Fast magnetic relaxation, studied by microwave absorption in neutron-irradiated YBa2Cu3O7−x ceramic

A contactless microwave method is used to measure the fast magnetic relaxation of granular ceramic samples of YBa₂Cu₃O_7−x irradiated by neutrons with fluences of 10¹⁶–10¹⁹ cm⁻². An experimental study of the time dependence of the relaxation of high-frequency (rf) absorption (f=100 MHz) after the action of an external magnetic field pulse has shown the magnetic relaxation times τ ₀ to be in the time interval of 0.5–150 ms. The rf-absorption mechanism is discussed in terms of an intergranular system with a thermally activated flux of vortices and their diffusion in the granular medium. Fiz. Tverd. Tela (St. Petersburg) 39, 977–981 (June 1997)     

Energy transfer in Gd2SiO5-Ce, Y2SiO5-Ce, and Be2La2O5-Ce crystals during selective VUV and core excitation

Luminescence vacuum ultraviolet time-resolved spectroscopy is used to study electronic excitations and energy transfer in Ce³⁺-doped crystals of gadolinium and yttrium oxyorthosilicates excited by synchrotron radiation in the vacuum ultraviolet (4–30 eV) and x-ray (50–200 eV) regions. At T = 10 K, both crystals exhibit intrinsic electronic excitations whose radiative relaxation occurs through fast (τ = 3 ns) and slow (microsecond) channels, which correspond to two possible types of self-trapped excitons. A comparison of the relaxation of above-edge and core electronic excitations in the Ce³⁺-doped crystals of gadolinium oxyorthosilicate and lanthanum beryllate indicates that the nature of the charge carriers involved in the recombination processes of energy transfer to luminescence centers is diverse. __________ Translated from Fizika Tverdogo Tela, Vol. 47, No. 8, 2005, pp. 1435–1439. Original Russian Text Copyright ? 2005 by Ivanov, Pustovarov, Kirm, Shlygin, Shirinskii.     

Resonant two-photon absorption in a tetragonal CdP2

Kinetic, spectral, intensity, angular, and polarization of resonant two-photon absorption (TPA) in β-CdP₂ has been investigated. Resonant TPA was observed for which the total energy of the two photons was 2.60 eV. It is shown that resonant TPA takes place via a real intermediate level d ₃ in the band gap at the depth E _c-0.86 eV. The electron transverse relaxation time for resonant TPA, the cross section for absorption of laser photons in d ₃→C transitions, the equilibrium population of d ₃ centers in a doped n-type sample, and the resonant TPA constant were determined as 4.3×10⁻¹⁴ s, 1.25×10⁻¹⁷ cm², 0.95, and 0.028 cm/MW, respectively. Fiz. Tverd. Tela (St. Petersburg) 40, 1252–1256 (July 1998)     

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

Ceramic samples of (1−x)SrTiO₃-xSrMg_1/3Nb_2/3O₃ and (1−x)SrTiO₃-xSrSc_1/2Ta_1/2O₃ were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ₀ were determined to be 0.21–0.3 eV and from 10⁻¹¹ to 10⁻¹² s for the high-temperature relaxation and 0.01–0.02 eV and 10⁻⁸–10⁻¹⁰ s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg²⁺ and Nb⁵⁺ (or Sc³⁺ and Ta⁵⁺) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg²⁺ (or Sc³⁺) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb⁵⁺-Ti³⁺ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.     

Influence of samarium on optical absorption in thin films of the solid electrolyte RbAg4I5

The fundamental optical absorption of films of the solid electrolyte RbAg₄I₅ electrolyte films decreases (by approximately 25%) after vacuum evaporation of Sm films onto them, and a broad strong-absorption band with a maximum at 2.4 eV appears within the bad gap. The films bleach after 5–10 days in dry air. The observed phenomena are attributed to a high concentration (∼3×10²⁰ cm⁻³) of point defects, including F-centers, in nonstoichiometric RbAg₄I₅:Sm, and also to the oxidation of Sm. In colored films the ionic conductivity is σ⋍0.9σ ₀, and in bleached films it is close to the initial value σ ₀. Fiz. Tverd. Tela (St. Petersburg) 39, 1544–1547 (September 1997)     

Electronic excitations of Sc3+ impurity in α-Al2O3 crystals

Optical properties, including luminescence, of scandium-doped α-Al₂O₃ crystals have been studied in the VUV range. An absorption band associated with the scandium impurity was observed at the fundamental-absorption edge of crystalline corundum. A strong luminescence band peaking at 5.6 eV, which is most effectively excited within the 7.7–8.8-eV interval, was found. The kinetic and polarization characteristics of this luminescence were studied within the temperature range 6–500 K. An excitation model of the impurity complex and the mechanism of its relaxation are discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 653–654 (April 1998)     

Room-temperature deposition of transparent conductive Al-doped ZnO thin films using low energy ion bombardment

Al-doped zinc oxide (AZO) films are prepared on quartz substrates by dual-ion-beam sputtering deposition at room temperature (∼25°C). An assisting argon ion beam (ion energy E _i =0–300 eV) directly bombards the substrate surface to modify the properties of AZO films. The effects of assisted-ion beam energy on the characteristics of AZO films were investigated in terms of X-ray diffraction, atomic force microscopy, Raman spectra, Hall measurement and optical transmittance. With increasing assisting-ion beam bombardment, AZO films have a strong improved crystalline quality and increased radiation damage such as oxygen vacancies and zinc interstitials. The lowest resistivity of 4.9×10⁻³Ω cm and highest transmittance of above 85% in the visible region were obtained under the assisting-ion beam energy 200 eV. It was found that the bandgap of AZO films increased from 3.37 to 3.59 eV when the assisting-ion beam energy increased from 0 to 300 eV.     

Time-resolved luminescence spectroscopy of pure and doped with Ce3+ ions SrAlF5 crystals

The results of a study of time-resolved photoluminescence (PL) and energy transfer in both pure and doped with Ce³⁺ ions SrAlF₅ (SAF) single crystals are presented. The time-resolved and steady-state PL spectra in the energy range of 1.5–6.0 eV, the PL excitation spectra and the reflectivity in the energy range of 3.7–21 eV, as well as the PL decay kinetics were measured at 8.8 and 295 K. The lattice defects were revealed in the low temperature PL spectra (emission bands at 2.9 and 4.5 eV) in the undoped SAF crystals. The luminescence spectra of the doped Ce³⁺:SAF crystals demonstrate a new selective emission bands in the range of 3.7–4.5 eV with the exponential decay kinetics (τ ≈ 60 ns at X-ray excitation). These bands correspond to the d-f transitions in Ce³⁺ ions, which occupy nonequivalent sites in the crystal lattice.     

Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K

The temperature dependence of the energy relaxation time τ_e (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τ_e, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ _e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τ_LOτ4.5 ps). The energy losses calculated from the τ_e data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 371–375 (10 September 1996)     

Basic physics of semiconductor hydrogen sensors

The most probable physical models of hydrogen sensors based on thin stannic oxide films, MOS-structures, and tunnel MOS-diodes are discussed. The emphasis is on the mechanisms of formation of sensor response to hydrogen. The analytical equations describing the dependence of the response on the hydrogen concentration nH₂ are derived for all types of sensors. The relations describing the dependences of the SnO ₂-sensor conductivity and response on the absolute humidity of a gas mixture are given. It is shown that the relaxation time τ_rel of the response of SnO ₂-and MOS-structure sensors is determined by the relaxation time τ_a of hydrogen atom adsorption on the SnO ₂ and SiO ₂ surfaces, respectively. For the MOS-diodes, τ_rel = τ_a at nH₂ and τ_rel = τ_d at nH₂≥7.5·10³, where τ_d is the relaxation time of hydrogen atom diffusion through an SiO ₂ layer. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 84–98, April, 2008.     

Temperature-dependent Time-resolved Fluorescence Study of Cinchonine Alkaloid Dication

Photo induced excited state dynamical processes of cinchonine alkaloid dication (C⁺⁺) have been studied over a wide range of temperature using steady state and nanosecond time-resolved fluorescence spectroscopic techniques. The temperature-dependent fluorescence studies of C⁺⁺ clearly indicate the existence of two distinct emitting species having their own characteristic decay rates. The shorter-lived species shows a usual temperature dependence with increasing non-radiative deactivation at higher temperatures, while the longer-lived species show features resembling to the excited state solvent relaxation process with a large solvent relaxation time (τ _r ∼ 6 ns). The species emitting in the lower energy side, having longer decay time is found to be more sensitive towards chloride ion quenching and has a charge transfer character. Further, concentration quenching with decrease in τ _r of long lived species shows the possibility of energy migration along with solvent relaxation in C⁺⁺.     

Comparison of optical properties and mechanical/electrical degradation of some low density polyethylene-and polypropylene-based polymer blends

In this study, the optical properties as well as mechanical and electrical degradation of low-density polyethylene (LDPE)/polypropylene fiber (PP fiber) (10–50% PP fiber), polypropylene (PP)/PP fiber (10–50% PP fiber), and LDPE/diamond (0.1–3% diamond) blends, which are prepared by hot pressing method, with changing thicknesses ranging from 30 to 225 μm, are compared. The spectra, in the wavelength range 200–2500 nm, are examined. Based on optical absorption spectra obtained, Tauc graphs are plotted. Determined values of the direct optical energy gap (E _d ^opt ), the indirect optical energy gap (E _i ^opt ), the width of the band (ΔE), and ultraviolet transmittance (T_UV) are listed. The direct E _d ^opt and indirect E _i ^opt values for organic blends are in the range of 3.10–3.17 eV and 1.52–2.99 eV; for inorganic blends they are 1.80–4.13 eV and 1.55–4.7 eV respectively. The electrical strength (ε) and the mechanical tension (σ) have been investigated, and graphs (the dependence of the electrical life time log τ_ε on ε) are given. The experimental results are analyzed from the viewpoint of the validity of the thermofluctuation theory. LDPE and LDPE/0.5% diamond composite parameters consecutively changed: σ from 68 to 82 MPa, ε from 60·10⁶ to 85·10⁶ V/m, mechanical lifetime τ_σ from 10 to 1.5·10⁵ sec, electrical lifetime τ_ε from 2· 10³ to 2·10⁵ sec, and structure-sensitive parameters γ and χ — from 1.48 to 1.18 (J)MPa/mole and from 0.97 to 0.70 (J)Vm⁻¹/mole respectively. The values of mechanical and electrical durability were observed to increase by 20 and 41%, respectively, for LDPE/0.5% diamond composite. Published in Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 677–683, September–October, 2007.     

Different path of pressure-induced oxygen ordering and disordering processes in YBa2Cu3O6+x near a metal-insulator transition

The relaxation of the superconducting transition temperature T _c in YBa₂Cu₃O_6.38 is investigated with increasing oxygen order in the CuO_x plane under 1 GPa pressure and with decreasing oxygen order after the pressure is relieved. It is established that the oxygen disordering process is more rapid than the pressure-induced ordering process: The ratio of the relaxation times of T _c in these processes τ _ord/τ _disord≈5. This behavior could be caused by different mechanisms of the pressure-induced increase in the Cu-O chain length and decrease of this length after pressure relief. Fiz. Tverd. Tela (St. Petersburg) 40, 1968–1973 (November 1998)     

Temporal structure of the muon disk at large distances from the axis of extensive air showers with E 0⩾6 ×1016eV

Preliminary results are reported from an investigation of the temporal structure of the muon disk in extensive air showers (EASs) with primary energy E ₀≥6×10¹⁶eV at distances 100–1500 m from the axis. The investigation is performed at the Yakutsk array using the large muon detector, which commenced operation in November 1995, with a planned area 184 m² and a detection threshold E _μ≈0.5· sec θ GeV. For E ₀>10¹⁸eV it is found that the thickness of the muon disk tends to decrease. This requires substantial changes in our notions of the development of EASs. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 6, 361–366 (25 March 1998)     

Dynamics of two-photon picosecond absorption in ZnWO<Subscript>4</Subscript> and PbWO<Subscript>4</Subscript> crystals

A method has been proposed to analyze the dynamics of interband two-photon absorption in a nonlinear medium excited by a sequence of picosecond laser pulses of variable intensity and continuous probe radiation. Induced absorption leading both to hysteresis in the dependence of the absorption on the intensity of laser pump radiation and to the opacity of crystals at the pump wavelength has been revealed in initially transparent ZnWO₄ and PbWO₄ crystals irradiated by a train of 523.5-nm pulses with a duration of 20 ps at pump intensities of 5 to 140 GW/cm². The kinetics of an increase in absorption and its subsequent relaxation at a 523.5-nm picosecond excitation of the crystals have been measured with continuous 633-nm probe radiation. An exponential component of the increase in absorption with the time constant τ = 2−3.5 and 8–9.5 μs depending on the direction of the linear polarization of pump radiation has been revealed at 300 K in ZnWO₄ and PbWO₄ crystals, respectively. The absorption relaxation kinetics in the crystals are complicated and approach an exponential at a late stage with the constant τ = 40−130 and 12–80 ms for the ZnWO₄ and PbWO₄ crystals, respectively.     

Synthesis and characterization of electron beam evaporated LiCoO<Subscript>2</Subscript> thin films

LiCoO₂ thin films were prepared by electron beam evaporation technique using LiCoO₂ target with Li/Co ratio 1.1 in an oxygen partial pressure of 5 × 10⁻⁴ mbar. The films prepared at substrate temperature T _s < 573 K were amorphous in nature, and the films prepared at T _s > 573 K exhibited well defined (104), (101), and (003) peaks among which the (104) orientation predominates. The X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma (ICP) data revealed that the films prepared in the substrate temperature range 673–773 K are nearly stoichiometric. The grain size increases with an increase of substrate temperature. The Co–e_g absorption bands, are empty and their peak position lies at around 1.7 eV above the top to the Co–t_2g bands. The fundamental absorption edge was observed at 2.32 eV. The films annealed at 1,023 K in a controlled oxygen environment exhibit (104) out plane texture with large grains. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006     

Laser dye stability. Part 5

Photodegradation parameters that relate bleaching and absorption at the lasing wavelength λ_l have been examined for over 30 different coumarin and quinolone laser dyes in a number of solvents. Quinolone dyes were found to bleach faster than the coumarin dyes. The effect of chemical substituents was found to affect bleaching of the coumarin dyes only to a small (20%) extent in ethanol. The major effect of chemical substituents was in the conversion of a dye to products absorbing at λ_l. Effects of solvent, cover gas, and changes in fluorescent quantum yields are discussed. Of particular interest is the photodegradation parameterA, the ratio of the percent absorption at λ_l to the total input energy per dm³. Combined with τ, the total input energy per dm³ required for a laser to reach half its original intensity, it was found thatAτ=1.2±0.9 for all of the dyes independent of dye concentration in all of the solvents tested. It appears that where bleaching of the dye is only of the order of 10–20%, the absorption at λ_l is 1.2% when our dye laser has reached one-half of its initial output. It is consequently possible to estimate τ values of new dyes by the use ofA terms through the relationshipA ₁τ₁=A ₂τ₂ where τ₁ of Dye 1 has been calibrated in the same dye laser system.     

Effect of electron bombardment on a phase-inhomogeneous nanoscopic structure and the fundamental absorption spectrum of single-crystal CuO

The optical absorption spectra of single-crystal CuO bombarded with 5-MeV electrons exhibit reduced absorption in the region of the fundamental absorption edge at 17 eV, which corresponds to the b _1g →e _u transition with charge transfer in CuO ₄ ⁶⁻ . A simultaneous increase in absorption is observed in the middle infrared and in the region of high energies centered on 2.9 eV. The experimental results obtained are interpreted in terms of ideas on the phase-inhomogeneous nano-agglomorated structure in copper oxides that occurs as a result of the nucleation of polar centers (CuO ₄ ⁵⁻ , CuO ₄ ⁷⁻ ) under electron bombardment. Fiz. Tverd. Tela (St. Petersburg) 39, 2141–2146 (December 1997)     

Permittivity and conductivity of triglycine sulfate films on Al/SiO2 and α-Al2O3 substrates

Triglycine sulfate (TGS) films have been prepared by evaporation from a saturated aqueous solution on substrates of fused quartz coated by a layer of thermally deposited aluminum (Al/SiO₂) and white sapphire (α-Al₂O₃) on whose surface interdigital electrodes have been deposited by photolithography. The TGS films have a polycrystalline structure made up of blocks measuring 0.1–0.3 mm (Al/SiO₂) and 0.1 × 1.0 mm (α-Al₂O₃). The polar axis in the blocks is mostly confined to the substrate plane. The temperature dependences of the capacitance and dielectric losses normal to and in the film plane have maxima at the temperature coinciding with that of the ferroelectric phase transition in a bulk crystal, T _c . The low-frequency conductivity G in TGS/Al/SiO₂ structures displays a frequency dispersion described by the relation G ∼ ω ^s (s ≈ 0.82). The conduction can be tentatively ascribed to the hopping mechanism involving localized carriers with a ground state energy of 0.8–0.9 eV. At temperatures above and below T _c , the low-frequency conductivity in TGS/α-Al₂O₃ films operates through a thermally-activated mechanism with an activation energy of 0.9–1.0 eV. At the phase transition, an additional contribution to conductivity appears in TGS/α-Al₂O₃ films with a dispersion G ∼ ω^0.5, which can be associated with domain-wall relaxation.