EPR measurements on chromium doped GaAs,GaP and InP

EPR measurements have been made on chromium doped GaAs samples at 4.2 K. An n-type sample doped with chromium and silicon was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr⁺ (3d⁵) was detected, although the Cr_s²⁺ spectrum was observed. The generally accepted assignment of a spectrum to Cr_s⁺ for photoexcited samples must therefore be revised. An isotropic resonance with g = 2 is observed in p-type chromium doped GaAs, GaP and InP but it is still not clear whether this is due to Cr_s⁴⁺ or interstitial Cr_i⁺ (3d⁵).     

Field-ion microscopy of GaAs and GaP

Clean surfaces of GaAs and GaP were studied by field-ion microscope (FIM). Field-ion images with ordered surfaces were first obtained in pure hydrogen, neon-50% hydrogen and pure neon gases at 78 K, by using channeltron electron multiplier arrays (CEMA). The field-ion images of GaAs were quite similar to those of GaP with respect to the surface structure and the image contrast. They showed the anisotropies of the ion emission and the surface structure between the [111] and $\text{[}\text{1}\text{1}\text{1}\text{]}$ orientations. Ring steps expected from a spherical surface were observed on the (111) and {100} planes, but not on the $\text{[}\text{1}\text{1}\text{1}\text{]}$ and {110} planes. The regional brightness of the FIM patterns was discussed in terms of the Knor and Müller model and the atomic and electronic structures of the surface. The image field of these crystals was much lower than that of metals usually used in FIM. For example, the image field strength for the hydrogen and GaAs system was about 1.1 V/Å. The reduction of the field necessary to image was also discussed in terms of the field penetration effect.     

Atom-probe field-ion microscopy of GaAs and GaP

The atom-probe field-ion microscope (atom-probe FIM) was applied for the first time to GaAs and GaP which belong to the III–V compound semiconductors. The general character of the pulsed field-evaporation of GaAs and GaP was quite similar. Ga field-evaporated predominantly in the form of singly charged ions. As and P also field-evaporated mainly as singly charged ions, but their abundances were small compared with Ga⁺. It appears that As (or P) atoms can field-evaporate more easily in the form of AsO⁺ (or PO⁺) in the presence of oxygen on the surface. In all experiments, GaAsⁿ⁺ and GaPⁿ⁺ were rarely detected. After chemical etching the surfaces were covered with oxide films and various oxide ions were detected. The abundance of oxide ions dramatically decreased after field evaporation in hydrogen. No distinct difference between the 〈111〉 orientations of these materials which have zinc-blende structure could be observed. Most of the experimental results obtained were explained in terms of the existing theory of field evaporation. It was concluded that field penetration effects have a considerable influence on the field evaporation processes of these materials as well as on the field ionization processes.     

ENDOR investigation of tellurium doped GaP

The hyperfine interactions of⁶⁹Ga,⁷¹Ga and³¹P nuclei with donor electrons in tellurium doped GaP have been measured by means of electron nuclear double resonance (ENDOR). Three groups of neighbour nuclei have been identified. Values of |(r)|², r ^–3, and the electric field gradient at the sites of the neighbour nuclei have been determined, and compared with those from ENDOR measurements on sulphur doped GaP.     

ENDOR investigations of Ge doped GaP

ENDOR measurements of germanium doped gallium phosphide show a SHF-interaction with one neighbour shell strong enough to resolve the splitting of lines caused by the mutual interaction of the different nuclei of the same shell. The symmetry and hyperfine parameters of four other neighbour shells have also been determined.     

ENDOR investigations of sulphur doped GaP

From ENDOR measurements on GaP:S the symmetries and hyperfine parameters of four groups of neighbour nuclei have been investigated. The values of ||², r ^–3 and the electric field gradient at the sites of the neighbour nuclei have been determined.     

Anion antisite defects in GaAs and GaP

The electronic properties of anion antisite defects and the related ideal cation vacancies are calculated based on tight-binding Hamiltonians and using a novel recursion method. For the antisite defects symmetric A₁ states are found in the upper part of the fundamental gaps, and for the ideal vacancies T₂ states are found in the lower part of the gaps. These results for antisite defects compare favorably with recent ESR experiments.     

Temperature modulated photoluminescence of nitrogen doped GaP

The temperature modulated photoluminescence of nitrogen doped GaP is analysed. It is shown that this technique can be used to gain information on the exciton excited states and to observed the dominant temperature dependent effects in the recombination mechanism.     

Distribution of electric field in GaAs diffused structures doped by iron or chromium

An analysis based on numerical calculations has been done for the distribution of an electric field in GaAs diffused by chromium or iron-doped structures. First, a calculation has been carried out for the non-uniform impurity distribution using experimentally measured Fe and Cr profiles. It is shown that a ν-n-junction is formed in chromium-doped structures, and a π-n-junction is formed in iron-doped ones. A conclusion is made that these junctions are graded. V. D. Kuznetsov Siberian Physical-Technical Institute, Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 43–48, March 1999.     

Implantation and diffusion of 73As in GaAs and GaP

Self-diffusion on the As sublattice in intrinsic GaAs and foreign-atom diffusion on the P sublattice in intrinsic GaP were investigated in a direct way by As tracer diffusion measurements using the radioisotope ⁷³As. For this purpose ⁷³As was implanted in both materials at the ISOLDE facility of CERN. Then diffusion annealings were performed followed by serial sectioning and counting of the radioactivity in each section. The resulting profiles were simulated within a computer model which accounts for the observed loss of tracer to the diffusion ambient. The so-obtained diffusion coefficients for As in GaAs and GaP are compared with existing diffusivities in these compounds. This revised version was published online in July 2006 with corrections to the Cover Date.     

Radiation damage by implanted ions in GaAs and GaP

Abstract

The production of lattice disorder in GaAs and GaP by Te ions up to 40 keV has been investigated. For GaAs the build up of damage with implanted ion dose is linear until a saturation level is reached. For Gap, two linear regions are evident; a slow build up of damage to ?15 per cent of the saturation level, followed by a faster rate of increase up to the final 100 per cent level. Radiation annealing, for GaP samples, both by the heavy ion beam during implantation and by the helium beam during back-scattering measurements has been observed. The annealing temperatures required for re-ordering the lattice depend on the percentage of damage present. Samples damaged up to the saturation level require annealing at ?500°C, whilst 300°C is sufficient for samples damaged to ?50 per cent of the saturation value.     

Active mode-locking of lasers using GaAs and GaP picosecond switches

Active mode-locking of coumarin dye lasers has been achieved using either a GaAs or GaP picosecond high voltage switch to drive an intra cavity Pockels cell in a Q modulation technique. Pulses of 30–50 ps were generated with a peak power of ≈500 kW, while pulses as short as 20 ps were observed. The method can be generally applied to various laser systems over wide spectral ranges.     

Ion implantation of sulphur into GaAs,GaP and ge monocrystals

The possibility of using ion implantation to form high concentration junctions in semiconductors has been explored for the specific case of sulphur in GaAs, GaP and Ge. The effects of ion dose, ion energy, crystal orientation and target temperature have been investigated by means of radiotracers and sectioning techniques.

It is shown that high concentration junctions can be formed using an incident ion having high electronic stopping cross-section and implanted along the <110< channeling directions of the crystals. A large increase in junction concentration may be obtained when the GaAs and GaP crystals are maintained at 150 °C during the implantation process, but this is not the case with Ge. Rutherford back-scattering of 1 MeV He⁺ ions has been used to measure the ion-bombardment induced damage in the crystals and to show how this damage can be annealed by heating the crystal during the implantation. The annealing, at temperatures up to 150 °C, is most effective in GaAs and least effective in Ge.     

Photoluminescence spectra of doped GaAs films

We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2×10¹⁸ cm^-3 and the film thickness is in the range of the penetration length of the PL excitation laser. PACS 78.20.-e; 78.55.Cr; 78.66.Fd     

Photoluminescence of Mn doped epitaxial GaAs

We have measured the near band edge photoluminescence of Mn doped liquid phase epitaxially grown GaAs. The photoluminescence spectra at 2°K shows, at low excitation intensities, a structure of up to eight sharp peaks (widths .2 to 1.0 meV) between 1.517 and 1.512 eV, besides the lower energy bands near 1.41 eV due to the deep Mn acceptor level and the usual donor-acceptor bands around 1.47 eV. Attempts to relate the sharp lines to the Mn electronic states, introduced by doping, were unsuccessful. It is our belief that the presence of this particular impurity in our samples allows for whatever states are responsible for the sharp line structure, to reveal themselves in the emission spectrum. A most unespected result is that near band edge sharp line luminescence is observed for impurity concentration as high as 10¹⁸cm^-3.     

Photoluminescence of chromium doped and chromium diffused GaAs

Photoluminescence (PL) measurements on the 0.84 eV Cr-related PL line have been made on both Cr diffused and Cr doped GaAs. In the former case, no luminescence is observed below a diffusion temperature of 800°C. The form of the PL spectrum is found to be the same, independent of whether the majority donor species is group IV(Si) or group VI(Te). PL profiling experiments are used to show that the PL intensity is proportional to the concentration of chromium. Although it is possible that a group VI donor is involved, the insensitivity of the spectrum to different donor species and its linear dependence on chromium concentration suggest that the luminescent centre is a [Cr_Ga-V_As] complex.Measurements on growth doped material are typified by the low intensity near the seed and the scatter in PL intensity in samples where the measured [Cr] is nearly constant. By comparison with the results on the diffused material, the anomalously low PL intensity near the seed end is deduced to be indicative of the high crystal stoichiometry in this region.     

Luminescence of Pr,Nd and Yb ions implanted in GaAs and GaP

New experimental data on luminescence spectra of Pr and Nd ions implanted into GaAs and GaP crystals and the results on luminescence kinetics of Nd doped GaP are presented. The results show that RE ions form different complexes in measured samples.