Structural and magnetic properties of evaporated Fe thin films on Si(1 1 1), Si(1 0 0) and glass substrates

We present experimental results on the structural and magnetic properties of series of Fe thin films evaporated onto Si(1 1 1), Si(1 0 0) and glass substrates. The Fe thickness, t, ranges from 6 to110 nm. X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to study the structure and surface morphology of these films. The magnetic properties were investigated by means of the Brillouin light scattering (BLS) and magnetic force microscopy (MFM) techniques. The Fe films grow with (1 1 0) texture; as t increases, this (1 1 0) texture becomes weaker for Fe/Si, while for Fe/glass, the texture changes from (1 1 0) to (2 1 1). Grains are larger in Fe/Si than in Fe/glass. The effective magnetization, 4πM_eff, inferred from BLS was found to be lower than the 4πM_S bulk value. Stress induced anisotropy might be in part responsible for this difference. MFM images reveal stripe domain structure for the 110 nm thick Fe/Si(1 0 0) only.     

Self-assembled monolayers of radical molecules physisorbed on HOPG(0 0 0 1) substrate studied by scanning tunnelling microscopy and electron paramagnetic resonance techniques

In this paper, we present a combined STM and EPR study on the adsorption and self-organization of monolayers formed from 2-(14-Carboxytetradecyl)-2-ethyl-4,4-dimethyl-3-oxazolidinyloxy (16DS) and 4′,4′-Dimethylspiro(5α-cholestane-3,2′-oxazolidin)-3′-yloxy (CSL) adsorbed on a highly oriented pyrolitic graphite HOPG(0 0 0 1) substrate. Both 16DS and CSL molecules are persistent free radicals containing a paramagnetic doxyl group. The STM measurements of 16DS on HOPG(0 0 0 1) were performed at the liquid-solid interface while the studies of CSL on HOPG(0 0 0 1) were carried out under ultrahigh vacuum conditions. It was found that the 16DS molecules on the HOPG(0 0 0 1) surface form a highly-ordered monolayer with a domain structure. The high-resolution STM images show structural details of 16DS molecules on HOPG(0 0 0 1) revealing the paramagnetic doxyl group. In contrast, CSL molecules on HOPG(0 0 0 1) form a well-ordered monolayer without domain structure. The EPR results indicate that both compounds deposited on HOPG(0 0 0 1) substrate are not reduced and retain their paramagnetic character. We believe that the molecular systems described can be used in single spin detection experiments using an electron spin noise-scanning tunnelling microscopy (ESN-STM) technique. In particular, the possibility of obtaining contrast spin signals from the paramagnetic and diamagnetic parts of molecules increases the significance of our results.     

New heteroleptic cyclometalated iridium(III) complexes containing 2-(2′,4′-difluorophenyl)-4-methylpyridine for organic light-emitting diode applications

Two phosphorescent iridium(III) complexes (dfpmpy)₂Ir(ppc) and (dfpmpy)₂Ir(prz) [dfpmpy=2-(2′,4′-difluorophenyl)-4-methylpyridine, ppc=pipecolinate, prz=2-pyrazine carboxylate] were synthesized from the reaction of the chloro-bridged dimeric complex [(dfpmpy)₂Ir(μ-Cl)]₂ and the ancillary ligand. Their structures and photoluminescence properties were investigated and device performances for application in organic light-emitting diodes (OLEDs) were studied. The complexes adopt a distorted, octahedral geometry around the iridium metal, exhibiting cis C-C and trans N-N arrangements. The photoluminescent (PL) properties reveal that (dfpmpy)₂Ir(ppc) emits in the blue-green region (λ_max=497 nm), whereas (dfpmpy)₂Ir(prz) shows red phosphorescence (λ_max=543 nm) in the film state (5% wt. doped in PMMA). The (dfpmpy)₂Ir(ppc)- and (dfpmpy)₂Ir(prz)-based OLEDs exhibited sky-blue and greenish-yellow electroluminescence with similar current-voltage characteristics, repectively. Maximum current efficiency of (dfpmpy)₂Ir(ppc) and (dfpmpy)₂Ir(prz) were 4.4 and 7.4 cd/A, respectively. Maximum luminance values were approximately 10,000 cd/m² for the both compounds.     

Spectroscopic study on the 4′-(4-pyridyl)-2,2′:6′,2′′-terpyridine and its metal complexes

Multitopic ligand, 4′-(4-pyridyl)-2,2′:6′,2″-terpyridine (pyterpy), has attracted growing attention because of its unique structural features, optical and electrochemical properties. Here, we report spectroscopic studies of pyterpy and its metal complexes in methanol solution. For the pure pyterpy, the ligand emission intensity increased with its concentration in the dilute solution, but decreased when its concentration was over 1.3×10⁻⁵ mol/l due to the concentration quenching. No significant influence on the ligand luminescence was observed for the Zn²⁺-pyterpy complex but strong luminescence quenching was observed for the electroactive Fe²⁺- and Co²⁺-pyterpy complexes. The lanthanide (Sm³⁺, Eu³⁺ and Tb³⁺) complexes of the pyterpy showed both ligand and lanthanide ion emissions, especially for the Tb³⁺-pyterpy complex, suggesting that the excited energy of pyterpy ligand could be efficiently transferred to the central Tb³⁺ ions. The luminescence was pH sensitive with the strongest emission in the neutral solution. The results indicated that the multitopic ligand of pyterpy could not only act as linkers for the metal-directed building blocks, but also act as optical materials with its own emission at about 364 nm and as light antenna for the lanthanide ions.     

VUV spectroscopic properties of Ce and Pr-doped AREP2O7-type alkali rare earth diphosphates (A=Na, K, Rb, Cs; RE=Y, Lu)

Spectroscopic properties of Ce³⁺ and Pr³⁺-doped AREP₂O₇-type alkali rare earth diphosphates (A=Na, K, Rb, Cs; RE=Y, Lu) have been investigated using VUV spectroscopy technique. Ce³⁺-doped samples show typical Ce³⁺ emission in the range of 325-450 nm. The strong host absorption band starting at around 160 nm indicates that the optical band gap of AREP₂O₇ hosts is at least 7.7 eV, and the host→Ce³⁺ energy transfer process is rather efficient. However, AREP₂O₇:Pr³⁺ samples show less efficient host→Pr³⁺ energy transfer. The direct Pr³⁺ 4f²→4f¹5d¹ excitation, which are 12160±640 cm⁻¹ higher respect to that of Ce³⁺, leads to strong 4f¹5d¹→4f² emission bands in the range of 230-325 nm but no obvious 4f²→4f² emission lines.     

Inhibition of copper corrosion by bis-(1,1′-benzotriazoly)-α,ω-diamide compounds in aerated sulfuric acid solution

Three kinds of novel corrosion inhibitors, bis-(1,1′-benzotriazoly)-α,ω-succinyldiamide (BSU), bis-(1,1′-benzotriazoly)-α,ω-adipoyldiamide (BAD), and bis-(1,1′-benzotriazoly)-α,ω-azelayldiamide (BAZ) were synthesized and certified by IR and ¹H NMR. Their corrosion inhibition effects for copper in 0.5 M H₂SO₄ were evaluated by weight-loss method. It shows that among the three compounds, only BSU behaves better compared with BTA. The inhibition efficiency (IE) increased with increasing BSU concentration to 85.2% at the 5 × 10⁻⁴ M level. Polarization studies showed that BSU suppressed both anodic and cathodic corrosion reactions. The minimum energy conformation of these compounds was obtained by MM2 force field program. The two benzotriazoly moieties in BSU molecule are more parallel than in other compounds. This is benefit to increase the inhibition effects of BSU.     

Photoluminescence studies of red-emitting NaEu(WO4)2 as a near-UV or blue convertible phosphor

Sodium europium double tungstate [NaEu(WO₄)₂] phosphor was prepared by the solid-state reaction method. Its crystal structure, photoluminescence properties and thermal quenching characteristics were investigated aiming at the potential application in the field of white light-emitting diodes (LEDs). The influences of Sm doping on the photoluminescence properties of this phosphor were also studied. It is found that this phosphor can be effectively excited by 394 or 464 nm light, which nicely match the output wavelengths of near-ultraviolet (UV) or blue LED chips. Under 394 or 464 nm light excitation, this phosphor exhibits stronger emission intensity than the Y₂O₂S:Eu³⁺ or Eu²⁺-activated sulfide phosphor. The introduction of Sm³⁺ ions can broaden the excitation peaks at 394 and 464 nm of the NaEu(WO₄)₂ phosphor and significantly enhance its relative luminance under 400 and 460 nm LEDs excitation. Furthermore, the relative luminance of NaEu(WO₄)₂ phosphor shows a superior thermal stability compared with the commercially used sulfide or oxysulfide phosphor, and make it a promising red phosphor for solid-state lighting devices based on near-UV or blue LED chips.     

Influence of cetyltrimethylammonium bromide on the morphology of AWO4 (A = Ca, Sr) prepared by cyclic microwave irradiation

AWO₄ (A = Ca, Sr) was prepared from metal salts [Ca(NO₃)₂·4H₂O or Sr(NO₃)₂], Na₂WO₄·2H₂O and different moles of cetyltrimethylammonium bromide (CTAB) in water by cyclic microwave irradiation. The structure of AWO₄ was characterized by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) revealed the presence of nanoparticles in clusters with different morphologies; spheres, peaches with notches, dumb-bells and bundles, influenced by CTAB. Six Raman vibrational peaks of scheelite structure were detected at 908, 835, 793, 399, 332 and 210 cm⁻¹ for CaWO₄ and 917, 833, 795, 372, 336 and 192 cm⁻¹ for SrWO₄, which are assigned as ν₁(A_g), ν₃(B_g), ν₃(E_g), ν₄(B_g), ν₂(A_g) and ν_f.r.(A_g), respectively. Fourier transform infrared (FTIR) spectra provided the evidence of W-O stretching vibration in [WO₄]²⁻ tetrahedrons at 793 cm⁻¹ for CaWO₄ and 807 cm⁻¹ for SrWO₄. The peaks of photoluminescence (PL) spectra were at 428-434 nm for CaWO₄, and 447-451 nm for SrWO₄.     

Surface electronic structure of the (3 × 2) reconstruction induced by Yb on a Si(1 1 1) surface

We have investigated the electronic structure of the Yb/Si(1 1 1)-(3 × 2) surface using angle-resolved photoelectron spectroscopy. Five surface states have been identified in the gap of the bulk band projection. Among these five surface state, the dispersions of three of them agree well with those of the surface states of monovalent atom adsorbed Si(1 1 1)-(3 × 1) surfaces. The dispersions of the two other surface states agree well with those observed on the Ca/Si(1 1 1)-(3 × 2) surface, whose basic structure is the same as that of monovalent atom adsorbed Si(1 1 1)-(3 × 1) surfaces. Taking these results into account, we conclude that the five surface states observed in the band gap originate from the orbitals of Si atoms that form a honeycomb-chain-channel structure.     

A luminescent dinuclear Eu(III) complex based on 2,8-bis(4′,4′,4′,-trifluoro-1′,3′-dioxobutyl)-dibenzothiophene for light-emitting diodes

A dinuclear Eu (III) complex Eu₂(dbt)₃·4H₂O was synthesized, where H₂dbt was 2,8-bis(4′,4′,4′,-trifluoro-1′,3′-dioxobutyl)-dibenzothiophene. The complex emits the characteristic red luminescence of Eu³⁺ ion due to the ⁵D₀→⁷F_J(J=0-4) transitions under 395 nm-light excitation with a luminescent quantum efficiency of 17%. The complex is thermally stable up to 280 °C. It was found that the complex can be effectively excited by a 395 nm-emitting InGaN chip. Bright red light was obtained using the complex as light color-conversion material.     

Photoluminescence and electroluminescence of a novel green-yellow emitting material-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl]-pyrazine-2,3-dicarbonitrile

A new compound with intramolecular charge transfer (ICT) property—5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl]-pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both “positive” and “negative” solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N′-diphenyl-N,N′-bis-(3-methylphenyl) (1,1′-diphenyl)4,4′-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m² at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m² at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m² at 4.5 V, a maximum brightness of 12600 cd/m² at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A.     

Structural studies of evaporated CoxCr1−x/Si (1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si (1 0 0) and glass substrates. Chemical composition and interface properties have been studied by modelling Rutherford backscattering spectra (RBS) using SIMNRA programme. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Simulation of the energy spectra shows an interdiffusion profile in the thickest films, but no diffusion is seen in thinner ones. Microscopic characterizations of the films are done with X-ray diffraction (XRD) measurements. All the samples are polycrystalline, with an hcp structure and show a 〈0 0 0 1〉 preferred orientation. Atomic force microscopies (AFM) reveal very smooth film surfaces.     

Work function of sol-gel indium tin oxide (ITO) films on glass

Indium tin oxide (ITO) films (physical thickness, 250-560 ± 25 nm) were deposited on soda lime silica (SLS) glass and silica layer coated (∼200 nm physical thickness) SLS glass substrates by sol-gel technique using alcohol based precursors containing different In:Sn atomic percentages, namely, 90:10, 70:30, 50:50, 30:70. Cubic phase of In₂O₃ was observed up to 50 at.% Sn while cassiterite SnO₂ phase was observed for 70 at.% Sn. Work function of the films was evaluated from inelastic secondary electron cutoff of ultraviolet photoelectron spectroscopy (UPS) energy distribution curve (EDC) obtained under two experimental conditions (i) as-introduced (ii) after the cleaning of the surface by sputtering. Elemental distribution and the presence of oxygen containing contaminant and carbon contaminant of the samples were done by XPS analysis under same conditions. The work function changed little due to the presence of surface contaminants. It was in the range, 3.9-4.2 eV (±0.1 eV).     

Multiphoton ultraviolet and visible upconversion luminescence of TmYb co-doped oxyfluoride glass

The ultraviolet upconversion luminescence of Tm³⁺ ions sensitized by Yb³⁺ ions in oxyfluoride glass when excited by a 975 nm diode laser was studied in this paper. One typical ultraviolet upconversion luminescence lines positioned at 362.3 nm was found. It can be attributed to the five-photon upconversion luminescence transition of ¹D₂ → ³H₆. Several visible upconversion luminescence lines at 451.1 nm, (477.9 nm, 462.5 nm), 648.7 nm, (680.5 nm, 699.5 nm) and (777.5 nm, 800.7 nm) were found also, which results from the fluorescence transitions of five-photon ¹D₂ → ³F₄, three-photon ¹G₄ → ³H₆, three-photon ¹G₄ → ³F₄, two-photon ³F₃ → ³H₆ and two-photon ³H₄ → ³H₆ of Tm³⁺ ion, respectively. The theoretical analysis suggests that the upconversion mechanism of the 362.3 nm ¹D₂ → ³H₆ upconversion luminescence is the cross energy transfer of {³H₄(Tm³⁺) → ³F₄(Tm³⁺), ¹G₄(Tm³⁺) → ¹D₂(Tm³⁺)} and {¹G₄(Tm³⁺) → ³F₄(Tm³⁺), ³H₄(Tm³⁺) → ¹D₂(Tm³⁺)} between Tm³⁺ ions. In addition, the upconversion luminescence of ¹G₄ and ³H₄ state results from the sequential energy transfer {²F_5/2(Yb³⁺) → ²F_7/2(Yb³⁺), ³H₄(Tm³⁺) → ¹G₄(Tm³⁺)} and {²F_5/2(Yb³⁺) → ²F_7/2(Yb³⁺), ³F₄(Tm³⁺) → ³F₂(Tm³⁺)} from Yb³⁺ ions to Tm³⁺ions, respectively.     

Spectroscopic investigations of Nd-, Er-, Er/Yb-, and Tm-ions doped SiO2-Al2O3-CaF2-GdF3 glasses

This paper reports on the absorption, visible and near-infrared luminescence properties of Nd³⁺, Er³⁺, Er³⁺/2Yb³⁺, and Tm³⁺ doped oxyfluoride aluminosilicate glasses. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω₂, Ω₄ and Ω₆) have been calculated for all the studied ions. Decay lifetime curves were measured for the visible emissions of Er³⁺ (558 nm, green), and Tm³⁺ (650 and 795 nm), respectively. The near infrared emission spectrum of Nd³⁺ doped glass has shown full width at half maximum (FWHM) around 45 nm (for the ⁴F_3/2→⁴I_9/2 transition), 45 nm (for the ⁴F_3/2→⁴I_11/2 transition), and 60 nm (for the ⁴F_3/2→⁴I_13/2 transition), respectively, with 800 nm laser diode (LD) excitation. For Er³⁺, and Er³⁺/2Yb³⁺ co-doped glasses, the characteristic near infrared emission bands were spectrally centered at 1532 and 1544 nm, respectively, with 980 nm laser diode excitation, exhibiting full width at half maximum around 50 and 90 nm for the erbium ⁴I_13/2→⁴I_15/2 transition. The measured maximum decay times of ⁴I_13/2→⁴I_15/2 transition (at wavelength 1532 and 1544 nm) are about 5.280 and 5.719 ms for 1Er³⁺ and 1Er³⁺/2Yb³⁺ (mol%) co-doped glasses, respectively. The maximum stimulated emission cross sections for ⁴I_13/2→⁴I_15/2 transition of Er³⁺ and Er³⁺/Yb³⁺ are 10.81×10⁻²¹ and 5.723×10^-21 cm². These glasses with better thermal stability, bright visible emissions and broad near-infrared emissions should have potential applications in broadly tunable laser sources, interesting optical luminescent materials and broadband optical amplification at low-loss telecommunication windows.     

Electroluminescent properties of dimeric bis(2-(2′-hydroxyl phenyl)benzthiazolate)zinc (II) complex

A blue shifted photoluminescent emission in bis(2-(2′-hydroxyl phenyl)benzthiazolate)zinc (II) complex, ZBZT, arises out of the dimeric structure, typical of the localized electron density around the non-bridged ligand in the excited state of the complex. An average decay lifetime of 4.8 and 3.0 ns for the ligand and the complex, respectively indicates an energy transfer from the ligand to the metal. A PL quantum efficiency of about ?_ZBZT=0.45 in DMF solution is observed, in comparison to the Alq₃, complex, ?_Alq3=0.116. Semi empirical ZINDO/S-SCF-CI calculations support the dominance of non-bridged ligand moiety in controlling the photoluminescent properties. An unusually broad white light (FWHM ∼220 nm) electroluminescent emission in the two layer device structure brings out the features of an exciplex formation between the active layer ZBZT/TPD interface, which is studied at different current densities. Such a broadened emission is verified for different thicknesses of the active layer substantiating the role of exciplex formation.     

Structure and luminescence studies of tris(nitrato-O,O′)bis(2,2′-bipyridyl-N,N′)dysprosium(III) complex

The title compound, [Dy(NO₃)₃(bipy)₂], is isostructural with the La, Pr, Nd, Eu and Lu analogues where bipy=2, 2′-bipyridyl. The Dy complex was crystallized in orthorhombic with space group Pbcn. The Dy(III) ion was coordinated with the two bipy ligands and three nitrate anions giving a ten coordination number. Measurements of the molar conductance in ethanol and water solutions indicate that the complex is non-electrolyte. A comparative study of the emission of [Dy(NO₃)₃(bipy)₂] complex with those of the adduct mixture of bipy and Dy at a 1:1 ratio, has been investigated. In the solid state, photoluminescence (PL) spectrum of the complex had sharp emission bands corresponding to the ⁴F_9/2→⁶H_15/2 (476.5 and 482 nm), ⁴F_9/2→⁶H_13/2(572.6 and 573.8 nm), ⁴F_9/2→⁶H_11/2 (661.6 nm) and ⁴H_3/2→⁶H_15/2 (961.0 nm) transitions. The hypersensitive peak of the complex has the yellow emission stronger than the blue emission in the solid state as well as in the solution. The complex has a good thermal stability due to the role of π-π interactions stacking.     

Synthesis and luminescence investigation of RE (Eu, Tb and Ce)-doped lithium silicate (Li2SiO3)

Synthesis and photoluminescence (PL) investigations of lithium metasilicate doped with Eu³⁺, Tb³⁺ and Ce³⁺ were carried out. PL spectra of Eu-doped sample showed peaks corresponding to the ⁵D₀→⁷F_j (j=1, 2, 3 and 4) transitions under ultraviolet excitation. Strong red emission coming from the hypersensitive ⁵D₀→⁷F₂ transition of Eu³⁺ ion suggested the presence of the dopant ion in structurally disordered environment. Tb³⁺-doped silicate sample showed blue-green emission corresponding to the ⁵D₄→⁷F_j (j=6, 5 and 4) transitions. Ce-doped sample under excitation from UV, showed a broad emission band in the region 350-370 nm with shoulders around 410 nm. The fluorescence lifetimes of Eu³⁺ and Tb³⁺ ions were found out to be 790 and 600 μs, respectively. For Ce³⁺, the lifetime was of the order of 45 ns. PL spectra of the europium- and terbium-doped samples were compared with commercial red (Y₂O₃:Eu³⁺) and green (LaPO₄:Tb³⁺) phosphors, respectively. It was found that the emission from the doped silicate sample was 37% of the commercial phosphor in case of the Tb-doped sample and 8% of the commercial phosphor in case of the Eu-doped sample.     

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Utilizing BCl₃ reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH₄ reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH₄ reaction. It is also found that Si atom amount deposited by SiH₄ reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.     

Spectroscopic characteristic and energy levels of Cr in Cr:KAl(MoO4)2 crystal

This paper reports polarized spectral properties and energy levels of Cr³⁺ in KAl(MoO₄)₂ crystal. The absorption and emission cross sections are estimated as 3.72×10^-20 cm² at 669 nm and 2.74×10^-20 cm^-2 at 823 nm for σ-polarization, respectively. The energy levels of Cr³⁺ ion in KAl(MoO₄)₂ crystal were calculated based on the Tanabe-Sugano theory. It is suggested that Cr³⁺ ions occupy at an intermediate crystal field site in Cr³⁺:KAl(MoO₄)₂.