Thermal diffusivities of hafnium and cobalt from 300 to 1000 K

The thermal difiusivities (α) of polycrystalline hafnium and cobalt have been measured, from room temperature to about 800 and 1000 K, using a laser flash method. Thermocouples (0.076 mm dia) monitor the back surface temperature as. a function of time after the front of the sample is exposed to a single laser pulse (pulse width τ <1 μs) from a pulsed flashlamp-pumped dye laser. Samples are in the form of small thin disks (< 5 mm dia, 0.6–0.7 mm thick). The thermal diffusivities decrease with increasing temperature. Values of α(cm²s⁻¹) as a function of temperature have been fit to equations of the form . Thermal diffusivities at 300 K, and the empirical constants for hafnium and cobalt, respectively, are: (α) 0.116, 0.260; (c₀) 0.0740, 0.0244; and (c₁) 12.55, 70.80. Comparison of thermal conductives, computed from the measured diffusitivities, with literature values for electrical conductivity yields Lorenz numbers which decrease with temperature for hafnium ( decreases from 1.13 to 0.97) but increase with temperature for cobalt ( increases from 0.89 to 1.11) although both sets of Lorenz numbers include the theoretical value L₀ for electronic conduction.     

Partial crystallization of silicon by high intensity laser irradiation

Commercial single crystal silicon wafers and amorphous silicon films piled on single crystal silicon wafers were irradiated with a femtosecond pulsed laser and a nanosecond pulsed laser at irradiation intensities between 10¹⁷ W/cm² and 10⁹ W/cm². In the single crystal silicon substrate, the irradiated area was changed to polycrystalline silicon and the piled silicon around the irradiated area has spindly column structures constructed of polycrystalline and amorphous silicon. In particular, in the case of the higher irradiation intensity of 10¹⁶ W/cm², the irradiated area was oriented to the same crystal direction as the substrate. In the case of the lower irradiation intensity of 10⁸ W/cm², only amorphous silicon was observed around the irradiated area, even when the target was single crystal silicon. In contrast, only amorphous silicon particles were found to be piled on the amorphous silicon film, irrespective of the intensity and pulse duration.Three-dimensional thermal diffusion equation for the piled particles on the substrate was solved by using the finite difference methods. The results of our heat-flow simulation of the piled particles almost agree with the experimental results.     

Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8

We studied the photoluminescence (PL) and Raman properties of the ordered defect compound CuGa₅Se₈. Twelve peaks were detected from the room-temperature Raman spectra with the A₁ mode around 160 cm⁻¹. Due to the stress in the polycrystalline thin film the corresponding frequencies of the Raman modes of a CuGa₅Se₈ single crystal were slightly shifted. One broad asymmetric PL band at 1.788 and 1.765 eV was observed at 10 K in the PL spectra of CuGa₅Se₈ single crystal and polycrystalline layer, respectively. The temperature and laser power dependencies of the PL spectra were also studied. The shape and properties of the PL band assure the presence of potential fluctuations and the analyses of the PL data suggest that the emission is due to band-to-tail (BT) or band-to-impurity (BI) recombination.     

Theoretical analysis and experimental research on thermal focal length of a YVO4/Nd:YVO4 composite crystal

This paper investigates the temperature field distribution and thermal focal length within a laser diode array (LDA) end-pumped YVO4/Nd:YVO4 rectangular composite crystal. A general expression of the temperature field distribution within the Nd:YVO4 rectangular crystal was obtained by analysing the characteristics of the Nd:YVO4 crystal and solving the Poisson equation with boundary conditions. The temperature field distributions in the Nd:YVO4 rectangular crystal for the YVO4/Nd:YVO4 composite crystal and the Nd:YVO4 single crystal are researched respec- tively. Calculating the thermal focal length within the Nd:YVO4 rectangular crystal was done by an analysis of the additional optical path differences (OPD) caused by heat, which was very identical with experimental results in this paper. Research results show that the maximum relative temperature on the rear face of the Nd:YVO4 crystal in the composite crystal is 150 K and the thermal focal length is 35.7 mm when the output power of the LDA is 22 W. In the same circumstances, the experimental value of the thermal focal length is 37.4 mm. So the relative error between the theoretical analysis and the experimental result is only 4.5%. With the same conditions, the thermal focal length of the Nd:YVO4 single crystal is 18.5 mm. So the relative rate of the thermal focal length between the YVO4/Nd:YVO4 crystal and the Nd:YVO4 crystal is 93%. So, the thermal stability of the output power and the beam quality of the YVO4/Nd:YVO4 laser is more advantageous than the laser with Nd:YVO4 single crystal.     

Surface structure changes by laser pulses in silicon

(100) and (111) silicon single crystals have been irradiated with laser pulses of several tens of MW/cm²; twinned structures are obtained on (111) planes with both samples. Depending on the laser power density, amorphous layers of Si, on (100) Si, show polycrystalline or single crystal surfaces.     

Laser-induced crystalline phase transition from rutile to anatase of niobium doped TiO2

The investigation of the laser-induced crystalline phase transition of niobium doped TiO₂ single crystal is discussed in this paper. The TiO₂ single crystal was studied by using Raman spectroscopy and electron backscatter diffraction before and after irradiation by 266?nm?ns laser at the threshold intensity of 56?MW/cm². Experimental results show an evidence of anatase phase formation from rutile single crystal. Moreover, the analysis of the experimentally obtained and calculated crystallographic texture indicates that the converted TiO₂ layer has a polycrystalline structure with the preferred orientations. According to the Raman spectroscopy the amount of anatase phase increases with the number of laser pulses indicating the dose-dependent conversion process.     

KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz(100)

Using the Sol-Gel method to produce the KTN ultrafine powder and the sintering technique with K2O atmosphere to prepare KTN ceramics as the targets instead of the KTN single crystal, highly oriented KTN thin films were produced on the transparent single crystal quartz (100) by the pulsed laser deposition (PLD). Since the thermal stress sustained by the quartz is relatively small, the limit temperature of the quartz substrates (300℃) is much lower than that of the P-Si substrates (560℃); the prepared thin film is at amorphous state. Increasing the pulsed laser energy density in the process incorporated with annealing the film after deposition at different temperatures converts the amorphous films into crystal. The optimal pulsed laser energy density and annealing temperature were 2.0 J/cm2 and 600℃, respectively. A discussion was made to understand the mechanism of film production at relatively low substrate temperature by PLD and effects of the annealing temperatures on the forming of the perovskite p     

Short-pulse UV laser ablation of solid and liquid metals: indium

2 to 2.5 mJ/cm² when a 0.5 ps pulse is used instead of a 15 ns laser pulse. Measurements on liquid indium show a different behavior. With 15 ns laser pulses the threshold fluence is lowered by a factor of ∼3 from 100 mJ/cm² for solid indium to 30 mJ/cm² for liquid indium. In contrast, measurements with 0.5 ps laser pulses do not show any change in the ablation threshold and are independent of the phase of the metal at 2.5 mJ/cm². This behavior could be explained by thermal diffusion and heat conduction during the laser pulse and demonstrates in an independent way the energy lost into the material when long laser pulses are applied. Time-of-flight measurements to investigate the underlying ablation mechanism show thermal behavior of the ablated indium atoms for both ps and ns ablation and can be fitted to Maxwell-Boltzmann distributions. Received: 2 December 1996/Accepted: 11 December 1996     

Laser induced single-crystal transition in polycrystalline silicon

Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 〈100〉 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 ? thick polycrystalline layer is about 70 MW/cm² (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm².     

Infrared emission spectroscopy of CO on Ni

We report the first observation of thermally emitted infrared radiation from vibrational modes of molecules adsorbed on clean, single crystal metal surfaces. The observation of emission from CO adsorbed on Ni demonstrates the surface sensitivity of a novel apparatus for infrared vibrational spectroscopy, with a resolution of 1 to 15 cm^?1 over the frequency range from 330 to 3000 cm^?1. A liquid helium cooled grating spectrometer measures the thermal radiation from a room temperature, single crystal sample, which is mounted in an ultrahigh vacuum system. Measurements of frequencies and linewidths of CO on a single crystal Ni sample, as a function of coverage, are discussed.     

Growth of high quality non-linear optical crystal zinc germanium phosphide for Mid-infrared optical parametric oscillator

ZnGeP₂ single crystals were grown from Vertical Bridgman method. High-quality near-stoichiometric ZnGeP₂ single crystals were obtained in the diameter of 30 mm and length of 120 mm. The results showed that after thermal annealing of the crystals the optical absorption coefficient was below 0.03 cm^?1 at 2.05 μm, and ～0.02 cm^?1 at 3–8 μm. The low absorption loss ZnGeP₂ samples with dimension of 6 × 6 × 18 mm³ were cut from the annealed ingots for 3–5 μm optical parametric oscillation (OPO) experiments. For OPO experiment, we obtained up to 8.7 W output in the 3–5 μm wavelength range (with signal of 3.80 μm and idler of 4.45 μm, respectively) pumped by a 16.3 W 2.05 μm Tm,Ho:GdVO₄ laser at pulse repetition rate of 10 kHz, which corresponded to a conversion efficiency of 53.4% and slope efficiency of 64.8%, respectively.     

Crystal growth of phosphor perovskite titanate thin films under excimer laser irradiation

Ca_0.997Pr_0.002TiO₃ (CPTO) thin films that show strong red luminescence were successfully prepared by means of an excimer laser assisted metal organic deposition (ELAMOD) process with a KrF laser at a fluence of 100 mJ/cm², a pulse duration of 26 ns, and a repetition rate of 20 Hz at 100°C in air. The CPTO films grew on the silica, borosilicate, and indium-tin-oxide (ITO) glasses. The crystallinity of the CPTO films depended on the substrates; the films were well grown on the borosilicate and ITO glasses compared to the silica glass. To elucidate the key factors for the crystallization of the CPTO films in this process, we carried out numerical simulations for the temperature variation at the laser irradiation, using a heat diffusion equation, and compared the experimental data with thermal simulations. According to the results, we have shown that a large optical absorbance of the film and a small thermal conductivity of the substrate provide effective annealing time and temperature for the crystallization of the CPTO films, and polycrystalline intermediate layer which has a large optical absorption such as the ITO also plays a key role for the nucleation of the CPTO crystals in the ELAMOD process.     

Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealing

The crystallization of silicon rich hydrogenated amorphous silicon carbon films prepared by Plasma Enhanced Chemical Vapor Deposition technique has been induced by excimer laser annealing as well as thermal annealing. The excimer laser energy density (E_d) and the annealing temperature were varied from 123 to 242 mJ/cm² and from 250 to 1200 °C respectively. The effects of the two crystallization processes on the structural properties and bonding configurations of the films have been studied. The main results are that for the laser annealed samples, cubic SiC crystallites are formed for E_d ≥ 188 mJ/cm², while for the thermal annealed samples, micro-crystallites SiC and polycrystalline hexagonal SiC are observed for the annealing temperature of 800 and 1200 °C respectively. The crystallinity degree has been found to improve with the increase in the laser energy density as well as with the increase in the annealing temperature.     

Photothermal measurements in determination of the thermal diffusivity of SiC

In this work a measuring method for determination of the thermal diffusivity of SiC substrates commonly used in electronic industry is proposed. Such substrates are (300 900) μm thick plates, The method bases on generation of temperature field disturbance in the sample by modulated light beam. Fitting of theoretical curves to the ratio of signals measured in two experimental geometries as a function of modulation frequency allows determination of the thermal diffusivity and optical absorption of the sample. Optical absorption is also measured independently using typical spectrometer. Results obtained for a few SiC substrates confirm usability of proposed method for investigation of such samples. Determined thermal diffusivities of polycrystalline samples are of the order of (0.2 0.5) cm² s ^{- 1}. The thermal diffusivities of single crystals are considerably higher and reach (1.3 1.5) cm² s^-1.     

Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure RF glow discharges

Abstract

Using secondary ion mass spectrometry (SIMS) the penetration of deuterium into Si(100) substrates as a result of exposure to deuterium low pressure rf discharges has been determined as a function of exposure time, thermal contact of the Si wafers to the substrate electrode, substrate doping, and discharge pressure. For undoped (100) single crystal Si exposed without intentional heating to a 25 m torr D₂ plasma for 1 min the deuterium concentration in the near-surface region (0—30 nm) approaches 10²¹ at.cm^?3. It drops off with depth, but is still greater than 10¹⁷ at.cm.^?3 at a silicon depth of 200 nm. The large penetration depth, the observation that lowering the substrate temperature decreases the rate of deuterium uptake, and the dependence of deuterium penetration on the substrate doping type indicate that hydrogen diffusion is of primary importance. The presence of a 50 nm thick oxide layer on the Si substrate during plasma exposure lowers the deuterium near-surface concentration in the Si substrate by about three orders of magnitude, while the presence of 10 nm of thermal oxide reduces the deuterium uptake only insignificantly. Heavily B and As doped polycrystalline Si show less deuterium penetration, while undoped polycrystalline Si shows more deuterium uptake than undoped single crystal Si for the same plasma treatment.     

Examining surfaces of oxidized aluminum exposed to СО<Subscript>2</Subscript> laser pulses

Comprehensive microstructure studies of the surfaces of duralumin sheets exposed to an intense microsecond СО₂ laser pulse (Е ~ 500 J) are performed for the first time. The irradiated area is ~100 cm². A pulse with a duration of ~5 μs has an ~200 ns leading peak. Passivated duralumin sheets subjected to pressure and thermal treatment resulting in the formation of Al₂O₃ layers ~7 μm thick are irradiated. Electron and atomic force microscopy, X-ray spectral analysis, and optical profilometry are used in the study. Detected traces of nonequilibrium evaporation contained a polycrystalline aggregate of several stoichiometric and nonstoichiometric phases of aluminum oxide and its compounds with manganese and magnesium.     

Mößbauereffekt in FeCl2, FeSO4 und FeSO4 · 7 H2O

Mößbauereffect measurements were performed with FeCl₂, FeSO₄ and FeSO₄ · 7 H₂O in the temperature range between 5 and 300 ?K. The quadrupole splittings at 5 ?K were determined to be (1.300±0.027) mm/sec, (3.650±0.053) mm/sec, and (3.350±0.053) mm/sec respectively. From the temperature dependence of the quadrupole splittings it follows that in FeCl₂ the energy of the excited 3d-electron-level isδ=150 cm^?1, in FeSO₄ δ ₁=360 cm^?1 andδ ₂=1680 cm^?1 and in FeSO₄ · 7 H₂Oδ ₁=480 cm^?1 andδ ₂=1300 cm^?1. The magnitudes of the magnetic field at the iron nucleus at 5 ?K are (202±8) kOe for FeSO₄ and (0±4) kOe for FeCl₂.     

Measurement of fast desorption kinetics of D2, from tungsten by laser induced thermal desorption

A laser heating technique for studying fast surface processes has been applied in an initial study to the thermal desorption of D₂ from a polycrystalline tungsten sample. This technique is a means for measuring surface reactions at rates, concentrations, and temperatures that approach conditions of technical interest, but with the high degree of definition and control made possible with an ultrahigh vacuum apparatus. The method is analogous to the fast temperature jump method used for studying reactions in condensed phases, and can sort out elementary processes that have differing activation energies. The variation of total flux desorbed with maximum surface temperature reached and initial surface coverage serves, with the aid of a model kinetic rate expression, to determine the desorption rate parameters. It is shown that the desorption of D₂ from W at rates of 5 × 10⁷ monolayers/sec is governed by the same kinetics as obtained by extrapolating previous measurements made at a rate about 10⁵ times slower. The surface is subjected to a sufficiently fast and large temperature rise to desorb surface atoms or molecules in a time short compared to the range of flight times to a mass spectrometer detector. In this way the velocity distribution of the desorbing species may be determined. This along with the surface temperature history gives additional information on the reaction rate model and also whether the species are emerging in translational thermal equilibrium with the surface. In the present experiments a significant number of desorbatedesorbate collisions occur. Corrections are made for the collision effects in the interpretation of the data. It is shown how modifications of the technique can be made to substantially eliminate these effects. The present conditions were laser pulse width of 3 × 10^?8 sec and surface temperature rise of 300 to 3000 K.     

Quasi-elastic scattering due to fast oxygen diffuson in yttria stabilized zirconia

Evidence for fast oxygen diffusion at high temperatures in single crystal ZrO₂ containing 12 mol % Y₂O₃ is presented from quasi-elastic light scattering data. Lattice vacancies are responsible for the enhanced ionic diffusion and the structural disorder. In the temperature range investigated we estimate the barrier activation energy for the jumping of oxygen vacancies to be 0.25 eV. At 1500°K the jump time is ～ 4 × 10^?12 sec., the diffusion constant is ～ 3.26 × 10^?5 cm²/sec. and the conductivity is ～ 0.24 (Ωcm)^?1.     

Performance characteristics of a TEM00 mode TEA CO2 oscillator-amplifier system

The performances of a TEA CO₂ oscillator-amplifier system consisting of a helical laser and a one-meter Lamberton-Pearson-type double-discharge laser are reported. Time and spatial profiles for the input and output of the amplifier have been studied. A small-signal gain coefficient of 0.031 cm^-1 and a saturation energy of 0.35 J/cm² are measured for a pulse of 100 nsec duration with a low-power tail of 1 μsec.