180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIOx/Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an end-loaded tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

A Fixed Tuned Low Noise 600-700 GHz SIS Receiver

We have designed and fabricated a fixed tuned low noise 600-700 GHz SIS mixer. Twin junctions connected in parallel was employed in the mixer design. A short microstrip tuning structure was used to minimize the RF signal loss at frequency above the energy gap. A receiver noise temperature below 200 K (without any loss correction) in the frequency range of 630 to 660 GHz was recorded. The lowest noise temperature of the receiver was 181 K (without any loss correction) at 656 GHz.     

AN UNCOOLED VERY LOW NOISE SCHOTTKY DIODE RECEIVER FRONT-END FOR MIDDLE ATMOSPHERIC OZONE AND CARBON MONOXIDE MEASUREMENTS

The paper describes an uncooled front-end of the Schottky diode receiver system, which may be applied for observations of middle atmospheric ozone and carbon monoxide thermal emission lines at frequencies 110.8 GHz and 115.3 GHz, respectively. The mixer of the front-end has utilized high-quality Schottky diodes that allowed us to reduce the mixer conversion loss. The combination of the mixer and an ultra-low-noise IF amplifier in the one integrated unit has resulted in double-sideband (DSB) receiver noise temperature of 260 K at a local oscillator (LO) frequency of 113.05 GHz in the instantaneous IF band from 1.7 to 2.7 GHz. This is the lowest noise temperature ever reported for an uncooled ozone receiver system with Schottky diode mixers.     

Investigation of a heterodyne receiver with open structure mixer at 324 GHz and 693 GHz

The performance of a submillimeter heterodyne receiver using an HCOOH laser local oscillator and an open structure mixer with a Schottky barrier diode has been optimized for 693 GHz. Working at room temperature a single sideband (SSB) system noise temperature of 7,300 K, a mixer noise temperature of 6,100 K and a conversion loss of 12 dB has been achieved. The same receiver system has been investigated at 324 GHz using an HCOOD laser local oscillator yielding a noise temperature of 3,100 K (SSB), a mixer noise temperature of 2,400 K (SSB) and a conversion loss of 10 dB (SSB). An acousto-optical spectrometer has also been constructed, with 1024 channels and a channel-bandwidth of 250 kHz. The system NEP per channel was 2.5×10^–17 W/Hz^1/2 at 324 GHz and 5.0×10^–17 W/Hz^1/2 at 693 GHz.     

A Very Low-Noise Integrated 3MM-Wave Schottky Diode Mixer and PHEMT IF Amplifier

An integrated 3mm-wave Schottky diode mixer and pseudomorphic high-electron-mobility transistor (PHEMT) IF amplifier with record noise performance at room temperature is described. The design has shown the room-temperature double-sideband (DSB) receiver noise temperature T_R^DSB of 190 K at 100 GHz due to a very low conversion loss in the full-height waveguide mixer and an ultra-low noise of the PHEMT IF amplifier. The receiver noise temperature has been reduced by a factor of 1.5 in comparison with the best previously reported 3mm-wave Schottky diode mixer receiver.     

Measured mixer noise temperature and conversion loss of a cryogenic Schottky diode mixer near 800 GHz

We accurately measured the noise temperature and conversion loss of a cryogenically cooled Schottky diode operating near 800 GHz, using the UCB/MPE Submillimeter Receiver at the James Clerk Maxwell Telescope. The receiver temperature was in the range of the best we now routinely measure, 3150 K (DSB). Without correcting for optical loss or IF mismatch, the raw measurements set upper limits ofT _M=2850 K andL _M=9.1 dB (DSB), constant over at least a 1 GHz IF band centered at 6.4 GHz with an LO frequency of 803 GHz. Correction for estimated optical coupling and mismatch effects yieldsT _M=1600 K andL _M=5.5 dB (DSB) for the mixer diode itself. These values indicate that our receiver noise temperature is dominated by the corner cube antenna's optical efficiency and by mixer noise, but not by conversion loss or IF mismatch. The small fractional IF bandwidth, measured mixer IF band flatness from 2 to 8 GHz, and similarly good receiver temperatures at other IF frequencies imply that these values are representative over a range of frequencies near 800 GHz.     

High Doping Density Schottky Diodes in the 3MM Wavelength Cryogenic Heterodyne Receiver

The paper describes a 3mm cryogenic mixer receiver using high doping density (“room-temperature”) Schottky diodes. The measured equivalent noise temperature T_eq of the diodes is 109 K at 20 K, which is much higher than the T_eq of the low doping density (“cryogenic”) diodes. In spite of this, the double-sideband (DSB) noise temperature of the cryogenic receiver developed is 55 K at 110 GHz, owing to the low conversion loss of the mixer and ultra-low noise of the PHEMT IF amplifier. This is the lowest noise temperature ever reported for a Schottky diode mixer receiver. The results obtained are useful for the development of submm receivers in which high doping density Schottky diodes are used.     

An Integrated Sideband-Separating SIS Mixer Based on Waveguide Split Block for 100 GHz Band with 4.0–8.0 GHz IF

We have developed an integrated sideband-separating SIS mixer for the 100 GHz band based on the waveguide split block. The measured receiver noise temperatures with 4.0–8.0 GHz IF are less than 60 K in the LO frequency range of 90–110 GHz, and a minimum value of around 45 K is achieved at 100 GHz. The image rejection ratios are more than 10 dB in the frequency range of 90–110 GHz. We have installed the sideband-separating SIS mixer into an atmospheric ozone-measuring system at Osaka Prefecture University and successfully observed an ozone spectrum at 110 GHz in SSB mode. This experimental result indicates that the sideband-separating SIS mixer is very useful for astronomical observation as well as atmospheric observation.     

A low-noise SIS receiver measured from 480 GHz to 650 GHz using Nb junctions with integrated RF tuning circuits

A heterodyne receiver using an SIS waveguide mixer with two mechanical tuners has been characterized from 480 GHz to 650 GHz. The mixer uses either a single 0.5 × 0.5 µm² Nb/AlO_x/Nb SIS tunnel junction or a series array of two 1 µm² Nb tunnel junctions. These junctions have a high current density, in the range 8 – 13 kA/cm². Superconductive RF circuits are employed to tune the junction capacitance. DSB receiver noise temperatures as low as 200 ± 17 K at 540 GHz, 271 K ± 22 K at 572 GHz and 362 ± 33 K at 626 GHz have been obtained with the single SIS junctions. The series arrays gave DSB receiver noise temperatures as low as 328 ± 26 K at 490 GHz and 336 ± 25 K at 545 GHz. A comparison of the performances of series arrays and single junctions is presented. In addition, negative differential resistance has been observed in the DC I–V curve near 490, 545 and 570 GHz. Correlations between the frequencies for minimum noise temperature, negative differential resistance, and tuning circuit resonances are found. A detailed model to calculate the properties of the tuning circuits is discussed, and the junction capacitance as well as the London penetration depth of niobium are determined by fitting the model to the measured circuit resonances.