Electronic structure of the CuBS2 crystal

The band structure and spectra of the total and projected densities of states of a new crystal of the chalcopyrite family, namely, CuBS₂, have been calculated in terms of the density functional theory. It has been found that the crystal is a pseudo-direct-band-gap semiconductor, and the best theoretical estimate of the optical band gap is 3.44 eV. The upper valence band of the CuBS₂ crystal basically consists of the contributions from the p states of S atoms and the d states of Cu atoms. The crystal splitting is 0.2 eV. The bottom of the conduction band is basically formed by the sp states of boron and sulfur atoms with an admixture of the s states of copper atoms.     

Energy Band Structure and Optical Properties of LiNaSO<Subscript>4</Subscript> Crystals

The energy band structure of a LiNaSO₄ has been calculated within the framework of density functional theory for space group P31c. It has been established that bandgap width E_g in the GGA approximation is 5.49 eV. The valence band top is generally formed of oxygen p-electrons, while the conduction band bottom is composed of lithium and sodium s-states. The effect of the cationic substitution Na → K → Rb → NH₄ on the electron structure of LiBSO₄ group crystals is considered. Based on the calculated dielectric functions, the spectral dependences of the refractive indices and extinction coefficient of a crystal were calculated and compared with experimental data.     

Electronic structure of SiO2(111) thin film

The electronic structure of (111) surface of β-crystobalite is investigat ed using the empirical tight binding method. Our calculations identify surface states in the conduction band, band gap and valence band. The surface state formed from silicon-s and p_z orbitals, which is believed to account for the structure in the O K excitation spectra, lies in the band gap. It is seen that oxygen adsorption on the surface removes surface states and gives rise to a sharp peak at about — 3.8 eV below the valence band edge.     

Crystal growth and the electronic structure of Tl3PbCl5

Total and partial densities of states of constituent atoms of two tetragonal phases of Tl₃PbCl₅ (space groups P4₁2₁2 and P4₁) have been calculated using the full potential linearized augmented plane wave (FP-LAPW) method and Korringa-Kohn-Rostoker method within coherent potential approximation (KKR-CPA). The results obtained reveal the similarity of occupations of the valence band and the conduction band in the both tetragonal phases of Tl₃PbCl₅. The FP-LAPW and KKR-CPA data indicate that the valence band of Tl₃PbCl₅ is dominated by contributions of the Cl 3p-like states, which contribute mainly to the top and the central portion of the valence band with also significant contributions throughout the whole valence-band region. Further, the bottom of the valence band of Tl₃PbCl₅ is composed mainly of the Tl 6s-like states, while the bottom of the conduction band is dominated by contributions of the empty Pb 6p-like states. The KKR-CPA results allow to assume that the width of the valence band increases somewhat while band gap, E_g, decreases when changing the crystal structure from P4₁2₁2 to P4₁. The X-ray photoelectron core-level and valence-band spectra for pristine and Ar⁺-ion-irradiated surfaces of a Tl₃PbCl₅ monocrystal grown by the Bridgman-Stockbarger method have been measured.     

Electronic structures of MRhO2, MRh2O4, RhMO4 and Rh2MO6 on the basis of X-ray spectroscopy and ESCA data

X-ray O Kα, Rh Mγ and a series of M Lα emission spectra, ESCA spectra of the valence and inner levels, and O K and Rh M_III quantum-yield spectra for X-ray photoemission of the rhodium double oxides MRhO₂ (M = Li, Na, K), MRh₂ O₄ (M = Be, Mg, Ca, Sr, Ba, Co, Ni, Cu, Zn, Cd, Pb), RhMO₄ (M = V, Nb, Ta) and Rh₂MO₆ (M = Mo, W) have been measured and the dependence of electronic structure on the metal M analysed. For all compounds the inner part of the valence band corresponds to O 2p_σ + O 2p_π + Rh 4d states, while the outer part corresponds to Rh 4d. The valence band is separated from the conduction band by a narrow gap of width less than 1 eV. The first empty band, near the bottom of the conduction band, is formed by Rh 4d states, followed by a band due to vacant O 2p states.     

Niveaux d'énergie et spectres de rayons X du rutile

The electronic levels of the complex TiO^?8₆ in the D_2h symmetry are determined according to an extended L. C. A. O. method. The results can explain the X-ray spectra of TiO₂. The absoption L_III and K rays are related to transitions from the 2p_3/2 and 1 s levels to the conduction band levels since the emission L_III and K components are explained by the transitions from the valence band levels to the 2p_3/2 and 1 s states. Interband transitions are related to the components of the optical reflexion spectrum of TiO₂ for the energies 0–20 eV. A comparaison is made with the electronic band structures of SnO₂, TiO₂ and BaTiO₃. At the center of the Brillouin zone, we obtain a forbidden gap of 3,01 eV, the corresponding widths of the valence and conduction band are 4,8 and 2,9 eV.     

Effects of annealing on localized states in amorphous Ge films

Annealing behaviors of the activation energy for the electrical conduction E_σ, that for the thermoelectric power E_s, the optical gap E^opt_g, and the spin density in evaporated amorphous Ge are investigated. E_σ is independent of E_s and E^opt_g, and the rates of variation of E^opt_g and E_s with annealing temperature are connected by △E^opt_g = 2.5△E^opt_s. It is suggested that the position of the Fermi level does not change with annealing in contrast with amorphous Si, and the edge of the localized tail state shifts with annealing.     

Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductors

Photoluminescence excitation (PLE) spectra of deep acceptor states in ZnSe, for example the Cu-related luminescence band at ≈1.95 eV, contain a prominent excitation band at ≈3.25 eV. This band lies above the structure marking the lowest direct E_O band gap E_g by the spin-orbit splitting energy Δ of the valence bands at Γ. The higher energy feature is either absent or greatly de-emphasised in the PLE spectra of shallow acceptor states in ZnSe and of the oxygen iso-electronic trap in ZnTe, where the electron rather than the hole is tightly bound. However, a significant PLE component at E_g + Δ is observed for deep acceptor-like states in ZnTe, where Δ is ≈0.95 eV. Efficient PLE at E + Δ for luminescence from deep acceptor-like states is shown to be consistent with the extended wave-vector contributions to the bound state wave-functions of holes of binding energies ≈Δ.     

Some comments on the electronic properties of the surface space charge layer of copper phthalocyanine thin films

A simple analysis, using a theory of the surface space charge layer of semiconductors, of the published values of the work function φ and surface ionization energy Φ_s of copper phthalocyanine (CuPc) thin films was performed. Using a well known position of the Fermi level E_F within the band gap E_g the values of its absolute band bending eV_s and surface electron affinity X_s were determined. A small negative value of the absolute band bending eV_s = −0.17 ∓ 0.15 eV has been interpreted by the existence of the filled electronic surface states localized in the band gap below the Fermi level E_F. Such states were predicted theoretically for thin films and the crystalline surface of CuPc, and attributed to surface lattice defects of a high concentration.     

Electronic band structure of In2S3 and CdIn2S4 semiconductor spinels from the data of x-ray spectroscopy and theoretical calculations

The electronic band structure of the chalcogenide spinels In₂S₃ and CdIn₂S₄ has been studied using the FEFF8 program. It is shown that the valence band top is formed by the S p states mixed with the In s and In p states for In₂S₃ or with the Cd s, Cd p, In s, and In p states for CdIn₂S₄. Compared to In₂S₃, the presence of Cd atoms in the nearest environment of S atoms in CdIn₂S₄ does not considerably affect the electronic band structure. In CdIn₂S₄ the Cd 4d states, as well as the In 4d states, form a narrow localized band shifted deep into the valence band. The theoretical results are in good agreement with the experimental x-ray photoelectron and x-ray spectra.     

Optical properties of amorphous CuInSe2

Optical absorption spectra of polycrystalline and amorphous CuInSe₂ thin films were measured at room temperature in the photon energy range from 0.8 to 2.1 eV. In amorphous CuInSe₂ the absorption coefficient follows the relation α(hv) = A(hv?E₀)/hv characteristic of optical transitions between extended states in both the valence and conduction band. The optical gap of E₀ = 1.38 ± 0.01 eV is larger than the fundamental gap energy of E_g = 1.01 ± 0.01 eV in crystalline CuInSe₂. A comparison of the results for CuInSe₂ with those for ZnSe is given.     

Optical characterization of gallium antimonide highly doped with manganese

Gallium antimonide crystals highly doped with Mn were prepared by a liquid-phase-electroepitaxy growth method. The crystals exhibited high hole concentrations up to 6×10¹⁸ cm⁻³. Photoluminescence (PL) and transmission techniques were used for their investigation. Spectral line-shapes typical for highly doped semiconductors were observed. The lines revealed the features corresponding to band gap narrowing and valence-band filling phenomena. Values of the band-gap narrowing ΔE_g and the degree of the valence-band filling ΔE_F were estimated from the PL spectra. The ionization energy of the Mn acceptor E_i was estimated to be approximately 15.1-15.6 meV. At low temperatures, the PL maxima shifted relatively strongly towards higher energy with temperature. The shifts most probably resulted from a dramatic change in the electron density of states near the bottom of the conduction band. The extent of low-energy tails of the PL bands correlates with the doping levels. The transmission spectra exhibited an absorption band centred at around 774-780 meV. The band most probably originated in electron transitions from the level of spin-orbit splitting to the top of the valence band.     

Giant nonlinear absorption in the NiO antiferromagnet

A study of the spectrum of nonlinear two-photon and two-step absorption in NiO single crystals, carried out in the energy region ?ω₁ + ?ω₂ = 2.45–4.575 eV, showed it to have a complex shape and consist of very strong peaks (from 0.05 to 2.7 cm/MW). Within the energy interval 2.45–3.3 eV, the spectrum is due to d-d transitions in the Ni²⁺ ion. The band gap width was determined to be E _g =3.466 eV. The spectral features seen above this energy originate from interband transitions from three valence subbands to the conduction band bottom.     

Disordering of the electronic structure of YBaCuO amorphous films upon incorporation of crystalline clusters formed in laser-induced plasma into their composition

The effect of crystalline clusters formed in a laser-induced plasma on the optical properties of YBa₂Cu₃O_{6 + x} amorphous films prepared by pulsed laser deposition has been investigated. It has been demonstrated that an increase in the number of clusters leads to a gradual disappearance of interference fringes inherent in optically homogeneous media. Simultaneously, the incorporation of metallic and insulating clusters into the amorphous medium results in a decrease in the optical band gap E ₀ of the YBaCuO amorphous matrix from 1.28 to 1.06 eV and a considerable decrease in the probability of interband optical transitions with charge transfer O 2p → Cu 3d due to the loosening of the structure and generation of local stresses. It has been revealed that there is an additional band gap E ₁, which decreases from 0.25–0.30 eV to zero values with a decrease in the optical band gap E ₀. The additional gap has been interpreted as an energy gap between localized states that belong to the valence and conduction bands. A decrease in the density of electronic states in the narrow 3d band leads to the overlap of tails of the density of states, so that the band gap E ₁ becomes negative.     

Gap states in hydrogenated amorphous silicon: A comparison of photoemission and photoconductivity results

We report photoemission results from which we directly determined the density of states g(E) in the gap of a-Si:H between the top of the valence band E_v and the Fermi level. At 0.4 eV above E_v, g(E) was found to be ≈1×10²⁰ cm^-3 eV^-1 in the undoped film; P-doping increased g(E) in this region whereas annealing reduced it. The photoconductivity-derived optical absorption spectrum matched the shape of the photoemission spectrum, and thus supports the explanation that the photoconductivity shoulder at photon energies in the region of 1.3 eV is due to transitions from localized states above the valence band to the conduction band.     

Effect of random doping on the electronic spectrum in trans-polyacetylene

Random dopants in trans (CH)_x introduce a broad band of gap states which merges with the conduction and valence band edges at a doping concentration n_c of a few percent. This overlap of band and gap states leads to an onset of Pauli susceptibility, since the density of states at the Fermi energy E_F is nonzero for n>n_c. However, E_F lies in a region of localized states until n is considerably greater than n_c and the system remains a semiconductor.     

PbWO4电子结构的密度泛函计算

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法模拟计算了PbWO₄晶体的本征能级结构.发现价带主要由O2p轨道组成,含有部分W5d轨道;导带主要由W5d和O2p的轨道组成.发现导带底由Pb6p_1/2的狭窄能级占有.禁带宽度和价带宽度分别约为4.8和4eV.计算结果很好地解释了实验得到的反射谱,并从理论上分析了PbWO₄晶体蓝光的发光模型. 关键词： 密度泛函 电子结构 4')" href="#">PbWO₄     

Band structure and optical properties of intrinsic tetragonal dioxides of groups-IV elements

Energy band structure calculations are carried out on three tetragonal dioxides belonging to the IV group (SnO₂, GeO₂, β-PbO₂) with the help of the KKR method. The results obtained are compared with many experimental results in order to try to make a synthesis of the optical properties of these compounds and to relate them to our theoretical results; In fact, the complexity of their unit cell and the difficulty to obtain the energy levels near the energy band gap by optical measurements seem to be responsible for the large discrepancies of results in literature concerning these compounds.Our results have confirmed the presence of the expected Γ⁺₁ and Γ⁺₄ states at the bottom of the conduction band; they have also given a valence band model that does not completely agree with any of the various models of energy levels lying in the vicinity of the energy gap.Moreover, our results seem to prove that no indirect transition exists neither in SnO₂, nor in β-PbO₂. At last, among several results that can be drawn from our calculations, one of the most significant is that the three compounds exhibit a strong dischroism, since the E⊥C transition has a weaker energy than the E∥C transition in SnO₂ and GeO₂, and conversely in β-PbO₂.     

Electronic structure of red amorphous phosphorus studied by X-ray spectroscopy

A SXS study of occupied and unoccupied 3p states of semiconducting red amorphous phosphorus is presented. It is shown that in the upper part of the valence band, partially hybridized sp spates are present among p pure states, whereas the bottom of the valence band is almost s-like. The results are discussed in connection with theoretical data available for black phosphorus.