Anisotropy of the thermal conductivity and electrical resistivity of the SiC/Si biomorphic composite based on a white-eucalyptus biocarbon template

The thermal conductivity κ and electrical resistivity ρ of a cellular ecoceramic, namely, the SiC/Si biomorphic composite, are measured in the temperature range 5–300 K. The SiC/Si biomorphic composite is fabricated using a cellular biocarbon template prepared from white eucalyptus wood by pyrolysis in an argon atmosphere with subsequent infiltration of molten silicon into empty through cellular channels of the template. The temperature dependences κ(T) and ρ(T) of the 3C-SiC/Si biomorphic composite at a silicon content of ～30 vol % are measured for samples cut out parallel and perpendicular to the direction of tree growth. Data on the anisotropy of the thermal conductivity κ are presented. The behavior of the dependences κ(T) and ρ(T) of the SiC/Si biomorphic composite at different silicon contents is discussed in terms of the results obtained and data available in the literature.     

Linear expansion coefficient of the SiC/Si biomorphic composite

In the temperature range 100–650 K, the linear expansion coefficient β was measured for the SiC/Si biomorphic composite, a new cellular ecoceramic fabricated from a porous cellular carbon matrix prepared through pyrolysis of wood (white eucalyptus) in an argon ambient with subsequent infiltration of molten Si into the channels of the matrix and the formation of 3C-SiC. The SiC/Si samples studied had an “excess” ～30% volume concentration of Si and a porosity of ～13–15%. The measurements were conducted on samples cut along (β_∥) and across (β_⊥) the tree growth direction. The measured values of β(T) of SiC/Si are compared with literature data available for the linear expansion coefficients of Si and 3C-SiC.     

Thermal and electrical properties of a white-eucalyptus carbon preform for SiC/Si ecoceramics

The thermal conductivity κ and electrical resistivity ρ of a white-eucalyptus cellular carbon preform used to fabricate silicon-carbide-based (SiC/Si) biomorphic ceramics have been measured in the 5-to 300-K temperature interval. The carbon preform was obtained by pyrolysis (carbonization) of white-eucalyptus wood at 1000°C in an argon ambient. The κ(T) and ρ(T) relations were measured on samples cut along the tree growth direction. The experimental data obtained were processed.     

Low energy electron diffraction beam profiles and phase transition at Si(111)-7 X 7 surface

Angular profiles of low energy electron diffraction (LEED) beams from Si(111)-7 × 7 are measured for various crystal temperatures T near the phase transition with apparent critical temperature T_c ≈ 1140 K. From analyses of the profiles it is concluded that (1) long range superstructure order persists for T up to at least 50 K above T_c and (2) with increasing T the correlation length characterizing the short-range order peaks for T ≈ T_c ? 100 K and decreases rapidly for T >T_c. Conclusion (1) is discussed with reference to a dislocation network model of Si(111)-7 × 7 reconstruction.     

Anisotropy of electric resistivity of Sapele-based biomorphic SiC/Si composites

The electrical resistivity of Sapele-based biomorphic SiC/Si materials was measured in a wide temperature range from 10 K to room temperature. The samples were fabricated by the reactive infiltration of molten silicon into a carbonized Sapele (African Entandrophragma Cylindricum) wood preform. All the samples studied contained residual Si (10–35 wt %). It was found that the resistivity-temperature (ρ(T)) dependences have semimetallic behavior which becomes very close to linear metallic behavior at 100 < T < 300 K. The obtained values of resistivity were quite low (ρ ≈ 0.002–0.02 Ω cm) and showed strong anisotropy: the resistivity along the wood growth axis was several times lower than that in the perpendicular direction. The extent of this anisotropy was in correlation with the amount of residual Si (and, hence, with the amount of residual porosity) in a sample. The resistivity perpendicular to the wood growth axis drastically increased with the Si content, whereas the resistivity parallel to it was practically independent of the Si content. It is suggested that the presence of residual carbon in the samples and carrier scattering at SiC/Si interphases could determine the observed character of ρ(T) dependences.     

Electrical and thermoelectric properties of the SiC/Si biomorphic composite at high temperatures

The electrical resistivity ρ and the thermopower coefficient α of a SiC/Si biomorphic composite fabricated from a porous carbon matrix [prepared through pyrolysis of wood (white eucalyptus)] by infiltrating molten Si into the empty channels of the matrix were measured in the temperature ranges 100–950 and 100–750 K, respectively. Silicon reacts chemically with the carbon of the matrix to produce 3C-SiC, which, in combination with the excess Si unreacted with carbon, forms the SiC/Si biomorphic composite. The SiC/Si samples studied had a concentration of “excess” Si of ～30 vol % and a porosity of ～13–15 vol %. Measurements of ρ were carried out on samples cut either along (ρ_∥) or across (ρ_⊥) the tree growth direction, and α was measured on a sample cut along the tree growth direction.     

Isospin dependence of the nuclear level width in the compound nucleus 30P

The excitation functions of ²⁹Si(p, α₀)²⁶Al, ²⁹Si(p, α₁)²⁶Al and ²⁹Si(p, α₂)²⁶Al were measured with high beam energy resolution in order to determine the isospin dependence of the nuclear level width of the composite nucleus, ³⁰P, at an average excitation energy of 19.6 MeV. From an auto-correlation analysis of these excitation functions, the level widths of the T_< = 0 and T_> = 1 isospin states are determined as 81 ± 17 keV and 104 ± 35 keV, respectively. An analysis including isospin mixing is also performed. With the aid of the statistical theory of nuclear reactions, the coherence energies are used to deduce the relative densities of two isospin states. The predictions of the Fermi gas model of level densities including isospin are in good agreement with the obtained results.     

Investigation of 28Si levels with the (α, γ) and (p, γ) reactions

Particle energies have been measured for resonances in the ²⁷Al(p, γ)²⁸Si and ²⁴Mg(α, γ)²⁸Si reactions with an accuracy of 0.5 × 10^?4 and 1 × 10^?4, respectively. The E_p = 991.88 ± 0.04 keV²⁷Al(p, γ)²⁸Si resonance served as calibration point. From these data the Q-value of the reaction ²⁷Al(p, α)²⁴Mg has been determined as 1600.14 ± 0.21 keV. Excitation energies of ²⁸Si levels have been measured with the ²⁷Al(p, γ)²⁸Si reaction; the reaction energy is Q = 11584.5 ± 0.4 keV.Of 33 resonances observed in the ²⁴Mg(α, γ)²⁸Si reaction (E_α = 1.5–3.8 MeV), energies, strengths and γ-ray decay have been measured; five of these resonances had not been reported previously. The γ-ray angular distribution measurements at three resonances yield the resonance J^π values and the mixing ratios of the strongest transitions involved in the decay. The 10.38 MeV level has J^π = 3⁺, T = 1. The arguments on which T-assignments can be based are critically reviewed. These arguments are used to assign T = 1 character to ¹⁹ states of ²⁸Si.     

Thermal conductivity of high-porosity cellular-pore biocarbon prepared from sapele wood

This paper reports on measurements (in the temperature range T = 5–300 K) of the thermal conductivity κ(T) and electrical conductivity σ(T) of the high-porosity (～63 vol %) amorphous biocarbon preform with cellular pores, prepared by pyrolysis of sapele wood at the carbonization temperature 1000°C. The preform at 300 K was characterized using X-ray diffraction analysis. Nanocrystallites 11–30 Å in ize were shown to participate in the formation of the carbon network of sapele wood preforms. The dependences κ(T) and σ(T) were measured for the samples cut across and along empty cellular pore channels, which are aligned with the tree growth direction. Thermal conductivity measurements performed on the biocarbon sapele wood preform revealed a temperature dependence of the phonon thermal conductivity that is not typical of amorphous (and X-ray amorphous) materials. The electrical conductivity σ was found to increase with the temperature increasing from 5 to 300 K. The results obtained were analyzed.     

Conduction mechanism of metal-TiO2–Si structures

The conduction model has been proposed for the metal-TiO₂–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO₂ target and annealing in the air at temperatures T?=?800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T?=?283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.     

Transverse energy distributions in Si-nucleus collisions at 10 GeV/nucleon

Transverse energy distributions have been measured for collisions of 10 GeV/nucleon Si with targets of Al, Cu and Pb using a combination of a NaI wall and a uranium based sampling calorimeter. The measured cross sectionsdσ/dE _T anddE _T /dη are consistent with full stopping and an increase, with increasing values ofE _T , of energy flow into large angles.     

Specific heat of A-15 Nb3Si produced by explosive compression

The specific heat from 1.2 to 23 K has been measured on a new high T_c superconductor, A-15 Nb₃Si. The sample was prepared by explosive compression and has an onset of bulk superconductivity at 18.0 K, with a transition width of 0.7 K. The density of states for pure A-15 Nb₃Si implied from the specific heat data is 0.94 ± 0.20 states/eV-atom, ΔC/γ T_c is 2.0 ± 0.2.     

Electron spin resonance of ion-implanted Si:P systems

The ESR of Si:P and (Si:P):Sb systems made by ion implantation has been observed. An anomalous line-broadening appears in the (Si:P):Sb system, and is considered to be due to the large spin-orbit interaction of Sb donor impurity. The effective spin-lattice relaxation time, T_1eff, of both the systems is found to be dominated by a thin layer with the shortest relaxation time T₁(χ).     

Excitation of high-spin particle-hole states in A = 28 nuclei by 27Al(α, t) and (α, 3He) reactions

The ²⁷Al(α, t) and (α, ³He) reactions have been measured at E_α = 64.5 MeV. The experimental angular distributions were analyzed by the exact finite-range DWBA calculations assuming a nucleon stripping mechanism. The distributions of spectroscopic strengths for the single-particle transitions with transferred angular momenta l = 0, 1, 2, 3 and 4 have been obtained. The strengths for the transitions to the stretched 6^? states in ²⁸Si and ²⁸Al are compared to those obtained from inelastic scattering on ²⁸Si. The present results show no distinctive differences in the structures for 6^?T = 0 and 1 states in ²⁸Si such as are observed in proton and pion inelastic scattering on ²⁸Si.     

An electrostatic force microscope study of Si nanostructures on Si(1 0 0) as a function of post-annealing temperature and time

The evolution of Si nanostructures induced by Ar⁺ ion sputtering on Si(1 0 0) was studied with electrostatic force microscopy (EFM) as a function of post-annealing temperature (T = room temperature-800 °C) and time (t = 0-160 min). The post-annealing of the nanostructure was conducted in vacuum. It was found that with T increasing, the EFM contrast degraded steadily and became nearly undetectable at T = 800 °C; with t increasing at T = 800 °C, the EFM contrast fell down steadily as well. However, the surface morphology and roughness were much less affected after annealing. The results suggest that the as-formed Si nanostructures may not be epitaxially grown on Si(1 0 0) substrate as claimed before. A plane capacitance model supported this conclusion.     

The adsorption of PH3 on the Si(111)-(7 × 7) surface: an example of autocatalytic dissociative chemisorption

The dissociative chemisorption of phosphine, PH₃, on the Si(111)-(7 × 7) surface has been examined employing supersonic molecular beam techniques. The initial probability of reaction, S_R,0, has been found to be sensitive to substrate temperature, T_s, where S_R,0 increases sharply by approximately a factor of 4–5 as T_s is increased above 800°C, which corresponds well with the (7 × 7) ↔ “(1 × 1)” phase transition. The reaction probability, S_R, measured as a function of dose for PH₃ reacting on Si(111)-(7 × 7) at T_s < 800°C, exhibits a dramatic increase as the surface is exposed to the PH₃ molecular beam. This unique autocatalytic behavior is consistent with a mechanism in which submonolayer coverages of P(a) are capable of lifting the (7 × 7) reconstruction thus giving rise to a more reactive “(1 × 1)-like” phase. The reaction probability of Si₂H₆ on Si(111)-(7 × 7) is also observed to pass through a maximum with increasing P(a) coverages, and can be explained by considering similar changes in surface structure and reactivity.     

Temperature dependence of effective mobility edge and inelastic scattering time in silicon MOS inversion layers in strong magnetic fields

Temperature (T) dependence on Hall conductivity (σ_xy) in Si MOS inversion layers measured in 15 T at T=1.4?10 K is investigated by comparing dσ_xy/dN_s, N_s electron concentration, to the calculation based on an effective mobility edge (E_c) model. Temperature dependence of inelastic scattering time is discussed in connection to the T-dependence of E_c.     

Electric field gradients and band structure for V3Si

The electric field gradient (e.f.g.) tensor measured for V₃Si is analysed in terms of the electronic band structure. This crystal undergoes a martensitic transformation at T_m = 21.3°K. Above T_m the crystal is cubic and the point symmetry of the vanadium atoms is tetragonal. Below T_m the crystal becomes tetragonal and nuclei which sit on chains orthogonal to the axis of symmetry “see” orthorhombic neighbourhood. The experimental data include: (i) The value of the axial part of the e.f.g. (q) measured in the cubic phase, (ii) The asymmetry part of the e.f.g. tensor measured in a single crystal below T_m (iii) The difference of q measured for orthogonal chains in the tetragonal phase. All this data could not be explained by the well-known model of Watson-Gossard and Yefet. Here, a full analysis is given, in terms of an approximate LCAO band structure calculation. It is found that assuming the inaccuracies of the calculated band structure are at most 50 m Ry, the peak in the density of states which “falls” on E_F is X₃ (δ₂ + π). In this case all the experimental data may be explained to within an accuracy of a factor of 2 to 3.     

Evaluation of muscle degeneration in inherited muscular dystrophy by nuclear magnetic resonance techniques

Nuclear magnetic resonance (NMR) techniques were applied to study the muscular dystrophy in chicks. The water proton spin-lattice relaxation times (T₁) of fast, slow, and mixed muscles and plasma were measured. The T₁ values of dystrophic pectoralis major and posterior latissimus dorsi (PLD) were significantly higher than those of the normal pectoralis and PLD muscles. The present results establish a direct relationship between the differences in T₁ values and the severity of muscle degeneration. Consistent with this conclusion, it was also found that the T₁ values of muscles unaffected in muscular dystrophy, namely, the gastrocnemius, and anterior latissimus dorsi (ALD), were not different between the normal and dystrophic chicks. Although the affected muscles of dystrophic chicks contained higher percent water and fat than those of normal chicks, the results show that the higher T₁ values is dystrophic muscles were not solely due to variations in their water content. The increase in the T₁ values is principally a result of altered interaction between cellular water and macromolecules in the diseased muscles. These data also point out the potential use of NMR imaging in evaluating muscle degeneration.     

Nuclear acoustic resonance of V51 in a single crystal of V3Si above and below the martensitic transformation

The EFG and the Knight shift anisotropy of V⁵¹ in a single crystal of V³Si have been measured both above and below the martensitic transformation temperature T_m, using the nuclear acoustic resonance technique. Deviations of the axial symmetry of the EFG tensor have been found below T_m. The orientation of the tetragonal c axis in the crystal is also given.