PHOTOCONDUCTIVITY OF Cd0.7Mn0.3Se

The photoconductivity spectra of semimagnetic semiconductor Cd0.7Mn0.3Se have been measured at 50-300 K and in the wavelength range of 5500 ? to 8000 ?. It is found that the energy gap of Cd0.7Mn0.3Se changes with the temperature linearly, and the temperature coefficient (dEg/dT) is about -7×10-4 eV/K. A photoconductivity peak which is related to Mn2+ is also found. This peak is located around 1.85 eV, nearly unshifted with variation of the temperature. The possible transition mechanisms in Cd1-xMnxSe have been discussed in the light of group theory and crystal field theory, and the results are in good agreement with experiments.     

Optical constants of Tl4Ga3InSe8 layered single crystals

The optical properties of Tl₄Ga₃InSe₈ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500–1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10–300 K revealed that the rate of change of the indirect band gap with temperature is γ=−4.1×10⁻⁴ eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.03 eV. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.10 eV, 23.17 eV, 6.21×10¹³ m⁻² and 2.58, respectively. From X-ray powder diffraction study, the parameters of monoclinic unit cell were determined.     

Photoelectron spectroscopic study of Li oxides on Li over-deposited V2O5 thin film surfaces

The Li oxides species formed on Li over-deposited V₂O₅ thin film surfaces have been studied by using X-ray and UV induced photoelectron spectroscopy (XPS and UPS). The photoelectron spectroscopic data show that the Li over-deposited V₂O₅ system itself is not stable. Further chemical decomposition reactions are taken place even under UHV conditions and lead to form Li₂O and Li₂O₂ compounds on the surface. The formation of Li₂O₂ causes to arise an emission line at about 11.3 eV in the valence band spectra.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

The dependence of I–V and C–V characteristics on temperature in the H-terminated Pb/p-Si(1 0 0) Schottky barrier diodes

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of H-terminated Pb/p-Si/Al contacts fabricated by us have been measured in the temperature range of 77–300 K. The experimental values of the barrier height (BH) Φ_bo and the ideality factor n for the device range from 0.674 and 1.072 eV (at 300 K) to 0.352 and 2.452 eV (at 77 K), respectively. The ideality factors become larger with lowering temperature while the barrier height decreases. The Φ_bo(n) plot shows a linear dependence in the temperature range of 77–300 K that can be explained by the barrier inhomogeneity at the metal/semiconductor interface. The extrapolation of the linear Φ_bo(n) plot to n = 1 has given a homogeneous barrier height of approximately 0.713 eV for the Pb/p-Si(1 0 0) contact. A Φ_bo versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of and σ_s = 80.5 mV for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Then, a modified versus 1/T plot gives and A^* as 0.828 eV and 54.89 A/cm² K², respectively. Furthermore, an average value of −0.687 meV/K for the temperature coefficient has been obtained, the value of −0.687 meV/K for hydrogen terminated p-type Si differs from those given for p-type Si without hydrogen termination in the literature.     

Magneto-optical properties and exciton dynamics in diluted magnetic semiconductor nanostructures

Nanostructures of diluted magnetic semiconductors were fabricated to study novel magneto-optical properties that are derived from quantum confined band electrons interacting with magnetic ions. Quantum dots (QDs) of Cd_0.97Mn_0.03Se were grown by the self-organization on a ZnSe substrate layer. QDs of Zn_0.69Cd_0.23Mn_0.08Se and quantum wires (QWRs) of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se were fabricated by the electron beam lithography. A single quantum well (QW) of ZnTe/Zn_0.97Mn_0.03Te and double QWs of Cd_0.95Mn_0.05Te–CdTe were grown by molecular beam epitaxy. Magneto-optical properties and the formation and relaxation dynamics of excitons were investigated by ultrafast time-resolved photoluminescence (PL) spectroscopy. Excitons in these nanostructures were affected by the low-dimensional confinement effects and the interaction with magnetic ion spins. The exciton luminescence of the Cd_0.97Mn_0.03Se QDs shows the confined exciton energy due to the dot size of 4–6 nm and also shows marked increase of the exciton lifetime with increasing the magnetic field. The QDs of Zn_0.69Cd_0.23Mn_0.08Se fabricated by the electron beam lithography display narrow exciton PL spectrum due to the uniform shape of the dots. The exciton luminescence from the QWRs of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se shows the influence of the one-dimensional confinement effect for the exciton energy and the luminescence is linearly polarized parallel to the wire direction. The transient PL from the ZnTe/Zn_0.97Mn_0.03Te QWs displays, by the magnetic field, the level crossing of the exciton spin states of the nonmagnetic and magnetic layers and the spatial spin separation for the excitons. Cd_0.95Mn_0.05Te–CdTe double QWs show the injection of the spin polarized excitons from the magnetic well to the nonmagnetic QW.     

ATR–SEIR study of anions and water adsorbed on platinum electrode

Adsorbed species on bare Pt, and UPD-Pb or UPD-Cu/Pt electrodes were characterized in HClO₄ or H₂SO₄ solutions at various potentials using attenuated total reflection (ATR)–surface enhanced infrared absorption (SEIRA) spectroscopy. On the bare Pt electrode, anions were observed at 1120–1095 cm⁻¹ at +0.0 < E < +0.6 V, solvated by water molecules with OH stretching absorption at 3600 cm⁻¹ and HOH bending mode at 1610–1620 cm⁻¹. In addition to the S–OH totally symmetric mode at 950 cm⁻¹, adsorbed sulfate species gave two bands at 1230–1100 cm⁻¹ between 0.0 V < E < +0.8 V that are assigned to ν₃ (symmetric stretch of S–O in SO₃) of ions with different coordination based on the peak shift by isotope substitution. At more negative potential, solely water molecules adsorb on the bare Pt surfaces. In contrast, it was found that electrolyte anions such as bisulfate and with hydrating water molecules adsorb onto the UPD-Pb/Pt and UPD-Cu/Pt electrodes even at much negative potentials, e.g. −0.2 V for UPD-Pb.     

Hybridization gap-open in CeIn3

Reflectivity spectra of CeIn₃ are measured at 7, 30, 50, 100, 150, 200 and 300 K in wild energy regions from 6 meV to 30 eV. Optical conductivity spectra are obtained from a Kramers–Kronig’ relation. A hump in the optical conductivity σ₁ is observed at about 500 cm⁻¹ below 100 K, resulting from strong hybridization between conduction electrons and Ce 4f electronic states. The low frequency plasmon indicating the existence of heavy particles is also observed below coherence temperature T^*  100 K.     

Impurity levels of iron-group ions in TiO2(II)

Photocurrent measurements on oxidized, single-crystal TiO₂ undoped and doped with V, Cr, Mn or Fe were made both before and after exposure to white light from a tungsten lamp; they revealed a band of states centered at 2.0 eV below the conduction-band edge E_c that appears to be the band of surface states active in the photoelectrolysis of water. They also revealed a band of bulk states extending from near the valence-band edge E_v to about 1.9 eV below E_c. The ESR signals from V⁴⁺, Cr³⁺ and Fe³⁺ ions in oxidized samples and from Mn³⁺ ions in reduced samples were measured before and after exposure to white and monochromatic light; changes in the ESR signal intensities allow placement of the V⁴⁺: d¹ level about 2.1 eV below E_c, the Cr³⁺: d³ level about 2.7 eV belo E_c, the Fe³⁺ level at or just below the valence band edge E_v which is 3.0 eV below E_c, the Fe²⁺ level approximately at E_c, the Mn³⁺ level about 1.9 eV below E_c. Comparison of experiments on oxidized and reduced samples suggests that the bulk states are associated with cation vacancies, and measurements with polarized light gave anisotropies that are qualitatively interpretable with a cation-vacancy model for the oxidized samples.     

Heat capacity investigation of dopant effects on the magnetic disordering temperature in Fe3O4†

The heat capacities of ZnFe₂O₄, Zn_0.005Fe_2.995O₄, Zn_0.066Fe_2.934O₄, and Cd_0.010Fe_2.990O₄ were measured over the temperature range of 350–1000 K by means of differential scanning calorimetry. The temperatures at which the maximum in heat capacity occurs due to the ferrimagnetic anomaly in the doped-Fe₃O₄ samples were found to decrease with increasing dopant. The excess entropy associated with the ferrimagnetic anomaly was estimated using three methods. One method, used previously for Fe₃O₄, employed a calculated lattice contribution for Fe₃O₄. The other two methods used the experimentally determined heat capacity of ZnFe₂O₄, either unmodified or mass adjusted, to approximate contributions from lattice vibrations.     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.     

Ce和O空位共掺杂TiO_2的电子结构与光学性质

采用基于密度泛函理论加U的计算方法,研究了Ce和O空位单(共)掺杂锐钛矿相TiO_2的电子结构和光吸收性质.计算结果表明,Ce和O空位共掺杂TiO_2的带隙中出现了杂质能级,且带隙窄化为2.67 eV,明显比纯TiO_2和Ce,O空位单掺杂TiO_2的要小,因而可提高TiO_2对可见光的响应能力,使TiO_2的光吸收范围增加.光吸收谱显示,掺杂后TiO_2的光吸收边发生了显著红移;在400.0—677.1 nm的可见光区,共掺杂体系的光吸收强度显著高于纯TiO_2和Ce单掺杂TiO_2,而略低于O空位单掺杂TiO_2.此外,Ce掺杂TiO_2中引入O空位后,TiO_2的导带边从-0.27 eV变化为-0.32 eV,这表明TiO_2的导带边的还原能力得到了加强.计算结果为Ce和O空位共掺杂TiO_2在可见光光解水方面的进一步研究提供了有力的理论依据.     

Crosstalk between two-photon and two-color (two-photon) excitation in optical beam induced current generation with two confocal excitation beams

We analyze the influence of residual two-photon excitation (2PE) in two-color (two-photon) optical beam induced current (2CE-OBIC) generation in wide band gap semiconductor samples. 2CE-OBIC generation is accomplished with two confocal excitation beams of separation angle θ and wavelengths λ₁ and λ₂ where , λ_e = hc/E_b, h is the Planck’s constant, c is speed of light in vacuum, and E_b is the energy band gap. Because the conduction band of the sample is a continuum, at least one excitation beam would also contribute an undesirable 2PE-OBIC signal that degrades the signal-to-noise ratio of the measured 2CE-OBIC response and broadens the effective OBIC distribution in the sample particularly when θ ≠ 0 or π. We show that the deleterious effects of crosstalk are reduced by a careful selection of λ₁ and λ₂ and the relative excitation beam intensities. λ₁ and λ₂ should be chosen to minimize the ratio of the two-photon absorption coefficients (β₁, β₂) to the 2CE absorption coefficient β₁₂ or at least satisfy the constraint: β₁ + β₂  β₁₂. Keeping the two excitation intensities equal is beneficial only when β₁ = β₂. Otherwise, it is advantageous to bias the intensity ratio towards the wavelength with a lower 2PE absorption coefficient.     

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

The anisotropic magnetoresistance (AMR) in permalloy Ni₈₁Fe₁₉ film deposited on a 1.2 nm Co₃₃Cr₆₇ buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni₈₁Fe₁₉ film with and without Co₃₃Cr₆₇ buffer layer. It was found that Co₃₃Cr₆₇ buffer layer can induce good (1 1 1) texture, while without Co₃₃Cr₆₇ buffer layer, Ni₈₁Fe₁₉ film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni₈₁Fe₁₉ film due to the formation of the large (1 1 1) textured grains in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer, limit the enhancement of the AMR effect.     

Na2TiGeO5: Crystal structure stability at low temperature and high pressure

The temperature evolution of the lattice parameters measured from 295 to 125 K exhibits a small instability below T_c≈278 K, indicating ferroelastic properties of Na₂TiGeO₅. The behavior is related to the specific crystal structure built of polyhedral layers with shared TiO₅ pyramids and GeO₄ tetrahedra, alternating with layers of Na⁺ cations. Antiparallel alignment of the short apical titanyl bond in adjacent rows of the polyhedral layer gives rise to spontaneous strain, when a distortion of the TiO₅ groups occurs. Single-crystal structures determined at room temperature and 120 K suggest that {1 1 0} domains, developing below T_c, entail a tetragonal-to-orthorhombic symmetry change. The mechanism is attributed to a shortening of the O–O distance between the polyhedral layers, and to minor shifts of the positions of the Ti atoms and the correlated oxygen atoms along the c-axis. The structure distortion, however, is too small to allow any unambiguous determination of the symmetry-breaking effects. The bulk modulus and its pressure derivative have been determined as B₀=89(2) GPa and . A pressure-induced phase transformation takes place at P_c≈12.5 GPa, presumably to an orthorhombic structure. The pressure effect on the transition temperature is given by ΔT_c/ΔP≈1.76 K/GPa.     

Composition and thermal-induced effects on the optical constants of Ge20Se80−xBix thin films

 The effects of composition and thermal annealing near crystallization temperature, T_c on the optical and structural properties of Ge₂₀Se_80−xBi_x (x=0, 2.5, 5 and 7.5 at%) was investigated. The influence of incorporation Bi content in Ge₂₀Se_80−xBi_x system results in a gradual decrease in the indirect optical gap from 1.89 to 1.44 eV, this behavior can be explained as increased tailing. On annealing, the optical band gap E_g decreases gradually for the crystallized films while the refractive index increases, this behavior can be attributed to transformation from amorphous to crystalline and was explained in the light of dangling bond model. The refractive index n of as-prepared and annealed films has been analyzed according to the Wwmple–DiDominico single oscillator model and the values of E_o and E_d were determined. The effect of annealing on the nature and degree of crystallization has been investigated by studying the structure using transmission electron microscope, X-ray diffraction and scanning electron microscope.     

Optical characterization of amorphous Ga50Se45S5 films

The transmission spectra of thermally evaporated Ga₅₀Se₄₅S₅ films were measured over the wavelength range 300–900 nm. A simple method, suggested by Swanepoel, was used for the determination of the optical constants and thickness of the films. Increasing the thickness of the film beyond 450 nm does not affect the optical constants. The dependence of the absorption coefficient on the photon energy (hν) at the edge of the absorption band is well described by the relation hν=β(hν−E_opt)² with an optical gap equals 2.4 eV. A good fit of the experimental points with Tauc relation indicates that non-direct transition is the most probable mechanism responsible for the photon absorption inside the investigated film.     

Interfacial properties of 2D WS2 on SiO2 substrate from X-ray photoelectron spectroscopy and first-principles calculations

Two-dimensional (2D) WS₂ films were deposited on SiO₂ wafers, and the related interfacial properties were investigated by high-resolution X-ray photoelectron spectroscopy (XPS) and first-principles calculations. Using the direct (indirect) method, the valence band offset (VBO) at monolayer WS₂/SiO₂ interface was found to be 3.97 eV (3.86 eV), and the conduction band offset (CBO) was 2.70 eV (2.81 eV). Furthermore, the VBO (CBO) at bulk WS₂/SiO₂ interface is found to be about 0.48 eV (0.33 eV) larger due to the interlayer orbital coupling and splitting of valence and conduction band edges. Therefore, the WS₂/SiO₂ heterostructure has a Type I energy-band alignment. The band offsets obtained experimentally and theoretically are consistent except the narrower theoretical bandgap of SiO₂. The theoretical calculations further reveal a binding energy of 75 meV per S atom and the totally separated partial density of states, indicating a weak interaction and negligible Fermi level pinning effect between WS₂ monolayer and SiO₂ surface. Our combined experimental and theoretical results provide proof of the sufficient VBOs and CBOs and weak interaction in 2D WS₂/SiO₂ heterostructures.     

Superconductivity and pseudogap states studied by microwave conductivity measurements of λ-(BEDT-TSF)2GaCl4

We have investigated the microwave response at 45 GHz in an organic superconductor λ-(BEDT-TSF)₂GaCl₄ with T_c = 4.8 K. We determine the μ₀H_c2–T phase diagram from microwave loss and find that the superconducting state is in the pure limit (l/ξ_GL  10). Although the real part of the complex conductivity (=σ₁ + iσ₂) does not show a coherence peak just below T_c, the London penetration depth completely saturates at low temperatures down to T/T_c = 0.2, which may provide an evidence for a conventional s-wave pairing. In the metallic state below about 50 K, (parallel to the c-axis) deviates downward from , while σ₂, which should be zero in a conventional metal, increases exponentially toward T_c. In spite of the fact that the Hagen–Rubens limit is well satisfied as far as the dc conductivity is concerned, a Drude model is unable to explain the large positive σ₂. In order to explain such anomalies in the metallic state, we propose a possible existence of so-called a pseudogap near a Fermi level. The anomalous increase of the positive σ₂ may be attributed to an appearance of pre-formed electron pairs in the pseudogap state. This appearance can be regarded as a precursor to the superconducting transition. Such a precursory phenomenon has been observed also in the isostructural FeCl₄ salt with the anomalous metallic states, which shows a negative σ₂ in contrast to the GaCl₄ salt. Just the opposite of ground states in between the GaCl₄ and FeCl₄ salts may result in the contrasting anomalous metallic states with different precursory phenomena with opposite signs of σ₂.     

Photoelectron spectroscopy measurements of the valence band structures of polymerized thin films of C60 and La0.1C60

The electronic valence band structures of polymerized thin films of C₆₀ and La_0.1C₆₀ have been studied by using ultra-violet photoelectron spectroscopy. Additionally, the films have been characterized by using Raman spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. The valence band of the C₆₀ film shows major peaks at binding energies of 2.6, 7.2, 10.3, and 12.6 eV. In the case of the doped film, we observe (i) an additional peak with a binding energy of 13.7 eV, (ii) evidence for redistribution of the density of electronic states due to hybridization between the 5d orbitals of La and the C₆₀ cage, and (iii) significantly higher density of the electronic states near the Fermi energy. The valence band spectra of the doped film are in good agreement with recent results of the density functional theory that support strong hybridization between the d-valence orbitals of La and the C₆₀ cage.