Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy

GaSb nanostructures in GaAs, grown by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling microscopy. Three different samples were examined, containing a thin quantum well, a quantum well near the critical thickness for dot formation, and finally self-organized quantum dots with base lengths of 5–8 nm and heights of about 2 nm. The dots are intermixed with a GaSb content between 60% and 100%. Also small 3D and 2D islands were observed, possibly representing quantum dots in an early growth stage and quantum dot precursors. All GaSb layers exhibit gaps, which are indications of an island-like growth mode during epitaxy.     

Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10⁴ cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.     

Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy

Cross-sectional Scanning Tunneling Microscopy (X-STM) is an ideal tool to study the structural properties of semiconductor nanostructures, such as InAs self-assembled quantum dots (QDs) and the properties of individual doping atoms at the atomic scale. The technique allows for a precise determination of the size, shape and composition of overgrown semiconductor nanostructures which can be part of a (complex) multilayer structure. In this paper we discuss our recent results on InAs QD structures that were capped by various methods in order to control their size and shape. We will show that the capping process does strongly affect the final QD structure and thus forms a very important step in the dot formation process. Recently people have started to investigate magnetically doped QDs. We have used our X-STM technique to study the incorporation of single Mn-impurities in InAs/GaAs QDs.     

Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

We have used cross-sectional scanning-tunneling microscopy (X-STM) to compare the formation of self-assembled InAs quantum dots (QDs) and wetting layers on AlAs (1 0 0) and GaAs (1 0 0) surfaces. On AlAs we find a larger QD density and smaller QD size than for QDs grown on GaAs under the same growth conditions (500 °C substrate temperature and 1.9 ML indium deposition). The QDs grown on GaAs show both a normal and a lateral gradient in the indium distribution whereas the QDs grown on AlAs show only a normal gradient. The wetting layers on GaAs and AlAs do not show significant differences in their composition profiles. We suggest that the segregation of the wetting layer is mainly strain-driven, whereas the formation of the QDs is also determined by growth kinetics. We have determined the indium composition of the QDs by fitting it to the measured outward relaxation and lattice constant profile of the cleaved surface using a three-dimensional finite element calculation based on elasticity theory.     

Resolving noncollinear magnetism by spin-polarized scanning tunneling microscopy

We present a density functional theory (DFT) investigation of magnetically frustrated Mn monolayers deposited on the triangular lattice of the Cu(1 1 1) surface. Noncollinear magnetic structures are treated on the basis of the vector spin-density formulation of the DFT. The spin-polarized scanning tunneling microscope operated in the constant-current mode is proposed as a powerful tool to investigate these complex magnetic structures.     

Annealing effect on InAs islands on GaAs(0 0 1) substrates studied by scanning tunneling microscopy

Post-annealing effects on InAs islands grown on GaAs(0 0 1) surfaces have been investigated by scanning tunneling microscopy (STM) connected to molecular beam epitaxy (MBE). It is found that for islands grown by 1.6 ML InAs deposition at 450 °C, post-annealing at 450 °C in an As₄ atmosphere causes dissolving of the InAs islands. In contrast, for larger islands obtained by 2.0 ML InAs deposition at 450 °C, the post-annealing leads to coarsening of the islands. The result can be explained in terms of a critical nucleus in heterogeneous nucleation.     

Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy

Cross-sectional scanning tunneling microscopy is used to study defects on the surface of semiconductor laser devices. Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in the layers above them. Devices are also studied whilst powered to look at how the devices change during operation, with a numerical model that confirms the observed behavior. Whilst powered, low-doped blocking layers adjacent to the active region are found to change in real time, with dopant diffusion and the formation of surface states. A tunneling model which allows the inclusion of surface states and tip-induced band bending is applied to analyze the effects on the tunneling current, confirming that the doping concentration is reducing and defect surface states are being formed.     

Perspectives of cross-sectional scanning tunneling microscopy and spectroscopy for complex oxide physics

Complex oxide heterostructure interfaces have shown novel physical phenomena which do not exist in bulk materials. These heterostructures can be used in the potential applications in the next generation devices and served as the playgrounds for the fundamental physics research. The direct measurements of the interfaces with excellent spatial resolution and physical property information is rather difficult to achieve with the existing tools. Recently developed cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S) for complex oxide interfaces have proven to be capable of providing local electronic density of states (LDOS) information at the interface with spatial resolution down to nanometer scale. In this perspective, we will briefly introduce the basic idea and some recent achievements in using XSTM/S to study complex oxide interfaces. We will also discuss the future of this technique and the field of the interfacial physics.     

Studies of imaging experiment for photon scanning tunneling microscopy

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光子扫描隧道显微镜的光电成像系统研究

本文论述了光子扫描隧道显微镜（ＰＳＴＭ）的显微成像机理、成像规律，针对具体的物理模型进行数值模拟计算，并得到了与实际探测相一致的场分布规律。采用自行研制的光子扫描隧道显微镜（ＰＳＴＭ）的显微实验系统对多种样品进行了表面显微成像研究，获得了关于样品表面三维立体图像信息，通过多种图像处理手段对原始图像进行后期处理，得到了更具视觉效果、更为逼真的样品表面图像。     

Ultimate method for unambiguous identification of all donors in epitaxial GaAs and related compounds

When epitaxial GaAs is grown by the method of molecular beam epitaxy (mbe) it would be p-type unless it is intentionally doped lightly during growth by using a particular substitutional donor atom. We have chosen the tin donor in this case to render the specimen n-type. Then the conventional far infrared photoconductivity technique is used to observe the 1s to 2p transition of the electron of the tin donor. The identity of the donor, the energy of the quantum transition as a function of applied magnetic field intensity, and the line shape characteristics of that particular donor then become unquestionable.Work supported by the U.S. Air Force Office of Scientific Research under Contract #AFOSR-78-3708-D.Supported by the National Science Foundation     

Reliable far-infrared photoconductivity method to identify a variety of residual donors in epitaxial GaAs

The chemical identity of unintentional contaminants in ultra-high purity eipitaxial GaAs and related semiconductor crystals can be distinguished by submillimeter wave magneto-spectroscopy at low temperature. An improved method of identifying hydrogen-like donors such as sulfur, silicon, selenium and germanium has been developed for the purpose of correcting some mistaken identifications that have been published during the past ten years. The new method requires the development of an experimental signature curve for each contaminant by measuring the energy of its 1s to 2p (m=–1) transition at several values of magnetic field intensity. The energy of this transition at a given magnetic field intensity is different depending upon the nucleus to which the electron is bound in the 1s state. The validity of the improved method was tested by means of transmutation doping.Work supported by the U.S. Air Force Office of Scientific Research under Grant #AFOSR-78-3708.Supported by the National Science Foundation.