单晶铜纳米线屈服机理的原子模拟研究

采用分子静力学方法模拟了〈100〉单晶铜纳米线的拉伸变形过程,研究了纳米线屈服的机理. 结果表明：1） 纳米线初始屈服通过部分位错随机激活的{111}〈112〉孪生实现,后继屈服通过{111}〈112〉部分位错滑移实现;2） 纳米线变形初期不同滑移面上的部分位错在两面交线处相遇形成压杆位错,变形后期部分位错在刚性边界处塞积,两者都阻碍位错滑移,引起一定的强化作用. 关键词： 纳米线 屈服 位错 分子静力学     

Features of slip-band formation during the plastic straining of layered crystals

The effects of the narrowing and branching of screw slip bands during the plastic straining of nonuniformly doped or nonuniformly irradiated (layered) crystals are discussed theoretically on the basis of the equations of dislocation kinetics. Band formation is treated as a process involving the self-organization of dislocations in a dislocation ensemble at the mesoscopic level. The distributions of the densities of mobile and immobile dislocations, as well as of the local plastic strain rate, in a slip band propagating in a layered crystal are obtained. It is found that the narrowing of bands is due to the lower rate of broadening of the bands in stiff layers than in soft layers, which have not been hardened by doping or irradiation, and that branching is due the low local strain rate in stiff layers compared with the strain rate per slip band assigned by the straining machine. In the latter case the nucleation of new bands or the branching of existing bands is required to restore the balance between these rates. Fiz. Tverd. Tela (St. Petersburg) 41, 252–258 (February 1999)     

Transformation of Slip Dislocations in Σ3 Grain Boundary

Grain boundary processes during plastic deformation of bicrystals were studied by TEM. Two methods were used. In situ straining in the electron microscope followed by post mortem examination and post mortem observation of specimens previously deformed by in situ synchrotron radiation X-ray topography. Two mechanisms governing slip propagation across a coherent twin boundary in a Fe-Si alloy bicrystal were identified. The first mechanism is a dissociation of a slip dislocation with the Burgers vector lying parallel to the boundary into three equal grain boundary dislocations. The second mechanism is a decomposition of a slip dislocation with Burgers vector inclined to the boundary into a dislocation mobile in the other grain and two screw grain boundary dislocations.     

Deformation band evolution in [110] Al single crystals strained in tension

Several types of deformation bands form during uniaxial extension of Al single crystals for which the tensile axis is initially parallel to [110]. The objectives of the present work are to analyse crystal orientation evolution in the deformation bands and adjoining regions, and to integrate the experimental observations with a crystal mechanics model. The most prominent deformation bands contain secondary slip traces and exhibit crystal rotations consistent with unpredicted slip on a secondary slip system. These special bands of secondary slip (SBSS) become more closely aligned with the tensile axis as extension increases. The evolution of SBSS inclination with extension indicates that SBSS form initially as kink bands and that SBSS boundaries are immobile. SBSS grow during straining by expansion of the volume of material in which secondary slip operates. Deformed matrix (DM) bands are zones between SBSS; primary slip predominates in DM bands. Small intra-DM bands result from spatial variation of the shear amplitudes for the two primary slip systems. The evolution of intra-DM band inclination with extension indicates that intra-DM bands form initially as kink bands and that the band boundaries are mobile, at least to some extent.     

Modeling of Dislocation Generation and Interaction During High-Speed Deformation of Metals

Recent experiments by Kiritani et al. [1] have revealed a surprisingly high rate of vacancy production during high-speed deformation of thin foils of fcc metals. Virtually no dislocations are seen after the deformation. This is interpreted as evidence for a dislocation-free deformation mechanism at very high strain rates. We have used molecular-dynamics simulations to investigate high-speed deformation of copper crystals. Even though no pre-existing dislocation sources are present in the initial system, dislocations are quickly nucleated and a very high dislocation density is reached during the deformation. Due to the high density of dislocations, many inelastic interactions occur between dislocations, resulting in the generation of vacancies. After the deformation, a very high density of vacancies is observed, in agreement with the experimental observations. The processes responsible for the generation of vacancies are investigated. The main process is found to be incomplete annihilation of segments of edge dislocations on adjacent slip planes. The dislocations are also seen to be participating in complicated dislocation reactions, where sessile dislocation segments are constantly formed and destroyed.     

Dislocation dynamics in nanocrystalline nickel

It is believed that the dynamics of dislocation processes during the deformation of nanocrystalline materials can only be visualized by computational simulations. Here we demonstrate that observations of dislocation processes during the deformation of nanocrystalline Ni with grain sizes as small as 10 nm can be achieved by using a combination of in situ tensile straining and high-resolution transmission electron microscopy. Trapped unit lattice dislocations are observed in strained grains as small as 5 nm, but subsequent relaxation leads to dislocation recombination.     

Transmission electron microscopy study of the interaction between a glide dislocation and a dislocation node

Using in-situ tensile straining in conjunction with stereo imaging in a transmission electron microscope, real-time observations have been made in thin copper foils of the interaction of glide dislocations with a dislocation node. A mechanism is observed by which a dislocation approaching the node effectively bypasses the node by exchanging segments with one of the dislocations constituting the node.     

Energy barriers associated with slip–twin interactions

The energetics of slip–coherent twin boundary (CTB) interactions are established under tensile deformation in face centered cubic (fcc) copper with molecular dynamics simulations, exploring the entire stereographic triangle. The CTBs serve as effective barriers in some crystal orientations more than others, consistent with experimental observations. The resulting dislocation structures upon slip–twin reactions are identified in terms of Burgers vector analysis. Visualization of the dislocation transmission, lock formation, dislocation incorporation to twin boundaries, dislocation multiplication at the matrix–twin interface and twin translation, growth, and contraction behaviors cover the most significant reactions that can physically occur providing a deeper understanding of the mechanical behavior of fcc alloys in the presence of twin boundaries. The results make a distinction between deformation and annealing twins interacting with incident dislocations and point to the considerable role both types of twins can play in strengthening of fcc metals.     

Size dependent deformation behaviour and dislocation mechanisms in 〈1 0 0〉 Cu nanowires

Abstract

Molecular dynamics simulations have been performed to understand the size-dependent tensile deformation behaviour of 〈1 0 0〉 Cu nanowires at 10 K. The influence of nanowire size has been examined by varying square cross-section width (d) from 0.723 to 43.38 nm using constant length of 21.69 nm. The results indicated that the yielding in all the nanowires occurs through nucleation of partial dislocations. Following yielding, the plastic deformation in small size nanowires occurs mainly by slip of partial dislocations at all strains, while in large size nanowires, slip of extended dislocations has been observed at high strains in addition to slip of partial dislocations. Further, the variations in dislocation density indicated that the nanowires with d > 3.615 nm exhibit dislocation exhaustion at small strains followed by dislocation starvation at high strains. On the other hand, small size nanowires with d < 3.615 nm displayed mainly dislocation starvation at all strains. The average length of dislocations has been found to be same and nearly constant in all the nanowires. Both the Young’s modulus and yield strength exhibited a rapid decrease at small size nanowires followed by gradual decrease to saturation at larger size. The observed linear increase in ductility with size has been correlated with the pre- and post-necking deformation. Finally, dislocation–dislocation interactions leading to the formation of various dislocation locks, the dislocation–stacking fault interactions resulting in the annihilation of stacking faults and the size dependence of dislocation–surface interactions have been discussed.     

Multiscale dislocation dynamics simulations of shock-induced plasticity in small volumes

Multiscale dislocation dynamics plasticity (MDDP) was used to investigate shock-induced deformation in monocrystalline copper. In order to enhance the numerical simulations, a periodic boundary condition was implemented in the continuum finite element (FE) scale so that the uniaxial compression of shocks could be attained. Additionally, lattice rotation was accounted for by modifying the dislocation dynamics (DD) code to update the dislocations’ slip systems. The dislocation microstructures were examined in detail and a mechanism of microband formation is proposed for single- and multiple-slip deformation. The simulation results show that lattice rotation enhances microband formation in single slip by locally reorienting the slip plane. It is also illustrated that both confined and periodic boundary conditions can be used to achieve uniaxial compression; however, a periodic boundary condition yields a disturbed wave profile due to edge effects. Moreover, the boundary conditions and the loading rise time show no significant effects on shock–dislocations interaction and the resulting microstructures. MDDP results of high strain rate calculations are also compared with the predictions of the Armstrong–Zerilli model of dislocation generation and movement. This work confirms that the effect of resident dislocations on the strain rate can be neglected when a homogeneous nucleation mechanism is included.     

Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

Subgrains Analysis in α-Uranium Using Combined TEM and Single Crystal Plasticity Theory

Subgrains formed in α-uranium during the β → α phase transformation are believed to be dislocation cells. According to this assumption, the large transformation strains give rise to plastic deformation. The dislocations taking part in the plastic deformation are arranged into dislocation boundaries. In order to check this preposition the yield surface of α-uranium at the transformation temperature and the stresses in a growing α particle have been calculated. Due to the low symmetry of α-uranium, only five slip systems are activated. This allows to find a unique solution for the relative activity of each slip system. Thus, the selection of active slip systems without ambiguity resulting form low crystallographic symmetry serves as an important advantageous property for the study of the fundamentals of plastic deformation. Structural TEM observations are in progress in order to gather experimental verification of the plasticity calculations.     

Deformation behaviour of body centered cubic iron nanopillars containing coherent twin boundaries

Molecular dynamics simulations were performed to understand the role of twin boundaries on deformation behaviour of body-centred cubic (BCC) iron (Fe) nanopillars. The twin boundaries varying from 1 to 5 providing twin boundary spacing in the range 8.5–2.8 nm were introduced perpendicular to the loading direction. The simulation results indicated that the twin boundaries in BCC Fe play a contrasting role during deformation under tensile and compressive loadings. During tensile deformation, a large reduction in yield stress was observed in twinned nanopillars compared to perfect nanopillar. However, the yield stress exhibited only marginal variation with respect to twin boundary spacing. On the contrary, a decrease in yield stress with increase in twin boundary spacing was obtained during compressive deformation. This contrasting behaviour originates from difference in operating mechanisms during yielding and subsequent plastic deformation. It has been observed that the deformation under tensile loading was dominated mainly by twin growth mechanism. On the other hand, the deformation was dominated by nucleation and slip of full dislocations under compressive loading. The twin boundaries offer a strong repulsive force on full dislocations resulting in the yield stress dependence on twin boundary spacing. The occurrence of twin–twin interaction during tensile deformation and dislocation–twin interaction during compressive deformation has been discussed.     

Dislocation content of geometrically necessary boundaries aligned with slip planes in rolled aluminium

Previous studies have revealed that dislocation structures in metals with medium-to-high stacking fault energy, depend on the grain orientation and therefore on the slip systems. In the present work, the dislocations in eight slip-plane-aligned geometrically necessary boundaries (GNBs) in three grains of near 45° ND rotated cube orientation in lightly rolled pure aluminium are characterized in great detail using transmission electron microscopy. Dislocations with all six Burgers vectors of the ½?1?1?0? type expected for fcc crystals were observed but dislocations from the four slip systems expected active dominate. The dislocations predicted inactive are primarily attributed to dislocation reactions in the boundary. Two main types of dislocation networks in the boundaries were identified: (1) a hexagonal network of the three dislocations in the slip plane with which the boundary was aligned; two of these come from the active slip systems, the third is attributed to dislocation reactions (2) a network of three dislocations from both of the active slip planes; two of these react to form Lomer locks. The results indicate a systematic boundary formation process for the GNBs. Redundant dislocations are not observed in significant densities.     

Dislocations in plastically deformed Fe-3% Si alloy single crystals

The plastic deformation of Fe-3%Si alloy single crystals made from the melt is studied by the method of etching of dislocations. At a room-temperature and at static stress deformation by slip occurs in the 1/2〈111〉 directions along planes of maximum resolved shear stress. The plastic properties are determined by the motion of screw dislocations which cause the broadening of slip bands.     

Stimulation and Suppression of Grain Boundary Sliding by Intragranular Slip in Zinc Bicrystals

The influence of intragranular slip on grain boundary sliding is studied in originally compatible zinc bicrystals with symmetric tilt boundary. The experiment is designed to separate different effects of intragranular slip on the boundary sliding and establish their mechanisms. Grain boundary sliding with and without development of intragranular slip is observed. The rate of sliding accompanied by slip is more than five times of that without slip. A good correlation between the boundary sliding and intragranular slip prior to slide hardening is established. Slide hardening followed by the negative sliding near one end of the boundary and strain hardening in the boundary vicinity, are observed at the last stages of deformation. For the case of formation of slip induced glissile grain boundary dislocations of opposite signs the possibility of their contribution to total grain boundary sliding, is analyzed. The effect of the increase in the rate of sliding is explained in terms of the accommodation of sliding by slip and appearance of additional glissile grain boundary dislocations of one sign due to strain incompatibility. Contribution of these different dislocation mechanisms to the increase in the sliding rate is determined for the stage of deformation preceding slide hardening. It is supposed that the effect of slide hardening and negative sliding as well as boundary curving is created by non-smooth boundary and small degree of incompatibility caused by straining.     

Atomistic simulation of the stacking fault energy and grain shape on strain hardening behaviours of FCC nanocrystalline metals

ABSTRACT

Ultra-fine grained copper with nanotwins is found to be both strong and ductile. It is expected that nanocrystalline metals with lamella grains will have strain hardening behaviour. The main unsolved issues on strain hardening behaviour of nanocrystalline metals include the effect of stacking fault energy, grain shape, temperature, strain rate, second phase particles, alloy elements, etc. Strain hardening makes strong nanocrystalline metals ductile. The stacking fault energy effects on the strain hardening behaviour are studied by molecular dynamics simulation to investigate the uniaxial tensile deformation of the layer-grained and equiaxed models for metallic materials at 300?K. The results show that the strain hardening is observed during the plastic deformation of the layer-grained models, while strain softening is found in the equiaxed models. The strain hardening index values of the layer-grained models decrease with the decrease of stacking fault energy, which is attributed to the distinct stacking fault width and dislocation density. Forest dislocations are observed in the layer-grained models due to the high dislocation density. The formation of sessile dislocations, such as Lomer–Cottrell dislocation locks and stair-rod dislocations, causes the strain hardening behaviour. The dislocation density in layer-grained models is higher than that in the equiaxed models. Grain morphology affects dislocation density by influencing the dislocation motion distance in grain interior.     

Slip band formation and mobile dislocation density generation in high rate deformation of single fcc crystals

The mechanisms for the nucleation, thickening, and growth of crystallographic slip bands from the sub-nanoscale to the microscale are studied using three-dimensional dislocation dynamics. In the simulations, a single fcc crystal is strained along the [111] direction at three different high strain rates: 10⁴, 10⁵, and 10⁶?s^??1. Dislocation inertia and drag are included and the simulations were conducted with and without cross-slip. With cross-slip, slip bands form parallel to active (111) planes as a result of double cross-slip onto fresh glide planes within localized regions of the crystal. In this manner, fine nanoscale slip bands nucleate throughout the crystal, and, with further straining, build up to larger bands by a proposed self-replicating mechanism. It is shown that slip bands are regions of concentrated glide, high dislocation multiplication rates, and high dislocation velocities. Cross-slip increases in activity proportionally with the product of the total dislocation density and the square root of the applied stress. Effects of cross-slip on work hardening are attributed to the role of cross-slip on mobile dislocation generation, rather than slip band formation. A new dislocation density evolution law is presented for high rates, which introduces the mobile density, a state variable that is missing in most constitutive laws.     

Subsurface defect evolution and crystal-structure transformation of single-crystal copper in nanoscale combined machining

ABSTRACT

In the paper, molecular dynamics simulation is applied to study the evolution and distribution of subsurface defects during nanoscale machining process of single-crystal copper. The chip-removal mechanism and the machined-surface-generative mechanism are examined through analysis of the dislocation evolution and atomic migration of the workpieces. The findings show that under different stresses and temperatures, the difference of the binding energy leads to a zoned phenomenon in the chip. Owing to elastic deformation, some of the dislocations could be recovered and form surface steps; moreover, the work hardening of the workpiece can be achieved on account of generation of twin boundaries, Lomer-Cottrell dislocations, and stacking fault tetrahedra (SFT) by plastic deformation. A process of evolution of an immobile dislocation group containing stair-rod dislocations into SFT is discovered, which is different from the traditional Silcox-Hirsch mechanism. Furthermore, a growth oscillation phenomenon, which corresponding stacking fault planes growth and retraction during the formation of the stable SFT, is discussed.     

Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals

The transformation of the low-temperature emission spectrum of cadmium selenide crystals during plastic deformation by a point load and by uniaxial compression is investigated. A one-to-one correspondence is established between the occurrence of photoluminescence bands in the vicinity of 1.765 eV and the motion of dislocations in the prismatic slip system, on the one hand, and the emergence of a 1.792-eV band as a result of dislocation slip in the basal plane, on the other. Fiz. Tverd. Tela (St. Petersburg) 40, 1845–1848 (October 1998)