High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

In this paper,high temperature direct current(DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V(far from Dirac point),the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of +8 V(near Dirac point).The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.     

Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation

A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5~min, the radiation intensity increases to 5.1~μ W/cm², while the saturation drain current (I_\rm dss) of the nanowire FET decreases sharply from 560 to 320~nA. The field effect mobility (μ ) of the ZnO nanowire FET drops from 50.17 to 23.82~cm²/(V.s) at V_\rm DS=2.5~V, and the channel resistivity of the FET increases by a factor of 2. On the other hand, when the radiation intensity is 2.5~μ W/cm^2 , the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20~min are almost the same); in particular, the I_\rm dss of NW FET only reduces by about 50~nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.     

Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors

We introduce a room temperature and solution-processible vanadium oxide (VO_x) buffer layer beneath Au source/drain electrodes for bottom-contact (BC) organic field-effect transistors (OFETs). The OFETs with the VO_x buffer layer exhibited higher mobility and lower threshold voltages than the devices without a buffer layer. The hole mobility with VO_x was over 0.11 cm²/V with the BC geometry with a short channel length (10 μm), even without a surface treatment on SiO₂. The channel width normalized contact resistance was decreased from 98 kΩ cm to 23 kΩ cm with VO_x. The improved mobility and the reduced contact resistance were attributed to the enhanced continuity of pentacene grains, and the increased work function and adhesion of the Au electrodes using the VO_x buffer layer.     

Physics,and transistors in computers

The spectacular success of the transistor in making a steady stream of increasingly powerful and affordable digital computers available through the 50 years since its invention is well known. Yet in spite of this remarkable record the same fifty years has witnessed a continuing series of proposals for replacing the transistor in computing systems with some other device. The tunnel diode and Josephson devices are notable examples. Some of these proposals have attracted many millions of pounds of industry and government support. Yet none has had any effect on computing technology. The problem of the many alternatives is that they do not use quantitative standard signals to represent digits; in other words, they are not truly digital.     

A comparison of the transport properties of bilayer graphene,monolayer graphene,and two-dimensional electron gas

We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors (the two-dimensional electron gas (2DEG)). It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.     

Ti-doped nano-porous graphene: A material for hydrogen storage and sensor

Clustering of Ti on carbon nanostructures has proved to be an obstacle in their use as hydrogen storagematerials. Using density functional theory we show that Ti atoms will not cluster at moderate concentrations when doped into nanoporous graphene. Since each Ti atom can bind up to three hydrogen molecules with an average binding energy of 0.54 eV/H₂, this material can be ideal for storing hydrogen under ambient thermodynamic conditions. In addition, nanoporous graphene is magnetic with or without Ti doping, but when it is fully saturated with hydrogen, the magnetism disappears. This novel feature suggests that nanoporous graphene cannot only be used for storing hydrogen, but also as a hydrogen sensor.     

Composite coatings of polyamide/graphene: microstructure,mechanical, thermal,and barrier properties

This effort reports on novel fluorinated polyamide (FPA) and polyamide 1010 (PA1010)-based blends and graphene reinforced nanocomposite. PA1010/FPA (80:20) blend was opted as matrix material on the basis of molecular weight, thermal, and shear stress performance. Graphene was obtained through in situ chemical method of graphene oxide reduction. PA1010/FPA/Graphene nanocomposites was developed using various graphene loadings (up to 5 wt.%). Thin film coatings were prepared on glass substrate. Consequently, the PA1010/FPA/Graphene attained regular spongy morphological pattern. PA1010/FPA/Graphene 3 also showed improved T₀ and T_max of 534 and 591 °C relative to the neat blend (T₁₀ 423 °C; T_max 551 °C). Limiting oxygen index measurement indicated better non-flammability of PA1010/FPA/Graphene 1–3 nanocomposite series (57–60%) relative to the blend series (28–31%). UL94 tests also showed V-0 rating for nanocomposites. Furthermore, PA1010/FPA/Graphene 3 nanocomposite revealed significantly high tensile strength (62 MPa), flexural modulus (1690 MPa), and adhesive properties to be utilized as coating materials. The nanocomposite coatings also displayed outstanding barrier properties against O₂ and H₂O compared with neat blends.     

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.     

氢气浸泡辐照加速方法在3DG111器件上的应用及辐射损伤机理分析

本文以~(60)Co为辐照源,针对3DG111型晶体管,利用半导体参数分析仪和深能级缺陷瞬态谱仪,研究高/低剂量率和有/无氢气浸泡条件下,电性能和深能级缺陷的演化规律.试验结果表明,与高剂量率辐照相比,低剂量率辐照条件下,3DG111型晶体管的电流增益退化更加严重,这说明该器件出现了明显的低剂量率增强效应;无论是高剂量率还是低剂量率辐照条件下,3DG111晶体管的辐射损伤缺陷均是氧化物正电荷和界面态陷阱,并且低剂量率条件下,缺陷能级较深;氢气浸泡后在高剂量率辐照条件下,与未进行氢气处理的器件相比,辐射损伤程度明显加剧,且与低剂量率辐照条件下器件的损伤程度相同,缺陷数量、种类及能级也相同.因此,氢气浸泡处理可以作为低剂量率辐射损伤增强效应加速评估方法的有效手段.     

Investigation of the interface between polyethylene and functionalized graphene: A computer simulation study

The effect of surface chemical functionalization of a single graphene layer on its thermodynamic work of adhesion (WA) with polyethylene (PE) chains has been investigated using molecular dynamics (MD) simulation. For this purpose, amine (NH₂), carboxyl (COOH), hydroxyl (OH), and methyl (CH₃) functional groups were distributed randomly throughout the graphene surface using a Monte Carlo (MC) algorithm to achieve graphene functionalized structures with minimized potential energies. The MD simulation results showed that the thermodynamic WA between the PE and the functionalized graphene was larger than that between the PE and the pristine graphene. In fact, the electronegativity of functional groups and Van der Waals forces play influential roles in the thermodynamic WA between the PE and the functionalized graphene. In addition, the amount of thermodynamic WA was increased with increasing the functional group surface density, except for the graphene functionalized with the methyl groups. The segmental density of the PE chains near the single sheet surface was determined based on the density profile calculation. The polymer segments exhibited strong ordering and sharp density variations near the PE/graphene interface. The dynamic of chains was quantitatively characterized by calculating mean square displacement (MSD). Furthermore, the influence of functionality on the glass transition temperature (T_g) of the PE at the PE/graphene interface region was investigated. The results showed that the T_g at the PE/graphene interface was much higher than that of the bulk polymer. In fact, the functionalization of the graphene surface seems to considerably enhance the T_g of the polymer due to lowering the chains mobility.     

Negative and positive magnetoresistance in bilayer graphene: Effects of weak localization and charge inhomogeneity

We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL), universal conductance fluctuations (UCF), and inhomogeneous charge transport. A clear WL signal is evident at all measured gate voltages (in the hole doped regime) and temperature ranges (from 0.25 to 4.3 K), and the phase coherence length extracted from the WL data does not saturate at low temperatures. The WL data is fit to demonstrate that the electron-electron Nyquist scattering is the major source of phase decoherence. A decrease in UCF amplitude with increase in gate voltage and temperature is shown to be consistent with a corresponding decrease in the phase coherence length. In addition, a weak positive magnetoresistance at higher magnetic fields is observed, and attributed to inhomogeneous charge transport.     

Immobilization of redox mediators on functionalized carbon nanotube: A material for chemical sensor fabrication and amperometric determination of hydrogen peroxide

Chemical functionalization of single-walled carbon nanotubes with redox mediators, namely, toluidine blue and thionin have been carried out and the performance of graphite electrode modified with functionalized carbon nanotubes is described. Mechanical immobilization of functionalized single-walled nanotube (SWNT) on graphite electrode was achieved by gently rubbing the electrode surface on carbon nanotubes supported on a glass slide. The electrochemical behaviour of the modified electrodes was investigated by cyclic voltammetry. The SWNT-modified electrodes showed excellent electrocatalytic effect for the reduction of hydrogen peroxide. A decrease in overvoltage was observed as well as an enhanced peak current compared to a bare graphite electrode for the reduction of hydrogen peroxide. The catalytic current was found to be directly proportional to the amount of hydrogen peroxide taken.     

A comparative investigation of an AB- and AA-stacked bilayer graphene sheet under an applied electric field: A density functional theory study

An AB- and AA-stacked bilayer graphene sheet(BLG) under an electric field is investigated by ab initio calculation.The interlayer distance between the two layers,band structures,and atomic charges of the system are investigated in the presence of different electric fields normal to the BLG.The AB- stacked BLG is able to tune the bandgap into 0.234 eV with the increase of the external electronic field to 1 V/nm,however,the AA-stacked BLG is not sensitive to the external electric field.In both the cases,the spacing between the BLG slightly change in terms of the electric field.The charges in the AB- stacked BLG are increased with the increase of the electric field,which is considered to be the reason that causes the bandgap opening in the AB- stacked BLG.     

Mechanics and morphology of single-walled carbon nanotubes: from graphene to the elastica

Abstract

The elastica is referred to the shape of the curve into which the centreline of a flexible lamina is bent. Hence, single-walled carbon nanotubes (SWCNTs) are treated as the elastica obtained from bending of graphene. The corresponding large deformation accompanies both the material and geometrical non-linearities. The morphology of the free-standing SWCNTs such as the natural angle of twist, bond lengths, tube radius and wall thickness are determined. Moreover, it is shown that the induced self-equilibriated strain field has a remarkable impact on the mechanical behaviour of the nanotube. Utilization of an appropriate non-linear continuum constitutive relation for graphene leads to exact formulation of the governing equations of SWCNTs. Subsequently, through perturbation analysis, the asymptotic solutions of the initial elastic fields for the SWCNTs are presented. By performing ab initio calculations, the components of the fourth and sixth-order elastic moduli tensors in the constitutive model of graphene needed in this study are computed.     

全新的电导率特征矩阵方法及其在石墨烯THz频率光学特性上的应用

基于麦克斯韦方程组所要求的电磁场边界条件首次从理论上严格推导得到超薄导电体及其复合多层介质结构光学特性的一般计算方法及其特征矩阵公式, 其优点在于只要借助于导电体的电导率而无需知道其介电常数和磁导率即可计算得到反射、透射和吸收等光学特性, 克服了传统的传输矩阵方法必需知道组成材料的介电常数和磁导率才能获得其光学性质的问题, 并利用此方法获得了石墨烯及其复合多层结构在THz频率范围内反射、透射和吸收等光学行为.     

不同硼掺杂几何形态下石墨烯纳米带热导率与热整流的分子动力学研究

通过非平衡态分子动力学方法,研究了锯齿形石墨烯纳米带中掺杂原子硼的两种不同位置排列（三角形硼掺杂和平行硼掺杂）对热导率和热整流的影响并从理论上分析了其变化的原因。研究表明这两种硼掺杂模型在不同温度下导致石墨烯纳米带热导率大约54%-63%的下降;同时发现平行硼掺杂结构对热传递的抑制作用强于三角形硼掺杂结构;硼掺杂结构降低热导率的作用随着温度的升高逐渐减小;三角形硼掺杂结构两个方向上的热导率值具有较大差异,这种结构下的热整流随着温度的上升呈现减弱的趋势;而平行硼掺杂结构两个方向上的热导率值近乎相等,热整流现象表现不明显.     

氮原子修饰点缺陷石墨烯结构和性质的理论研究

氮原子掺杂石墨烯对基于石墨烯的器件和催化研究具有重要的应用价值.本文采用基于密度泛函理论的计算方法,研究了氮原子修饰的C-Bridge(碳原子吸附在石墨烯碳碳键桥位)、C-Top(碳原子吸附在石墨烯一个碳原子上方)和C7557(碳原子对吸附在石墨烯碳环上方)三种不同点缺陷类型的石墨烯物理性质.讨论不同缺陷石墨烯结构在用氮原子进行修饰前后体系的稳定性、电子结构等;计算得到了缺陷处原子的分波态密度(PDOS)图,分析了原子间的相互作用;模拟出氮原子修饰后缺陷石墨烯恒流模式的STM图像,以便和实验上得出的图像进行对比.计算结果表明,对于所选取的三种不同缺陷,氮原子能够较稳定地吸附在缺陷表面.C-Bridge和C-Top缺陷结构本身具有磁矩,经氮原子修饰后结构磁矩消失.与之相反,C7557缺陷结构本身没有磁矩,经氮原子修饰后缺陷体系带有磁矩.另外,C-Bridge和CTop两种不同缺陷结构石墨烯经过氮原子修饰后,体系几何结构变得完全一样.     

不同硼掺杂几何形态下石墨烯纳米带热导率与热整流的分子动力学研究

通过非平衡态分子动力学方法,研究了锯齿形石墨烯纳米带中掺杂原子硼的两种不同位置排列（三角形硼掺杂和平行硼掺杂）对热导率和热整流的影响并从理论上分析了其变化的原因。研究表明这两种硼掺杂模型在不同温度下导致石墨烯纳米带热导率大约54％－63％的下降;同时发现平行硼掺杂结构对热传递的抑制作用强于三角形硼掺杂结构;硼掺杂结构降低热导率的作用随着温度的升高逐渐减小;三角形硼掺杂结构两个方向上的热导率值具有较大差异,这种结构下的热整流随着温度的上升呈现减弱的趋势;而平行硼掺杂结构两个方向上的热导率值近乎相等,热整流现象表现不明显。