K+-Na+和Ag+-Na+两步离子交换技术制作玻璃基光波导研究

利用K+-Na+和Ag+-Na+两步离子交换得到掩埋型光波导.该方法抑制Ag+-Na+离子交换时产生的Ag+微粒,降低波导损耗,增加波导截面的圆对称性,从而提高光波导器件的性能.用该方法制作了1×8光功分器,其插入损耗平均为10.9 dB.     

新型1×N多模干涉分束器的三维设计与模拟

相比于传统的1×N对称型多模干涉（Mult-Mode Interference,MMI）分束器设计,提出了一种新型埋入式弱限制光波导分束器件.它的干涉区及输入输出波导采用倒锥形式,器件尺寸减小,且不均匀性与附加损耗也减小.以1×4的对称型MMI分束器为例,当只对干涉区采用倒锥形结构后,在TE偏振中心波长为1.55 μm时,器件长度减小了500 μm,均匀性增加了0.131 dB,而附加损耗仅增加了0.02 dB,波长响应较传统设计增加了40 nm.在此基础上,又在输入输出臂上也各增加倒锥形结构后,相比于传统设计附加损耗减小了0.02 dB,均匀性增加了0.139 dB,器件长度减小了500 μm.改进后的器件具有优越的容差性.器件采用掺氟型聚合物材料进行优化设计,通过在合理范围内偏离输出波导位置,使输出光强达到最大值.     

仅有相邻波导耦合的定向耦合器的一般解法

应用切比雪夫多项式 ,求得了仅有相邻波导耦合的 (N +1)× (N +1)定向耦合器在弱耦合、无损耗和忽略正交偏振模场分量间耦合的情形下波导耦合方程的通解。列出线形排列 2× 2 ,3× 3,4× 4定向耦合器的解的表达式 ,并对环形排列 3× 3定向耦合器的解作了较详细的分析     

用于波导阵列——光纤阵列自动对接的多目标演化算法的研究

开发设计了一种新的列阵自动对接方法,该方法将多目标演化法导入光纤—光波导列阵—光纤列阵的自动对接,并行操作次数较常规遗传法大幅减少.数值仿真表明,对于模场非对称因子为0.4%的单模波导列阵与光纤列阵的双芯对接,能实现0.04 dB的平均端面耦合损耗.用于1×8波导分支耦合器与通道间距误差在0.35 μm以内的光纤列阵对接,自动耦合仿真达到了小于0.1 dB的平均端面耦合损耗,最大值与最小值的差小于0.06 dB.     

1×16多模干涉型GaAs光功分器的研制

设计并制作了一种能直接与通信用标准单模光纤阵列相耦合的 1× 16多模干涉型光功分器。其输入、输出单模波导采用离散谱折射率法优化设计 ,获得了脊宽为 3μm、脊高为 2 .9μm和理论传输损耗约为 0 .0 2 8dB cm的单模脊形光波导。分析表明 ,这种深刻蚀多模干涉型光功分器具有较大的制作容差性、较宽的工作带宽以及几乎可忽略的极化依赖性。测试结果表明 ,器件实现了 1× 16光功分器功能     

数码照相法测量离子交换平面光波导损耗特性

利用数码相机对离子交换平面玻璃光波导传输线进行数字成像,根据传输线上的光强分布拟合出光强传输衰减曲线,计算出波导的传输损耗.对光波导进行退火处理,研究了波导退火前后的传输损耗特性.退火后0阶模式下传输损耗由2.148 9 dB·cm-1降为0.746 0 dB·cm-1.结果表明,波导的传输损耗是随着模阶数的增加而递增,适当的退火处理明显改善了离子交换波导的质量.     

聚合物微环谐振波分复用器传输特性的理论分析

根据耦合模理论,给出了1×N信道微环谐振波分复用器(MRRWM)的光强传递函数通用公式,并分析了微环谐振波分复用器的传输特性。利用参量优化结果,在中心工作波长约为 1.55μm、波长间隔约 5.6 nm的情况下,对1×8信道硅基聚合物微环谐振波分复用器进行了数值模拟。计算结果表明,该器件具有以下优良的性能:分波光谱准确,自由光谱区约为18 nm,对于半径10μm以上的微环弯曲损耗很小,且器件的插入损耗主要由波导的传输损耗决定,振幅耦合比率为0.2时对应的每条竖直输出信道的插入损耗在0.57 dB以下,信道间的串扰小于-18.5 dB,输出谐振峰3 dB带宽可达0.25 nm,最小背景光的强度约为3.8×10-4。     

1.3μm偏振无关半导体光放大器单片集成模斑变换器

用金属有机化学气相外延生长并制作了 1.3μm脊型波导偏振无关半导体光放大器集成模斑变换器 ,器件有源区为同时采用压应变量子阱和张应变量子阱的混合应变量子阱结构以获得TE和TM偏振模式的增益平衡 ,模斑变换器采用一种新型脊型侧向锥形波导结构 ;集成模斑变换器的半导体光放大器远场发散角为 12°× 15° ,接近圆形光斑 ,与平头标准单模光纤耦合损耗为 - 2 .6dB ,在水平和垂直方向上的 - 1dB耦合对准容差分别为± 2 .3μm和± 1.6 μm ;在 2 0 0mA偏置电流下 ,半导体光放大器小信号增益近 2 4dB ,在 12 80～ 1340nm波长范围内偏振灵敏度小于 0 .6dB。     

一种改进的2×2 SOI Mach-Zehnder热光开关

本文设计并制作了基于强限制多模干涉耦合器的2×2 SOI马赫-曾德热光开关.这种光开关采用了深刻蚀结构的多模干涉耦合器和输入/输出波导,较大地提高了干涉耦合器的性能并减少了连接耦合损耗.同时,在调制臂区域采用浅刻蚀结构,保持其单模调制状态.深刻蚀多模干涉耦合器具有优越的特性,在实验中测得不均衡度只有0.03 dB,插入损耗－0.6 dB.基于这种耦合器的新型热光开关,其插入损耗为－6.8 dB,其中包括光纤-波导耦合损耗－4.3 dB,开关时间为6.8 μs.     

新型低损耗氧化硅Y分支光波导

提出了一种新型的Y分支光波导结构。该Y分支波导由一个人射波导,一个过渡波导和一对出射波导组成。过渡波导用于改善放射基模与出射偶对称模之间的场分布匹配,有效地提高了功率耦合效率,降低了分支耦合损耗,波束传播法（BPM）数字模拟计算表明,该结构在1．31μm和1．55μm波长下可分别达到0．041dB和0．052dB分支耦合损耗。实验中用等离子化学汽相沉积（CVD）技术制备了SiO2分支波导样品,在上述两波长下分别测得分支耦合损耗为0．08dB和0．09dB,基本达到了设计指标。     

Realization of MMI Power Splitter by UV-light Imprinting Technique Using Hybrid Sol-Gel SiO2 Materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-inorganic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550nm, respectively. The tested results show more circular mode profiles due to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss （0.088 dB/cm） and the 1× 2 MMI power splitter exhibits uniform outputs, with a very iow splitting loss of 0.029 dB at 1549nm.     

Low-loss, compact waveguiding with TE mode in metal/dielectric waveguides for planar lightwave circuit

We propose a low-loss metal/dielectric waveguide for compact planar lightwave circuit. The basic waveguide structure is a metal-defined high-index-contrast strip waveguide based on silicon/silica. As the guide is designed for TE single mode waveguiding, extremely low propagation loss (e.g. <0.04 dB/cm), very low bend loss (e.g. 0.0043 dB/90°-turn) and small waveguide pitch of zero-crosstalk are theoretically achievable, and can be further improved by compromising with component size and density. Examples of multi-bends and device integration are demonstrated with numerical simulations. The proposal is compatible with silicon technology and appealing for development of silicon-based planar lightwave circuit.     

Numerical simulation of low loss silicon photonic wire waveguide with multiple cladding layers

A different silicon photonic wire waveguide is proposed, which uses multiple thin cladding layers in order to reduce the index contrast between core and cladding interface. The reduced index contrast in the proposed waveguide has led to reduction in the scattering losses by 37% as compared to silicon wire waveguide for 400 nm × 220 nm waveguide dimension. The proposed waveguide has shown significant reduction in bending losses. It offers the bending loss of 0.0118 dB at the radius of 1 μm and 0.0063 dB for a radius of 2 μm at 1.55 μm wavelength as compared to 0.086 and 0.013 dB at the radius of 1 and 2 μm, respectively, offered by silicon photonic wire waveguide at 1.5 μm wavelength. The use of polymer material as top cladding layer resulted in decreasing the sensitivity of effective index against temperature for the designed waveguide by a factor of 2 as compared to silicon wire waveguide.     

基于TE-TM模变换的新型相位自补偿磁光隔离器

讨论了由45°非互易模变换器与45°互易模变换器构成波导型光隔离器时两者之间须满足的条件,并由此设计了一种新型的相位自补偿磁光隔离器. 利用全矢量有限差分光束传输法对隔离器进行仿真,得到了插入损耗为-12dB,隔离度为-34dB的结果. 关键词： 集成光学 磁光隔离器 非互易模变换器 互易模变换器     

All polymer asymmetric Mach-Zehnder interferometer waveguide sensor by imprinting bonding and laser polishing

We present an all polymer asymmetric Mach–Zehnder interferometer(AMZI) waveguide sensor based on imprinting bonding and laser polishing method. The fabrication methods are compatible with high accuracy waveguide sensing structure. The rectangle waveguide structure of this sensor has three sensing surfaces contacting the test media, and its sensing accuracy can be increased 5 times compared with that of one surface sensing structure. An AMZI device structure is designed. The single mode condition, the length of the sensing arm, and the length deviation between the sensing arm and the reference arm are optimized. The length deviation is optimized to be 19.8 μm in a refractive index range between1.470 and 1.545. We fabricate the AMZI waveguide by lithography and wet etching method. The imprinting bonding and laser polishing method is proposed and investigated. The insertion loss is between-80.36 dB and-10.63 dB. The average and linear sensitivity are 768.1 d B/RIU and 548.95 dB/RIU, respectively. And the average and linear detection resolution of the sensor are 1.30×10~(-6) RIU(RIU: refractive index unit) and 1.82×10~(-5) RIU, respectively. This sensor has a fast and cost-effective fabrication process which can be used in the cases of requiring portability and disposability.     

过模圆转弯波导的设计与实验

 研究了一种新型的过模圆转弯波导,可实现圆波导TM₀₁模的转弯传输。介绍了这种过模圆转弯波导的基本原理：即沿转弯平面插入一块金属板,将圆波导转换为两个半圆波导。圆波导TM₀₁模在半圆波导中转换为半圆波导TE₁₁模,经转弯传输后,重新将半圆波导TE₀₁模转换为圆波导TM₀₁模,从而实现圆波导TM₀₁模的转弯传输。基于这一原理设计了一个中心频率为2.856 GHz、转弯45°的过模圆转弯波导,并进行了数值模拟和实验研究。实验结果表明：其转弯半径为123.7 mm,转弯半径较小;在中心频点2.856 GHz处,传输损耗约为0.247 dB,驻波系数为1.217;在2.75～2.95 GHz的频率范围内传输损耗小于0.53 dB,驻波系数小于1.34。     

Active semiconductor optical switches with blue-shifted channel waveguides

This paper presents a theoretical design study of active optical switches constructed from III-V semiconductor multiple-quantum-well waveguides. New designs are given for 4 × 4 matrix switches, 1 × 4 tree switches, and 4-delay optical transversal filters. The designs feature ～ 0 dB insertion loss and ～ 30 dB crosstalk isolation. Low injection currents are predicted because pumping is eliminated on ～ 70 percent of the channel waveguide area by an induced-disorder treatment that blue-shifts the material's absorption edge. The active networks also feature etched facet reflectors that facilitate the dense packing of guides.     

电光聚合物波导中的锥形结构

提出并设计了一种基于电光聚合物的锥形波导,可用于单模光纤与电光聚合物波导器件之间的连接.锥形波导中采用了宽度锥形和折射率锥形结构.宽度锥形采用劈形形状,通过宽度和折射率的缓慢变化实现模场转换.劈形形状的宽度锥形具有较小的损耗且易于制作,折射率锥形可采用灰度掩膜光刻技术制作.研究了锥形波导的传输损耗与锥形波导的长度、波导宽度和厚度、材料吸收损耗等参数的关系及其优化,分析了锥形波导中的功率传输、模场分布与模式转换效率.结果显示锥形波导的传输损耗小于0.37 dB,光纤-波导-光纤的连接损耗优于1.62 dB,对插入损耗的改善达到8.78 dB,模场转换效率达到了83.7%.     

跑道形玻璃波导谐振腔滤波器的研制

采用Ag+-Na+离子工艺,在K9玻璃上制备了跑道形波导谐振腔滤波器.测试得到该滤波器自由光谱范围为FSR=0.177 nm,对比对为Cr＝7.5 dB.同时分析得到耦合器的耦合系数为κ=0.916,耦合器和环形腔的损耗因子分别为δ=0.55,γ=0.48.耦合器的两波导几乎相连、条波导边缘不规则和一次离子交换波导表面缺陷是造成该波导滤波器具有较大损耗的主要原因.通过改进工艺技术降低波导损耗,该滤波器可以用于光通信、传感等领域,也可与其它波导结构相结合实现新的功能.