非局域Sun-Guo-Grant方程的自洽模耦合理论

通过选取具有正确渐近行为的标度函数形式，将自洽的模耦合理论推广应用到对非局域的Sun-Guo-Grant方程的动力学标度性质的研究中.通过分析得到，在强耦合区基底维数d=1,2的情况下，动力学指数z随非局域参数ρ的变化关系.将这一结果与动力学重正化群理论和直接标度分析得到的结果进行了对比. 关键词： 表面粗糙生长动力学 动力学标度 自洽模耦合理论     

Evidence for the anomalous scaling behaviour of the molecular-beam epitaxy growth equation

According to the scaling idea of local slope, we investigate numerically and analytically anomalous dynamic scaling behaviour of (1+1)-dimensional growth equation for molecular-beam epitaxy. The growth model includes the linear molecular-beam epitaxy (LMBE) and the nonlinear Lai--Das Sarma--Villain (LDV) equations. The anomalous scaling exponents in both the LMBE and the LDV equations are obtained, respectively. Numerical results are consistent with the corresponding analytical predictions.     

Design and scaling of nano-electro-mechanical non-volatile memory (NEMory) cells

Design and scaling of the NEMory cell have been discussed. Based on analytical simulation using a simple parallel-plate approximation, scaling guideline is derived in terms of pull-in, release voltage, pull-in time and release time. It has been proved that beam length is the most dominant factor which increases operating voltage with scaling-down. Beam and air gap thickness also need to be scaled down in order to lower operating voltage while improving operating speed.     

Numerical study of anomalous dynamic scaling behaviour of (1+1)-dimensional Das Sarma-Tamborenea model

In order to discuss the finite-size effect and the anomalous dynamic scaling behaviour of Das Sarma-Tamborenea growth model,the (1+1)-dimensional Das Sarma-Tamborenea model is simulated on a large length scale by using the kinetic Monte-Carlo method.In the simulation,noise reduction technique is used in order to eliminate the crossover effect.Our results show that due to the existence of the finite-size effect,the effective global roughness exponent of the (1+1)-dimensional Das Sarma-Tamborenea model systematically decreases with system size L increasing when L > 256.This finding proves the conjecture by Aarao Reis[Aarao Reis F D A 2004 Phys.Rev.E 70 031607].In addition,our simulation results also show that the Das Sarma-Tamborenea model in 1+1 dimensions indeed exhibits intrinsic anomalous scaling behaviour.     

Observation of memory behaviour in cadmium sulphide nanorods doped ferroelectric liquid crystal mixture

In this study, cadmium sulphide (CdS) nanorods doped ferroelectric liquid crystal (FLC) sample cells have been prepared and studied. A memory effect has been observed in CdS nanorods (≤0.3?wt%) doped FLC mixture and confirmed by textures, dielectric and optical studies. The addition of nanorods increases the memory behaviour and efficiency. The occurrence of memory behaviour has been explained due to charge transfer from liquid crystal molecules to CdS nanorods and exists there for 5–15?min in 0.1–0.3?wt% CdS nanorods doped samples. An improvement in polarization, switching time, threshold voltage and rise time parameters has also been noticed in CdS nanorods doped FLC samples.     

Thermochemical resistive switching: materials,mechanisms, and scaling projections

In this article, resistive switching based on the thermochemical mechanism (TCM) is reviewed. This mechanism is observed when thermochemical redox processes dominate over electrochemical processes. As the switching is based on thermal effects, it is inherently unipolar, i.e., the transitions between the resistive states can be induced by the same bias voltage polarity. NiO has emerged as a “model material” for resistive switching based on the TCM effect and the discussion of the resistance states and the switching processes are focused on this material with the appropriate electrodes, mainly Pt. Unipolar switching is unambiguously filamentary. Conductive filaments are formed during the electroforming process needed prior to memory switching. The SET operation is interpreted as a sequence of threshold switching and subsequent Joule heating which triggers local redox reactions in which oxygen deficient NiO and, if the amount of released oxygen exceeds a certain amount, also metallic Ni will form. The RESET transition can be described as a thermally activated solid-state process resulting in a local decrease of the metallic Ni species. In terms of operation and reliability, a trade-off between RESET current reduction and retention was experimentally found. This is due to the decreasing long-term stability of the filaments with decreasing size. In addition, the scaling projection of a TCM-based memory technology with NiO is directly related to RESET currents and the availability of appropriate select devices.     

Proof of dynamical scaling in Smoluchowski's coagulation equation with constant kernel

Smoluchowski's coagulation equation for irreversible aggregation with constant kernel is considered in its discrete version wherec _t =c ₁ (t) is the concentration ofl-particle clusters at timet. We prove that for initial data satisfyingc ₁(0)>0 and the condition 0 c _l (0) <A (1+)^-l (A >0), the solutions behave asymptotically likec ₁ (t)t ^–2c(lt^–1) ast withlt ^–1 kept fixed. The scaling function c() is (1/gr), where , a conserved quantity, is the initial number of particles per unit volume. An analous result is obtained for the continuous version of Smoluchowski's coagulation equation wherec(v, t) is the oncentration of clusters of sizev.     

Scaling properties of phase-change line memory

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V ) and resistance-voltage (R-V ) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.     

Universal scaling behaviour in weighted trade networks

Identifying universal patterns in complex economic systems can reveal the dynamics and organizing principles underlying the process of system evolution. We investigate the scaling behaviours that have emerged in the international trade system by describing them as a series of evolving weighted trade networks. The maximum-flow spanning trees (constructed by maximizing the total weight of the edges) of these networks exhibit two universal scaling exponents: (1) topological scaling exponent η = 1.30 and (2) flow scaling exponent ζ = 1.03.     

Finite element analysis of the demagnetization effect and stress inhomogeneities in magnetic shape memory alloy samples

This paper is concerned with the finite element analysis of boundary value problems involving nonlinear magnetic shape memory behavior, as might be encountered in experimental testing or engineering applications of magnetic shape memory alloys (MSMAs). These investigations mainly focus on two aspects: first, nonlinear magnetostatic analysis, in which the nonlinear magnetic properties of the MSMA are predicted by the phenomenological internal variable model previously developed by Kiefer and Lagoudas, is utilized to investigate the influence of the demagnetization effect on the interpretation of experimental measurements. An iterative procedure is proposed to deduce the true constitutive behavior of MSMAs from experimental data that typically reflect the shape-dependent system response of a sample. Secondly, the common assumption of a homogeneous Cauchy stress distribution in the MSMA sample is tested. This is motivated by the expectation that the influence of magnetic body forces and body couples caused by field matter interactions may not be negligible in MSMAs that exhibit blocking stresses of well below 10?MPa. To this end, inhomogeneous Maxwell stress distributions are first computed in a post-processing step, based on the magnetic field and magnetization distributions obtained in the magnetostatic analysis. Since the computed Maxwell stress fields, though allowing a first estimation of the influence of the magnetic force and couple, do not satisfy equilibrium conditions, a finite element analysis of the coupled field equations is performed in a second step to complete the study. It is found that highly non-uniform Cauchy stress distributions result under the influence of magnetic body forces and couples, with magnitudes of the stress components comparable to externally applied bias stress levels.     

Steady-state scaling function of the (1 + 1)-dimensional single-step model

The steady-state height-height correlation function for the (1 + 1)-dimensional single-step model is calculated in a large-scale Monte Carlo simulation. Analysis of the data yields a universal ratio of scaling amplitudes which differs from the value obtained recently from a mode-coupling calculation. An empirical form for a universal scaling function is also presented.     

参考面的选取对利用自洽法建立染料激光器锁模方程的影响

本文讨论了利用自治法建立链模方程时,各种参考面位置的选取对锁模方程的影响,找到了合理的参考面位置,据此重新建立了适用于同步锁模,混台锁模和被动锁模的锁模方程.并给出了同步锁模的数值解,它与实验结果是一致的.     

任意阶标度分形格分抗与非正则格型标度方程

Carlson分形格电路是分抗的理想逼近情形,但仅具有负半阶运算性能,逼近效益随着电路节次数的增加逐渐降低.虽然可嵌套得到-1/2~n阶(n为大于或等于2的整数)分抗逼近电路,但结构复杂,无法实现任意分数阶运算.通过类比拓展Carlson分形格电路,获得具有高逼近效益的任意实数阶微积算子的分抗逼近电路——标度分形格分抗,并用非正则格型标度方程进行数学描述.分别探讨非正则格型标度方程的近似求解和真实解.通过调节电阻递进比α与电容递进比β的取值,可构造出具有任意运算阶的标度分形格分抗逼近电路.标度拓展极大地提高了标度分形格分抗电路的逼近效益.随着标度因子的增加,负半阶标度分形格分抗的逼近效益逐渐增大并明显高于Carlson分形格分抗.设计了基于五节Carlson分形格分抗与负半阶标度分形格分抗的半阶微分运算电路,并对周期三角波和周期方波信号进行半阶微分运算,实验测试结果与理论分析一致.     

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Based on the charge storage mode,it is important to investigate the scaling dependence of memory performance in silicon nanocrystal(Si-NC) nonvolatile memory(NVM) devices for its scaling down limit.In this work,we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor(CMOS) technology.It is found that the memory windows of eight kinds of test key cells are almost the same of about1.64 V @ ±7 V/1 ms,which are independent of the gate area,but mainly determined by the average size(12 nm) and areal density(1.8×10~(11)/cm~2) of Si-NCs.The program/erase(P/E) speed characteristics are almost independent of gate widths and lengths.However,the erase speed is faster than the program speed of test key cells,which is due to the different charging behaviors between electrons and holes during the operation processes.Furthermore,the data retention characteristic is also independent of the gate area.Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration.     

随机稀释基底上刻蚀模型动力学标度行为的数值模拟研究

表面界面动力学粗化过程是凝聚态物理领域重要的研究内容,为研究基底不完整性对刻蚀模型动力学 标度行为的影响,本文采用Kinetic Monte Carlo(KMC)方法,分析研究了在随机稀释基底上刻蚀模型(Etching model)生长表面的动力学标度行为.研究发现:尽管随机稀释基底的不完整性会对刻蚀表面的动力学 行为产生显著的影响,导致刻蚀表面粗糙度指数和生长指数有明显的增加, 但其仍基本满足原有的动力学标度规律.此外,本文还对刻蚀表面动力学标度指数的有限尺寸效应进行了 分析讨论.     

Atomistic study on shock behaviour of NiTi shape memory alloy

Abstract

The shock behaviour of NiTi shape memory alloy is investigated by using molecular dynamics simulation. The nano-pillar samples of the alloy are subjected to the impact of a piston with a velocity of 350 m/s at initial environment temperatures of 325 and 500 K. At 325 K, we observe two different pathways of the formation of BCO phase, the gradient twins, and the detwinning phenomena, strongly depending on the local stress and the deformation state. As the initial temperature increases to 500 K, the plasticity is dominated by the dislocation movements rather than the twinning at 325 K. The phase transformation and plasticity result in stress attenuation when the stress wave propagates through the nano-pillar. Furthermore, it is interesting to note that multiple stress peaks occur due to the formation of local complex atomic structures with various wave speeds, leading to the catch up and overlap of the stress waves.     

Sixteen-state magnetic memory based on the extraordinary Hall effect

We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells.     

Non-equilibrium scaling properties of a double quantum dot system: Comparison between perturbative renormalization group and flow equation approach

Since the experimental realization of Kondo physics in quantum dots, its far-from-equilibrium properties have generated considerable theoretical interest. This is due to the interesting interplay of non-equilibrium physics and correlation effects in this model, which has now been analyzed using several new theoretical methods that generalize renormalization techniques to non-equilibrium situations. While very good agreement between these methods has been found for the spin-1/2 Kondo model, it is desirable to have a better understanding of their applicability for more complicated impurity models. In this paper the differences and commons between two such approaches, namely the flow equation method out of equilibrium and the frequency-dependent poor man's scaling approach are presented for the non-equilibrium double quantum dot system. This will turn out to be a particularly suitable testing ground while being experimentally interesting in its own right. An outlook is given on the quantum critical behavior of the double quantum dot system and its accessibility with the two methods.     

On the scaling ranges of detrended fluctuation analysis for long-term memory correlated short series of data

We examine the scaling regime for the detrended fluctuation analysis (DFA)—the most popular method used to detect the presence of long-term memory in data and the fractal structure of time series. First, the scaling range for DFA is studied for uncorrelated data as a function of time series length L$L$ and the correlation coefficient of the linear regression R²$R^2$ at various confidence levels. Next, a similar analysis for artificial short series of data with long-term memory is performed. In both cases the scaling range λ$\lambda$ is found to change linearly—both with L$L$ and R²$R^2$. We show how this dependence can be generalized to a simple unified model describing the relation λ=λ(L,R²,H)$\lambda =\lambda (L,R^2,H)$ where H$H$ (1/2≤H≤1$1/2\le H\le 1$) stands for the Hurst exponent of the long range autocorrelated signal. Our findings should be useful in all applications of DFA technique, particularly for instantaneous (local) DFA where a huge number of short time series has to be analyzed at the same time, without possibility of checking the scaling range in each of them separately.