage cathodoluminescence characteristics of BaTi₄O₉:Pr³⁺ were investigated. The excitation band of intervalence charge transfer (IVCT) of BaTi₄O₉:Pr³⁺ emerged distinctly at 330 nm. The resultant emissions appeared at 606-643 nm corresponding to the ¹D₂→³H₄ transition. In BaTi₄O₉:Pr³⁺, the emission of ³P₀→³H₄ transition at 490 nm was not observed. The results were in a pure red color emission.     

Cooperative emission study in ytterbium-doped Y2SiO5

Ytterbium ions infrared and visible cooperative luminescences, resulting from YAG laser and selective site excitations, in (6%) Yb-doped Y₂SiO₅ thin film are analyzed. Magnetically coupled Yb-Yb ion pairs seem to play a major role in energy transfer and cooperative emission, confirming the prevalence of superexchange mechanisms.     

Emission analysis of Dy and Pr:Bi2O3-ZnF2-B2O3-Li2O-Na2O glasses

In this paper, we present the spectral results of Dy³⁺ and Pr³⁺ (1.0 mol%) ions doped Bi₂O₃-ZnF₂-B₂O₃-Li₂O-Na₂O glasses. Measurements of X-ray diffraction (XRD), differential scanning calorimetry (DSC) profiles of these rare-earth ions doped glasses have been carried out. From the DSC thermograms, glass transition (T_g), crystallization (T_c) and melting (T_m) temperatures have been evaluated. The direct and indirect optical band gaps have been calculated based on the glasses UV absorption spectra. The emission spectrum of Dy³⁺:glass has shown two emission transitions ⁴F_7/2→⁶H_15/2 (482 nm) and ⁴F_7/2→⁶H_13/2 (576 nm) with an excitation at 390 nm wavelength and Pr³⁺:glass has shown a strong emission transition ¹D₂→³H₄ (610 nm) with an excitation at 445 nm. Upon exposure to UV radiation, Dy³⁺ and Pr³⁺ glasses have shown bright yellow and reddish colors, respectively, from their surfaces.     

In situ sol-gel composition of multicomponent hybrid precursors to luminescent novel unexpected microrod of Y2SiO5:Eu employing different silicate sources

Y₂SiO₅ doped with Eu³⁺ were in situ synthesized by a hybrid precursor assembly sol-gel technology employing four different silicate sources, 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM result shows that there exist some novel unexpected morphological microrod structures owing to using the crosslinking reagents other than TEOS as silicate source. The photoluminescent properties of Y₂SiO₅:Eu³⁺ have been studied as a function of Eu³⁺ doping concentration. A cross-relaxation process between identical Eu³⁺ ions results in the quenching of the ⁵D₁ emission for high concentration sample.     

Decay pathway and high-temperature luminescence of Eu in Ca2Gd8Si6O26

The temperature-dependent luminescence of Eu:Ca₂Gd₈Si₆O₂₆ and its decay pathways are investigated in order to assess the utility of the material as a thermometric phosphor. Non-radiative decays are found to compete with radiative processes even at room temperature. A decay pathway involving decay through charge-transfer states is proposed based on the decay profiles of emissions from ⁵D₁ and ⁵D₀ levels and on the temperature sensitivity of the spectra as observed after excitation by several wavelengths. The implications of this on solid-state lighting are also discussed.     

Temperature dependent characteristics of La2O2S: Ln [Ln=Eu, Tb] with various Ln concentrations over 5-60 °C

This research is aimed at developing an optical sensor for remotely measuring human skin temperature in electromagnetically hostile environments, such as within a magnetic resonance imaging (MRI) scanner. In this feasibility study, various concentrations of europium-doped lanthanum oxysulphide (La₂O₂S: Eu—0.1-15 mol% (m/o)) and terbium-doped lanthanum oxysulphide (La₂O₂S: Tb—0.005-50 m/o) have been investigated in terms of crystallinity, photoluminescent (PL) spectral and decay time characteristics. For both phosphors, X-ray diffraction (XRD) has shown that as dopancy increases, the (1 0 0) and (0 0 2) reflections merge and there is a reduction in the c-axis parameter as well as the crystallite size. Photoluminescent characterisation (337 nm excitation) has also shown a dependency to dopant concentration through variance of peak intensity. Temperature dependent decay time measurements were carried out over a low temperature range 5-60 °C. Optimum brightness of these temperature dependent lines is achieved at concentrations of 1 and 10 m/o for La₂O₂S: Eu and La₂O₂S: Tb respectively. However, optimum temperature dependency is achieved at lower concentration for La₂O₂S: Eu, specifically at 0.1 m/o. In comparison to conventional phosphor temperature dependent characteristic, La₂O₂S: Tb showed an increase in decay time with respect to temperature for concentrations above 2 m/o.     

Optical and structural properties of nanosized ZnGa2O4:Cr phosphor

Nanosized ZnGa₂O₄:Cr³⁺ powder is synthesized through hydrothermal method. The average particle size is 20 nm and they are spherical in shape. The excitation band from the charge transfer between Cr³⁺-O²⁻ shows a blueshift behavior due to quantum confinement effect. X-ray diffraction pattern, Fourier transform-infrared spectrum, and electron paramagnetic resonance signal indicate that nanosized ZnGa₂O₄:Cr³⁺ phosphor shows many defect-related energy states and heavy lattice distortion in comparison with bulk ZnGa₂O₄:Cr³⁺ phosphor. Many defect states result in more nonradiative loss and shorter decay time.     

Potential PDP phosphors with strong absorption around 172 nm: Rare earth doped NaLaP2O7 and NaGdP2O7

NaLaP₂O₇ and NaGdP₂O₇ powder samples are prepared by solid-state reactions at 750 and 600 °C, respectively, and the VUV-excited luminescence properties of Ln³⁺ (Ln=Ce, Pr, Tb, Tm, Eu) in both diphosphates are studied. Ln³⁺ ions in both hosts show analogous luminescence. For Ce³⁺-doped samples, the five Ce³⁺ 5d levels can be clearly identified. As for Pr³⁺ and Tb³⁺-doped samples, strong 4f-5d absorption band around 172 nm is observed, which matches well with Xe-He excimer in plasma display panel (PDP) devices. As a result, Pr³⁺ can be utilized as sensitizer to absorb 172 nm VUV photon and transfer energy to appropriate activators, and Tb³⁺-doped NaREP₂O₇(RE=La, Gd) are potential 172 nm excited green PDP phosphors. For Tm³⁺ and Eu³⁺-doped samples, the Tm³⁺-O²⁻ charge transfer band (CTB) is observed to be at 177 nm, but the CTB of Eu³⁺ is observed at abnormally low energy position, which might originate from multi-position of Eu³⁺ ions. The similarity in luminescence properties of Ln³⁺ in both hosts indicates certain structural resemblance of coordination environment of Ln³⁺ in the two sodium rare earth diphosphates.