Luminescent properties of ZnO thin films treated by pulse-modulated high-power inductively coupled plasma

The effect of hydrogen plasma irradiation on luminescence properties of ZnO thin films was studied by using a pulse-modulated inductively coupled plasma technique. H-plasma exposure distance was changed to investigate the effect of hydrogen plasma irradiation on luminescent properties. Room temperature cathodoluminescence (CL) spectrum shows that hydrogen plasma irradiation can increase the efficiency of UV emission at 3.27 eV, and the improvement is strongly dependent on H-plasma exposure distance. For low temperature CL spectra, the intensity of donor-acceptor pair (DAP) transition at 3.315 eV has been increased more rapidly after hydrogen plasma irradiation, leading DAP to be the dominant transition.     

Luminescence and relaxed excited state origin in CsI:Pb crystals

Emission and excitation spectra, luminescence polarization and decay kinetics have been studied for CsI:Pb crystals in the 0.36-300 K temperature range. The origin of the excited states responsible for the optical characteristics has been discussed. It has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb²⁺ triplet state split due to the presence of a cation vacancy near a Pb²⁺ ion, while the higher-energy bands are of the charge-transfer origin. Like in CsI:Tl, four emission bands of CsI:Pb have been found to belong to the main luminescence centres. Two emission bands, peaking at 3.1 and 2.6 eV, are suggested to arise from the triplet relaxed excited state of a Pb²⁺ ion. Two visible emission bands, peaking at 2.58 and 2.23 eV, are interpreted as the luminescence of an exciton localized near the Pb²⁺ ion.     

Development of a 2D dosimetry system based on the optically stimulated luminescence of Al2O3

A laser-scanning 2D dosimetry system based on the Optically Stimulated Luminescence (OSL) signal from Al₂O₃ films was built and demonstrated. The main challenge of using the OSL from Al₂O₃ for 2D dosimetry by laser scanning is the long lifetime (∼35 ms) of the main luminescence centers in this material (F-centers). In this work, we demonstrated the possibility of performing 2D dosimetry by laser scanning using a combination of the fast UV emission of F⁺-centers (lifetime <7 ns) and the slow F-center emission of Al₂O₃:C, and an algorithm to correct for the slow F-center luminescence lifetime. We also investigated the possibility of using Al₂O₃:C,Mg, to take advantage of its greater F⁺-center emission compared to Al₂O₃:C. Results from 6 MV photon beam irradiations from a clinical linear accelerator were compared to radiographic and radiochromic film profiles showing a good qualitative agreement.     

Eu luminescence in tellurite glasses with gold nanostructures

Luminescence properties of Eu³⁺ doped TeO₂-PbO-GeO₂ glasses containing gold nanoparticles (NPs) were investigated. The emission spectra of the samples exhibited enhancement of Eu³⁺ luminescence due to the presence of gold NPs. The emission at 614 nm, due to the Eu³⁺ hypersensitive transition ⁵D₀-⁷F₂, is much influenced by the gold NPs and increases by ≈100% for samples heat-treated at 350 °C during 41 h.     

Spectroscopic characteristics of anionic centers in α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> crystals bombarded by Cu<Superscript>+</Superscript> and Ti<Superscript>+</Superscript> ions

We have studied the effect of bombardment by Cu⁺ and Ti⁺ ions with energy 30 keV on the optical absorption and luminescence of F centers in oxygen-deficient aluminum oxide. We have shown that in the induced optical absorption spectra there are six components of gaussian shape, which can be assigned to absorption bands of F⁺, F², and F₂⁺ centers. We have established that bombardment of the samples by ion beams has a weak effect on the thermoluminescence parameters in the 3.0 eV and 2.4 eV bands, while in the 3.8 eV luminescence band for F⁺ centers, the thermoluminescent response increases considerably. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 422–424, May–June, 2008.     

Mechanism of <Emphasis Type="Italic">F</Emphasis>-center luminescence in anion-defective aluminum oxide single crystals

New experimental data illustrating the effect of deep traps on the luminescence properties of anion-defective α-Al₂O₃ single crystals are presented. It was established that deep traps have electronic nature and their filling occurs through photoionization of F centers and is accompanied by F → F⁺-center conversion. Model concepts were developed that describe the luminescence mechanism in anion-defective aluminum oxide single crystals with inclusion of thermal ionization of the excited F-center states. The validity of the model was supported by experimental data obtained in a study of thermoluminescence, thermally stimulated exoelectron emission, and thermally stimulated electrical conductivity.     

Ion beam induced luminescence studies of LiAlO2 using negative ions

Lithium aluminate (LiAlO₂) is the candidate material for solid tritium breeder applied in the developing fusion reactors. The research of its defect behavior under ion irradiation was proceeded in the negative ions induced luminescence setup of the GIC4117 Tandem accelerator in Beijing Normal University. The ion beam induced luminescence (IBIL) measurement was performed by 20 keV H⁻ ions at room temperature. The luminescence spectra showed seven emission bands: the 4.55 eV may due to a self-trapped exciton (STE), the 4.06 eV and the 1.72 eV may due to impurity or intrinsic defect, the 3.54 eV due to F center, the 3.20 eV due to F⁺ center, the 2.93 eV due to F₂ center, the 2.30 eV due to F-center aggregates (F_n center), respectively. The intensity evolutions of each band with fluence were presented and the corresponding mechanisms were discussed.     

UV cathodoluminescence of crystalline α-quartz at low temperatures

Two luminescence bands in the UV range were detected in crystalline α-quartz under electron beam excitation (6 kV, 3-5 μA). One band is situated at 5 eV and could be observed in pure samples. Its intensity increases with cooling below 100 K and undergoes saturation below 40 K alongside a slow growth with the time of irradiation at 9 K. The decay curve of the band at 5 eV contains two components, a fast (<10 ns) and a slow one in the range of 200 μs. The photoluminescence band at 5 eV with a similar temperature dependence was found in previously neutron-irradiated crystalline α-quartz. Therefore, the band at 5 eV was attributed to host material defects in both irradiation cases. The creation mechanism of such defects by electrons, the energy of which is lower than the threshold for a knock-out mechanism of defect creation, is discussed. Another band at 6 eV, containing subbands in different samples, appears in the samples containing aluminum, lithium and sodium ions. This luminescence is ascribed to a tunnel radiative transition in an association of (alkali atom)⁰-[AlO₄]⁺ that is formed after the trapping of an electron and a hole by Li⁺ (or Na⁺) and AlO₄.     

Time-resolved spectroscopy of natural and synthetic BeO crystals

The results of comparative luminescence investigation of natural and synthetic BeO crystals are presented. Time-resolved luminescence (2.5–8 eV) and luminescence excitation spectra, and the kinetics of glow decay were measured using ultraviolet-vacuum-ultraviolet (VUV) synchrotron radiation (5–22 eV) or x-radiation (50–620 eV or 3–62 keV) ranges. X-ray and thermostimulated luminescence of natural BeO crystals were compared to the glow of additively colored synthetic crystals. The characteristic luminescence of F and F ⁺ centers was found in natural crystals. In synthetic crystals similar luminescence is observed only after additive or radiation coloration by virtue of the creation of F ⁻ and F ⁺ centers on anion vacancies. The defects found in the crystal lattice of a natural BeO crystal testify to the degree of mineral metamictization of the given deposit.     

Luminescence study of alumina nanopowders prepared by various methods

Mixed nanopowders of transition alumina prepared by combustion synthesis and phase pure ultra-porous α-alumina by oxidation method were investigated using low temperature time-resolved cathodoluminescence and photoluminescence spectroscopy under VUV-XUV excitation. In all samples along with the 7.6 eV emission of self-trapped excitons of α-alumina, luminescence bands due to F, F⁺ centres with maxima at 3 and 3.8 eV and other UV–visible luminescence bands of intrinsic and extrinsic origin with varying intensity depending on sample preparation method and thermal treatment were studied. In alumina nanopowders the excitonic excitation peak at ∼9.1 eV near fundamental absorption edge is shifted to the higher energies by 0.15 eV in comparison with the same feature in single crystals. The nanostructure of alumina is responsible for this shift.     

Identification of F+ centers in hafnia and zirconia nanopowders

Luminescence properties of undoped hafnia and zirconia nanopowders prepared by solution combustion synthesis were investigated under photo- and electron-beam excitation in 10–400 K temperature range. Along with the main luminescence band revealed in investigated materials at low temperatures at 4.2–4.3 eV and ascribed to the emission of self-trapped excitons, there are luminescence bands due to defects and impurities introduced during sample preparation. At room temperature the latter emissions dominate in the luminescence spectra as the intrinsic self-trapped exciton emission is quenched. Analysis of decay kinetics of defect centers allowed identification of F⁺ centers emission at 2.8 eV with lifetimes ∼3–6 ns in hafnia and zirconia under intra-center excitation.     

Luminescence spectroscopy of the Bi single and dimer centers in Y3Al5O12:Bi single crystalline films

Luminescence of the Bi³⁺ single and dimer centers in UV and visible ranges is studied in YAG:Bi (0.13 and 0.27 at% of Bi, respectively) single crystalline films (SCFs), grown by liquid phase epitaxy from a Bi₂O₃ flux. The cathodoluminescence spectra, photoluminescence decays, and time-resolved spectra are measured under the excitation by accelerated electrons and synchrotron radiation with energies of 3.7 and 12 eV, respectively. The energy level structure of the Bi³⁺ single and dimer centers was determined. The UV luminescence of YAG:Bi SCF in the bands that peaked at 4.045 and 3.995 eV at 300 K is caused by radiative transitions of Bi³⁺ single and dimer centers, respectively. The excitation spectra of UV luminescence of Bi³⁺ single and dimer centers consist of two dominant bands, peaked at 4.7/4.315 and 5.7/6.15 eV, related to the ¹S₀→³P₁ (A band) and ¹S₀→ ¹P₁ (C-band) transitions of Bi³⁺ ions, respectively. The excitation bands that peaked at 7.0 and 7.09 eV are ascribed to excitons bound with the Bi³⁺ single and dimer centers, respectively. The visible luminescence of YAG:Bi SCF presents superposition of several wide emission bands peaking within the 3.125-2.57 eV range and is ascribed to different types of excitons localized around the Bi³⁺ single and dimer centers. Apart from the above mentioned A and C bands the excitation spectra of visible luminescence contain wide bands at 5.25, 5.93, and 6.85 eV ascribed to the O²⁻→Bi³⁺ and Bi³⁺→Bi⁴⁺ + e charge transfer transition (CTT) in Bi³⁺ single and dimer centers. The observed significant differences in the decay kinetics of visible luminescence under excitation in A and C bands of Bi³⁺ ions, CTT bands, and in the exciton and interband transitions confirm the radiative decay of different types of excitons localized around Bi³⁺ ions in the single and dimer centers.     

Synthesis and Sm/Sm doping effects on photoluminescence properties of Sr4Al14O25

Complete and partial samarium reduction was achieved under strong reducing atmosphere by solid-state and combustion synthesis of Sr_3.96Sm_0.04Al₁₄O₂₅. Dependence of different fluxing agents on the formation of various strontium aluminates was examined. The samples were investigated by X-ray powder diffraction, temperature dependent luminescence decay and photoluminescence measurements. Excitation with UV radiation resulted in sharp and well resolved emission lines of samarium ions. Distinct temperature behavior for Sm²⁺ and Sm³⁺ were detected in the range of 100-500 K. Estimated emission thermal quenching values (TQ_1/2) for divalent samarium were approximately 270 K while for trivalent state around 660 K. Measured luminescence decay values of Sm²⁺ are substantially lower than for Sm³⁺,≈1.7 and ≈2.7 ms, respectively. The spectral feature of Sm²⁺ emission spectrum indicates that dopant occupies low symmetry site in Sr₄Al₁₄O₂₅ compound.     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.     

Luminescence and defects creation under photoexcitation of CsI : Tl crystals in Tl-related absorption bands

Characteristics of the defects created at 4.2 K by the UV-irradiation of CsI : Tl crystals in the Tl⁺-related absorption bands (by photons of 5.8-4.8 eV energy) have been studied. The dependences of the intensities of the thermally stimulated luminescence peaks appearing near 60, 90 and 125 K and of the recombination luminescence photostimulation bands peaking at 2.35, 1.92, 1.33 and 0.89 eV on the irradiation energy and duration, uniaxial stress and thallium concentration have been examined. The mechanisms of the processes, responsible for the appearance of the intense visible (2.55 and 2.25 eV) luminescence of excitons localized near Tl⁺ ions and creation of defects pairs of the type of Tl⁰-V_K and Tl⁺-V_K with various distances between the components, have been discussed.     

Photoluminescence of Cu-doped and Cu-doped ZnS nanocrystallites

ZnS:Cu⁺ and ZnS:Cu²⁺ nanocrystallites have been obtained by chemical precipitation from homogeneous solutions of zinc, copper salt compounds, with S²⁻ as precipitating anion formed by decomposition of thioacetamide. X-ray diffraction (XRD) analysis shows that average diameter of particles is about 2.0-2.5 nm. The nanoparticles can be doped with copper during synthesis without altering XRD pattern. However, the emission spectrum of ZnS nanocrystallites doped with Cu⁺ and Cu²⁺ consists of two emission peaks. One is at 450 nm and the other is at 530 nm. The absorptive spectrum of the doped sample is different from that of un-doped ZnS nanoparticles. Because the emission process of the Cu⁺ luminescence center in ZnS nanocrystallites is remarkably different from that of the Cu²⁺ luminescence center, the emission spectra of Cu⁺-doped samples are different from those of Cu²⁺-doped samples.     

Temperature dependence of the luminescence of nanocrystalline CdS/Mn

The temperature dependence of the luminescence properties of nanocrystalline CdS/Mn²⁺ particles is investigated. In addition to an orange Mn²⁺ emission around 585 nm a red defect related emission around 700 nm is observed. The temperature quenching of both emissions is similar (T_q≈100 K). For the defect emission the reduction in the lifetime follows the temperature dependence of the intensity. For the Mn²⁺ emission however, the intensity decreases more rapidly than the lifetime with increasing temperature. To explain these observations a model is proposed in which the Mn²⁺ ions are excited via an intermediate state involving shallowly trapped (≈40 meV) charge carriers.     

D3→FJ emission of Tb doped sol–gel silica

Amorphous silica samples doped with 0.1 and 1 mol% of terbium (Tb) were synthesized by the sol–gel method. In addition to the green light associated with ⁵D₄→⁷F_J transitions of Tb³⁺, the sample containing 0.1 mol% also emitted blue light as a result of ⁵D₃→⁷F_J transitions during photoluminescence (PL) measurements. As a result of concentration quenching this blue emission was not observed for the samples doped with the higher concentration (1 mol%). However the blue ⁵D₃ →⁷F_J emission was observed in the 1 mol% doped samples during cathodoluminescence (CL) measurements. Since a rough calculation indicated that the excitation rate in the CL system where the blue emission is observed may be similar to a laser PL system under conditions where the blue emission is not observed, the difference is attributed to the nature of the excitation sources. It is suggested that during the CL excitation incident electrons can reduce non-luminescent Tb⁴⁺ ions in the silica, substituting for Si⁴⁺ ions, to the excited (Tb³⁺)? state and that these are responsible for the blue emission, which does not occur during PL excitation.     

Luminescent properties of R doped Sr2SiO4:Eu(R=Li, Na and K) red-emitting phosphors for white LEDs

Sr₂SiO₄:Eu³⁺ and Sr₂SiO₄:Eu³⁺ doped with R⁺(R⁺=Li⁺, Na⁺ and K⁺) phosphors were prepared by conventional solid-state reaction and investigated by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy. XRD patterns and SEM reveal that the optimal firing condition for Sr₂SiO₄:Eu³⁺ was 1300 °C for 4 h. The excitation and emission spectra indicate that the phosphor can be effectively excited by ultraviolet (395 nm) and blue (466 nm) light and emits intense red light peaked at around 614 nm corresponding to the ⁵D₀→⁷F₂ transitions of Eu³⁺. In the research work, the effect of R⁺ contents on luminescence property and the Eu³⁺ concentration quenching process have also been investigated. The Eu³⁺ concentration quenching mechanism was verified to be a multipole-multipole interaction and the critical energy-transfer distance was calculated to be around 14.6 Å. The dopant R⁺(R⁺=Li⁺, Na⁺ and K⁺) as charge compensator in Sr₂SiO₄:Eu³⁺ can further enhance luminescence intensity, and the emission intensity of Sr₂SiO₄:Eu³⁺ doping Li⁺ is higher than that of Na⁺ or K⁺.     

Spectral performance and intensive green upconversion luminescence in Er/Yb-codoped NaY(WO4)2 crystal

Using Czochralski (CZ) pulling method, an Er³⁺/Yb³⁺-codoped NaY(WO₄)₂ crystal was prepared. Absorption spectra, emission spectra and excitation spectra of this crystal were measured at room temperature. Some optical parameters, such as intensity parameters, spontaneous emission probabilities and lifetimes, were calculated from absorption spectra with Judd-Ofelt (J-O) theory. Upconversion luminescence excited by a 970 nm diode laser was studied. In this crystal, green upconversion luminescence is particularly intensive. Energy transfer mechanisms that play an important role in upconversion processes were analyzed. Two cross-relaxation processes: ⁴G_11/2 + ⁴I_9/2 → ²H_11/2 (or ⁴S_3/2) + ²H_11/2 (or ⁴S_3/2), and ⁴G_11/2 + ⁴I_15/2 → ²H_11/2 (or ⁴S_3/2) + ²I_13/2, which contribute to the intensive green luminescence under 378 nm excitation, were put forward. Background energy transfer ⁴G_11/2(Er³⁺) + ²F_7/2(Yb³⁺) → ⁴F_9/2(Er³⁺) + ²F_5/2(Yb³⁺) was also demonstrated.